• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.86-92
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• 2022

Despite otherwise advantageous properties, the performance and reliability of devices manufactured in β-Ga₂O₃ on semi-insulating Ga₂O₃ substrates may degrade because of poorly mitigated self-heating, which results from the low thermal conductivity of Ga₂O₃ substrates. In this work, we investigate and compare self-heating and device performance of β-Ga₂O₃ MESFETs on substrates of semi-insulating Ga₂O₃ and 4H-SiC. Electron mobility in β-Ga₂O₃ is negatively affected by increasing lattice temperature, which consequently also negatively influences device conductance. The superior thermal conductivity of 4H-SiC substrates resulted in reduced β-Ga₂O₃ lattice temperatures and, thus, mitigates MESFET drain current degradation. This, in turn, allows practically reduced device dimensions without deteriorating the performance and improved device reliability.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.4
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• pp.740-746
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• 2009

Two step serial load induction superheater has been proposed using resonance type induction heat method in this paper. Heat method is a type of flowing the electron induction and current to special alloy heater in body from external heat coil with non-contact method. Inverter was a full bridge serial load resonance type and inductor was used as load in LC resonance design to maximize the efficiency. The developed system is a new heat exchanging method combined with electromagnetic induction heater and fluid movement, ana very accurate to control of heating the gas, liquid and evaporated mass, so on without combustion process.

• Korean Journal of Materials Research
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• v.25 no.5
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• pp.258-263
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• 2015

To fabricate porous SiC-Si composites for heating element applications, both SiC powders and Si powders were mixed and sintered together. The properties of the sintered SiC-Si body were investigated as a function of SiC particle size and/or Si particle contents from 10 wt% to 40 wt%, respectively. Porous SiC-Si composites were fabricated by Si bonded reaction at a sintering temperature of $1650^{\circ}C$ for 80 min. The microstructure and phase analysis of SiC-Si composites that depend on Si particle contents were characterized using scanning electron microscope and X-ray diffraction. The electrical resistivity of SiC-Si composites was also evaluated using a 4-point probe resistivity method. The electrical resistivity of the sintered SiC-Si body sharply decreased as the amount of Si addition increased. We found that the electrical resistivity of porous SiC-Si composites is closely related to the amount of Si added and at least 20 wt% Si are needed in order to apply the SiCSi composites to the heating element.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.707-711
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• 2016

A small diameter of SiC fiber mat can produce much higher heat under microwave irradiation than the other types of SiC materials. Fabrication of high strength SiC fiber consists of iodine vapor curing on polycarbosilane precursor and heat treatment process. The curing stage of polycarbosilane fiber was maintained at $150-200^{\circ}C$ in a vacuum condition under the iodine vapor to fabricate a high thermal radiation SiC fiber. The structure and morphology of the fibers were characterized by Fourier transform infrared (FTIR) spectroscopy, thermogravimetric analysis (TG) and scanning electron microscopy (SEM). In this study, the thermal properties of SiC fiber mats under microwave have been analyzed with an IR thermal camera and its image analyzer. The prepared SiC fiber mats radiated high temperature with extremely high heating rate up to $1100^{\circ}C$ in 30 seconds. The fabricated SiC fiber mats were not oxidized after the heat radiation process under the microwave irradiation.

• Journal of Sensor Science and Technology
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• v.25 no.1
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• pp.8-12
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• 2016

A planar, light-weight, and low-cost notch filter structure is required for the KSTAR ECEI (Electron Cyclotron Emission Imaging) system to protect the mixer arrays from spurious plasma heating power. Without protection, this heating power can significantly degrade or damage the performance of the mixer array. To protect mixer arrays, a frequency selective surface (FSS) structure is the suitable choice as a notch filter to reject the spurious heating power. The FSS notch filter should be located between the lenses of the ECEI system. This paper presents a 170 GHz FSS notch filter for the KSTAR ECEI sensor application. The design of such an FSS notch filter is based on the single-sided square loop geometry, because that makes it relatively insensitive to the incident angle of incoming wave. The FSS notch filter exhibits high notch rejection with low pass-band insertion loss over a wide range of incident angles. This paper also reviews the simulated and measured results. The proposed FSS notch filter might be implemented in other millimeter-wave plasma devices.

• Journal of the Korean Graphic Arts Communication Society
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• v.22 no.2
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• pp.111-122
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• 2004

The purpose of this study was to investigate the possibility of application of microwave energy for the fabrication of polymer/clay nanocomposite. APES/Clay nanocomposites were prepared at $130^{\circ}C$ for 30min with various amount of MMT or OMMT used the melt-intercalation method applied the classical and microwave heating source. APES/Clay samples were characterized by the means of X-ray diffractometry (XRD), transmitted electron microscopy (TEM) differential scanning calorimetry (DSC), and rheometric dynamic analysis (RDA). It was found that intercalated or exfoliated state of the samples could be controlled by the clay type, clay content, and heating type.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.109-112
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• 2008

The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according transmission electron microscopy. JIC poly-Si exhibits an excellent uniformity with regards to the grain size. We report here the blanket crystallization of the large area using the $2^{nd}$ generation glass substrate.

• Journal of the Korean Society of Food Science and Nutrition
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• v.30 no.1
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• pp.138-142
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• 2001

Solid contents, free sugars, phenlic compounds and glycyrrhizin of extracts obtained from by-products of Glycyrrhizia uralensis by three different methods, i.e., shaking, heating, and static methods, were determined. Solid contents of extracts obtained by shaking, heating and static method were 15.6%, 15.0% and 5.3%, respectively. Phenolic compound contents of them were 11.33 mg/100 mL, 11.21 mg/100mL and 10.15 mg/100 mL. Main free sugars in the extracts from the by-products of G. uralensis were fructose, glucose, sucrose, and maltose. Glycyrrhizin content of the extracts from the by-products of G. uralensis were 2.79%, 3.54% and 0.63%, respectively. Extract obtained by the shaking methods had an ability of donating electron to DPPH. The relative antioxidant effects of th extract obtained from the shaking method showed 70% inhibitory effect of peroxidation on egg yolk lecithin.

• Journal of Astronomy and Space Sciences
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• v.4 no.2
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• pp.81-88
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• 1987

There are more oxygen ions than hydrogen ions in the auroral field zone. We consider both analytic and numerical simulation study of the heating of hydrogen and oxygen ions by auroral electrons. With the low drift speed of electron beams, the ion-ion hybrid wave becomes unstable instead of the lower hydrid wave so that a preferential heating of oxygen ions occurs.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.9
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• pp.1386-1392
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• 1990

Characteristics of the direct thermal nitrided films by RF induction heating has been studied. The nitrided films on Si were prepared at 1000-1200\ulcorner in ammonia gas ambient. The nitrided films were analyzed by ellipsometry an Auger electron spectroscopy. I-V and C-V characteristics of MIS capacitors fabricated using nitrided film were investicated. The nitrided films were grown up mostly within initial thirty minutes and no significant growth was observed thereafter. Etch rates of films were about 1\ulcornermin in diluted HF (HF:H2O= 1:50). The nitrided films were resistant to dry and wet oxidations at temperatures below 1000\ulcorner and 900\ulcorner, respectively.