• 한국표면공학회지
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• 제43권4호
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• pp.170-175
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• 2010

The GaAs epitaxial layers were grown on Si(100) substrates by molecular beam epitaxy(MBE) using the two-step method. The Si(100) substrates were cleaned with different surface cleaning method of vacuum heating, As-beam, and Ga-beam at the substrate temperature of $800^{\circ}C$. Growth temperature and thickness of the GaAs epitaxial layer were $800^{\circ}C$ and 1 ${\mu}m$, respectively. The surface structure and epitaxial growth were observed by reflection high-energy electron diffraction(RHEED) and scanning electron microscope(SEM). Just surface structure of the Si(100) substrate cleaned by Ga-beam at $800^{\circ}C$ shows double domain ($2{\times}1$). RHEED patterns of the GaAs epitaxial layers grown on Si(100) substrates with cleaning method of vacuum heating, As-beam, and Ga-beam show spot-like, ($2{\times}4$) with spot, and clear ($2{\times}4$). From SEM, it is found that the GaAs epitaxial layers grown on Si(100) substrates with Ga-beam cleaning has a high quality.

• 한국초전도ㆍ저온공학회논문지
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• 제14권1호
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• pp.1-3
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• 2012

LMO($LaMnO_3$) buffer layer of superconducting coated conductor was deposited on IBAD-MgO template in the plasma atmosphere at $650^{\circ}C$ which is relatively low compared with conventional deposition temperature of more than $800^{\circ}C$. Deposition method of LMO was DC sputtering, and target and deposition chamber were connected to the cathode and anode respectively. When DC voltage was applied between target and chamber, plasma was formed on the surface of target. The tape substrate was located with the distance of 10 cm between target and tape substrate. When anode bias was connected to the tape substrate, electrons were attracted from plasma in target surface to the tape substrate, and only tape substrate was heated by electron bombardment without heating any other zone. The effect of electron bombardment on the surface of substrate was investigated by increasing bias voltage to the substrate. We found out that the sample of electron bombardment had the effect of surface heating and had good texturing at low controlling temperature.

• 한국식품조리과학회지
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• 제10권2호
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• pp.138-141
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• 1994

Whole, peeled sweetpotatoes were subjected to four different processes: 15 min microwave heating followed by 15 min baking (1), 90 min baking (2), 15 min microwave heating (3), and 15 min boiling followed by 15 min microwave heating (4). Samples of green and cured roots were used in the study. Scanning electron photomicrographs revealed that cured roots contained larger numbers of starch granules in the parenchyma cells than green roots, most of them compounded. The starch in cooked green roots was gelatinized while for cured roots it was mostly hydrolyzed into dextrins and sugars. Starch in process (3) roots was mostly gelatinized while in process (1) and process (2) roots gelatinized starch appeared in little quantity, thus it was primarily converted to dextrins and sugars. The process (4) resulted in little conversion of starch. The process (1) product resulted in a similar product to the process (2) product.

• 한국전기전자재료학회논문지
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• 제11권8호
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• pp.587-595
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• 1998

Transient thermal analysis simulations are carried out using a modeling program to understand the human body model HBM ESD. The devices were simulated a one-dimensional device subjected to ESD stress by solving Poison's equation, the continuity equation, and heat flow equation. A ramp rise with peak ESD voltage during rise time is applied to the device under test and then discharged exponentially through the device. LDD and NMOS structures were studied to evaluate ESD performance, snap back voltages, device heating. Junction heating results in the necessity for increased electron concentration in the space charge region to carry the current by the ESD HBM circuit. The doping profile adihacent to junction determines the amount of charge density and magnitude of the electric field, potential drop, and device heating. Shallow slopes of LDD tend to collect the negative charge and higher potential drops and device heating.

• 마이크로전자및패키징학회지
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• 제25권4호
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• pp.101-104
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• 2018

An electric field was applied to a Mo conductive layer in the sandwiched structure of $glass/SiO_2/Mo/SiO_2/a-Si$ to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according to transmission electron microscopy. We report here the blanket crystallization of amorphous silicon films using the $2^{nd}$ generation glass substrate.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2008년 영문 학술대회
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• pp.525-530
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• 2008

We present a model for simulating high energy laser heating and ignition of confined energetic materials. The model considers effect of ablation of steel plate with long laser pulses and continuous lasers of several kilowatts and the thermal response of well-characterized high explosives for ignition. Since there is enough time for the thermal wave to propagate into the target and to create a region of hot spot in the high explosives, electron thermal diffusion of ultra-short(femto- and pico-second) lasing is ignored; instead, heat diffusion of absorbed laser energy in the solid target is modeled with thermal decomposition kinetic models of high explosives are used. Numerically simulated pulsed-laser heating of solid target and thermal explosion of cyclotrimethylenetrinitramine(RDX), triaminotrinitrobenzene(TATB), and octahydrotetranitrotetrazine(HMX) are compared to experimental results. The experimental and numerical results are in good agreement.

• Current Research on Agriculture and Life Sciences
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• 제28권
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• pp.53-62
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• 2010

원적외선 조사가 포도씨 기능성분의 변화에 미치는 영향을 알아보고자 가열출력(0, 900, 1800 W) 및 가열시간(0, 20, 40 min)을 달리하여 원적외선 조사 후 마이크로파를 이용하여 포도씨 추출물을 제조하고 기능성분으로서 가용성 고형분, 기계적 색도, 카테킨, 총 페놀, 총 플라보노이드 함량 및 전자공여능과 아질산염 소거능을 각각 측정하였다. 가용성 고형분 함량 및 백색도 및 적색도는 유의적인 차이가 없는 것으로 나타났다. Cathechin류는 가열시간에 따라 catechin, procyanidin $B_2$, epicatechin 함량의 변화가 있음을 확인하였으며, 총 catechin 함량은 총 카테킨 함량은 900 W 및 20분 처리 시 가장 높게 나타났다. 총 페놀성화합물 및 플라보노이드 함량 또한 가열출력 900W 및 가열시간 20분 일 때 가장 높게 나타났다. 그에 따라 전자공여능도 가열출력 900 W 및 가열시간 20분 일 때 가장 높은 것으로 나타났다. 이상의 결과는 원적외선 처리에 의해 총 페놀성 화합물 함량, 총 플라보노이드 함량이 증가됨을 볼 수 있었으며, 특히 cathechin류의 변화가 있음을 확인할 수 있었다. 또한 이로 인해 항산화능도 증가됨을 알 수 있었다. 또한 포도씨의 원적외선 가열처리 최적조건을 설정하고자 가열출력 및 가열시간을 달리하여 중심합성실험계획으로 반응표면분석한 결과 가열출력 621.82~818.18 W, 가열시간 16.3~19.83 min의 범위가 최적 가열조건범위로 설정되었다.

• 전기학회논문지
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• 제63권10호
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• pp.1485-1490
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• 2014

$SF_6$ gas has been used for power transformers or gas insulated switchgears, because it has the superior insulation property and the stable structure chemically. It has been, however, one of global warming gases and required to reduce the its amount. Some papers have reported that its amount could be reduced by mixing with other gases, such as $N_2$, $CF_4$, $CO_2$ and $C_4F_8$ and their mixture gases would cause the synergy effect. In this paper, we investigated the characteristics of DC plasmas on $SF_6$ mixture gases with $N_2$ at atmospheric pressure. $N_2$ gas is one of cheap gases and has been reported to show the synergy effect with mixing $SF_6$ gas, even though $N_2$ plasmas have electron-positive characteristics. 38 kinds of $SF_6/N_2$ plasma particles, which consisted of an electron, two positive ions, five negative ions, 30 excitation and vibration particles, were considered in a one dimensional fluid simulation model with capacitively coupled plasma chamber. The results showed that the joule heating of $SF_6/N_2$ plasmas was mainly caused by positive ions, on the other hand electrons acted on holding the $SF_6/N_2$ plasmas stably. The joule heating was strongly generated near the electrodes, which caused the increase of neutral gas temperature within the chamber. The more $N_2$ mixed-ratio increased, the less joule heating was. And the power consumptions by electron and positive ions increased with the increase of $N_2$ mixed-ratio.

• 한국세라믹학회지
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• 제27권1호
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• pp.136-146
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• 1990

Whiskers of SiC were grown from the mixture of silica and graphite powders by Acheson method(direct heating method). The structrua, morphological and chemical characterizations have been performed by X-ray diffractometer(XRD), transmission electron microscopy(TEM), optical microscopy(OM), scanning electron microscopy(SEM), X-ray photoelectron spectroscopy(XPS) and energy dispersive spectrometer(EDS). The growth mechanism of SiC whiskers is also discussed.

• Applied Microscopy
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• 제36권spc1호
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• pp.19-24
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• 2006

The alumina-aluminum solid-liquid interfaces were directly observed at atomic scale by heating the alumina single crystal in high-voltage electron microscope (HVEM) owing to the electron beam damage processes, Atomic ordering in the first several layers of the liquid was clearly resolved adjacent to the alumina surface and its relevance to the single crystal growth was examined with the real-time observations.