• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.236.1-236.1
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• 2014

Compounds of Ga, such as gallium oxide (Ga2O3) and gallium nitride (GaN), are of interest due to its unique properties in semiconductor application. In particular, GaN has the potentially application for optoelectronic device such as light-emitting diodes (LEDs) and laser diodes (LDs) [1]. Nanoparticle is an interesting material due to its unique properties compared to the bulk equivalents. In this report, we develop a synthesizing method for gallium nitride nanoparticle using non-thermal plasma. For gallium source, the gallium is heated by thermal conduction of tungsten boat which is heated by eddy current induced from RF current in antenna. Nitrogen source for nanoparticle synthesis are from inductively coupled plasma with N2 gas. The synthesized nano particles are analyzed using field-emission scanning microscope (FESEM), transmission electron microscope (TEM) and x-ray photoelectron spectroscopy (XPS). The synthesized particles are investigated and discussed in wide range of experiment conditions such as flow rate, pressure and RF power.

• Journal of Surface Science and Engineering
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• v.24 no.1
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• pp.24-24
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• 1991

Cr-N films were deposited on low-carbon steel sheets by the reactive arc-induced ion plating (AIIP). The influence of the deposition conditions (nitrogen pressure and substrate bias voltage) on the crystal orientation, morphology and microhardness of the Cr-N films has been investigated using x-ray diffractometer and scanning electron microscope. The impurities and contaminations on the surface and at the interface, and the layer-by-layer compositions of the film have been analyzed using scanning Auger multiprobe (SAM) and glow discharge spectroscope (GDS). The mixed state of Cr and Cr2N turned out to have a fine fibrous structure. The Cr2N films were deposited at a wide range of nitrogen flow rates. The orientations of Cr2N films were mainly (110) and (111), and the intensity of the (111) peak increased as the substrate bias voltage increased. The micorstructure of the Cr2N film was dense and no columnar structure was observed. The films in the mixed state of Cr2N and CrN were also dense without columnar structure. The maximum microhardness of the Cr-N films was 2400 kg/$\textrm{mm}^2$ at 10gf load.

• Laser Solutions
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• v.9 no.3
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• pp.15-21
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• 2006

A Polypropylene (PP) film was ablated using a femtosecond laser with a center wavelength of 785 nm, a pulse width of 184 fs and a repetition rate of 1 kHz. Increments of both pulse energy and the shot number of pulses lead to co-occurrence of photochemical and thermal effect, demonstrated by the spatial expansion of rim on the surface of PP. The shapes of the laser-ablated PP films were imaged by a scanning electron microscope (SEM) and measured a 3D optical measurement system (NanoFocus). And, the oxygen transmission rate (ORT) of periodically laser-ablated PP film were characterized by oxygen permeability tester for modified atmosphere packaging (MAP) of fresh fruit and vegetable. Our results demonstrate that femtosecond pulsed laser is efficient tools for breathable packaging films in modifying the flow of air and gas into and out of a fresh produce container, where the micropatterns are specifically tailored in size, location and number which are easily controlled by laser pulse energy and pulse patterning system.

• Journal of Welding and Joining
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• v.2 no.1
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• pp.49-57
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• 1984

The influence of weld defect, residual stress and microstructure on the Low Cycle Fatigue(L. C. F.) behaviour of AISI 304L austenitic stainless steel weldment has been studied. The specimens were welded by shielded metal are welding process, post weld heat treated(PWHT) at 900.deg.C for 1.5hrs, and tested under total strain controlled condition at room temperature. The results of the experiment showed that weld defect affected the L.C.F. behaviour of weldment deleteriously compared to the residual stress or microstructure, and it reduced the L.C.F. life about 70-80%. The PWHT exhibited beneficial effect on the L.C.F. behaviour and increased the L.C.F. life about 120%. This enhancement by PWHT was attributed to the removal of residual stress and recovery of weld metal ductility. The cyclic stress flow of as welded specimens showed intermediate cyclic softening, whereas those of heat treated specimens showed continuous cyclic hardening, and this difference was explained in terms of the residual stress removal and dislocation behaviour. Scanning electron microscopy studies of fatigue fracture surface showed that weld defects of large size and near weld surface were detrimental to the L.C.F. behaviour of weldment.

• Korean Journal of Veterinary Research
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• v.58 no.1
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• pp.27-31
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• 2018

Canine coronavirus is a single-stranded RNA virus that causes enteritis in dogs of any age. Coronaviral enteritis is seldom definitively diagnosed, since it is usually much less severe than many other types of enteritis and is self-limiting. Conventional diagnostics for the canine coronaviral enteritis such as polymerase chain reaction (PCR), virus isolation, and electron microscopic examination are inappropriate for small animal clinics due to the complicated experimental processes involved. Therefore, a commercially available lateral flow test kit based on chromatographic immunoassay techniques was tested to evaluate its performance as a first-line diagnostic test kit that could be used in clinics. The coronavirus antigen test kit detected canine coronavirus-infected dogs with 93.1% sensitivity and 97.5% specificity. The detection limit of the test kit was between $1.97{\times}10^4/mL$ and $9.85{\times}10^3/mL$ for samples with a 2-fold serial dilution from $1.25{\times}10^6\;TCID_{50}$ ($TCID_{50}$, 50% tissue culture infectious dose). Additionally, the test kit had no cross-reactivity with canine parvovirus, distemper virus, or Escherichia coli. Overall, the commercially available test kit showed good diagnostic performance in a clinical setting, with results similar to those from PCR, confirming their potential for convenient and accurate use in small animal clinics.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.351-351
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• 2011

Graphene has drawn great interests because of its distinctive band structure and physical properties[1]. A few of the practical applications envisioned for graphene include semiconductor applications, optoelectronics (sola cell, touch screens, liquid crystal displays), and graphene based batteries/super-capacitors [2-3]. Recent work has shown that excellent electronic properties are exhibited by large-scale ultrathin graphite films, grown by chemical vapor deposition on a polycrystalline metal and transferred to a device-compatible surface[4]. In this paper, we focussed our scope for the understanding the graphene growth at different conditions, which enables to control the growth towards the application aimed. The graphene was grown using chemical vapor deposition (CVD) with methane and hydrogen gas in vacuum furnace system. The grown graphene was characterized using a scanning electron microscope(SEM) and Raman spectroscopy. We changed the growth temperature from 900 to $1050^{\circ}C$ with various gas flow rate and composition rate. The growth condition for larger domain will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.284-284
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• 2011

Recently, the increasing degree of device integration in the fabrication of Si semiconductor devices, etching processes of nano-scale materials and high aspect-ratio (HAR) structures become more important. Due to this reason, etch selectivity control during etching of HAR contact holes and trenches is very important. In this study, The etch selectivity and etch rate of TEOS oxide layer using ACL (amorphous carbon layer) mask are investigated various process parameters in CH2F2/C4F8/O2/Ar plasma during etching TEOS oxide layer using ArF/BARC/SiOx/ACL multilevel resist (MLR) structures. The deformation and etch characteristics of TEOS oxide layer using ACL hard mask was investigated in a dual-frequency superimposed capacitively coupled plasma (DFS-CCP) etcher by different fHF/ fLF combinations by varying the CH2F2/ C4F8 gas flow ratio plasmas. The etch characteristics were measured by on scanning electron microscopy (SEM) And X-ray photoelectron spectroscopy (XPS) analyses and Fourier transform infrared spectroscopy (FT-IR). A process window for very high selective etching of TEOS oxide using ACL mask could be determined by controlling the process parameters and in turn degree of polymerization. Mechanisms for high etch selectivity will discussed in detail.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.309-309
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• 2012

Heteroepitaxial growth remains as one of the continuously growing interests, because the heterogeneous crystallization on different substrates is a common feature in the fabrication processes of many semiconductor materials and devices, such as molecular beam epitaxy, pulsed laser deposition, sputtering, chemical bath deposition, chemical vapor deposition, hydrothermal synthesis, vapor phase transport and so on [1,2]. By using the R.F. sputtering system, ZnO thin films were deposited on graphene 4 and 6 mono layers, which is grown on 400 nm and 600 nm $SiO_2$ substrates, respectively. The ZnO thin layer was deposited at various temperatures by using a ZnO target. In this experimental, the working power and pressure were $3{\times}10^{-3}$ Torr and 50 W, respectively. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen and argon gas flows were controlled around 5 and 10 sccm by using a mass flow controller system, respectively. The structural properties of the samples were analyzed by XRD measurement. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system. The surface morphologies were observed using field emission scanning electron microscope (FE-SEM).

• Journal of Surface Science and Engineering
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• v.25 no.1
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• pp.24-33
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• 1992

Cr-N films were deposited on low-carbon steel sheets by the reactive arc-induced ion plating (AIIP). The influence of the deposition conditions (nitrogen pressure and substrate bias voltage) on the crystal orientation, morphology and microhardness of the Cr-N films has been investigated using x-ray diffractometer and scanning electron microscope. The impurities and contaminations on the surface and at the interface, and the layer-by-layer compositions of the film have been analyzed using scanning Auger multiprobe (SAM) and glow discharge spectroscope (GDS). The mixed state of Cr and Cr₂N turned out to have a fine fibrous structure. The Cr₂N films were deposited at a wide range of nitrogen flow rates. The orientations of Cr₂N films were mainly (110) and (111), and the intensity of the (111) peak increased as the substrate bias voltage increased. The microstructure of the Cr₂N film was dense and no columnar structure was observed. The films in the mixed state of Cr₂N and CrN were also dense without columnar structure. The maximum microhardness of the Cr-N films was 2400 kg/㎟ at 10 gf load.

• Journal of Korea Foundry Society
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• v.15 no.3
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• pp.283-290
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• 1995

Molybdenum ingot of 50mm in diameter were obtained from sintered Mo bars by EB drip melting technique. Macroscopic observation of EB remelted ingot indicates that coarse and columnar grains grow in the direction parallel to ingot pulling direction. This can be explained by slow solidification (3mm/min), large temperature gradient and heat flow to this direction. The orientation of columnar structure was found to be <110>, <200> and <211> by the analysis of X-ray diffraction patterns. The contents of typical metallic impurities in Mo sintered bar are 1.2ppm Cr, 3ppm Fe, 44ppm Zr, 150ppm W. Most of metallic impurities were reduced below the order of ppm except zirconium and tungsten by the selective evaporation. In the removal of nonmetallic impurities, oxygen and carbon impurities were lowered from 120 to 6ppm and from 157 to 106ppm, respectively, after first melting. Although the purification effect was not significant with the number of remelting, Vickers hardness was reduced from 217 to 195 and 184 in sequence with increasing the number of remelting.