• Journal of Powder Materials
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• v.9 no.5
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• pp.322-328
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• 2002

Fe-Co nanocomposite powders with different composition were prepared by chemical vapor condensation (CVC) process and their characterizations were studied by means of X-ray diffraction, transmission electron microscopy, and vibrating sample magnetometer. The particles having the mean size of 5~25 nm consisted of metallic cores and oxide shells. The Co contents and particle size increased with increasing the carrier gas flow rate of Co precursor. The saturation magnetization and coercivity increased with increasing Co content. and the saturation magnetization maximized at the 40 wt.%Co. The Fe-Co nanocomposite powder oxidized at $400^{\circ}C$ showed the maximum coercivity of 1739 Oe.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.2
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• pp.49-56
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• 2001

Diamond thin films have been deposited on the silicon substrate by inductively coupled radio frequency plasma enhanced chemical vapor deposition system. The morphological features of thin films depending on methane concentration and deposition time have been studied by scanning electron microscopy and Raman spectroscopy. The diamond particles deposited uniformly on silicon substrate($10{\times}10[mm^2]$) at the pressure of 1[torr], a methane concentration of 1[%], a hydrogen flow rate of 60[sccm], a substrate temperature of $840\{sim}870[^{\circ}C]$, an input power of 1[kw], and a deposition time of 1[hour]. With increasing deposition time, the diamond particles grew, and than about 3 hours have passed, the graphitic phase carbon thin film with "cauliflower-like" morphology deposited on the diamond thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.1-6
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• 2004

Dry etch characteristics of polysilicon with HBr/O$_2$ inductively coupled plasma (ICP) have been investigated. We determined etch late, uniformity, etch profiles, and selectivity with analyzing the cross-sectional scanning electron microscopy images obtained from top, center, bottom, right, and left positions. The etch rate of polysilicon was about 2500 $\AA$/min, which meets with the mass production for devices. The wafer level etch uniformity was within $\pm$5 ％. Etch profile showed 90$^{\circ}$ slopes without notches. The selectivity over photoresist was between 2:1∼4.5:1, depending on $O_2$ flow rate. The HBr-ICP etching showed higher PR selectivity, and sharper profile than the conventional Cl$_2$-RIE.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.783-785
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• 1998

In this study the emission characteristics of Sq dye undoped and doped specimen investigated. In Sq 14mol% doped specimen, OXD7 and Alq3 layer interpolated. This effect has been observed and mechanism characteristics have been examined. For OXD7 insert, hole flow the cathode intercept, and then hole accumulated. Because of increasing recombination probability of electron and hole highly pure color maintained. Simultaneously brightness characteristics and emission efficiency could improve.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1644-1651
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• 1989

In this paper, a two-dimensional numerical analysis of HEMT's with gate length of 0.6um is performed. In this case, Control Volume Formulation method which has been used in the analysis of heat transfer and fluid flow is used as a numerical method. As a mobility model, empirical formula including the velocithy overshoot phenomena is used instead of two-piece mobility model. The results obtained from this numerical analysis(i.e., the region in which cahnnel is formed, the strength of electric field in the channel, the distribution of potential, and the distribution of electron concentration etc.)are in good agreement with the previous analytic results. And our results also show the parasitic MESFET's operation in the range of the high gate voltage.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.39-43
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• 2001

$SiC_{x}N$_{y}$ film is deposited by electron cyclotron resonance plasma chemical vapor deposition system using $SiH_4$(5% in Ar), $CH_4$ and $N_2$. Ternary phase $SiC_{x}N$_{y}$ thin film deposited at the microwave power of 600 W and substrate temperature of 700 contains considerable amount of strong C-N bonds. Change in $CH_4$flow rate can effectively control the residual film stress, and typical surface roughness of 34.6 (rms) was obtained. Extreme]y high hardness (3952 Hv) and optical transmittance (95% at 633 nm) was achieved, which is suitable for a LIGA mask membrane application.

• 한국생물공학회:학술대회논문집
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• 2000.11a
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• pp.329-331
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• 2000

A marine bacterium, Pseudomonas aeruginosa BYK-2 KCTC 18012P was immobilized in modified polyvinyl alcohol for the continuous production of rhamnolipids. The stability of rhamnolipids production, the mechanical strength of beads and the scanning electron microscope of immobilized cell were determined in a repeated batch culture. The rhamnolipids production was maintained $80{\sim}90%$ stability of initial production, and the mechanical strength also was stable during the repeated batch culture more than 14 cycles. In the case of SEM studies, the internal distribution pattern of the cell entrapped in modified PVA beads was observed. On the basis of optimal conditions, the continuous culture was investigated in 1.8L air lift bioreactor. The result suggested 0.1g/h rhamnolipids was obtained from 1%(v/v) fish oil continuously in conditions of 1.2L working volume, 0.5vvm and 20ml/h flow rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.3-6
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• 2002

Plasma processing plays a significant role in semiconductor devices technology. Development of new plasma systems, such as high-density plasma reactors, required development of plasma theory to understand a whole process mechanism and to be able to explain and to predict processing results. A most important task in this way is to establish interconnections between input process parameters (working gas, pressure, flow rate, input power density) and various plasma subsystems (electron gas, volume and heterogeneous gas chemistry, transport), which are closely connected one with other. It will allow select optimal ways for processes optimization.

• Journal of the Korean Ceramic Society
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• v.31 no.6
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• pp.601-608
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• 1994

Aluminum oxide thin films were deposited on p-type(100) silicon substrates by electron cyclotron resonance plasma enhanced CVD(ECR-PECVD) using TMA[Al(CH3)3] and oxygen as reactant gases at 16$0^{\circ}C$ or lower temperatures. The aluminum oxide films deposited by ECR-PECVD have the amorphous structure with the refractive index of 1.62~1.64 and the O/Al ratio of 1.6~1.7. Oxygen flow rate necessary for the stable deposition of the aluminum oxide films increases as the deposition temperature increases. It was found from the OES analysis that the ECR plasma had les cooling effect by introducing the TMA reactant gas in comparison with the RF plasma. The properties of aluminum oxide films prepared by ECR-PECVD were compared with those prepared by RF-PECVD. The ECR-PECVD aluminum oxide films have the higher refractive indices, the lower contents of impurities (H and C) and the stronger wet etch resistance than those deposited by RF-PECVD.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1514-1515
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• 1998

Diamond thin films were deposited on n-type (100) Si wafers from $H_2-CH_4$ gas mixture by rf PACVD. Prior to deposition, mechanical scratching was done to improve density of nucleation sites with diamond paste of 3${\mu}m$. The microstructure of deposited diamond thin films was studied by using the following conditions : discharge power of 500W, $H_2$ flow rate of 50sccm, reaction pressure of 20torr, and $CH_4/H_2$ ratio of 0.3$\sim$1%. The deposited diamond thin films showed that the crystallite was increased at the lower methane concentration. The deposited thin films were characterized by Scanning Electron Microscopy. Raman Spectroscopy and Fourier-Transform Infrared Spectroscopy.