• Journal of Information Display
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• 제6권2호
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• pp.19-24
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• 2005

The density controlled carbon nanotubes (CNTs) are grown on the iron acetate nanoparticles by using the freeze-dry method. The iron-acetate [Fe(II)$(CH_3COO)_2$] solution is used to prepare the catalytic iron nanoparticles. The density of CNTs is controlled in order to enhance the field emission process. Furthermore, the patterning of the iron nanoparticle catalyst-layer for the fabrication of electronic devices is simply achieved by using alkaline solution, TMAH (tetramethylammonium hydroxide). We applied this patterning process of catalyst layer to form the electron emitter with under-gate type triode structure.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.724-726
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• 2004

Highly efficient blue organic light-emitting devices (OLEDs) utilizing the idea of copper phthalocyanine (CuPc)/N,N'-bis-(1-naphthyl)-N,N'-diphenyl,1,1'-biphenyl- 4,4'-diamine (NPB) composite hole transport layer (CPHTL) have been fabricated. The effect of inserting CPHTL upon the performance of blue OLEDs with 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) as the blue emitter has been investigated. Compared with the luminous efficiency of the standard blue device without CPHTL (1.33 cd/A), that of the device with 40:60 CuPc/NPB CPHTL has been increased by more than twice up to 2.96 cd/A with a Commission Internationale d'Eclairage (CIE) coordinates of(x = 0.15, y = 0.10) and a power efficiency of 1.46 lm/W (20 mA/$cm^2$) at 6.39 V. The increased device efficiency is attributed to an improved balance between hole and electron currents arriving at the recombination zone.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1470-1473
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• 2005

We proposed new triode-type Field Emitter Arays using Carbon NanoTubes(CNT-FEAs) as electron emission sources at low electric fields. The CNTs were selectively grown on the patterned catalyst layer by Plasma-Enhanced Chemical Vapor Deposition (PECVD). In this structure, gate electrodes are located underneath the cathode electrodes and extracted gate is surrounded by CNT emitters. Furthermore, in order to control density of CNTs, we investigated effect of using rapid thermal annealing (RTA).

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2008년도 춘계학술대회 논문집
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• pp.21-24
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• 2008

Properties of carbon nano fiber (CNF) as field emitters were described. Carbon nano fiber (CNF) of herringbone was prepared by thermal chemical vapor deposition(CVD). Field emitters mixed with organic binders, conductive materials and were prepared by screen-printing process. In order to increase field emissions, the surface treatment of rubbing & peel-off was applied to the printed CNF emitters on cathode electrode. The measurements of field emission properties were carried out by using a diode structure inline vacuum chamber. CNF of herringbone type showed good emission properties that a turn on field was as low as 2.1 $V/{\mu}m$ and current density was as large as 0.15 $mA/cm^2$ of 4.2 $V/{\mu}m$ with electric field. Through the results. we propose that CNFs are suitable for application of electron emitters in Field Emission Devices.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.651-654
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• 2002

We carried out 2-dimensional numerical calculations of electrostatic potential for triode field emitters with planar cathodes using the finite element method. As it turned out, the conventional triode structure with a planar cathode suffered from large gate current and wide spreading of emitted electrons. To circumvent these shortcomings, we proposed a new triode structure. By simply inserting a conducting layer of proper thickness on top of the cathode layer, we were able to modify the electric field distribution on the cathode surface so that low gate current and electron-focusing effect were achieved, simultaneously.

• 한국진공학회지
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• 제7권s1호
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• pp.134-139
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• 1998

Amorphous fluorocarbon (a-C:F) is of interest for low dielectric interlayer material, but in this work we applied this material to FED field emitter. N-doped a-C:F films were deposited by inductively coupled plasma chemical vapor deposition (ICPCVD). The Raman spectra were measured to study the film structure and inter-band optical absorption coefficients were measured using Perkin-Elmer UV-VIS-IR spectrophotometer and optical band gap was obtained using Tauc's plot. XPS spectrum and AFM image were investigated to study bond structure and surface morphology. Current-electric field(I-E) characteristic of the film was measured for the characterization of electron emission properties. The optimum doping concentration was found to be [N2]/[CF4]=9% in the gas phase. The turn-on field and the emission current density at $[N_2]/[CF_4]$=9% were found to be 7.34V/$\mu\textrm{m}$ and 16 $\mu\textrm{A}/\textrm{cm}^2$ at 12.8V/$\mu\textrm{m}$, respectively.

• 한국전기전자재료학회논문지
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• 제16권8호
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• pp.723-730
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• 2003

The CN(carbon nitrogen) nanofibers were formed by HIP(high isostatic pressure) process. From the field emission measurement, CN nanofibers shows an excellent characteristics of emitter, better than CNTs and carbon nanofibers. The structures obtained can be divided into three groups : bamboo-like fibers, corrugated structures and bead necklace-like fib res. Emission properties of CN nanofibers were investigated for spacing, between anode and cathode, variation. Turn-on fields was 1.4 v/$\mu\textrm{m}$. The time reliability and light emission test were carried out for about 100 hours. We suggest that CN nanofibers can be possibly applied to the high brightness flat lamp because of low turn-on field and time reliability

• 세라미스트
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• 제21권1호
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• pp.98-111
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• 2018

The lead-based perovskite (CH3NH3PbI3) material has a high molar coefficient, high crystallinity at low temperature, and long range of balanced electron-hole transport length. In addition, PCE of perovskite solar cells (PSCs) has been dramatically improved by over 22% by amending the electronic quality of perovskite and by using state-of-the-art hole transporting materials (HTMs) such as tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD) due to enhanced charge transport toward the electrode via properly aligned energy levels with respect to the perovskite. Replacing the spiro-OMeTAD with new HTMs with the desired properties of appropriate energy levels, high hole mobility in its pristine form, low cost, and easy processable materials is necessary for attaining highly efficient and stable PSCs, which are anticipated to be truly compatible for practical application. Furthermore, Recently Pb-free perovskite materials much attention as an alternative light-harvesting active layer material instead of lead based perovskite in photovoltaic cells. In this work, we demonstrate a Pb-free perovskite material for the light harvesting and emitter as optoelectronic devices.

• Journal of Information Display
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• 제2권3호
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• pp.44-47
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• 2001

The extracted field emission current can be used to controllably heat microfabricated cold field emission cathode tips. The heating can be sufficient to smooth and recrystallize the tip surface by surface self-diffusion, and at least partially clean the surface of contaminants by thermal desorption. Self-heating not only allows for the achievement and maintenance of stable emission characteristics, but can be used to make the current-voltage characteristics of microfabricated field emitter tips nearly identical to one another. The resulting improvement in emission uniformity will allow for more reliable array operation at increased electron emission current densities.

• ETRI Journal
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• 제24권4호
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• pp.290-298
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• 2002

We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenum-tip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for $n^+-doped$ a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed low-voltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.