• 제목/요약/키워드: Electron Configuration

검색결과 165건 처리시간 0.03초

티타늄이 코팅된 탄소나노튜브의 전계방출특성 (Field Emission Characteristic of Titanium-Coated Carbon Nanotube)

  • 이승연;우형수;박상식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.149-149
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    • 2010
  • The effect of titanium (Ti) coating over the surface of carbon nanotubes (CNTs) on field emission characteristics was investigated. Since the work function of CNTs emitter is about 5.0 eV, field emission would be observed at lower voltage if this work function gets lower. Work function of Ti is approximately 4.09eV. Field emission characteristics of as-grown and Ti-coated CNTs were measured in a diode-type configuration. The resultant emission characteristics revealed that thin($50{\AA}$-thick) Ti-coated CNTs could be a better electron emitter with lower emission voltage and higher emission efficiency.

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Realization of Vertically Stacked InGaAs/GaAs Quantum Wires on V-Grooves with (322) Facet Sidewalls by CHEMICAL Beam Epitaxy

  • Kim, Sung-Bock;Ro, Jeong-Rae;Lee, El-Hang
    • ETRI Journal
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    • 제20권2호
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    • pp.231-240
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    • 1998
  • We report, for the first time, the fabrication of vertically stacked InGaAs/GaAs quantum wires (QWRs) on V-grooved substrates by chemical beam epitaxy (CBE). To fabricate the vertically stacked QWRs structure, we have grown the GaAs resharpening barrier layers on V-grooves with (100)-(322) facet configuration instead of (100)-(111) base at 450 $^{\circ}C$. Under the conditions of low growth temperature, the growth rate of GaAs on the (322) sidewall is higher than that at the (100) bottom. Transmission electron microscopy verifies that the vertically stacked InGaAs QWRs were formed in sizes of about $200{\AA} {\times} 500{\sim}600 {\AA}$. Three distinct photoluminescence peaks related with side-quantum wells (QWLs), top-QWLs and QWRs were observed even at 200 K due to sufficient carrier and optical confinement. These results strongly suggest the existence of the quantized state in the vertically stacked InGaAs/GaAs QWRs grown by CBE.

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폐의 원발성 악성 섬유성 조직구종의 기관지솔질과 기관지세척 검사의 세포학적 소견 - 1예 보고 - (Bronchial Brushing and Bronchial Washing Cytologic Features of Primary Malignant Fibrous Histiocytoma of the Lung - A Case Report -)

  • 박미옥;안욱수
    • 대한세포병리학회지
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    • 제10권2호
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    • pp.151-155
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    • 1999
  • A case of primary malignant fibrous histiocytoma(MFH) of the lung occurring in a 62-year-old man is presented. After preoperative bronchial blushing and washing cytologic diagnosis of poorly differentiated carcinoma, surgical resection and lymph nodes dissection were performed. Subsequent histologic examination revealed a primary MFH. The diagnosis was confirmed by electron microscopic and immunohistochemical examinations. The review of the bronchial brushing and washing cytologic features disclosed many bipolar and a few unipolar spindle tumor cells with a "comel" configuration, mainly single cells, but also forming loose clusters. The nuclei were elongated and hyperchromatic and contained one or more irregular nucleoli. Scattered bizarre, multinucleated tumor giant cells were also present.

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CRT 텐션 마스크의 장력 이완 저감을 위한 연구 (A Study for Reducing Tension Loosening in CRT Tension Mask)

  • 정일섭
    • 한국정밀공학회지
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    • 제20권6호
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    • pp.214-221
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    • 2003
  • Tension mask assembly is positioned right behind the glass-made front panels of CRT type display devices. The frame-supported thin metal sheet contains numerous slits, through which electron beams are focused to enhance definition. Pretension is imposed on the masks, especially for enlarged flat screens, in order to avoid vibration due to acoustic or mechanical impact. High temperature assembly process subsequent to pretensioning, however, degenerates the creep resistance of common mask materials, and if tensile stress is high enough, tension on the mask may be loosened substantially due to creep deformation. In this study, the assembly is modeled as a combined structure of beams and wire array, and a numerical simulation is attempted for pretensioning followed by high temperature process. According to a model study, small amount of creep strain is likely to be generated, but its adverse influence is not negligible. Some structural modification measures to reduce the creep-induced tension loosening are proposed and evaluated. Also, optimal configuration of frame structure is sought for, which maintains high tension of masks and minimizes the possible creep of frame simultaneously.

Modeling an e-Beam Addressed Liquid Crystal Projection Display

  • Yang, Deng-Ke;Zhou, Fushan;Molitor, R.J.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.930-932
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    • 2002
  • We have carried a theoretical study on e-beam addressed liquid crystal projection display in which the liquid crystal is switched by the electric field of the charge, produced by an electron beam, on the surface of the display. We calculated the electric field produced by the surface charge, the liquid crystal director configuration and the profile of the transmitted light. We studied the factors affecting the resolution of the display. We also studied the effect of pretilt angle on the performance of the display. The e-beam addressed liquid crystal projection display potentially has the advantages of high resolution and high brightness.

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Transient Photocurrent in Amorphous Silicon Radiation Detectors

  • Lee, Hyoung-Koo;Suh, Tae-Suk;Choe, Bo-Young;Shinn, Kyung-Sub;Cho, Gyu-Seong
    • Nuclear Engineering and Technology
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    • 제29권6호
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    • pp.468-475
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    • 1997
  • The transient photocurrent in amorphous silicon radiation detectors (n-i-n and forward biased p-i-n) were analyzed. The transient photocurrents in these devices could be modeled using multiple trap levels in the forbidden gap. Using this model the rise and decay shapes of the photocurrents could be fitted. The decaying photocurrent shapes of the p-i-n and n-i-n devices after a short duration of light pulse showed a similar behavior at low dark current density levels, but at higher dark current density levels the photocurrent of the p-i-n diode decayed faster than that of the n-i-n, which could be explained by the decreased electron lifetimes in the forward biased p-i-n diode at high dark current densities. The transient photoconductive gain behaviors in the amorphous silicon radiation detectors are discussed in terms of device configuration, dark current density and time scale.

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Eu Doping Effect on $CaAl_2O_4:Eu^{2+}$ Phosphor Material

  • Bartwal, Kunwar Singh;Ryu, Ho-Jin
    • 반도체디스플레이기술학회지
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    • 제6권2호
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    • pp.65-68
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    • 2007
  • High brightness and long persistent luminescence phosphor $CaAl_2O_4:Eu^{2+}$ was prepared with varying $Eu^{2+}$ concentration by solid state reaction technique. Synthesized materials were investigated by powder X-ray diffractometer (XRD), SEM, TEM, photoluminescence excitation and emission spectra. Broad band UV excited luminescence of the $CaAl_2O_4:Eu^{2+}$ was observed in the blue region (${\lambda}_{max}\;=\;440\;nm$) due to transitions from the $4f^65d^1$ to the $4f^7$ configuration of the $Eu^{2+}$ ion. The decay time of the persistence indicated that the persistent luminescence phosphor has bright phosphorescence and maintains a long duration. These materials have great potential for outdoor night time displays.

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AZ91D 상용 마그네슘합금위에 316L과 420의 스테인레스 스틸의 플라즈마 코팅층의 마모와 기계적 특성 (Tribological and mechanical properties of plasssma sprayed 316L and 420 stainless steel layers on the AZ91D commercial magesium alloy)

  • 이수완;박종문;이명호;짐진수
    • 한국표면공학회지
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    • 제30권6호
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    • pp.365-373
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    • 1997
  • 316L and 420 Stainless steels were deposited onto AZ9ID commercial magnesium alloy by plasma spray process with various gas flow rate of, TEX>$H_2$ secondary gas. And hardness as well as were track volume, coefficient of friction also had been measured. wear and hardness were measured by using reciprocal configuration tribometer and microghardness tester, respectively. Also, the microstructure of the coatings surface the cross sectional area of coating surface and cross sectional area of coaing/Substrate interface had been analyzed with Scanning Electron Microscope(SEM) and Optical microscope(OM). Finally, optimal process parameters for the improvement of coating efficiency such as mechanical property and wear behavior were examined.

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대향 음극형 플라즈마 프로세스의 글로우 방전특성에 관한 연구 (A Study on the Glow Discharge Characteristics of Facing Target Plasma Process)

  • Park, Chung-Hoo;Cho, Jung-Soo;Kim, Kwang-Hwa;Sung, Youl-Mool
    • 대한전기학회논문지
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    • 제43권3호
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    • pp.478-484
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    • 1994
  • Facing target dc sputtering system developed by Hoshi et al. has simple configuration and high deposition rate under moderate substrate temperature in the range of pressure 5x10S0-4T - 1x10S0-2T torr. In this system, magnetic field should be applied perpendicular to the target surface in order to confine high energy secondary electrons between two targets. Because of this magnetic field, the glow discharge characteristics are very different from dc planar diode system showing some unstable discharge region. In this paper, the glow discharge characteristics of this system have been studied under the condition of Ti targets with Ar-NS12T(10%) as working gas. It is found that this system has stable discharge region under the discharge current density of 15-30(mA/cmS02T). The plasma density and electron temperature are in the range of 10S010Y - 10S011T(CMS0-3T) and 2.5-5(eV), respectively.

Inorganic and Transition Metal Azides

  • Seok, Won-K.;Klapotke, Thomas M.
    • Bulletin of the Korean Chemical Society
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    • 제31권4호
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    • pp.781-788
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    • 2010
  • Experimental and theoretical studies show that all covalent azides possess a nonlinear azide group. They also rationalize this remarkable structural feature. We have seen that the most important non-covalent contributions in the covalently bound azides system (X-N1-N2-N3) are the $\pi$-delocalization over the entire molecule and a strong negative hyperconjugation which donates electron density from the filled $\sigma$ (X-N1) orbital into the unfilled, antibonding $\pi^*$ (N2-N3) orbital. For transition metal azide complexes, a bent configuration and a small difference between the N-N bond lengths, generally the longer one being adjacent to the transition metal, were observed.