• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.5
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• pp.787-794
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• 2001

In this paper, the development of large-signal model extractor for GaAs FET device through the Monolithic Microwave integrated Circuit(MMIC) is presented. The measurement program controlled by personal computer is developed for the processing of an amount of measured data, and the de-embedding algorithm is added to the program for voltage dropping as attached series resistance on measurement system. The small-signal model parameters are typically consisted of 7 elements that are considered as complexity of large-signal model and its the accuracy of the small-signal model is verified through comparing with measured data as varied bias point. The fitting function model, one of the empirical model, is used for quick simulation. In the process of large-signal model parameter extraction, one-dimensional optimization method is proposed and optimized parameters are extracted. This study can reduce the modeling and measuring time and can secure a suitable model for circuit.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.3
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• pp.445-453
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• 2000

In this paper, the method of designing an active inductor for MMIC is proposed. The proposed tunable active inductor is composed of a cascade FET with feedback capacitors and resistors. Because of a very low series resistance in the proposed inductor, a very high Q factor can be obtained. Also it has an excellent characteristics suitable for high frequency band. The inductance value can be changed by controlling feedback capacitors, resistors and a bias voltage respectively. When the feedback resistor and parallel resistor within circuits are varied, the inductance value is changed from 0.2 nH to 1.7 nH in the range 1 to 15 GHz. Also we designed bandpass filter using the proposed active inductor and it shows the insertion loss of 0.4 dB and return loss, 20 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.7
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• pp.675-678
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• 2015

In this paper, we proposed a multi-function conversion block for microwave receiver. The proposed multi-function conversion block is composed of a broadband voltage controlled oscillator and a dual-mode mixer. Depending on whether the bias voltage is supplied, the first IF(Intermediate Frequency) output frequency(4,595 MHz/6,045 MHz) needed in microwave receiver is converted to 720 MHz and the another IF output frequency(720 MHz) for receiving Ku-band has the multi-functional operations of the dual mode that are bypass and attenuation without frequency conversion. Implementation and measurement results show that each intermediate frequency has conversion loss characteristic according to the LO power. The LO power conversion loss of 4,595 MHz at the LO levels from 2 dBm to 4 dBm is 13 dB, another of 6,035 MHz is 12 dB and the other of 720 MHz is 7.0 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.9
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• pp.1045-1049
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• 2010

In this paper, we proposed an ultra-low power low noise amplifier(LNA) using a TSMC 0.18 ${\mu}m$ RF CMOS process. To satisfy the low power consumption with high gain, a current-reused technique is utilized. In addition, a low bias voltage in the subthreshold region is utilized to achieve ultra low power characteristic. The designed LNA has the voltage gain of 13.8 dB and noise figure(NF) of 3.4 dB at 2.4 GHz. The total power consumption of the designed LNA is only 0.63 mW from 0.9 V supply voltage and chip occupies $1.1\;mm{\times}0.8\;mm$ area.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.9
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• pp.791-799
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• 2016

This paper presents the design of reconfigurable frequency selective surfaces for X-band bandpass operation with improved isolation. The proposed reconfigurable FSS is composed of a four-legged loaded element, a inductive stub and a bias grid. The PIN diode is located between the four-legged loaded element and the stub, which can control the frequency response of reconfigurable FSS by ON/OFF state. By adjusting the length of the stub, the desired bandpass frequency and the improved isolation between ON and OFF state can be obtained. For validation of simulated results, we have carried out transmission characteristic measurements using rectangular waveguide of WR-90. The measured results are in good agreements with the simulated results.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.196-196
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• 2012

Graphene, two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, has grabbled appreciable attention due to its extraordinary mechanical, thermal, electrical, and optical properties. Based on the graphene's high carrier mobility, high frequency graphene field effect transistors have been developed. Graphene is useful for photonic components as well as for the applications in electronic devices. Graphene's unique optical properties allowed us to develop ultra wide-bandwidth optical modulator, photo-detector, and broadband polarizer. Graphene can support SPP-like surface wave because it is considered as a two-dimensional metal-like systems. The SPPs are associated with the coupling between collective oscillation of free electrons in the metal and electromagnetic waves. The charged free carriers in the graphene contribute to support the surface waves at the graphene-dielectric interface by coupling to the electromagnetic wave. In addition, graphene can control the surface waves because its charge carrier density is tunable by means of a chemical doping method, varying the Fermi level by applying gate bias voltage, and/or applying magnetic field. As an extended application of graphene in photonics, we investigated the characteristics of the graphene-based plasmonic waveguide for optical signal transmission. The graphene strips embedded in a dielectric are served as a high-frequency optical signal guiding medium. The TM polarization wave is transmitted 6 mm-long graphene waveguide with the averaged extinction ratio of 19 dB at the telecom wavelength of $1.31{\mu}m$. 2.5 Gbps data transmission was successfully accomplished with the graphene waveguide. Based on these experimental results, we concluded that the graphene-based plasmonic waveguide can be exploited further for development of next-generation integrated photonic circuits on a chip.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.2
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• pp.169-179
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• 1999

In this paper, a GaAs MESFET single-ended resistive mixer with high linearity and isolation is designed. The bias voltage of this mixer is applied only gate of GaAs MESFET to use the channel resistance. The LO is applied the gate and the RF is applied the drain through 7-pole hairpin bandpass filter to obtain the proper isolation thru LO-RF. The IF is extracted from the source with short circuit and lowpass filter. Using extracted equivalent circuits for LO and RF, conversion loss is calculated and compared with result of harmonic balance analysis. Measured conversion loss of this S-band down converter mixer is 8.2~10.5dB by considering the measured 3.0~3.4dB RF 7-pole hairpin bandpass filter loss and IP3in is 26.5dBm at Vg=-0.85~-1.0V in distortion performance.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.4
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• pp.440-446
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• 2011

In this paper, a X-band 50 W pulsed solid state power amplifier(SSPA) is designed and fabricated for radar systems. The SSPA consists of a driver amplifier, a high power amplifier, and a pulse modulator. The high power stage employes four 25 W GaAs FET to deliver 50 W at X-band. To meet the stringent target specification for the SSPA, we used a new hybrid pulse switching method, which combine the advantage of pulse modulation and bias switching method. The fabricated SSPA shows a power gain of 44.2 dB, an output power of 50 W over a 1.12 GHz bandwidth. Also, pulse droop < 1 dB meet the design goals and a rise/fall time is less than 12.45 ns. Fabricated X-band pulsed SSPA size is compact with overall size of $150{\times}105{\times}30\;mm^3$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.1
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• pp.92-98
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• 2014

In this paper, the reconfigurable frequency selective surface for C-band was designed using patch array and grid structure. Frequency reconfigurability was obtained by varying the capacitance from varactor diode. From the optimized design parameters, we fabricated the reconfigurable frequency selective surface using the FPCB(Flexible Printed Circuit Board) and commercial varactor diode and measured the frequency reconfigurability for different bias voltage. From the measurement results, proposed structure has the wideband operating frequency of 6.6~7.6 GHz. We can applied this proposed structure to the smooth curved surface like as radome of aircraft or warship.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.4
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• pp.551-561
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• 2001

In this paper, the large signal unified model is established for H4O GaAs pHEMT of GEC-Marconi using modified Curtice model. This unified model includes DC characteristic, small signal, and noise characteristic as various bias. Particularly, the model can simply and physically explain trans-conductance $(g_m)$ of pHEMT using modified Curtice model, and can tell the difference $g_m$, $R_ds$ at DC and these at AC through inclusion of internal RF-choke. The results of the established model built up using SDD in HP-Eessof show good agreement to the S/W measured data in DC, small signal, and noise characteristic. This model can also be applied to various computer aided analysis, such as linear simulation, 1-tone harmonic balance simulation, and multi-tone harmonic balance simulation, so the LNA(Low Noise Amplifier), oscillator, and mixer design has been shown using this model library.