• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.370-375
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• 2016

In this paper, we investigated the electrical properties of crystalline silicon solar cell fabricated with Ni/Cu/Ag plating. The laser process was used to ablate silicon nitride layer as well as to form the selective emitter. Phosphoric acid layer was spin-coated to prevent damage caused by laser and formed selective emitter during laser process. As a result, the contact resistance was decreased by lower sheet resistance in electrode region. Low sheet resistance was obtained by increasing laser current, but efficiency and open circuit voltage were decreased by damage on the wafer surface. KOH treatment was used to remove the laser damage on the silicon surface prior to metalization of the front electrode by Ni/Cu/Ag plating. Ni and Cu were plated for each 4 minutes and 16 minutes and very thin layer of Ag with $1{\mu}m$ thickness was plated onto Ni/Cu electrode for 30 seconds to prevent oxidation of the electrode. The silicon solar cells with KOH treatment showed the 0.2% improved efficiency compared to those without treatment.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.10
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• pp.1786-1791
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• 2016

The damage has occurred inside the semiconductor pattern When using conventional wet station for semiconductor. It was used for electrolytic ion water generator in order to prevent damage to the semiconductor pattern. It was designed and developed a flow path electrode and the mesh electrode to check the efficiency of the electrode. And It confirmed the expected results through the simulation of the flow path. and ORP were measured in accordance with the current and voltage of mesh electrode and flow paht electrodes. Flow path electrode 22A is 3V, up to pH 9.8, the value of ORP-558mV was measured and the mesh electrode was measured up to pH 9.8, ORP -350mV.

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.2
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• pp.90-95
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• 2021

In contrast to AC grounding systems, the ground electrode in DC systems continuously maintains positive or negative polarity. Ground electrodes with (+) polarity proceeds by oxidation reaction. Thus, the DC current should flow opposite to the polarity of the leakage current flowing through the (+) ground electrode by using a compensation electrode, and the current flowing through the (+) ground electrode can be 0A. However, according to protecting the (+) ground electrode, the compensation electrode corrodes and gets damaged. Thus, the (+) ground electrode must be protected from corrosion, and the service life of the compensation electrode must be extended. As an alternative, the average value of the current flowing through the compensation electrode should be equal with the value of the leakage current flowing through the (+) ground electrode by using the square waveform. Throughout the experiment, the degree of corrosion on the compensation electrode is analyzed by the frequency of the compensation electrode for a certain time. In the experiment, the frequencies of the square waveform are considered for 0.1, 1, 10, 20, 50, 100 Hz, and 1 kHz. Through experiments and analysis, the optimal frequency for reducing the electrolytic damage of the (+) electrode and compensation electrode in an LVDC grounding environment is determined.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.59-63
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• 2021

Upper electrode is one of core parts using plasma etching process at semiconductor. The purpose of this study is to analyze effects of cutting conditions for mechanical machining of silicon upper electrode. For this research, surface roughness of machined workpiece and depth of damage inside of silicon electrode are experimented and analyzed and different values of feed rate and depth of cut are applied for the experiments. From these experiments, it is verified that the surface roughness and internal damaged layer get worse according to take more fast feed rate. In conclusion, cutting condition is very important factor for machining. Results of this study can use to develop various parts which are made from single crystal silicon and affect various benefits to the semiconductor industry for better productivity.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.6
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• pp.574-581
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• 1991

Damage in film capacitors has been investigated, using FTIR and ESCA, aiming to elucidate the nature of electrode removal and the possibility of base films to be damaged. Also, tests were conducted to investigate the effect of a long-term thermal aging at elevated temperatures. Unsuccessful clearing or grape-clustering processes can induce a long-term degradation which involves the chemical and morphological changes. Major changes are the oxidation and the decrease in surface crystallinity possibly arising from the corona discharge. An immediate deterioration of BOPP film may occur when the air entrapped between the film layers induces an extensive autocatalytic oxidative degradation. This type of immediate damage may result in a premature failure at an early stage of qualification test. As far as the nature of electrode removal is concerned, a permanent removal of electrode materials was observed in the main erosion area.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.46-50
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• 2018

The purpose of this study is to analyze effects of filtering system of cutting fluid which is used for machining silicon electrode. For the research, different sizes of filter clothes are applied to check grain size of sludge of cutting fluid. Surface roughness of machined workpiece, depth of damage inside of silicon electrode, and suspended solids of cutting fluid are experimented and analyzed. From these experiments, it is verified that filtering system of cutting fluid is very important factor for machining. Results of this study can affect various benefits to the semiconductor industry for better productivity and better atmospheric pollution in workplace.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.16-16
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• 2011

Plasmas in saline solutions receive considerable attention in recent years. How the operating parameters influence the plasma characteristics and how the electrode erosion occurs have been topics that require further study. In the first part of this talk, the effect of the frequency on the plasmas characteristics in saline solution driven by 50~1000 Hz AC power will be presented. Two distinct modes, namely bubble and jetting modes, are identified. The bubble mode occurs under low frequencies. In this mode, one mm-sized bubble is tightly attached to the electrode tip and oscillates with the applied voltage. With an increase in the frequency, it shows the jetting mode, in which many smaller bubbles are continuous formed and jetted away from the electrode surface. Multiple mechanisms that are potentially responsible to such a change in bubble dynamics have been proposed and the dominant mechanism is identified. From the Stark broadening of the hydrogen optical emission line, electron densities in both modes are estimated. It shows clearly that the driving frequency greatly influences the bubble dynamics, which in turn alters the plasma behavior. In the second part, the study of the erosion of a tungsten electrode immersed in saline solution under conditions suitable for bio-medical applications is presented. The electrode is immersed in 0.1 M saline solution and is positively or negatively biased using a DC power source up to 600 V. It is identified that when the electrode is positively biased, erosion by the surface electrolytic oxidation is the dominant mechanism with an applied voltage below 150 V. An increase in the applied voltage leads to the formation of the plasma and the damage by the plasma and the thermal effect becomes more prominent. The formation of the gas film at the electrode surface leads to the formation of the plasma and hinders the electrolytic erosion. In the negatively-biased electrode, no electrolytic oxidation is seen and the damage is mostly likely due to the plasma erosion and the thermal effect.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2004.05a
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• pp.149-154
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• 2004

In this paper, we observed an electrode structure that is an important element that decide life of compact fluorescent lamp. We measured winding and application type of electron emission material and electrode damage with SEM(Scanning Electron Microscope). From now on, we need to measure rather several difference aging-time sample than analyze a relation electrode between life

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.235-240
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• 2018

We propose a speedy two-step deposit process to form an Au electrode on hole transport layer(HTL) without any damage using a general thermal evaporator in a perovskite solar cell(PSC). An Au electrode with a thickness of 70 nm was prepared with one-step and two-step processes using a general thermal evaporator with a 30 cm source-substrate distance and $6.0{\times}10^{-6}$ torr vacuum. The one-step process deposits the Au film with the desirable thickness through a source power of 60 and 100 W at a time. The two-step process deposits a 7 nm-thick buffer layer with source power of 60, 70, and 80 W, and then deposits the remaining film thickness at higher source power of 80, 90, and 100 W. The photovoltaic properties and microstructure of these PSC devices with a glass/FTO/$TiO_2$/perovskite/HTL/Au electrode were measured by a solar simulator and field emission scanning electron microscope. The one-step process showed a low depo-temperature of $88.5^{\circ}C$ with a long deposition time of 90 minutes at 60 W. It showed a high depo-temperature of $135.4^{\circ}C$ with a short deposition time of 8 minutes at 100 W. All the samples showed an ECE lower than 2.8 % due to damage on the HTL. The two-step process offered an ECE higher than 6.25 % without HTL damage through a deposition temperature lower than $88^{\circ}C$ and a short deposition time within 20 minutes in general. Therefore, the proposed two-step process is favorable to produce an Au electrode layer for the PSC device with a general thermal evaporator.

• Journal of the Korean Ceramic Society
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• v.37 no.6
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• pp.530-536
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• 2000

During the grain growth of the PZT thin films by selective nucleation method using PZT seed, it was found that the grain size was saturated with the annealing temperature. The saturation of grain size was analyzed by the interfacial energy which appeared during the crystallization. The factors affecting the saturation of grain size were found to be the interfacial energy between perovskite phase and pyrochlore phase, and PZT thin film and the bottom Pt electrode. When the ion damage was introduced to the grain-size saturated PZT thin films, further lateral growth was observed. Pt bottom electrode thickness was changed to control the interfacial energy between the PZT thin film and the Pt bottom electrode. When Pt thickness was increased, the grain size was also increased, because the lattice parameter of Pt films was increased with the thickness of the Pt films. The incubation time of nucleation was increased with the amount of the ion damage on the Pt films.