• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.6
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• pp.43-49
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• 1997

Tungsten poycide has studied gate oxide reliability and dielectric strength charactristics as the composition of gate electrode which applied submicron on CMOS and MOS device for optimizing gate electrode resistivity. The gate oxide reliability has been tested using the TDDB(time dependent dielectric breakdwon) and SCTDDB (stepped current TDDB) and corelation between polysilicon and WSi$_{2}$ layer. iN the case of high intrinsic reliability and good breakdown chracteristics on polysilicon, confirmed that tungsten polycide layer is a better reliabilify properities than polysilicon layer. Also, hole trap is detected on the polysilicon structure meanwhile electron trap is detected on polycide structure. In the case of electron trap, the WSi$_{2}$ layer is larger interface trap genration than polysilicon on large POCL$_{3}$ doping time and high POCL$_{3}$ doping temperature condition. WSi$_{2}$ layer's leakage current is less than 1 order and dielectric strength is a larger than 2MV/cm.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1821-1823
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• 2000

New ITO Electrode structure informed that the efficiency is increased by about 30% compared to the conventional type has been investigated during addressing period. As a result, the addressing time is decreased by about 20% compared to the conventional type. And wall charge distribution was analyzed quantitatively in three electrodes during addressing period.

• Journal of KIEE
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• v.11 no.1
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• pp.46-50
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• 2001

In order to improve the luminous efficiency in ac PDP(Plasma Display Panel), we have suggested the new structures of sustain electrodes with waffle-type barrier ribs and the discharge current for a given pulse voltage has been decreased by eliminating the electrode area which has nothing to do with visible light emission area compared with conventional structure. As a result, the luminous efficiency was improved about 30% compared with the conventional structure.

• Journal of Sensor Science and Technology
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• v.24 no.2
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• pp.83-87
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• 2015

In this paper, we fabricated a low-cost glucose sensor with a simpler structure and fabrication process than the existing glucose sensor. The currently used glucose sensor has a three-layer structure with upper, middle, and bottom plates; here, we fabricated a single-layer glucose sensor using only a printing and dispensing process. We successfully fabricated the glucose sensor using a simple method involving the formation of an electrode and insulator layer through a 2- or 3-step printing process on plastic or paper film, followed by the dispensing of glucose oxidase solution on the electrode. Cyclic voltammetry (CV) and cyclic amperometry (CA) measurements were used to evaluate the characteristics of the fabricated single-layer glucose sensor. Also, its sensitivity was analyzed through glucose-controlled blood measurements. Hence, a low-cost single-layer glucose sensor was fabricated with evaluation of its characteristics demonstrating that it has useful application in medicine.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.311-314
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• 1999

Ferroelectric PZT heterolayered thin films were fabricated by spin coating method on the Pt/Ti/SiO$_2$/Si substrate using PZT(10/90) and PZT(90/10) metal alkoxide solutions. All PZT heterolayered films showed a homogeneous grain structure without presence of the rosette structure. It can be assumed that the lower PZT layers a role of nucleation site or seeding layer for the formation of the upper PZT layer. Zr and Ti diffusion into the Pt electrode were mainly distributed at the surface of Pt electrode beneath the PZT/Pt interface. The PZT/Pt interfacial layer showed a microstructure characterized by a grain phase surrounded by a Pb-deficient pyrochlore matrix phase. The relative dielectric constant and the dielectric loss of the PZT-6 film were 567 and 3.6, respectively.

• Journal of Electrochemical Science and Technology
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• v.12 no.2
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• pp.167-172
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• 2021

he progressively improved sensing sensitivity (∆λ_SPR/∆n, nm/RIU) to detect the refractive index is observed on the SPR platform of an Au-covered epoxy gratings in an increase in potential cycling in a typical three-electrode cell. Here, a DVD-R optical disc was used as a structure template to prepare an Au-covered epoxy gratings, and the newly formed reverse track pitch structure on the epoxy substrate was used as a working electrode directly in aqueous sulfuric acid solution. It is expected that Au reconstruction by potential cycling in sulfuric acid electrolyte increases the packing density of Au atoms in the grain boundary and improves the propagation of electromagnetic waves.

• Transactions of the Korean hydrogen and new energy society
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• v.31 no.1
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• pp.23-32
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• 2020

The intermittent characteristics of renewable energy complicates the process of balancing supply with demand. Electrolysis technology can provide flexibility to grid management by converting electricity to hydrogen. Alkaline electrolysis has been recognized as established technology and utilized in industry for over 100 years. However, high overpotential of oxygen evolution reaction in alkaline water electrolysis reduces the overall efficiency and therefore requires the development of anode catalyst. In this study, Raney Ni-Zn-Fe electrode was prepared by electroplating and the electrode characteristics was studied by varying electroplating parameters like electrodeposition time, current density and substrate. The prepared Raney Ni-Zn-Fe electrode was electrochemically evaluated using linear sweep voltammetry. Physical and chemical analysis were conducted by scanning electron microscope, energy dispersive spectrometer, and X-ray diffraction. The plating time did not changed the morphology and composition of the electrode surface and showed a little effect on overpotential reduction. As the plating current density increased, Fe content on the surface increased and cauliflower-like structure appeared on the electrode surface. In particular, the overpotential of the electrode, which was prepared at the plating current density of 320 mA/㎠, has showed the lowest value of 268 mV at 50 mA/㎠. There was no distinguishable overpotential difference between the type of substrate for the electrodes prepared at 80 mA/㎠.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.93-99
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• 2011

We investigated how the surface roughness of electrode affects the charge injection at the pentacene/Au interface. After depositing Au film on the Si substrate by sputtering, we annealed the sample to control the Au surface roughness. Pentacene and Au top electrode were subsequently deposited to complete the sample. The nucleation density of pentacene was slightly higher on the rougher Au electrode, but surface morphologies of thick pentacene films were similar on both the as-prepared and the roughened Au electrodes. The current-voltage curves obtained from the Au/pentacene/Au structure measured as a function of temperature indicated that the interface barrier was higher for the rougher Au bottom-electrode. We propose that the higher barrier was caused by the lower work function of rougher electrode surface and the higher trap density at the interface.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.4
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• pp.821-825
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• 2004

The a-Si：H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si：H TFTs is inverted staggered. The gate electrode is formed by patterning with length of 8 ${\mu}m∼16 ${\mu}m. and width of 80∼200 ${\mu}m after depositing with gate electrode (Cr) 1500 under coming 7059 glass substrate. We have fabricated a-SiN：H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN：H (2000 ), a-Si：H(2000 ) and n+a-Si：H (500). We have deposited n+a-Si：H ,NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si：H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si：H TFTs decreasing parasitic capacitance of source-drain has channel length of 8 ~20 ${\mu}m and channel width of 80∼200 ${\mu}m. And it shows drain current of 8 ${\mu}A at 20 gate voltages, Ion/Ioff ratio of 108 and Vth of 4 volts.

• Journal of the Korean Applied Science and Technology
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• v.40 no.1
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• pp.71-80
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• 2023

Silver paste is a valuable electrode material for electronic device applications because it is easy to handle with relatively low heat treatment. This study treated the electrode surface using an atmospheric-pressure plasma jet on the silver-paste electrode. This plasma jet was generated in an argon atmosphere using a high voltage of 5.5 to 6.5 kV with an operating frequency of 11.5 kHz. Plasma-jet may be more beneficial to the printing process by performing it at atmospheric pressure. The electrode surface becomes hydrophilic quickly and contact angle variation is observed on the electrode surface as a function of plasma treatment time, applied voltage, and gas flow rate. Also, there was no deviation in the contact angle after the plasma treatment in the large-area sample, that means a uniform result could be obtained regardless of the substrate size. The outcomes of this study are expected to be very useful in forming a stacked structure in the manufacture of large-area electronic devices and future applications.