• 전기학회논문지
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• 제64권5호
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• pp.732-738
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• 2015

In ac discharge, emission efficiency shows an time-varying characteristics during discharge. The phenomenon is caused by the potential distribution changes during the discharge, which indicates that a specific potential distribution can contribute to a high improvement of the emission efficiency. To create an artificial environment for a potential distribution favorable to emission efficiency, we used the asymmetric electrode structure and proved the capability. Our results showed that the ratio of the area of anode to cathode became larger, the emission efficacy was greatly improved.

• 반도체디스플레이기술학회지
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• 제22권3호
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• pp.52-61
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• 2023

We designed a novel ultra-miniaturized microcolumn structure having an stigmator to significantly improve throughput per unit time, which is the biggest disadvantage of microcolumns. We adopted the structure of the stigmator in the form of an electrostatic octupole electrode, and used an electrostatic quadrupole deflector with a relatively simple structure considering the increase in wiring due to the introduction of the stigmator. We have dramatically reduced the effect of astigmatism that occurs when the electron beam probe is scanned to the periphery of the target by introducing the stigmator between the control electrode and the deflector. As our numerical analysis simulation results, the field of view obtained as a result of this study is about 46.3% improved compared to our previous study, and the electron beam probe size of less than 10 nm was achieved in the entire field of view.

• 대한전자공학회논문지SD
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• 제41권5호
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• pp.15-21
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• 2004

본 논문에서는 저전력 스위치에 사용되는 소자의 포화전압 특성을 개선하기 위해 새로운 구조의 BJT를 제안하고 있다 기존에 사용되던 finger transistor(FT)의 경우 포화전압이 높아 저전력 소자의 특성을 만족하지 않아 multi base island transistor(MBIT)로 구조를 변경함으로써 저전류 영역에서의 포화전압은 충분히 낮아 저전력용 소자의 특성을 만족하지만, 이 역시 고전류 영역에서는 여전히 포화전압이 높아져 저전력용 소자의 특성을 만족하지 못하는 문제가 발생한다. 이에 본 논문에서는 folded back electrode를 이용한 새로운 구조의 BJT(FBET)를 제안하여 그 특성을 조사하였다. 새로운 구조의 트랜지스터를 적용함으로써 MBIT 구조에 비해 에미터 면적은 35 % 증가하고 접촉창의 면적이 92 % 증가하여, 저 전류 영역에서의 포화 전압은 30 % 감소하였고 고 전류 영역에서의 포화 전압은 에미터 면적 증가와 에미터 접촉 창 면적 증가에 의해 각각 30 %와 7 %씩 감소하여 전체적으로는 37 %가 감소하는 특성을 나타내었다.

• Transactions on Electrical and Electronic Materials
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• 제6권4호
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• pp.177-185
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• 2005

Fatigue characteristics of lead zirconate titanate (PZT) films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) were investigated. The fatigue characteristics were investigated with respect to PZT film thickness, domain structure, fatigue pulse height, temperature, electrode materials and electrode configurations. The used top and bottom electrode materials were Pt and $RuO_2$. In the fatigue characteristics with fatigue pulse height and PZT film thickness, the fatigue rates are independent of the applied fatigue pulse height at the electric field regions to saturate the P-E hysteresis and polarization $(P^*,\;P^A)$ characteristics. The unipolar and bipolar fatigue characteristics of PZT capacitors with four different electrode configurations $(Pt//Pt,\;Pt//RuO_2,\;RuO_2//Pt,\;and\;RuO_2//RuO_2)$ were also investigated. The polarization-shifts during the unipolar fatigue and the temperature dependence of fatigue rate suggest that the migration of charged defects should not be expected in our CVD-PZT films. It seems that the polarization degradations are attributed to the formation of charged defects only at the Pt/PZT interface during the domain switching. The charged defects pin the domain wall at the vicinity of Pt/PZT interface. When the top and bottom electrode configurations are of asymmetric $(Pt//RuO_2,\;RuO_2//Pt)$, the internal fields can be generated by the difference of charged defect densities between top and bottom interfaces.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.323-326
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• 2003

In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET"(Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of the proposed LTEMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTEMOSFET is 250V. At the same size, a increase of the forward blocking voltage of about 1.6 times relative to the conventional MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide, the electric field in the device are crowded to trench oxide. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

• 한국재료학회지
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• 제13권2호
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• pp.101-105
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• 2003

In this study, we have investigated the availability of the electroless Ni-B plating for a diffusion barrier of the bus electrode. The Ni-B layer of 1$\beta$: thick was electroless deposited on the electroplated Cu bus electrode for AC plasma display. The layer was to encapsulate Cu bus electrode to prevent from its oxidation and to serve as a diffusion barrier against Cu contamination of the transparent dielectric layer in AC plasma display. The microstructure of the as-plated barrier layer was made of an amorphous phase and the structure was converted to crystalline at about 30$0^{\circ}C$. The concentration of boron was about 5∼6 wt.% in the electroless Ni-B deposit regardless of DMAB concentration. The electroless Ni-B deposit was coated on the surface of the electroplated Cu bus electrode uniformly. And the electroless Ni-B plating was found to be an appropriate process to form the diffusion barrier.

• 한국세라믹학회지
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• 제35권11호
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• pp.1121-1129
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• 1998

Reactions between Ag-Pd internal electrode materials and{{{{ { {Bi }_{2 }O }_{3 } }} in multilayer chip varistor were in-vestigated. For more than 1 mol%{{{{ { {Bi }_{2 }O }_{3 } }} in varistor composition internal electrode structure was destroyed due to the reaction between internal electrode and{{{{ { {Bi }_{2 }O }_{3 } }} But for typical varistor compositions (below 1 mol% of{{{{ { {Bi }_{2 }O }_{3 } }} content) microstructural changes around the internal electrode were not observed. However SEM-EDS and TEM-EDS analysis showed the uneven distribution of{{{{ { {Bi }_{2 }O }_{3 } }} in the internal electrode which was due to the migration of{{{{ { {Bi }_{2 }O }_{3 } }} to the electorde during sintering. As a results the nonlinear coefficient of multilayer varistor showed very large distribution as well as the breakdown voltage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.615-616
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• 2005

Carbon Nanotubes (CNT) on flexible indium tin oxide (ITO) PET films were prepared for dye-sensitized solar cell (DSSC). These CNTs were prepared by spray coating method for various amount of light transparency. Also, Pt counter electrode was prepared by electro deposition method. All $TiO_2$ electrodes were deposited on ITO-PET films by spray coating method. Micro structural images show that CNT counter electrodes prepared by spray-coating have more dense structure with increasing spraying time (0 to 60 seconds). DSSC consisting of $TiO_2$ electrode and CNT counter electrode was fabricated with various amount of light absorption. DSSC have higher light energy conversion efficiency with increasing the thickness of CNT counter electrode. CNT counter electrode is at least compatible to that of CNT counter electrode.

• 대한의용생체공학회:의공학회지
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• 제15권1호
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• pp.1-8
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• 1994

Electrofusion of cabbage protoplasts was performed with a developed equipment which consists of a parallel wire electrode, a AC field generator, and a pulse generator. Exposure of protoplasts to an alternating current field of 450 KHz causes attraction to each other which leads to chains of protoplasts extending from the electrode. Intra-specific protoplast fusion was effectively induced within the pearl chains by the additional application of a single high-intensity DC square wave pulse of 1 KV/cm for 1-3 msec. To improve the performance, micro fusion electrode fabricated from the semiconductor technology and microcontroller based field an, d pulse generator was proposed. The viability of protoplasts after an application of electric field at optimum condition was reduced by only 5 % compared with that of pre-application. A prototype of fusion electrode, which consists of insulator-structure, was successfully fabricated by using photosensitive polyimide.

• Journal of Information Display
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• 제4권4호
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• pp.13-18
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• 2003

One of the most important issues in AC PDP is the improvement of luminous efficiency. One possible method for achieving this aim is by increasing Xe partial pressure in discharge gas mixture. The increase of Xe ratio, however, causes the driving voltage to rise, even if brightness is increased. In this study, a new electrode shape is proposed. A test panel fabricated by using a new electrode shows that efficacy has improved by 25 % and sustain voltage has decreased by 20 % compared with the conventional structure.