• Proceedings of the Korean Society For Composite Materials Conference
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• 2003.04a
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• pp.117-120
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• 2003

Electro-micromechanical techniques were applied using four-probe method for carbon nanotube (CNT) or nanofiber (CNF)/epoxy composites with their content. Carbon black (CB) was used to compare with CNT and CNF. The fracture of carbon fiber was detected by nondestructive acoustic emission (AE) relating to electrical resistivity for double-matrix composites test. Sensing for fiber tension was performed by electro-pullout test under uniform cyclic strain. The sensitivity for fiber damage such as fiber fracture and fiber tension was the highest for CNT/epoxy composites, and in CB case they were the lowest compared with CNT and CNF. Reinforcing effect of CNT obtained from apparent modulus measurement was the highest in the same content. The results obtained from sensing fiber damage were correlated with the morphological observation of nano-scale structure using FE-SEM. The information on fiber damage and matrix deformation and reinforcing effect of carbon nanocomposites could be obtained from electrical resistivity measurement as a new concept of nondestructive evaluation.

• International Journal of Air-Conditioning and Refrigeration
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• v.13 no.1
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• pp.44-50
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• 2005

In the present study, the characteristics of upward bubble flow were experimentally investigated in a liquid bath. An electro-conductivity probe was used to measure local volume fraction and bubble frequency. Since the gas was concentrated at the near the nozzle, the flow parameters were high near the nozzle. In general their axial and radial values tended to decrease with increasing distance. For visualization of flow characteristics, a Particle Image Velocimetry (PIV) and a thermo-vision camera were used in the present study. The experimental results showed that heat transfer from bubble surface to water was largely completed within z = 10 mm from the nozzle, and then the temperature of bubble surface reached that of water rapidly. Due to the centrifugal force, the flow was more developed near the wall than at bubble-water plume. Vortex flow in the bottom region was relatively weaker than that in the upper region.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.43-49
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• 2010

Direct printing technology is an attractive metallization method, which has become immerging as "Green technology" to the conventional photolithography, on account of low cost, simple process and environment-friendliness. In order to commercialize the printed electronics in industry, it is essential to evaluate the electrical properties of conductive circuits using direct printing technology. In this contribution, we focused on the electrical characteristics of inkjet-printed circuits. A Cu nanoink was inkjet-printed onto a Bisaleimide triazine(BT) substrate with parallel transmission line(PTL) and coplanar waveguide(CPW) type, then was sintered at $250^{\circ}C$ for 30 min. We calculated the resistivity of printed circuits through direct current resistance by the measurement of I-V curve: the resistivity was approximately 0.558 ${\mu}{\Omega}{\cdot}cm$ which is about 3.3 times that of bulk Cu. Cascade's probe system in the frequency range from 0 to 30 GHz were employed to measure the Scattering parameter(S-parameter) with or without a gap between the substrate and the probe station chuck. The result of measured S-parameter showed that all printed circuits had over 5 dB of return loss in the entire frequency range. In the curve of insertion loss, $S_{21}$, showed that the PTL type circuits had better transmission of radio frequency (RF) than CPW type.

• Korean Journal of Materials Research
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• v.19 no.6
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• pp.344-348
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• 2009

The electrolyte effects of the electroplating solution in Cu films grown by ElectroPlating Deposition(EPD) were investigated. The electroplated Cu films were deposited on the Cu(20 nm)/Ti (20 nm)/p-type Si(100) substrate. Potentiostatic electrodeposition was carried out using three terminal methods: 1) an Ag/AgCl reference electrode, 2) a platinum plate as a counter electrode, and 3) a seed layer as a working electrode. In this study, we changed the concentration of a plating electrolyte that was composed of $CuSO_4$, $H_2SO_4$ and HCl. The resistivity was measured with a four-point probe and the material properties were investigated by using XRD(X-ray Diffraction), an AFM(Atomic Force Microscope), a FE-SEM(Field Emission Scanning Electron Microscope) and an XPS(X-ray Photoelectron Spectroscopy). From the results, we concluded that the increase of the concentration of electrolytes led to the increase of the film density and the decrease of the electrical resistivity of the electroplated Cu film.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1512-1515
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• 1996

Dense $SiC-ZrB_2$ electro-conductive ceramic composites were obtained by hot pressing for high temperature structural application. The influences of the $ZrB_2$ additions an the mechanical and electrical properties of $SiC-ZrB_2$ composites were investigated. Samples were prepared by adding 15, 30, 45 vol.% $ZrB_2$ particles as a second phase to a SiC matrix. Sintering of monolithic SiC and $SiC-ZrB_2$ composites were achieved by hot pressing under a $10^{-4}$ torr vacuum atmosphere from 1000 to $2000^{\circ}C$ with a pressure of 30 MPa and held for 60 minutes at $2000^{\circ}C$. SiC and $SiC-ZrB_2$ samples obtained by hot pressing were fully dense with the relative densities over 99%. Flexural strength and fracture toughness of the samples were improved with the $ZrB_2$ contents. In the case of SiC sample containing 30vol.% $ZrB_2$, the flexural strength and fracture toughness showed 45% and 60% increase, respectively compared to those of monolithic SiC sample. The electrical resistivities of $SiC-ZrB_2$ composites were measured utilizing the four-point probe method and they decreased significantly with Increasing $ZrB_2$ contents. The resistivity of SiC-30vol.% $ZrB_2$ showed $6.50{\times}10^{-4}{\Omega}{\cdot}cm$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.2
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• pp.79-93
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• 1991

With the advent of ULSI, many problems in previous metallization techniques and interconnection materials have become more serious. In this work, selective deposition of copper to fill the submicron contact has been tried. After forming electro-deposited copper films on p-type (100) silicon wafer using 0.75M $CuSO_4{\cdot}$5H_2O$ as an electrolyte, the effect of deposition time, current density and concentration of an additive on film properties were investigated. Film thickness, particle size and resistivity were analyzed by Alpha Step, SEM and 4 - point probe measurement respectively. The deposition rate was about $0.5-0.6\mu\textrm{m}$/min at $2A/dm^2$ and the particle size increased with increasing current density. The resistivities of electro-deposited copper films were about $3-6{\mu}{\Omega}{\cdot}$cm for the particle size above $4000{\AA}$. By the addition of 0.2 g/l gelatin, the particle size was reduced to less than $0.1{\mu}m $ and selective plugging of copper on submicron contacts could be successfully achieved.