• Title/Summary/Keyword: Electro-polishing

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A Study on the Characteristics of Electro Polishing and Utility Materials for Transit High Purity Gas (청정도 가스 이송용 재료의 특성과 전해연마에 관한 연구)

  • Lee, Jong-Hyung;Park, Shin-Kyu;Yang, Seong-Hyeon
    • Journal of the Korean Society of Industry Convergence
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    • v.7 no.3
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    • pp.259-263
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    • 2004
  • In the manufacture progress of LCD or semiconductor, there are used many kinds of gas like erosion gas, dilution gas, toxic gas as a progress which used these gas there are required high puritize to increase accumulation rate of semiconductor or LCD materials work progress of semiconductor or LCD it demand many things like the material which could minimize metallic dust that could be occured by reaction between gas and transfer pipe laying material, illumination of the surface, emition of the gas, metal liquation, welding etc also demand quality geting stricted. Material-Low-sulfur-contend (0.007-0010), vacuum-arc-remelt(VAR), seamless, high-purity tubing material is recommend for enhance welding lower surface defect density All wetted stainless steel surface must be 316LSS elecrto polishinged with ${\leq}0.254{\mu}m$($10.0{\mu}in$) Ra average surface finish, $Cr/Fe{\geq}1.1$ and $Cr_2O_3$ thickness ${\geq}25{\AA}$ From the AES analytical the oxide layer thickness (23.5~36 angstroms silicon dioxide equivalent) and chromum to iron ratios is similar to those generally found on electropolished stainless steel., molybdenum and silicon contaminants ; elements characteristic of stainless steel (iron, nickel and chromium); and oxygen were found on the surface Phosphorus and nitrogen are common contaminants from the electropolish and passivation steps.

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Surface Treatment Effect on Electrochemical characteristics of Al Alloy for ship

  • Lee, Seung-Jun;Kim, Seong-Jong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2017.05a
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    • pp.149-149
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    • 2017
  • Aluminum alloys have poor corrosion resistance compared to the pure aluminum due to the additive elements. Thus, anodizing technology artificially generating thick oxide films are widely applied nowadays in order to improve corrosion resistance. Anodizing is one of the surface modification techniques, which is commercially applicable to a large surface at a low price. However, most studies up to now have focused on its commercialization with hardly any research on the assessment and improvement of the physical characteristics of the anodized films. Therefore, this study aims to select the optimum temperature of sulfuric electrolyte to perform excellent corrosion resistance in the harsh marine environment through electrochemical experiment in the seawater upon generating porous films by variating the temperatures of sulfuric electrolyte. To fabricate uniform porous film of 5083 aluminum alloy, we conducted electro-polishing under the 25 V at $5^{\circ}C$ condition for three minutes using mixed solution of ethanol (95 %) and perchloric (70 %) acid with volume ratio of 4:1. Afterward, the first step surface modification was performed using sulfuric acid as an electrolyte where the electrolyte concentration was maintained at 10 vol.% by using a jacketed beaker. For anode, 5083 aluminum alloy with thickness of 5 mm and size of $2cm{\times}2cm$ was used, while platinum electrode was used for cathode. The distance between the two was maintained at 3 cm. Anodic polarization test was performed at scan rate of 2 mV/s up to +3.0 V vs open circuit potential in natural seawater. Surface morphology was compared using 3D analysis microscope to observe the damage behavior. As a result, the case of surface modification showed a significantly lower corrosion current density than that without modification, indicating excellent corrosion resistance.

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Fabrication of SOI Structures with Buried Cavities for Microsystems SDB and Electrochemical Etch-stop (SDB와 전기화학적 식각정지에 의한 마이크로 시스템용 매몰 공동을 갖는 SOI 구조의 제조)

  • Chung, Gwiy-Sang;Kang, Kyung-Doo;Choi, Sung-Kyu
    • Journal of Sensor Science and Technology
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    • v.11 no.1
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    • pp.54-59
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    • 2002
  • This paper describes a new process technique for batch process of SOI(Si-on-Insulator) structures with buried cavities for MEMS(Micro Electro Mechanical System) applications by SDB(Si-wafer Direct Bonding) technology and electrochemical etch-stop. A low-cost electrochemical etch-stop method is used to control accurately the thickness of SOI. The cavities were made on the upper handling wafer by Si anisotropic etching. Two wafers are bonded with an intermediate insulating oxide layer. After high-temperature annealing($1000^{\circ}C$, 60 min), the SDB SOI structure with buried cavities was thinned by electrochemical etch-stop. The surface of the fabricated SDB SOI structure have more roughness that of lapping and polishing by mechanical method. This SDB SOI structure with buried cavities will provide a powerful and versatile substrate for novel microsensors arid microactuators.

Effect of Anodizing Current Density on Anti-Corrosion Characteristics for Al2O3 Oxide Film (Al2O3 산화 피막의 내식성에 미치는 양극산화 전류밀도의 영향)

  • Lee, Seung-Jun;Jang, Seok-Gi;Kim, Seong-Jong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.153-153
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    • 2016
  • Aluminum alloys have poor corrosion resistance compared to the pure aluminum due to the additive elements. Thus, anodizing technology artificially generating thick oxide films are widely applied nowadays in order to improve corrosion resistance. Anodizing is one of the surface modification techniques, which is commercially applicable to a large surface at a low price. However, most studies up to now have focused on its commercialization with hardly any research on the assessment and improvement of the physical characteristics of the anodized films. Therefore, this study aims to select the optimum temperature of sulfuric electrolyte to perform excellent corrosion resistance in the harsh marine environment through electrochemical experiment in the sea water upon generating porous films by variating the temperatures of sulfuric electrolyte. To fabricate uniform porous film of 5083 aluminum alloy, we conducted electro-polishing under the 25 V at $5^{\circ}C$ condition for three minutes using mixed solution of ethanol (95 %) and perchloric (70 %) acid with volume ratio of 4:1. Afterward, the first step surface modification was performed using sulfuric acid as an electrolyte where the electrolyte concentration was maintained at 10 vol.% by using a jacketed beaker. For anode, 5083 aluminum alloy with thickness of 5 mm and size of $2cm{\times}2cm$ was used, while platinum electrode was used for cathode. The distance between the two was maintained at 3 cm. Afterward, the irregular oxide film that was created in the first step surface modification was removed. For the second step surface modification process (identical to the step 1), etching was performed using mixture of chromic acid (1.8 wt.%) and phosphoric acid (6 wt.%) at $60^{\circ}C$ temperature for 30 minutes. Anodic polarization test was performed at scan rate of 2 mV/s up to +3.0 V vs open circuit potential in natural seawater. Surface morphology was compared using 3D analysis microscope to observe the damage behavior. As a result, the case of surface modification presented a significantly lower corrosion current density than that without modification, indicating excellent corrosion resistance.

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Planarization technology of thick copper film structure for power supply (전력 소자용 후막 구리 구조물의 평탄화)

  • Joo, Suk-Bae;Jeong, Suk-Hoon;Lee, Hyun-Seop;Kim, Hyoung-Jae;Jeong, Hae-Do
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.523-524
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    • 2007
  • This paper discusses the planarization process of thick copper film structure used for power supply device. Chemical mechanical polishing(CMP) has been used to remove a metal film and obtain a surface planarization which is essential for the semiconductor devices. For the thick metal removal, however, the long process time and other problems such as dishing, delamination and metal layer peeling are being issued, Compared to the traditional CMP process, Electro-chemical mechanical planarization(ECMP) is suggested to solve these problems. The two-step process composed of the ECMP and the conventional CMP is used for this experiment. The first step is the removal of several tens ${\mu}m$ of bulk copper on patterned wafer with ECMP process. The second step is the removal of residual copper layer aimed at a surface planarization. For more objective comparison, the traditional CMP was also performed. As an experimental result, total process time and process defects are extremely reduced by the two-step process.

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A Study on the Residual Stress Evaluation of Autofrettaged SCM440 High Strength Steel (자긴가공된 SCM440 고강도강의 잔류응력평가에 관한 연구)

  • Kim, Jae-Hoon;Shim, Woo-Sung;Yoon, Young-Kwen;Lee, Young-Shin;Cha, Ki-Up;Hong, Suck-Kyun
    • Journal of the Korean Society of Propulsion Engineers
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    • v.14 no.4
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    • pp.39-45
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    • 2010
  • Thick-walled cylinders, such as a cannon or nuclear reactor, are autofrettaged to induce advantageous residual stresses into pressure vessels and to increase operating pressure and the fatigue lifetimes. As the autofrettage level increases, the magnitude of compressive residual stress at the bore also increases. The purpose of the present paper is to predict the accurate residual stress of SCM440 high strength steel using the Kendall model which was adopted by ASME Code. Hydraulic pressure process was applied in the inner part and thick-walled cylinders were autofrettaged up to 30% overstrain levels. Electro polishing on the surface of autofrettage specimen was performed to get more accurate residual stress. Residual stresses were measured by X-ray diffraction method. The autofrettage surface which was plastically deformed analyzed using a scanning electron microscope(SEM). Although there were some differences in measured residual stress and numerical results, it has a tendency to agree comparatively with each other.

Planarization of SUS310 Metal Substrate Used for Coated Conductor Substrate by Chemical Solution Coating Method (화학적인 용액 코팅방법에 의한 박막형 고온초전도체에 사용되는 SUS310 금속모재의 평탄화 연구)

  • Lee, J.B.;Lee, H.J.;Kim, B.J.;Kwon, B.K.;Kim, S.J.;Lee, J.S.;Lee, C.Y.;Moon, S.H.;Lee, H.G.;Hong, G.W.
    • Progress in Superconductivity
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    • v.12 no.2
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    • pp.118-123
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    • 2011
  • The properties of $2^{nd}$ generation high temperature superconducting wire, coated conductor strongly depend on the quality of superconducting oxide layer and property of metal substrate is one of the most important factors affecting the quality of coated conductor. Good mechanical and chemical stability at high temperature are required to maintain the initial integrity during the various process steps required to deposit several layers consisting coated conductor. And substrate need to be nonmagnetic to reduce magnetization loss for ac application. Hastelloy and stainless steel are the most suitable alloys for metal substrate. One of the obstacles in using stainless steel as substrate for coated conductor is its difficulties in making smooth surface inevitable for depositing good IBAD layer. Conventional method involves several steps such as electro polishing, deposition of $Al_2O_3$ and $Y_2O_3$ before IBAD process. Chemical solution deposition method can simplify those steps into one step process having uniformity in large area. In this research, we tried to improve the surface roughness of stainless steel(SUS310). The precursor coating solution was synthesized by using yttrium complex. The viscosity of coating solution and heat treatment condition were optimized for smooth surface. A smooth amorphous $Y_2O_3$ thin film suitable for IBAD process was coated on SUS310 tape. The surface roughness was improved from 40nm to 1.8 nm by 4 coatings. The IBAD-MgO layer deposited on prepared substrate showed good in plane alignment(${\Delta}{\phi}$) of $6.2^{\circ}$.

Development of a Silicon Carbide Large-aperture Optical Telescope for a Satellite (SiC를 이용한 대구경 위성용 망원경 제작)

  • Bae, Jong In;Lee, Haeng Bok;Kim, Jeong Won;Lee, Kyung Mook;Kim, Myung-Whun
    • Korean Journal of Optics and Photonics
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    • v.33 no.2
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    • pp.74-83
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    • 2022
  • The entire process, from the raw material to the final system qualification test, has been developed to fabricate a large-diameter, lightweight reflective-telescope system for a satellite observation. The telescope with 3 anastigmatic mirrors has an aperture of 700 mm and a total mass of 66 kg. We baked a silicon carbide substrate body from a carbon preform using a reaction sintering method, and tested the structural and chemical properties, surface conditions, and crystal structure of the body. We developed the polishing and coating methods considering the mechanical and chemical properties of the silicon carbide (SiC) body, and we utilized a chemical-vapor-deposition method to deposit a dense SiC thin film more than 170 ㎛ thick on the mirror's surface, to preserve a highly reflective surface with excellent optical performance. After we made the SiC mirrors, we measured the wave-front error for various optical fields by assembling and aligning three mirrors and support structures. We conducted major space-environment tests for the components and final assembly by temperature-cycling tests and vibration-shock tests, in accordance with the qualifications for the space and launch environment. We confirmed that the final telescope achieves all of the target performance criteria.