• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1526-1529
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• 2005

Zinc oxide films have been actively investigated as transparent electrode materials for display. We report the effect of the working pressures on electro-optical properties of Al-doped ZnO thin films deposited by d.c. magnetron sputtering. The resistivity of the ZnO thin films was depended on atomic bombardment effect by working pressure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.125-128
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• 1998

The electro-optical properties of PDLCs ( Polymer Dispersed Liquid Crystals ) that have been interested for applications to projection display devices lately are significantly improved. For this improvement, we optimized not only the material parameters of liquid crystal and polymer but also the process conditions. Using TL series liquid crystals and polymer PN393 provided from Merck, we obtained the optimized process conditions such as cell gap, LC concentration, curing temperature and curing time. Under these conditions, we have achieved PDLC cells of threshold voltage 2.6V. contrast ratio 260 and negligible hysteresis.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
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• pp.130-130
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• 1999

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2006년도 ISMP 2006
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• pp.67-73
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• 2006

A system in package (SiP) generally contains a variety of systems such as analog, digital, optical and micro-electro-mechanical systems, integrated in a system-level package connected through a substrate. However, there are many electrical and mechanical reliability issues including the reliability issue for embedded structures. A mismatch of thermal coefficients of expansion among packaging materials and devices can lead to warping or delamination in the package. In this study, the effect of material properties of underfill, such as Young's modulus and CTE, are investigated through FEM simulation. Experimental investigation on the warpage of the package is also carried out to verify the simulation results. The results show that the reliability of the system in package is closely related to the material properties of underfill. The results of this study provide a good guidance for the material selection when designing the system in package.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.22.2-22.2
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• 2011

Reliability and degradation mechanism of conventional phosphor-converted white GaN-based light-emitting diodes (LEDs) were investigated. Under electro-thermal stress condition, the optical output degraded rapidly at the initial stress time accompanied by the change of chromatic properties. This could be attributed to the optical degradation of packaged materials, in particular, the browning of encapsulants and the darkening of reflective packages. At longer stress times, the optical output gradually decreased according to the degree of the reverse leakage currents, namely, the generation ofnonradiative recombination defects. This indicates that the optical degradation of white LEDs are dominated by the darkening of packaged materials and the generation of defects depending on the injection current and ambient temperatures. Using analyses of electroluminescence spectra, optical microscopy, electrical, optical, and thermal properties, optical degradations of white LEDs are discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.316-316
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• 2008

Using an evaporation method, $SiO_2$ was deposited as a buffer layer between a flexible PET substrate and a ITO film deposited by DC magnetron sputtering and electro-optical properties were investigated with thickness variance of $SiO_2$ layers. After coating a $SiO_2$ layer and a ITO film, the ITO/$SiO_2$/PET was heated up to $200^{\circ}C$ and the resistivity and the transmittance were measured by hall effect measurement system and UV/VIS/NIR spectroscopy. As a result of depositing a $SiO_2$ buffer layer, the resistivity increased and the transmittance and adhesion property were enhanced than ITO films with no buffer layers and the resistivity was lowered as $SiO_2$ thickness increased from 50 $\AA$ to 100 $\AA$. It was found that the transmittance was independent of annealing temperature variance in $150^{\circ}C{\sim}200^{\circ}C$ and the resistivity decreased as the temperature increased and especially decreasing rate of the resistivity was higher as the buffer layer thickness was thinner. So under optimized depositing of $SiO_2$ buffer layers and post-annealing of ITO/$SiO_2$/PET, ITO films with enhanced adhesion, electro-optical properties can obtained.

• 한국표면공학회지
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• 제42권1호
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• pp.21-25
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• 2009

Using an evaporation system, $SiO_2$ was deposited as a buffer layer between a PET substrate and a ITO layer and then ITO/$SiO_2$/PET layers were annealed for 1.5 hours at the temperature of $180^{\circ}C$. Adhesion and electro-optical properties of ITO films were studied with thickness variance of a $SiO_2$ buffer layer. As a result of introduction of the $SiO_2$ buffer layer, sheet resistance and resistivity increased and a ITO film with optimum sheet resistance ($529.3{\Omega}/square$) for an upper ITO film of resistive type touch panel could be obtained when $SiO_2$ of $50{\AA}$ was deposited. And it was found that ITO films with $SiO_2$ buffer layer have higher transmittance of $88{\sim}90%$ at 550 nm wavelength than ITO films with no buffer layers and the transmittance was enhanced as $SiO_2$ thickness increased from $50{\AA}$ to $100{\AA}$. Adhesion property of ITO films with $SiO_2$ buffer layers became better than ITO films with no buffer layers and this property was independent of $SiO_2$ thickness variance ($50{\sim}100{\AA}$). By depositing a $SiO_2$ buffer layer of $50{\AA}$ on the PET substrate and sputtering a ITO thin film on the layer, a ITO film with enhanced adhesion, electro-optical properties could be obtained.

• 한국기계가공학회지
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• 제18권2호
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• pp.91-95
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• 2019

A new experimental approach is proposed to detect a specific polymer dissolved in a liquid. Distinctive optical properties were found using a laser scattering technique when there is a polymer compound with almost no difference in optical properties (index of refraction) in a liquid phase. The index of refraction, which determines the refraction of light, is obtained by dissolving PCL and PLA. The used samples are biodegradable materials with similar properties and dissolved in a mixture of Chloroform 7: Methanol 3. To predict the optical properties, a 632-nm diode laser was used as the light source of the device, and an integrating sphere was used as the light receiver. Although PCL and PLA had a similar index of refraction of 1.46-1.48, the dissolved PCL showed a relative transmittance of 43%, and the dissolved PLA had a relative transmittance of 34%. The difference in optical properties of the pure polymer compound in the solid state or liquid state is not significantly different, and the difference in the dissolved state in the specific solvent is remarkable because the solubility differs in a specific solution and is randomly distributed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1077-1079
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• 2008

Nanoparticles-induced vertical alignment (NIVA) in the liquid crystal (LC) devices was observed and has been applied successfully on fabricating the hybrid-aligned nematic LC cells and guest-host LC cells. In this talk, we will discuss the characteristics of the electric and optical properties of NIVA-LC cells with different dopant concentrations and demonstrate that nanoparticles can be spin-coated on the substrate at a low temperature.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 하계학술발표회
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• pp.34-35
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• 2000

A Y-branch phase modulator made of an electro-optic(EO) polymer has been designed and fabricated. An EO polymer, PMMA-DR1, is used for the core layer, and UV-curable polymers, UV-15 and UV-15 LV, for the cladding layers. The rib type polymeric waveguides are fabricated by the reactive ion etching method and their EO effects are obtained by the poling process. The optical properties of the fabricated phase modulator are as follows: the halfwave voltage, $V_{\pi}$, is 25 V, the insertion loss of TM mode is 13.8 dB, and the intensity modulation is 0.17 % (V).