• 제목/요약/키워드: Electro-optical properties

검색결과 239건 처리시간 0.025초

PVK 유기 EL에서 Stibenequinone 유도체의 광학적 특성 (Optical properties of Stibenequinone derivatives in PVK organic electroluminescence)

  • 조종래;유정이;양종헌;신상식;손세모;정수태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.1047-1049
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    • 2003
  • Stibenequinone(SQ) derivative which was electronic transportation materials in Poly(N-vinylcarbazole) (PVK)-based on organic EL and an optical characteristic of organic EL which is mentioned previously was investigated. The Photoluminescence highest pick with blending TBSQ with PVK was shifted from 439nm to 517nm. This result indicates that an energy gap of a PVK/TBSQ blended sample is less than an energy gap of PVK. According to the electrochemistry characteristic, the ionization energy(Ip) and the electro affinity(Ea) decreased from 5.79eV to 5.63eV and 2.23eV to 2.63eV, respectively.

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쇼트키 장벽 트랜지스터의 빛 조사에 따른 전기적 특성 연구 (Electric characteristics of Schottky barrier Field Effect Transistors with Halogen and Deuterium lamp)

  • 황민영;구상모
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.348-348
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    • 2010
  • Nanostructures have great potential in various devices due to the their promising electronic and optical properties. Nano-patterned the front surface of a solar cell generally results in improved performance, mostly due to an increase in the short-circuit current by the incident photons strike the cell surface at an angle. In this work, we investigate AFM-assisted nano-patterned field effect transistors (FETs) with vairous silicon oxide distance value D, from ${\sim}0.5{\mu}m$ to $1{\mu}m$. Also, we compared the electro-optical characteristics of the patterned FETs and the non-patterned FETs (reference device) based on both 2-dimensional simulation and experimental results for the wavelength from 100nm to 900nm. In addition, we report electric characteristics for illuminated surface in schottky barrier field effect transistors (SB-FETs).

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전기적 스위칭이 가능한 고분자 분산형 액정 제작 및 동적 홀로그램 기록 특성 (Electrically controllable polymer-dispersed liquid crystal)

  • 성기영;경천수;이영락;최병철;곽종훈;최옥식;이윤우
    • 한국광학회지
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    • 제10권6호
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    • pp.494-499
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    • 1999
  • 전기적으로 굴절율 변조값을 조절할 수 있는 부피형 홀로그램 매질(HPDLC)을 제작하였다. HPDLC는 4가 acrylate monomer를 기초로 한 전폴리머(prepolymer)와 액정 혼합물 E7 등으로 구성되어져 있다. 제작된 매질의 광학적 특성을 조사하기 위해 액정 농도, 전기장의 세기에 따른 회전효율을 측정하고, 홀로그래피 방법으로 상을 기록한 후 재생된 상을 전기적으로 조절할 수 있음을 보였다.

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PVC/Nematic 액정복합막의 전기광학특성 (Electro-optical Properties of PVC/Nematic Liquid Crytal Composite Films)

  • 이종철;김병규
    • 한국재료학회지
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    • 제3권4호
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    • pp.388-394
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    • 1993
  • PVC/액정 복합막의 응집상태 및 전기광학 특성을 넓은 막조성(30-70wt% LC)에 걸쳐 조사하였다. 또한 optical contrast가 가장 좋은 40/60(PVC/LC)중량조성으로 된 복합막에 대해서는 온도 및 외부교류전계의 주파수 및 전압응답을 측정한 결과 문턱 주파수는 20$V_{p-p}$ 이하(1 kHz, $25^{\circ}C$), rise time및 decay time은 모두 10ms 이하(V$100 _{p-p}$ , 1 kHz, $25^{\circ}C$)였다.

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Near-field Characterization on Light Emanated from Subwavelength Plasmonic Double Slit of Finite Length

  • Kim, Ki-Young;Goncharenko, Anatoliy V.;Hong, Jian-Shiung;Chen, Kuan-Ren
    • Journal of the Optical Society of Korea
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    • 제15권2호
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    • pp.196-201
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    • 2011
  • Near-field properties of light emanated from a subwavelength double slit of finite length in a thin metal film, which is essential for understanding fundamental physical mechanisms for near-field optical beam manipulations and various potential nanophotonic device applications, is investigated by using a three-dimensional finite-difference time-domain method. Near-field intensity distribution along the propagation direction of light after passing through the slit has been obtained from the phase relation of transverse electric and magnetic fields and the wave impedance. It is found that the near field of emerged light from the both slits is evanescent, that is consistent with conventional surface plasmon localization near the metal surface. Due to the finite of the slit, the amplitude of this evanescent field does not monotonically approach to than of the infinite slit as the slit length increases, i.e. the near-field of the longer slit along the center line can be weaker than that of the shorter one.

고분자 / 액정 복합막의 Guest-Host효과 (The Guest-Host Effect of the Polymer / Liquid Crystal Composite Films)

  • 박관선;최성부;정노희;남기대;카지야마
    • 한국응용과학기술학회지
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    • 제13권2호
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    • pp.29-37
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    • 1996
  • The phase separated structure and the electo-optical properties of the polymer /liquid crystal(LC) composite films including a dye were investigated. The phase separated structure of the polymer /LC / dye composite film(GH composite film) including below 2wt% dye against LC was almost same with the composite film which does not include dye. But the electro-optical properties of the GH composite film strongly depended on weight fraction of the dye against the LC. The response time of the GH composite film increased with the increase of the dissolved dye in LC because the dye acts as a registivity for the orientation of LC molecules by the electric filed.

P3HT를 이용한 다층막 전계발광 소자의 전기-광학적 특성 (The Electro-optical Properties of Multilayer EL Devices with P3HT as Emitting layer)

  • 김대중;김주승;김정호;구할본
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.1018-1021
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    • 2003
  • We have synthesized poly(3-hexylthiophene) and studied the optical properties of P3HT for applying to the red emitting materials of organic electroluminescent device. Usually, an organic EL device is composed of single layer like anode/emitting layer/cathode, but additional layer such as hole transport, electron transport and buffer layer is deposited to improve device efficiency. In this study, Multilayer EL devices were fabricated using tris(8-hydroxyquinolinate) aluminum($Alq_3$) as electron transport material, (N,N'-diphenyl-N,,N'(3-methylphenyl)-1,1'-biphenyl-4,4'diamine))(TPD) as hole transport/electron blocking materials and LiF as buffer layer. That is, a device structure of ITO/blending layer(TPD+P3HT)/$Alq_3$/LiF/Al was employed. In the Multilayer device, the luminance of $10{\mu}W/cm^2$ obtained at 10V. And, we present the experimental evidence of the enhancement of the Foster energy transfer interaction in emitting layer.

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측면 연마된 단일모드 광섬유와 열 광학 다중모드 평면도파로를 이용한 능동형 광 결합기 (Active optical coupler using the side polished single mode fiber and thermo-optic polymer multimode planar waveguide)

  • 김광택;유호종;김성국;이소영;송재원;이상재;김시홍;강신원
    • 한국광학회지
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    • 제10권3호
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    • pp.248-253
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    • 1999
  • 본 논문에서는 측면이 연마된 단일모드 광섬유와 폴리머 다중 평면도파로가 결합했을 때 발생하는 모드 결합현상을 이용한 능동형 광결합기를 연구하였다. 제안된 소자는 파장가변 광필터나 광변조기로 이용할 수 있을 뿐만 아니라, 광도파로 물질의 굴절률, 복굴절, 전기광학 계수, 열광학 계수 등을 측정하는 도구로 응용할 수 있다. BPM으로 최적화된 결합기를 설계하였고, 열광학 폴리머를 능동 평면 도파로층으로 이용하여 결합기를 제작하였다. 제작된 소자는 -0.5dB 이하 손실, 공진파장 -13dB 소멸비. 그리고 열광학 효과에 의해 -1.5nm/$^{\circ}C$ 정도의 파장 가변성을 보였다. 본 연구의 결과로 볼 때 열광학 능동형 광결합기는 광변조기, 파장가변 광필터, 광센서 등으로 이용될 가능성이 높다.

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고분자 반응을 이용한 Maleic anhydride계 비선형 광학 고분자의 합성 및 전기광학 특성 (Synthesis and Properties of Nonlinear Optical Polymer Derived from α-Methyl Styrene/Maleic Anhydride by Polymer Reaction)

  • 박이순;금창대;송재원;김광택;김기현;강신원
    • 공업화학
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    • 제9권5호
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    • pp.704-709
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    • 1998
  • ${\alpha}$-Methyl styrene과 maleic anhydride를 공단량체로 사용하여 유리전이온도가 높고 내열성이 우수한 poly (${\alpha}$-methylstyrene-co-maleic anhydride) (MSMA) 기재 고분자 (substrate polymer)를 합성하고 여기에 니트로기를 가진 발색단을 고분자반응을 이용하여 도입하는 반응 및 생성된 비선형 광학 고분자의 전기 광학 특성에 대해 조사하였다. MSMA 기재 고분자에 hydroxyl기를 가지는 azo계 발색단 (chromophore) 2-[4-(4-nitrophenylazo)-N-ethylphenylamino]ethanol (DR1)을 고분자 반응 (polymer reaction)으로 maleic anhydride에 ester 결합으로 도입할 때 4-dimethylaminopyridine (DMAP) 촉매만을 쓴 것 (MSMA-D)보다 DMAP와 3-dicyclohexyl carbodiimid (DCC)를 동시에 사용한 경우 (MSMA-DC)가 DR1 발색단의 도입율이 높게 나타났다. 비선형 광학 고분자 (MSMA-DC)의 전기광학계수 ($r_{33}$)는 파장이 632.8 nm인 광원에서 18 pm/V의 값을 나타냈으며 열적 안정성도 유리전이 온도 ($T_g$)가 $175^{\circ}C$ 이상으로 우수하게 나타났다.

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RF 출력이 ZnO 박막의 전기·광학적 특성에 미치는 영향 (Effect of RF Powers on the Electro·optical Properties of ZnO Thin-Films)

  • 신동휘;변창섭;김선태
    • 한국재료학회지
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    • 제22권10호
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    • pp.508-512
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    • 2012
  • ZnO thin films were grown on a sapphire substrate by RF magnetron sputtering. The characteristics of the thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL), and Hall effect. The substrate temperature and growth time were kept constant at $200^{\circ}C$ at 30 minutes, respectively. The RF power was varied within the range of 200 to 500 W. ZnO thin films on sapphire substrate were grown with a preferred C-axis orientation along the (0002) plan; X-ray diffraction peak shifted to low angles and PL emission peak was red-shifted with increasing RF power. In addition, the electrical characteristics of the carrier density and mobility decreased and the resistivity increased. In the electrical and optical properties of ZnO thin films under variation of RF power, the crystallinity improved and the roughness increased with increasing RF power due to decreased oxygen vacancies and the presence of excess zinc above the optimal range of RF power. Consequently, the crystallinity of the ZnO thin films grown on sapphire substrate was improved with RF sputtering power; however, excess Zn resulted because of the structural, electrical, and optical properties of the ZnO thin films. Thus, excess RF power will act as a factor that degrades the device characteristics.