• Title/Summary/Keyword: Electro-optical effect

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A Study on Adhesion and Electro-optical Properties of ITO Films deposited on Flexible PET Substrates with $SiO_2$ Buffer Layer (PET 기판 위해 $SiO_2$ 버퍼층 도입에 따른 IT 박막의 접착 및 전기적.광학적 특성 연구)

  • Kang, Ja-Youn;Kim, Dong-Won;Yun, Hwan-Jun;Park, Kwang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.316-316
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    • 2008
  • Using an evaporation method, $SiO_2$ was deposited as a buffer layer between a flexible PET substrate and a ITO film deposited by DC magnetron sputtering and electro-optical properties were investigated with thickness variance of $SiO_2$ layers. After coating a $SiO_2$ layer and a ITO film, the ITO/$SiO_2$/PET was heated up to $200^{\circ}C$ and the resistivity and the transmittance were measured by hall effect measurement system and UV/VIS/NIR spectroscopy. As a result of depositing a $SiO_2$ buffer layer, the resistivity increased and the transmittance and adhesion property were enhanced than ITO films with no buffer layers and the resistivity was lowered as $SiO_2$ thickness increased from 50 $\AA$ to 100 $\AA$. It was found that the transmittance was independent of annealing temperature variance in $150^{\circ}C{\sim}200^{\circ}C$ and the resistivity decreased as the temperature increased and especially decreasing rate of the resistivity was higher as the buffer layer thickness was thinner. So under optimized depositing of $SiO_2$ buffer layers and post-annealing of ITO/$SiO_2$/PET, ITO films with enhanced adhesion, electro-optical properties can obtained.

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Electro-optical properties of organic thin film EL device using PPV (PPV를 이용한 유기 박막 EL 소자의 전기-광학적특성)

  • Kim, Min-Soo;Park, Lee-Soon;Park, Se-Kwang
    • Journal of Sensor Science and Technology
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    • v.7 no.2
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    • pp.97-102
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    • 1998
  • Organic thin film EL devices using PPV(poly (p-phenylenevinylene)) as emitter were fabricated on various conditions and structures, their electro-optical properties were estimated. Fabricated EL devices had structures of single layer(ITO(indium tin oxide)/PPV/Mg), double layer(ITO/PVK(poly(N-vinylcarbazole))/PPV/Mg and ITO/PPV/Polymer matrix + PBD/Mg) and three layer (ITO/PVK/PPV/PS(polystyrene)+PBD(butyl-2-(4-bipheny])-5-(4-tert-butylphenyl-1,3,4-oxadiazole))/Mg), their electro-optical characteristics were compared with each other. In structure of double layer (ITO/PPV /Polymer matrix + PBD/Mg), the used polymer-matrices were PMMA(poly(methyl methacrylate), PC(polycarbonate), PS and MCH(side chain liquid crystalline homopolymer). When PS as a hole transport layer was used, the luminance characteristics on concentration of PBD was obtained. In results, current-voltage-luminance curves of fabricated devices had characteristics of tunneling effect and the device showed a stable light emitting.

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Liquid Crystal Alignment Effect and Electro-Optical Characteristics of TN-LCD on a-C:H Thin Films (a-C:H 박막을 이용한 액정 배향 효과 및 TN-LCD 의 전기광학 특성)

  • Hwang, Jeong-Yeon;Jo, Yong-Min;Rho, Soon-Jun;Baik, Hong-Koo;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.124-127
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    • 2002
  • LC aligning capabilities and the variation of pretilt angles with ion beam irradiation on the a-C:H thin films, and electro-optical (EO) performances of the ion beam aligned twisted nematic (TN)-liquid crystal display (LCD) with oblique ion beam exposure on the a-C:H thin film were studied. A high pretilt angle of $3.5{^{\circ}}$ via ion beam irradiation on the a-C:H thin film was measured. Also, the LC pretilt angle decreased due to the increase in surface roughness at over 2 min of IB exposure time. It is considered that this roughness increase due to increasing IB exposure time that generated destroy of oriented rings of atoms related to LC alignment. An excellent voltage-transmittance (V-T) curve of the ion beam aligned TN-LCD was observed with oblique ion beam exposure on the a-C:H thin film for 1 min. Also, a faster response time for the ion beam aligned TN-LCD with oblique ion beam exposure on the a-C:H thin film for 1 min can be achieved. Finally, the residual DC property of the ion beam aligned TN-LCD with ion beam exposure of 1 min on the a-C:H thin film is almost same as that of the rubbing aligned TN-LCD on a PI surface.

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Fabrication of High Speed Optical Matrix Wwitch by Ti:Ti:LiNbO3 (Ti:Ti:LiNbO3를 이용한 초고속 광 매트릭스 스위치 제조)

  • Yang, U-Seok;Kwak, Yong-Seok;Kim, Je-Min;Yoon, Hyeong-Do;Lee, Han-Yeong;Yoon, Dae-Ho
    • Korean Journal of Materials Research
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    • v.12 no.4
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    • pp.254-258
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    • 2002
  • To realize channel cross-connecting in optical communications systems, a high speed optical matrix switch was fabricated using z-cut $LiNbO_3$. For switch fabrication was design bending structure and coupling length and four $2{\times}2$ directional couplers were integrated on one substrate far construction of a $4{\times}4$ switch. Single-mode optical waveguides were formed by Ti-diffusion at a wet $O_2$ atmosphere. Ti-diffusion profile, refractive index variation and waveguide morphology were analyzed by Prism coupler and optical microscopy, respectively.

GaAs/AlGaAs MQW waveguide phase modulator with optical bistability (광쌍안정을 갖는 GaAs/AlGaAs MQW 도파로형 위상 광변조기)

    • Korean Journal of Optics and Photonics
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    • v.7 no.3
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    • pp.280-286
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    • 1996
  • This paper describes operation mechanism of a novel optical waveguide phase modulator with optical bistability characteristics by self electro-optic effect. The fabricated device structure is an optical waveguide modulator, using a refractive index change by an applied electric field, parallel integrated with SEED with an electrical bistability. GaAs/AlGaAs MQW is used as the core layer of the waveguide modulator and the absorption layer of SEED. The absorbed optical power in SEED changes the diode voltage and controls the optical power propagating through the waveguide phase modulator. Optical bistability of waveguide phase modulator is experimentally obtained by using electrical bistability of SEED. Compared to other waveguide modulators, the proposed one has an asset that the lowest optical power is required to generate optical bistability.

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Non-linear Optical Properties of the Langmuir-Blodgett Films Measured by the Differential Attenuated Total Reflection Method (미분 변조 전반사 감쇠법에 의해 측정된 Langmuir-Blodgett 박막의 비선형 광학적 성질)

  • 정미윤
    • Proceedings of the Optical Society of Korea Conference
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    • 1991.06a
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    • pp.94-97
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    • 1991
  • We have deposited the three kinds of the Langmuir-Blodgett films (Phenylhy drazone, O-stilbazene, N-stilbazene) which have optically nonlinear effect. To study the electro-optic characteristics of these LB films, we performed the differential attenuated total reflection experiment in which the optical properties of the LB films modulated by the electric field(νE = 1KHz). The surface non-linear susceptibilities $\chi$(2) of these LB films obtained, are 1.17$\times$10-10 (m/V), 36.3$\times$10-10 (m/V), and 1.62$\times$10-10 (m/V) for Phenylhydrazone, O-stilbazene, and N-stilbazene, respectively.

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A Study on the Fabriation of Mode Convertible Optical Filter Utilizing Strain-optic Effect in LiNbO$_{3}$ (LiNbO$_{3}$의 스트레인광학 효과를 이용한 모드변환형 광여파기 제작에 관한 연구)

  • 박석봉;장홍식
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.1
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    • pp.72-78
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    • 1998
  • Polarization mode converters have been produced by utilizing Ti:LiNbO$_{3}$ channel waveguide and strain-optic effect. Shear strain for periodic perturbations of optical channel waveguides and phase matching can be obtained by an evaporated periodic SiO$_{2}$ thin film at 300.deg. C. The electrodes located on the either side of waveguide provide a means to electro-optically tune the wavelength for maximum polarization conversion via the electrooptic effect. The maximum conversion effeciency was observed at 21.deg. C for V=0 and 46.deg. C for V=30V aro the device having 7 .mu.m waveguide wiith and 350 periodic pads. The dependence of the number of pads on conversion efficiency was observed experimentally.fficiency was observed experimentally.

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Electric characteristics of Schottky barrier Field Effect Transistors with Halogen and Deuterium lamp (쇼트키 장벽 트랜지스터의 빛 조사에 따른 전기적 특성 연구)

  • Hwang, Min-Young;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.348-348
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    • 2010
  • Nanostructures have great potential in various devices due to the their promising electronic and optical properties. Nano-patterned the front surface of a solar cell generally results in improved performance, mostly due to an increase in the short-circuit current by the incident photons strike the cell surface at an angle. In this work, we investigate AFM-assisted nano-patterned field effect transistors (FETs) with vairous silicon oxide distance value D, from ${\sim}0.5{\mu}m$ to $1{\mu}m$. Also, we compared the electro-optical characteristics of the patterned FETs and the non-patterned FETs (reference device) based on both 2-dimensional simulation and experimental results for the wavelength from 100nm to 900nm. In addition, we report electric characteristics for illuminated surface in schottky barrier field effect transistors (SB-FETs).

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EO Characteristics in the Vertical Alignment (VA)-$\pi$ mode LCD Using the Tilt Angle Decrease Effect on the Blended Polymer (혼합된 polymer에서의 틸트 감소 효과를 이용한 VA-$\pi$ mode LCD의 전기광학 특성)

  • Lee, Kyung-Jun;Hwang, Jeoung-Yeon;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05d
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    • pp.53-56
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    • 2003
  • Blending effects for generating a pretilt angle in nematic liquid crystal (NLC) with negative dielectric anisotropy on the blended polyimide (PI) of homeotropic and homogeneous alignment surface were studied. Also, we investigated the EO performances for the advanced VA-$\pi$ cell using this homeotropic blended PI surface. A many decrease of tilt angle on the polymer surface to blend homeotropic PI and homogeneous PI with side chain type was measured, and the tilt angle decreased as blended ratio and rubbing strength increase. The blended effects for generating a pretilt angle were clearly observed, and the many decrease of tilt angle can be achieved by using the blended PI surface. The electro-optical (EO) characteristics using the advanced VA-$\pi$ cell using the homeotropic blended PI surface than that of conventional VA cell can be improved. We suggest that the developed advanced VA-$\pi$ cell on a homeotropic blended PI surface is a promising technique for the achievement of a fast response time, and a high contrast ratio.

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Electro-optical Characteristics of VA mode LCOS depending on Cell Gap (VA Mode의 LCOS에서 Cell Gap의 변화에 따른 전기광학적 특성)

  • Kang, Jung-Won;Son, Hong-Bae
    • Journal of the Semiconductor & Display Technology
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    • v.7 no.3
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    • pp.41-43
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    • 2008
  • The electro-optical characteristics of the Liquid Crystal on Silicon (hereinafter "LCOS") micro-display on vertically alignment (VA) mode were studied depending on various cell gaps. 5 different cell gaps, such as $1.4{\mu}m,\;1.8{\mu}m,\;2.1{\mu}m,\;2.4{\mu}m$ and $2.8{\mu}m$, were selected. The reflectance-voltage (R-V) characteristics, distributions of reflected light and reflectance were calculated with 3-dimmensional LC code. At the center of cell, the smallest $1.4{\mu}m$ cell gap showed the lowest reflectance and the largest $2.8{\mu}m$ cell gap showed the highest reflectance due to the surface anchoring effect. In case of $2.1{\mu}m$ cell gap, the sum of reflectance overall cell was the highest value. Considering the reflectance and RV curve characteristic, the optimized cell gap was $2.1{\mu}m$.

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