• Title/Summary/Keyword: Electro-optical devices

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The improvement of the sidewall roughness of the crystalline silicon for optical MEMS devices (광 MEMS소자 용 결정질 실리콘의 측면 거칠기 개선)

  • Yoon, Sung-Sik;Kwon, Ho-Nam;Yang, Sung;Kim, Won-Hyo;Kim, Young-Yoon;Jeon, Byung-Hee;Lee, Jong-Hyun
    • Proceedings of the Optical Society of Korea Conference
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    • 2002.07a
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    • pp.256-257
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    • 2002
  • 최근 광 스위치, 광학 가변 필터와 같은 광통신용 수동 소자를 구현하기 위해 실리콘 마이크로머시닝 기술을 바탕으로 한 광 MEMS(micro electro mechanical system) 기술이 각광을 받고 있다[1,2]. 특히, 실리콘 기판을 수직 식각하여 제작한 측면 저울은 2$\times$2광 스위치나 광 필터 등에서 반사 평면이나 투과평면으로 많이 이용되고 있다. 광학 평면의 거칠기 특성은 빛의 산란에 의한 광학 손실이나 평행 광 특성 유지 등과 밀접한 관계가 있다. (중략)

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Detection System for Sub-micrometer Defects of a Photo-mask Using On-axis Interference between Reflected and Scattered Lights

  • Lee, Sangon;Jo, Jae Heung;Kim, Jong Soo;Moon, Il Kweon
    • Journal of the Optical Society of Korea
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    • v.17 no.1
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    • pp.73-80
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    • 2013
  • In the process of lithography using ultra violet light sources for semiconductor devices, most of defects are made by sub-micrometer pollutants generated at photochemical reactions. We proposed and developed a novel vibration-insensitive on-axis interferometer with a sub-micrometer lateral resolution by using the interference between two beams: one scattered from defects and the other reflected from a reference area without defects. The proposed system was successfully demonstrated to detect a small Al defect of 0.5 ${\mu}m$ diameter within the inspection time of less than 30 minutes over the area of the photo-mask which is 6 inch by 6 inch square.

LiNbO3 integrated optic devices with an UV-curable polymer buffer layer

  • Jeong, Woon-Jo;Kim, Seong-Ku;Park, Gye-Choon;Lee, Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05b
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    • pp.111-118
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    • 2002
  • A new lithium niobate optical modulator with a polymer buffer layer on Ni in-diffused optical waveguide is proposed for the fist time, successfully fabricated and examined at a wavelength of 1.3 mm. By determining the diffusion parameters of Ni in-diffused waveguide to achieve more desirable mode size which is well matched to the mode in the fiber, the detailed results on the achievement of high optical throughput are reported. In addition, the usefulness of polymer buffer layer which can be applicable to a buffer layer in Ni in-diffused waveguide devices is demonstrated. Several sets of channel waveguides fabricated on Z-cut lithium niobate by Ni in-diffusion were obtained and on which coplanar traveling-wave type electrodes with a polymer-employed buffer layer were developed by a conventional fabrication method for characterizing of electro-optical performances of the proposed device. The experimental results show that the measured half-wave voltage is of ~10 V and the total measured fiber-to-fiber insertion loss is of ~6.4 dB for a 40 mm long at a wavelength of =1.3 mm, respectively. From the experimental results, it is confirmed that the polymer-employed buffer layer in LiNbO3 optical modulator can be a substitute material instead of silicon oxide layer which is usually processed at a high temperature of over $300^{\circ}C$. Moreover, the fabrication tolerances by using polymer materials in LiNbO3 optical modulators are much less strict in comparison to the case of dielectric buffer layer.

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A Study on Ti:LiNbO3 Integrated Optical Wavelength Tunable Polarization Mode Controllers (Ti:LiNbO3 집적광학형 파장가변 편광모드 조절기에 관한 연구)

  • Moon, Je-Young;Jung, Hong-Sik
    • Korean Journal of Optics and Photonics
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    • v.16 no.4
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    • pp.376-383
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    • 2005
  • We designed and fabricated integrated-optic tunable polarization controllers based on $LiNbO_3$ with the Ti-indiffused waveguide along the y-axis utilizing the electro-optic effect. The device consists of $TE↔TM$ mode converters and TE/TM phase shifters. We analyzed the operation principles of each device utilizing transfer matrices based on a Jones matrix and simulated shifting of the center wavelength by inducing voltage. We confirmed experimentally that the fabricated devices control the tunability of the center wavelength and the input SOP.

The properties of AlGaN epi layer grown by HVPE (HVPE에 의해 성장된 AlGaN epi layer의 특성)

  • Jung, Se-Gyo;Jeon, Hun-Soo;Lee, Gang-Seok;Bae, Seon-Min;Yun, Wi-Il;Kim, Kyoung-Hwa;Yi, Sam-Nyung;Yang, Min;Ahn, Hyung-Soo;Kim, Suck-Whan;Yu, Young-Moon;Cheon, Seong-Hak;Ha, Hong-Ju
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.1
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    • pp.11-14
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    • 2012
  • The AlGaN layer has direct wide bandgaps ranging from 3.4 to 6.2 eV. Nowadays, it is becoming more important to fabricate optical devices in an UV region for the many applications. The high quality AlGaN layer is necessary to establish the UV optical devices. However, the growth of AlGaN layer on GaN layer is difficult due to the lattice mismatch and difference thermal expansion coefficient between GaN layer and AlGaN layer. In this paper, we attempted to grow the LED structure on GaN template by mixed-source HVPE method with multi-sliding boat system. We tried to find the optical and lattice transition of active layer by control the Al content in mixed-source. For the growth of epi layer, the HCl and $NH_3$ gas were flowed over the mixed-source and the carrier gas was $N_2$. The temperature of source zone and growth zone was stabled at 900 and $1090^{\circ}C$, respectively. After the growth, we performed the x-ray diffraction (XRD) and electro luminescence (EL) measurement.

Packaging MEMS, The Great Challenge of the $21^{st}$ Century

  • Bauer, Charles-E.
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2000.04a
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    • pp.29-33
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    • 2000
  • MEMS, Micro Electro-Mechanical Systems, present one of the greatest advanced packaging challenges of the next decade. Historically hybrid technology, generally thick film, provided sensors and actuators while integrated circuit technologies provided the microelectronics for interpretation and control of the sensor input and actuator output. Brought together in MEMS these technical fields create new opportunities for miniaturization and performance. Integrated circuit processing technologies combined with hybrid design systems yield innovative sensors and actuators for a variety of applications from single crystal silicon wafers. MEMS packages, far more simple in principle than today's electronic packages, provide only physical protection to the devices they house. However, they cannot interfere with the function of the devices and often must actually facilitate the performance of the device. For example, a pressure transducer may need to be open to atmospheric pressure on one side of the detector yet protected from contamination and blockage. Similarly, an optical device requires protection from contamination without optical attenuation or distortion being introduced. Despite impediments such as package standardization and complexity, MEMS markets expect to double by 2003 to more than $9 billion, largely driven by micro-fluidic applications in the medical arena. Like the semiconductor industry before it. MEMS present many diverse demands on the advanced packaging engineering community. With focused effort, particularly on standards and packaging process efficiency. MEMS may offer the greatest opportunity for technical advancement as well as profitability in advanced packaging in the first decade of the 21st century! This paper explores MEMS packaging opportunities and reviews specific technical challenges to be met.

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Fabrication of a Liquid Crystal Cell Using ITO-deposited Polarizers as Substrates (ITO 박막이 증착된 편광판을 기판으로 하는 액정 셀의 제작)

  • Jin, Hye-Jung;Kim, Ki-Han;Park, Kyoung-Ho;Son, Phil-Kook;Kim, Jae-Chang;Yoon, Tae-Hoon
    • Korean Journal of Optics and Photonics
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    • v.22 no.2
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    • pp.90-95
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    • 2011
  • We propose a super-thin and light-weight liquid crystal cell, in which glass substrates are eliminated and polarizers are used as substrates. We fabricate a polarizer substrate by depositing a-SiOX as a buffer layer, indium-tin-oxide as a transparent conducting layer, and a-SiOX as an alignment layer on a polarizer sequentially at a low temperature. We use the ion-beam method to align liquid crystals on polarizer substrates.

Luminescent Characteristics of ZnS:Mn,Cu Yellow Phosphors for White Light Emitting Diodes (백색 LED용 ZnS:Mn,Cu 황색형광체의 발광특성)

  • Yu, Il;Lee, Ji-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.8
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    • pp.627-631
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    • 2010
  • ZnS:Mn yellow phosphors doped with Cu for white light emitting diodes were synthesized by solid state reaction method. The optical properties and structures of ZnS:Mn,Cu phosphors were investigated by x-ray diffraction, photoluminescence, and scanning electro microscopy. Photoluminescence excitation spectra originated from $Mn^{2+}$ were ranged from 450 nm to 500 nm. The yellow emission at around 580 nm was associated with $^4T_1{\rightarrow}^6A_1$ transition of $Mn^{2+}$ ions in ZnS:Mn,Cu phosphors. The highest photoluminescence intensity of the phosphors under 405 nm excitation was obtained at Cu concentration of 0.02 mol%. The enhanced photoluminescent intensity in the ZnS:Mn,Cu phosphors was interpreted by energy transfer from Cu to Mn.

Electroluminescence Properties from Blend films of poly(3-hexylthiophene) and poly(N-vinylcarvazole) (P3HT와 PVK 블렌드 막에서의 전계 발광 특성)

  • Kim, Dae-Jung;Kim, Shang-Gi;Gu, Hal-Bon;Jung, Un-Jo;Park, Ge-Chun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.972-975
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    • 2002
  • Electroluminescence(EL) devices based on organic thin layers have attracted lot of interests because of their application as display. One of the problems is red material. It offered a short life and poor emission efficiency to boot. In this study, this problem can be solved by using a multi-layer device structure. Organic electroluminescent devices which are composed of organic thin multi-layer films are fabricated. The basic structure is ITO / Emitting layer / LiP / Al EL device in which Hole transport/Electron blocking PVK layer was blending. We demonstrate the enhancement of eletroluminescence (EL) from blends of poly(3-hexylthiophene) in poly(N-vinylcarvazole). The emitting layer is consisted of a host material(PVK) and a guest emitting material(P3HT). It was showed higher EL intensity and their electro-optical properties were investigated.

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Flexible Display ; Low Temperature Processes for Plastic LCDs

  • Han, Jeong-In
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.185-189
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    • 2002
  • Flexible displays such as plastic based LCDs and organic light-emitting diodes for mobile communication devices have been researched and developed at KETI in KOREA since 1997. The Plastic film substrate has so poor thermal tolerance and non-rigidness that the fabrication of active devices and panel assembly have to perform at low temperature and pressure. In addition, high thermal expansion of the substrate is also a serious problem for reliable metallic film deposition. In this paper, we investigated particularly on the fundamental characteristics of various plastic substrates and then, suggested novel methods that improve the fabrication processes of plastic LCD panel. In order to maintain stable substrate surface and uniform cell gap during panel assembly, we utilized newly-invented iii and vacuum chuck. Electro-optical characteristics of fabricated plastic LCD are better than or equivalent to those of typical glass based LCDs though it is thinner, lighter-weight and more robust.

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