• Title/Summary/Keyword: Electro-Optic Modulator

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Design and Manufacture of Traveling-wave Electro-optic Modulator for X-band LFM Signal Generation (X-대역 LFM 신호생성을 위한 진행파형 전광변조기의 설계 및 제작)

  • Yi, Minwoo;Yoo, Sungjun;Bae, Youngseok;Jang, Sunghoon;Ryoo, Joonhyung;Shin, Jinwoo
    • Journal of the Korea Institute of Military Science and Technology
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    • v.24 no.6
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    • pp.610-618
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    • 2021
  • In this paper, a photonic-based microwave system technology is described, and a traveling-wave electro-optic modulator is designed and manufactured as a key component. The fabricated modulator is composed of a metal diffusion waveguide for optical transmission and a planar waveguide electrode on lithium niobate substrate for microwave transmission. The electro-optic response bandwidth of I and Q channels in a fabricated dual parallel Mach-Zehnder modulator were measured for 27.67 and 28.11 GHz, respectively. Photonic four times up-converted X-band frequency and linear frequency modulated signal were confirmed using the fabricated electro-optic modulator by S-band input signal. The confirmed broadband signal can be applied to a microwave system for surveillance and high-resolution ISAR imaging.

Heterogeneously Integrated Thin-film Lithium Niobate Electro-optic Modulator Based on Slot Structure

  • Li, Xiaowei;Xu, Yin;Huang, Dongmei;Li, Feng;Zhang, Bo;Dong, Yue;Ni, Yi
    • Current Optics and Photonics
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    • v.6 no.3
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    • pp.323-331
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    • 2022
  • Electro-optic modulator (EOM) takes a vital role in connecting the electric and optical fields. Here, we present a heterogeneously integrated EOM based on the lithium niobate-on-insulator (LNOI) platform. The key modulation waveguide structure is a field-enhanced slot waveguide formed by embedding silicon nanowires in a thin-film lithium niobate (LN), which is different from the previously reported LN ridge or etchless LN waveguides. Based on such slot structure, optical mode field area is reduced and enhanced electric field in the slot region can interact well with LN material with high Electro-optic (EO) coefficient. Therefore, the improvements in both aspects have positive effects on enhancing the modulation performance. From results, the corresponding EOM by adding such modulation waveguide structure achieves better performance, where the key half-wave-voltage-length product (V𝜋L) and 3 dB EO bandwidth are 1.78 V·cm and 40 GHz under the electrode gap width of only 6 ㎛, respectively. Moreover, Lower V𝜋L can also be achieved. With these characteristics, such field-enhanced waveguide structure could further promote the development of LNOI-based EOM.

Polarization Independent Optical Phase Modulator Using Electro-Optic Polymer (전기광학 폴리머를 이용한 편광 무의존 광 위상 변조기)

  • 오현호;신상영
    • Proceedings of the IEEK Conference
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    • 1999.11a
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    • pp.326-329
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    • 1999
  • In this paper, we demonstrate a polarization independent optical phase modulator using electro-optic polymer, P2ANS. To overcome the intrinsic polarization dependency of electro-optic effect, we control the optic axis using a new electrode structure. P2ANS(42:75) and P2ANS(25:75) are used for the core layer and the cladding layer, respectively. The buried-type single mode waveguide is fabricated by oxygen ion reactive etching and electic poling is performed by applying 1, 200V at 135$^{\circ}C$. The measured V$_{\pi}$ of the device for both TE and TM modes are 70V.

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Electro-Optic Cutoff Modulator on Y-cut LiNbO$_3$ Proton-Diffused Channel Waveguides (Y-cut LiNbO$_3$ 양자확산 광도파로를 이용한 전기광학 차단형 광변조기)

  • 손영성
    • Proceedings of the Optical Society of Korea Conference
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    • 1990.02a
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    • pp.269-273
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    • 1990
  • The proton conserving effect of diffusion with self-aligned SiO2-cladding is investigated by infrared transmission spectra. Based on the proton conserving effect, proton-diffused channel waveguides with self-aligned SiO2-cladding substrates. And an electro-optic cutoff modulator with self aligned electrode that utilizes a single-mode proton-diffused channel waveguide in a Y-cut XX-propagating LiNbO3 substrate is fabricated. Over 20 dB extinction has been achieved with applied voltage of 15V.

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Off-level Sampling Method for Bias Stabilization of an Electro-Optic Mach-Zehnder Modulator (전기 광학 광변조기의 바이어스 안정화를 위한 오프 레벨 샘플링 방법)

  • 양충열;홍현하;김해근
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.25 no.1B
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    • pp.42-47
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    • 2000
  • A new method for stabilizing the bias of an Electro-Optic mach-Zehnder modulator has been developed to maximize the switching extinction ratio in burst mode packet traffic. By sampling and minimizing the off-level output power of the modulator, a high extinction optical gate switch in obtain regardless of the variation of the packet traffic density.

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Laser Light Modulation with Resonated Crystal Modulator (공진형 결정체변조기에 의한 레이저광변조)

  • 양인응;김영권
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.7 no.2
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    • pp.1-12
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    • 1970
  • In this paper, theoretical and experimental study about the light modulation at X-band(9375MHz) micro wave, using the linear electro-optic effect, has been described. The electro-optic crystal, KDP (potassium dihydrogen phosphate)is used for modulator crystals which is composed resonated modulator. Output performances of modulated wave through movable short positions are presented. It was critically respond from 2. And the output modulated intensity was compared with theoretical curve. Consequently, in spite of many problems remain yet, most promissing and more sucessful modulator configurations are compleely given.

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Study on the Design of Mach-Zehnder Type GaAs Waveguide Electro-Optic Modulator (Mach-Zehnder 형 GaAs 광도파로 변조기의 설계 연구)

  • 이종진;김현배;박정호;박진우
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.17 no.5
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    • pp.442-451
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    • 1992
  • Mach-Zehnder type GaAs elcetro-optic waveguide modulator has been designed in this paper.The modulator. Considered is based on the Mach-Zehnder interferometer configuration, consisting of two Y branch couping rib type waveguides formed in two epitaxial layers on GaAs substrate. The mode theory on waveguides and electo-optic effect of GaAs were utilized to determine the design parameters for the modulator proposed. Effective index method was applied to design the of waveguide supporting a single mode were calculated to achieve the optimized operation of the modulator. Considering interrelationships between many parameters.

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Automatic Off Level Biasing for Electro Optic Mach-Zehnder Modulator (전기적 외부 광변조기의 자동 오프레벨 바이어싱)

  • Yang, Choong-Reol;Ko, Je-Soo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.32 no.7A
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    • pp.672-677
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    • 2007
  • A novel method for stabilizing the bias of an Electro-Optic Mach-Zehnder modulator has been proposed and demonstrated to maximize the switching extinction ratio in burst mode packet traffic. By sampling and minimizing the off-level output power of the modulator, a high extinction optical gate switch in obtain regardless of the variation of the packet traffic density.

Integrated-Optic Electric-Field Sensor Utilizing a Ti:LiNbO3 Y-fed Balanced-Bridge Mach-Zehnder Interferometric Modulator With a Segmented Dipole Antenna

  • Jung, Hongsik
    • Journal of the Optical Society of Korea
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    • v.18 no.6
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    • pp.739-745
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    • 2014
  • We have demonstrated a $Ti:LiNbO_3$ electro-optic electric-field sensor utilizing a $1{\times}2$ Y-fed balanced-bridge Mach-Zehnder interferometric (YBB-MZI) modulator, which uses a 3-dB directional coupler at the output and has two complementary output waveguides. A dc switching voltage of ~25 V and an extinction ratio of ~12.5 dB are observed at a wavelength of $1.3{\mu}m$. For a 20 dBm rf input power, the minimum detectable electric fields are ~8.21, 7.24, and ~13.3 V/m, corresponding to dynamic ranges of ~10, ~12, and ~7 dB at frequencies of 10, 30, and 50 MHz respectively. The sensors exhibit almost linear response for an applied electric-field intensity from 0.29 V/m to 29.8 V/m.

Integrated Photonic RF Phase Shifter Using an Electrooptic Polymer Modulator (전기광학폴리머 변조기틀 이용한 집적광학적 RF 위상변환기)

  • 이상신
    • Korean Journal of Optics and Photonics
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    • v.15 no.3
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    • pp.274-277
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    • 2004
  • An integrated photonic radio frequency (RF) phase shifter has been proposed and fabricated using a nested dual Mach-Zehnder modulator configuration in a new electro-optic polymer. The fabricated device shows a continuous voltage control of the RF signal phase. A near-linear phase shift exceeding 108$^{\circ}$was obtained for a 16-GHz microwave signal by tuning the do control voltage over a 7.8- $V_{pp}$ range.e.