• IEIE Transactions on Smart Processing and Computing
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• v.6 no.2
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• pp.109-116
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• 2017

In this paper, we propose an Internet of Things (IoT) platform for ocean observation buoys. The proposed system consists of various sensor modules, a gateway, and a remote monitoring site. In order to integrate sensor modules with various communications interfaces, we propose a controller area network (CAN)-based sensor data packet and a protocol for the gateway. The proposed scheme supports the registration and management of sensor modules so as to make it easier for the buoy system to manage various sensor modules. Also, in order to extend communication coverage between ocean observation buoys and the monitoring site, we implement a multi-hop relay network based on a mesh network that can provide greater communication coverage than conventional buoy systems. In addition, we verify the operation of the implemented multi-hop relay network by measuring the received signal strength indication between buoy nodes and by observing the collected data from the deployed buoy systems via our monitoring site.

• ETRI Journal
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• v.32 no.5
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• pp.665-675
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• 2010

Recent research on mobile Internet protocol television and digital right management (DRM) interconnections has focused on multimedia technologies designed to enhance content scalability and adaptive content distribution. However, due to the architectural and scalable limitations, recent systems are not flexible and securable with respect to their adaptive content distribution and protective policy management. Therefore, we propose a content protective multi-agent platform that provides secure multimedia services, correlation management, pattern-based management, and multi-source multi-use (MsMu)-based services. Our architecture, supported by DRM, lets us create a rich set of MsMu-based content protection and seamless multimedia services through the extension of one source multi-use (OsMu)-based content services. We have verified our platform, which provides scalable and securable services with a 17% lower service response time by using a testbed.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.69-71
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• 2002

$(Bi, La)Ti_{3}O_{12}(BLT)$ ferroelectric thin films were prepared on $Al_{2}O_{3}/Si$ substrates by the sol-gel method. The as-coated films were post-annealed at the temperature of $650^{\circ}C$ and $700^{\circ}C$ for 30 min. The crystallinty, surface morphologies and electrical properties were affected by the annealing temperatures. The BLT films annealed at above $650^{\circ}C$ exhibited typical bismuth layered perovskite structures with (00$\ell$) preferred orientation. The granular shaped grains with a size of approximately 90nm was formed in the film sample annealed at $700^{\circ}C$. The memory window volatge of the BLT film was 2.5V. The leakage current of BLT films annealed at $650^{\circ}C$ was about $1\times10^{-7}A/\textrm{cm}^2$ at 3V.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.323-327
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• 2015

In this paper, parameters related with partial discharge (PD) were analyzed in SF₆ gas under AC and DC voltages. Three electrode systems (protrusion on conductor, protrusion on enclosure, and free particle) were fabricated to simulate PD defects in a gas-insulated switchgear (GIS). All electrode systems were filled with SF₆ gas at 0.5 MPa. PD pulses were detected using an oscilloscope and a data acquisition (DAQ) based on IEC 60270. To analyze the PD characteristics under AC and DC voltages, parameters such as discharge inception voltage (DIV), discharge extinction voltage (DEV), pulse magnitude, repetition rate, and T-F map were compared. From the experimental results, PD was revealed to have different characteristics under AC and DC, and these results may be useful for diagnosis of power facilities operated under HVDC.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.12-15
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• 2013

In this study, we carried out an investigation of the etching characteristics (etch rate, and selectivity to $SiO_2$) of $ZrO_2$ thin films in a $CF_4$/Ar inductively coupled plasma (ICP) system. The maximum etch rate of 60.8 nm/min for $ZrO_2$ thin films was obtained at a 20 % $CF_4/(CF_4+Ar)$ gas mixing ratio. At the same time, the etch rate was measured as a function of the etching parameter, namely ICP chamber pressure. X-ray photoelectron spectroscopy (XPS) analysis showed efficient destruction of the oxide bonds by the ion bombardment, as well as an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch characteristics for the $CF_4$-containing plasmas.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.289-292
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• 2016

This paper dealt with the optimal design of a follow current disconnector for DC arresters used in electric traction vehicles. The disconnector separates the ground lead from an arrester to prevent a line-to-ground fault of an aged arrester and should not affect the operation and function such as the reference and the clamping voltage of the connected arrester. The designed disconnector is composed of a resistor, a spark gap, and a cartridge. The results showed that the sparkover voltage increased with the gap distance whereas the reference voltage was almost the same as that without the disconnector. The sparkover voltage was 3.95 kV when the gap distance was 0.5 mm. Regardless of the gap distance, the reference and the clamping voltage of the assembled disconnector with an arrester were measured to be the same as those of the arrester alone.

• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.202-205
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• 2010

In this study, the etch properties of $Al_2O_3$ thin films deposited by atomic layer deposition were investigated as a function of the $O_2$ content in $BCl_3$/Ar inductively coupled plasma. The experiments were performed by comparing the etch rates and selectivity of $Al_2O_3$ over the hard mask materials as functions of the input plasma parameters, such as the gas mixing ratio, DC-bias voltage, ratio-frequency (RF) power and process pressure. The highest obtained etch rate was 477 nm/min at an RF power of 700 W, $O_2$ to $BCl_3$/Ar gas ratio of 15%, DC-bias voltage of -100 V and process pressure of 15 mTorr. The deposition occurred on the surfaces when the amount of $O_2$ added to the $BCl_3$/Ar gas was too high at a low DC-bias voltage or high process pressure. X-ray photoelectron spectroscopy was used to investigate the chemical reactions on the etched surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.353-357
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• 2010

Recently, silicon etching have received much attention for display industry, nano imprint technology, silicon photonics, and MEMS application. After the etching process, removing of etch mask and residue of sidewall is very important. The investigation of the etched mask removing was carried out by using the ashing, HF dipping and acid cleaning process. Experiment shows that oxygen component of reactive gas and photoresist react with silicon and converting them into the mask fence. It is very difficult to remove by using ashing or acid cleaning process because mask fence consisted of Si and O compounds. However, dilute HF dipping is very effective process for SiOx layer removing. Finally, we found optimized condition for etched mask removing.

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.916-924
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• 2015

Electromagnetic Interference (EMI) is a system to system or environment to system phenomenon. The literature survey proved that the Randomized Pulse Width Modulation (RPWM) technique is a promising technique to reduce EMI. A new Constant Trailing Edge, Randomized Pulse Width Modulation (CTERPWM) technique is proposed in this paper. The effect of the proposed RPWM technique for mitigation of conducted-EMI on Cuk converter operating in Continuous Conduction Mode (CCM) is simulated and tested. In this paper, the analytical expressions for the Power Spectral Density (PSD) are derived for the proposed RPWM technique and are validated by experimental measurements. The effectiveness of the proposed RPWM technique on the mitigation of conducted-EMI is verified comparing simulation and experimental results and it is identified that both the results are almost similar with allowable experimental deviations. The comparative investigation proves that the proposed RPWM technique can mitigate and spread the dominant peaks of conducted-EMI over the complete spectrum for the Cuk converter. Based on the investigation the CTERPWM technique is recommended for adoption.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.201-205
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• 2015

This paper dealt with the condensing technology of an LED light source that uses a parabolic reflector to replace a searchlight equipped with a xenon lamp. A ray-tracing simulation was conducted to analyze the influence of the diameter of the reflector and the size of the light source on light condensing. The combination of a parabolic reflector with a diameter of 620 mm and a focal distance of 220 mm, and a 9 mm multi-chip package (MCP) with a luminous flux of 7,000 lm showed the narrowest beam angle. The luminous intensity at the center was measured at 7.7×10⁶ cd. The distance between the light source and the point where the illuminance was 1 lx was calculated to be 2.8 km. The power consumption of the system was 95 W, which is only 9.5% of that of the 1 kW xenon searchlight, and the beam angle was 1.03°. In a site experiment, it was confirmed that the light ray reflected from the LED searchlight proceeds forward without any diffusion because of the narrow beam angle.