• 한국전기전자재료학회논문지
• /
• 제30권3호
• /
• pp.162-169
• /
• 2017

Indium tin oxide (ITO) thin films show a low sheet resistance and high transmittance in the visible range of the spectrum. Therefore, they play an important role as transparent electrodes for flat panel displays. However, their resistivity is rather high for use as a transparent electrode in large displays. One way to improve electrical and optical properties in large displays is to use ITO/Ag/ITO multilayer films. ITO/Ag/ITO multilayer films have lower sheet resistance than single layer ITO films with the same thickness. Prior to the ITO/Ag/ITO multilayer experiments, optimal condition for thickness change are necessary. Their thicknesses were deposited differently in order to analyze electrical and optical properties. However, when optimal single film characteristics are applied to ITO/Ag/ITO multilayer films, other phenomena appeared. After analyzing the electrical and optical properties by changing ITO and Ag film thickness, ITO/Ag/ITO multilayer films were optimized. By combining ITO film at $586\;{\AA}$ and Ag film at 10 nm, the ITO/Ag/ITO multilayer films showed optimized high optical transmittance of 87.65%, and the low sheet resistance of $5.5{\Omega}/sq$.

• 한국분말재료학회지
• /
• 제24권4호
• /
• pp.292-297
• /
• 2017

A metallic oxide layer of a heat-resistant element contributes to the high-temperature oxidation resistance by delaying the oxidation and has a positive effect on the increase in electrical resistivity. In this study, green compacts of Fecralloy powder mixed with amorphous and crystalline silica are oxidized at $950^{\circ}C$ for up to 210 h in order to evaluate the effect of metal oxide on the oxidation and electrical resistivity. The weight change ratio increases as per a parabolic law, and the increase is larger than that observed for Fecralloy owing to the formation of Fe-Si, Fe-Cr composite oxide, and $Al_2O_3$ upon the addition of Si oxide. Si oxides promote the formation of $Al_2O_3$ and Cr oxide at the grain boundary, and obstruct neck formation and the growth of Fecralloy particles to ensure stable electrical resistivity.

• 제어로봇시스템학회논문지
• /
• 제15권9호
• /
• pp.877-880
• /
• 2009

A curing process in post-printing section of R2R process is required for an electrical property of the printed pattern when devices such as RFID, Solar cell are printed. PEN as well as heat-stabilized PET which is used as a plastic substrate would be deformed at high temperature due to change of its elastic modulus. And crack in the printed pattern, which is on the plastic substrate is occurred due to the deformation of the substrate. The occurrence of crack causes electrical resistance to increase and the quality of the device to deteriorate. In case of RFID antenna, the range of reading distance is shortened as the electrical resistance of the antenna is increased. Therefore, the deformation of the plastic substrate, which causes the occurrence of crack, should be minimized by setting up low operating tension in R2R process. In low tension, slippage between a moving substrate and a roller would be generated when the operating speed is increased. And scratch would be occurred when slippage is generated due to an air entrainment, which is related to the thickness of the air film. The thickness of the air film is increased when operating speed is increased as shown by simulation based on mathematical model. The occurrence of scratch in conductive pattern printed by roll to roll process is a critical damage because it causes degradation or failure of electrical property of it.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1995년도 하계학술대회 논문집 C
• /
• pp.1034-1038
• /
• 1995

The purpose of this study is to research and develop $TiS_2$ composite cathode for lithium polymer battery(LPB). $TiS_2$ electrode represent a class of insertion positive electrode used in Li secondary batteries. In this study, we investigated preparation of $TiS_2$ composite cathode and AC impedance response of $TiS_2$ composite/SPE/Li cells as a function of state of charge(SOC) and cycling. The resistance of B type cell using $TiS_2PEO_8LiClO_4PC_5EC_5$ composite cathode was lower than that of A type cell using $TiS_2PEO$ composite cathode. The cell resistance of B type cell is high for the first few percent discharge, decreases for midium discharge and then increases again toward the end of discharge. We believe the magnitude of the cell resistance is dominated by passivation layer impedance and small cathode resistance. AC impedance results indicate that the cell internal resistance increase with cycling, and this is attributed to change of passivation layer impedance with cycling. The passivation layer resistance($R_f$) of B type cell decreases for the 2nd cycling and then increases again with cycling. Redox coulombic efficiency of B type cell was about 141% at 1st cycle and 100% at 12th cycle. Also, $TiS_2$ specific capacity was 115 mAh/g at 12 cycle.

• 한국전기전자재료학회논문지
• /
• 제26권12호
• /
• pp.858-862
• /
• 2013

The front electrode should be used to make solar cell panel so as to collect electron. The front electrode is used by paste type, printed on the Si-solar cell wafer and sintered at about $800^{\circ}C$. The paste is composed Ag powder and glass frit which make the ohmic contact between Ag electrode and n-type semiconductor layer. From the previous study, the Ag electrodes which used two commercial glass frit of Bi-system were so different on the interface resistance. The main composition of them was Bi-Zn-B-Si-O and few additives added in one of them. In this study, glass frit was made with the ratio of $Bi_2O_3$ and ZnO on the main composition, and then paste using glass frit was prepared respectively. And, also, the paste using the glass frit added oxide additives were prepared. The change of interface resistance was not large with the ratio of $Bi_2O_3$ and ZnO. In the case of G6 glass frit, 78 wt% $Bi_2O_3$ addition, the interface resistance was $190{\Omega}$ and most low. In the glass frit added oxide, the case of Ca increased over 10 times than it of G6 glass frit on the interface resistance. It was thaught that after sintering, Ca added glass frit was not flowed to the interface between Ag electrode and wafer but was in the Ag electrode.

• 한국염색가공학회지
• /
• 제19권4호
• /
• pp.26-31
• /
• 2007

Nanocomposite resin(PUD-CNT) composed of Carbon nanotube(CNT) and Polyurethane Dispersion (PUD) was prepared by different contents of CNT($0{\sim}5%$). PUD-CNT was coated on samples, and their electrical conductivity was investigated. With increasing CNT content, static change, half life and surface resistance decreased. Composites having 5% CNT showed $10^9{\Omega}/cm$(surface resistance), and 40V (stactic charge). Respectively, From this results, PUD-CNT can be used as a antistatic material.

• 전기의세계
• /
• 제30권4호
• /
• pp.227-230
• /
• 1981

The variation of sheet resistance and the reduction of masking oxide thickness with the flow rate of nitrogen gas has been measured in Boron predeposition process with Planar Diffusion source, BN-975. At 900.deg. C, the sheet resistance varied as much as 75% when the nitrogen flow rate was changed from 0.4 liters/min to 2.0 liters/min. At 975.deg. C, however, only 12% of sheet resistance variation was observed under the same flow rate change. The reduction of masking oxide thickness at 975.deg. C for a 5 min predeposition was 600 nm when the nitrogen flow rate was 0.4 liters/min. When the flow rate incresased to 1.9 liters/min, however, only 100nm of masking oxide was consumed in a similar predeposition process.

• 반도체디스플레이기술학회지
• /
• 제2권4호
• /
• pp.31-35
• /
• 2003

We present a formation technique of thin film heater for heat transfer components. Thin film structures of Cr-Si have been prepared on top of alumina substrates by magnetron sputtering. More samples of Mo thin films were prepared on silicon oxide and silicon nitride substrates by electron beam evaporation technology. The electrical properties of the thin film structures were measured up to the temperature of $500^{\circ}C$. The thickness of the thin films was ranged to about 1 um, and a post annealing up to $900^{\circ}C$ was carried out to achieve more reliable film structures. In measurements of temperature coefficient of resistance (TCR), chrome-rich films show the metallic properties; whereas silicon-rich films do the semiconductor properties. Optimal composition between Cr and Si was obtained as 1 : 2, and there is 20% change or less of surface resistance from room temperature to $500^{\circ}C$. Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) were used for the material analysis of the thin films.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
• /
• pp.807-809
• /
• 1998

We give pressure stimulation into organic thin films and detect the induced displacement current, In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/organic thin films(Kapton-Polyimide)/Au and I-V properties of the device is measured from 0(V) to +5(V). The maximum value of measured current is increased as the number of accumulated layers are decreased. The resistance for the number of accumulated layers, the energy density for an input voltage show desired results.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
• /
• pp.714-716
• /
• 2005

We studied the dependence of the electrical characteristics of MgO protecting layer on temperature in an AC PDP cell. Careful measurements of the surface resistance of MgO were performed for the temperature range from room temperature to $100^{\circ}C$ with and without the VUV illumination. Experimental results show that the resistivity is affected by not only the temperature but also VUV irradiation. The measurement of wall charge distribution and the address discharge delay time as to the temperature show that the resistivity change of MgO may affect the wall voltage and consequently the discharge delay time.