• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.6
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• pp.3-9
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• 2013

Aluminum Oxide($Al_2O_3$) ceramics are excellent candidates for such applications due to their outstanding mechanical, thermal, and tribological properties. However, they are difficult to machine using conventional mechanical methods. Carbon fillers, such as carbon nanotubes(CNT) and graphene nanoplatelets(GNP)can be dispersed in a ceramic matrix to improve the mechanical and electrical properties. In this study, CNT and Graphene reinforced hybrid ceramic composites were fabricated using the spark plasma sintering method at a temperature of $1,500^{\circ}C$, pressure of 40 MPa, and soaking time of 10min. Besides this, the material properties such as microstructure, crystal structure, hardness, and electrical conductivity were analyzed using FE-SEM, XRD, Vickers, and the 4-point probe method. A micro machining test was carried out to compare the effects of the material properties and the machining performance for CNT and Graphene reinforced ceramic composites.

• Carbon letters
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• v.14 no.3
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• pp.162-170
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• 2013

The performance of graphene-based electronic devices is critically affected by the quality of the graphene-metal contact. The understanding of graphene-metal is therefore critical for the successful development of graphene-based electronic devices, especially field-effect-transistors. Here, we provide a review of the peculiar properties of graphene-metal contacts, including work function pinning, the charge transport mechanism, the impact of the process on the contract resistance, and other factors.

• Carbon letters
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• v.24
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• pp.1-9
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• 2017

We studied the basic properties and fabrication of reduced graphene oxide (rGO) prepared using eco-friendly reduction agents in the graphene solution process. Hydrazine is generally used to reduce graphene oxide (GO), which results in polluting emissions as well as fixed nitrogen functional groups on different defects in the graphene sheets. To replace hydrazine, we developed eco-friendly reduction agents with similar or better reducing properties, and selected of them for further analysis. In this study, GO layers were produced from graphite flakes using a modified Hummer's method, and rGO layers were reduced using hydrazine hydrate, L-ascorbic acid, and gluconic acid. We measured the particle sizes and the dispersion stabilities in the rGO dispersed solvents for the three agents and analyzed the structural, electrical, and optical properties of the rGO films. The results showed that the degree of reduction was in the order L-ascorbic acid ${\geq}$ hydrazine > glucose. GO reduced using L-ascorbic acid had a sheet resistance of $121k{\Omega}/sq$, while that reduced using gluconic acid showed worse electrical properties than the other two reduction agents. Therefore, L-ascorbic acid is the most suitable eco-friendly reduction agent that can be substituted for hydrazine.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.291.1-291.1
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• 2016

Graphene by one of the two-dimensional (2D) materials has been focused on electronic applications due to its ultrahigh carrier mobility, outstanding thermal conductivity and superior optical properties. Although graphene has many remarkable properties, graphene devices have low on/off current ratio due to its zero bandgap. Despite considerable efforts to open its bandgap, it's hard to obtain appropriate improvements. To solve this problem, heterojunction barristor was proposed based on graphene. Mostly, this heterojunction barristor is made by transition metal dichalcogenides (TMDs), such as molybdenum disulfide ($MoS_2$) and tungsten diselenide ($WSe_2$), which have extremely thickness scalability of TMDs. The heterojunction barristor has the advantage of controlling graphene's Fermi level by applying gate bias, resulting in barrier height modulation between graphene interface and semiconductor. However, charged impurities between graphene and $SiO_2$ cause unexpected p-type doping of graphene. The graphene's Fermi level modulation is expected to be reduced due to this p-doping effect. Charged impurities make carrier mobility in graphene reduced and modulation of graphene's Fermi level limited. In this paper, we investigated theoretically and experimentally a relevance between graphene's Fermi level and p-type doping. Theoretically, when Fermi level is placed at the Dirac point, larger graphene's Fermi level modulation was calculated between -20 V and +20 V of $V_{GS}$. On the contrary, graphene's Fermi level modulation was 0.11 eV when Fermi level is far away from the Dirac point in the same range. Then, we produced two types heterojunction barristors which made by p-type doped graphene and graphene treated 2.4% APTES, respectively. On/off current ratio (32-fold) of graphene treated 2.4% APTES was improved in comparison with p-type doped graphene.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.256-256
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• 2010

It is demonstrated that graphene sheets are produced via thermal reduction of graphene oxide (GO) in the presence of imidazoium-based poly (ionic liquid) (PIL). PILs plays an important role in minimizing the reduction time and dispersing graphene sheets in organic solvents. In addition, as-obtained graphene sheets are found to be functionalized with PIL molecules by the strong interaction of PIL and the graphene, as analyzed by various physical methods such as atomic force microscopy (AFM), X-ray photoelectric spectroscopy (XPS) and Raman spectroscopy. Such a strong interaction allows the successful production of graphene/PIL composites, in which their electrical properties are controllable by the loading level of graphene in the PIL matrix.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.659-659
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• 2013

Recently, graphene has been intensively studied due to the fascinating physical, chemical and electrical properties. It shows high carrier mobility, high current density, and high thermal conductivity compare with conventional semiconductor materials even it has single atomic thickness. Especially, since graphene has fantastic electrical properties many researchers are believed that graphene will be replacing Si based technology. In order to realize it, we need to prepare the large and uniform graphene. Chemical vapor deposition (CVD) method is the most promising technique for synthesizing large and uniform graphene. Unfortunately, CVD method requires transfer process from metal catalyst. In transfer process, supporting polymer film (Such as poly (methyl methacrylate)) is widely used for protecting graphene. After transfer process, polymer layer is removed by organic solvents. However, it is impossible to remove it completely. These organic residues on graphene surface induce quality degradation of graphene since it disturbs movement of electrons. Thus, in order to get an intrinsic property of graphene completely remove of the organic residues is the most important. Here, we introduce modified wet graphene transfer method without PMMA. First of all, we grow the graphene from Cu foil using CVD method. And then, we deposited several metal films on graphene for transfer layer instead of PMMA. Finally, we fabricate graphene FET devices. Our approaches show low defect density and non-organic residues in comparison with PMMA coated graphene through Raman spectroscopy, SEM and AFM. In addition, clean graphene FET shows intrinsic electrical characteristic and high carrier mobility.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.384.2-384.2
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• 2014

We investigated the electrical and structural properties of chemical vapor deposition (CVD)-grown graphene and post treated by O2 plasma. For the patterning of graphene, the plasma technology is generally used and essential for etching of graphene. But, the cautious O2 plasma treatments are required to avoid the damage in graphene edge which can be the harmful effects on the device performance. To analyze the effects of plasma treatment on structural properties of graphene, the change of surface morphology of graphene are measured by scanning electron microscope and atomic force microscope before and after plasma treatment. In addition, the binding energy of carbon and oxygen are measured through to X-ray photoelectron spectroscopy. After plasma treatment, the severe changes of surface morphology and binding energy of carbon and oxygen were observed which effects on the change of sheet resistance. Finally, to analyze of graphene characteristics, we measured the Raman spectroscopy. The measured results showed that the plasma treatment makes the upward of D-peak and downward of G'-peak by elevated power of plasma.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.867-871
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• 2013

The Ti adhesion layers were deposited onto the glass substrate for transparent capacitors using $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO) dielectric thin films. Graphene was transferred onto the Ti/glass substrate after growing onto the Ni/$SiO_2$/Si using rapid-thermal pulse CVD (RTPCVD). The BMNO dielectric thin films were investigated for the microstructure, dielectric and leakage properties in the case of capacitors with and without Ti adhesion layers. Leakage current and dielectric properties were strongly dependent on the Ti adhesion layers grown for graphene bottom electrode.

• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.246-249
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• 2013

Graphene was obtained on Cu foil by thermal decomposition method. A gas mixture of $H_2$ and $CH_4$ and an ambient annealing temperature of $1,000^{\circ}C$ were used during the deposition for 30 Min., and for the transfer onto $SiO_2/Si$ and Si substrates. The physical properties of graphene were investigated with regard to the effect ofnitrogen atom doping and the various substrates used. The G/2D ratio decreased when the graphene became monolayer graphene. The graphene grown on $SiO_2/Si$ substrate showed a low intensity of the G/2D ratio, because the polarity of the $SiO_2$ layer improved the quality of graphene. The intensity of the G/2D ratio of graphene doped with nitrogen atoms increased with the doping time. The quality of graphene depended on the concentration of the nitrogen doping and chemical properties of substrates. High-quality monolayer graphene was obtained with a low G/2D ratio. The increase in the intensity of the G/2D ratios corresponded to a blue shift in the 2D peaks.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.39-39
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• 2010

There have been many efforts to utilize the outstanding properties of graphene for macroscopic applications such as transparent conducting films useful for flexible/stretchable electronics. However, the lack of efficient synthesis, transfer, and doping methods limited the scale and the quality needed for the practical production of graphene films. In this presentation, we introduce ultra-large scale (~30 inch) synthesis and roll-to-roll transfer of graphene films showing excellent electrical and physical properties suitable for practical applications. Considering the outstanding scalability/processibility of roll-to-roll and CVD methods and the extraordinary flexibility/conductivity of graphene films, we expect the commercial production and application electrodes replacing the use of ITO can be realized in near future.