• Applied Microscopy
• /
• v.45 no.3
• /
• pp.126-130
• /
• 2015

Raman spectroscopy is one of the most widely used tools in the field of graphene and two-dimensional (2D) materials. It is used not only to characterize structural properties such as the number of layers, defect densities, strain, etc., but also to probe the electronic band structure and other electrical properties. As the field of 2D materials expanded beyond graphene to include new classes of layered materials including transition metal dichalcogenides such as $MoS_2$, new physical phenomena such as anomalous resonance behaviors are observed. In this review, recent results from Raman spectroscopic studies on 2D materials are summarized.

• Journal of Adhesion and Interface
• /
• v.22 no.4
• /
• pp.153-157
• /
• 2021

Graphene, a two-dimensional carbon allotrope, has outstanding mechanical and electrical properties. In particular, the charge carrier mobility of graphene is known to be about 100 times higher than that of silicon, and it has received attention as a core material for next-generation electronic devices. However, graphene is very sensitive to environmental conditions, especially vulnerable to moisture or oxygen. It becomes a disadvantage in that the stability of the graphene-based electronic device, so various attempts are being made to solve this problem. In this work, we report a method to greatly improve the stability by controlling the surface energy of the polymer layer used for transferring the insulating layer of the graphene field-effect transistor. As the surface energy of the polymer used as the insulating layer was lowered, the stability could be improved by effectively controlling the adsorption of impurities in the atmosphere such as water molecules or oxygen.

• Carbon letters
• /
• v.22
• /
• pp.1-13
• /
• 2017

Porous materials play a vital role in science and technology. The ability to control their pore structures at the atomic, molecular, and nanometer scales enable interactions with atoms, ions and molecules to occur throughout the bulk of the material, for practical applications. Three-dimensional (3D) porous carbon-based materials (e.g., graphene aerogels/hydrogels, sponges and foams) made of graphene or graphene oxide-based networks have attracted considerable attention because they offer low density, high porosity, large surface area, excellent electrical conductivity and stable mechanical properties. Water pollution and associated environmental issues have become a hot topic in recent years. Rapid industrialization has led to a massive increase in the amount of wastewater that industries discharge into the environment. Water pollution is caused by oil spills, heavy metals, dyes, and organic compounds released by industry, as well as via unpredictable accidents. In addition, water pollution is also caused by radionuclides released by nuclear disasters or leakage. This review presents an overview of the state-of-the-art synthesis methodologies of 3D porous graphene materials and highlights their synthesis for environmental applications. The various synthetic methods used to prepare these 3D materials are discussed, particularly template-free self-assembly methods, and template-directed methods. Some key results are summarized, where 3D graphene materials have been used for the adsorption of dyes, heavy metals, and radioactive materials from polluted environments.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.240.2-240.2
• /
• 2013

The device scale of flash memory was confronted with quantum mechanical limitation. The next generation memory device will be required a break-through for the device scaling problem. Especially, graphene is one of important materials to overcome scaling and operation problem for the memory device, because ofthe high carrier mobility, the mechanicalflexibility, the one atomic layer thick and versatile chemistry. We demonstrate the hybrid memory consisted with the metal-oxide quantum dots and the mono-layered graphene which was transferred to $SiO_2$ (5 nm)/Si substrate. The 5-nm thick secondary $SiO_2$ layer was deposited on the mono-layered graphene by using ultra-high vacuum sputtering system which base pressure is about $1{\times}10^{-10}$ Torr. The $In_2O_3$ quantum dots were distributed on the secondary $SiO_2$2 layer after chemical reaction between deposited In layer and polyamic acid layer through soft baking at $125^{\circ}C$ for 30 min and curing process at $400^{\circ}C$ for 1 hr by using the furnace in $N_2$ ambient. The memory devices with the $In_2O_3$ quantum dots on graphene monolayer between $SiO_2$ thin films have demonstrated and evaluated for the application of next generation nonvolatile memory device. We will discuss the electrical properties to understating memory effect related with quantum mechanical transport between the $In_2O_3$ quantum dots and the Fermi level of graphene layer.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.244.1-244.1
• /
• 2013

The p-type GaN which act as a hole injection layer in GaN-based LEDs has fundamental problems. The first one arises from the difficulty in growing a highly doped p-GaN (with a carrier concentration exceeding ~1018 $cm^{-3}$). And the second one is the absence of appropriate metals or conducting oxides having a work function that is larger than that of p-type GaN (7.5 eV). Moreover, the LED efficiency is decreases gradually as the injection current increases (the so-called 'efficiency droop' phenomenon). The efficiency droop phenomenon in InGaN quantum wells (QWs) has been a large obstacle that has hindered high-efficiency operation at high current density. In this study, we introduce the new approaches to improve the light-output power of LEDs by using graphene oxide sheets. Graphene oxide has many functional groups such as the oxygen epoxide, the hydroxyl, and the carboxyl groups. Due to nature of such functional groups, graphene oxide possess a lot of hole carriers. If graphene oxide combine with LED top surface, graphene oxide may supply hole carriers to p-type GaN layer which has relatively low free carrier concentration less than electron concentration in n-type GaN layer. To prove the enhancement factor of graphene oxide coated LEDs, we have investigated electrical and optical properties by using ultra-violet photo-excited spectroscopy, confocal scanning electroluminescence microscopy.

• Korean Chemical Engineering Research
• /
• v.51 no.3
• /
• pp.388-393
• /
• 2013

The study was focused to evaluate the possibility for combination membrane of bacterial cellulose (BC) and graphene with high electrical properties. BC with natural polymer matrix was known to have strong physical strength. For the combination of graphene with BC, the surface of graphene was modified with oxygen plasma by changing strength and time of radio waves in room temperature. Water contact angle of modified graphene grew smaller from $130^{\circ}$ to $12^{\circ}$. XPS analysis showed that oxygen content after treatment increased from 2.99 to 10.98%. Damage degree of graphene was examined from $I_D/I_G$ ratio of Raman analysis. $I_D/I_G$ ratio of non-treated graphene (NTG) was 0.11, and 0.36 to 0.43 in plasma treated graphene (PTG), increasing structural defects of PTG. XRD analysis of PTG membrane with BC was $2{\theta}$ same to BC only, indicating chemically combined membrane. In FT-IR analysis, 1,000 to 1,300 $cm^{-1}$ (C=O) peak indicating oxygen radicals in PTG membrane had formed was larger than NTG membrane. The results suggest that BC as an alternation of plastic material for graphene combination has a possibility in some degree on the part like transparent conductive films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.2
• /
• pp.110-114
• /
• 2014

In this study, we report the doping effect of graphene quantum dots (QDs) in nematic liquid crystal (NLC) system on rubbed polyimide (PI) surface. The good LC alignment and high thermal stability in QD-LC cell system on rubbed PI surfaces can be measured. Also, the low threshold voltage of QD-TN cell was observed about 2.77 V. The fast response time of 13.2 ms for QD-TN cell can be achieved. Finally, the good voltage holding ratio of QD-TN cell on rubbed PI surface was measured.

• Bulletin of the Korean Chemical Society
• /
• v.35 no.6
• /
• pp.1799-1805
• /
• 2014

In this article, we described about the preparation and electrochemical properties of a flexible energy storage system based on a plastic polyethylene terephthalate (PET) substrate. The PET treated with UV/ozone was fabricated with multilayer films composed of 30 polyaniline (PANi)/graphene oxide (GO) bilayers using layer-by-layer assembly of positively charged PANi and negatively charged GO. The conversion of GO to the reduced graphene oxide (RGO) in the multilayer film was achieved using hydroiodic acid vapor at $100^{\circ}C$, whereby PANi structure remained nearly unchanged except a little reduction of doping state. Cyclic voltammetry and charge/discharge curves of 30 PANi/RGO bilayers on PET substrate (shorten to PANi-$RGO_{30}$/PET) exhibited an excellent volumetric capacitance, good cycling stability, and rapid charge/discharge rates despite no use of any metal current collectors. The specific capacitance from charge/discharge curve of the PANi-$RGO_{30}$/PET electrode was found to be $529F/cm^3$ at a current density of $3A/cm^3$, which is one of the best values yet achieved among carbon-based materials including conducting polymers. Furthermore, the intrinsic electrical resistance of the PANi-$RGO_{30}$/PET electrodes varied within 20% range during 200 bending cycles at a fixed bend radius of 2.2 mm, indicating the increase in their flexibility by a factor of 225 compared with the ITO/PET electrode.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.1
• /
• pp.7-15
• /
• 2015

We have investigated electrical properties of graphene/Ge Schottky barrier diode (SBD) fabricated on Ge film epitaxially grown on Si substrate. When decreasing temperature, barrier height decreased and ideality factor increased, implying their strong temperature dependency. From the conventional Richardson plot, Richardson constant was much less than the theoretical value for n-type Ge. Assuming Gaussian distribution of Schottky barrier height with mean Schottky barrier height and standard deviation, Richardson constant extracted from the modified Richardson plot was comparable to the theoretical value for n-type Ge. Thus, the abnormal temperature dependent Schottky behavior of graphene/Ge SBD could be associated with a considerable deviation from the ideal thermionic emission caused by Schottky barrier inhomogeneities.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.375-375
• /
• 2012

Graphene is a sp2-hybridized carbon sheet with an atomic-level thickness and a wide range of graphene applications has been intensely investigated due to its unique electrical, optical, and mechanical properties. In particular, hybrid graphene structures combined with various nanomaterials have been studied in energy- and sensor-based applications due to the high conductivity, large surface area and enhanced reactivity of the nanostructures. Conventional metal-catalytic growth method, however, makes useful applications difficult since a transfer process, used to separate graphene from the metal substrate, should be required. Recently several papers have been published on direct graphene growth on the two dimensional planar substrates, but it is necessary to explore a direct growth of hierarchical nanostructures for the future graphene applications. In this study, uniform graphene layers were successfully synthesized on highly dense dielectric nanowires (NWs) without any external catalysts. We also demonstrated that the graphene morphology on NWs can be controlled by the growth parameters, such as temperature or partial pressure in chemical vapor deposition (CVD) system. This direct growth method can be readily applied to the fabrication of nanoscale graphene electrode with designed structures because a wide range of nanostructured template is available. In addition, we believe that the direct growth growth approach and morphological control of graphene are promising for the advanced graphene applications such as super capacitors or bio-sensors.