• Korean Journal of Environmental Agriculture
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• v.17 no.1
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• pp.59-64
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• 1998

The environmental problem of the rural area has been accelerated in soil as well as water. Soil contamination is usually caused by improper operation of landfills, abandoned mine fields, accidental spills, and illegal dumpings. Once soil contamination is initiated, pollutants migrate and may cause groundwater contamination which takes much effort for remediation. Early detection, therefore, is important to prevent further contamination. Electrical resistivity method was used to detect soil contamination, but it was not effective to the heterogeneous condition. Static cone penetrometer test (CPT) has been used widely to investigate geotechnical properties of the underground. In this study, electrical resistivity method and CPT are combined to improve the applicability of it. The pilot test was performed to examine the variation of electrical resistivity with different soil minerals and pore fluid characteristics. Soil samples used were poorly graded sand, silty sandy soil, and weathered granite soil. For all the cases, electrical resistivity decreased with increasing of moisture content. Soil mineral also affected the electrical resistivity significantly. Above all, leachate addition in the pore fluid was very sensitive and caused decreasing of electrical resistivity markedly. It implies that electrical resistivity method can be applied to investigate pollutant plume effectively. This is specially sure when the sensors contact the contaminated soils directly. The CPT method involves cone penetration to the ground, therefore, underground contamination around the cone could be investigated effectively even for heterogeneous condition as it penetrates if electrical resistivity sensors are attached on the cone.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.2
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• pp.170-177
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• 1992

Contact resistance and contact leakage current of the Al/TiSiS12T/Si system are investigated for NS0+T and PS0+T junctions. SALICIDE (Self Aligned Silicide) process was used to make the Al/TiSiS12T/Si system. Titanium disilicide is one of the most common silicides because of its thermal stability, ability to form selective formation and low resistivity. In this paper, RTA temperature effect and Junction implant dose effect were evaluated to characterize contact resistance and contact leakage current. The TiSiS12T contact resistance to NS0+T silicon is lower than that to PS0+T silicon, and TiSiS12T of contact leakage current to NS0+T silicon is lower than that to PS0+T silicon. Contact resistance and contact leakage current of the Al/TiSiS12T/Si system by this method were possible for VLSI application.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1572-1574
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• 2000

In this paper, study on the properties of the thermal degradated epoxy resin which is used in cast resin transformer is performed to investigate the problems of the decreasing insulation characteristics and crack in the cast resin transformer. In the test, contact angle, weight loss, surface resistivity and relative dielectric constant are measured. As the results of the above measurements, the epoxy resin has increased to 150$^{\circ}C$ in the contact angle and surface resistivity but at the above 150$^{\circ}C$ the values have decreased. The relative dielectric constants have increased in the thermal treated samples with the degradation temperature. Consequently, the insulation properties of the epoxy resin which is used in cast resin transformer have increased by the 150$^{\circ}C$ but decreased in the above 150$^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.342.1-342.1
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• 2014

The electrical, optical and structural properties of Ti doped $In_2O_3$ (TIO) ohmic contacts to p-type GaN were investigated using linear facing target sputtering (LFTS) system. Sheet resistance and resistivity of TIO films are decreased with increasing rapid thermal annealing (RTA) temperature. Although the $400^{\circ}C$ and $500^{\circ}C$ annealed samples showed rectifying behavior, the $600^{\circ}C$ and $700^{\circ}C$ annealed samples showed linear I-V characteristics indicative of the formation of an ohmic contact between TIO and p-GaN. The annealing of the contact at $700^{\circ}C$ resulted in the lowest specific contact resistivity of $9.5{\times}10^{-4}{\Omega}cm^2$. Based on XPS depth profiling and synchrotron X-ray scattering analysis, we suggested a possible mechanism to explain the annealing dependence of the properties of TIO layer on rapid thermal annealing temperature.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.2
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• pp.284-287
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• 2013

In this work, we have fabricated TiC films by using unbalanced magnetron sputtering method with graphite and Ti targets for contact strip application of electric railway. TiC films were deposited with various substrate temperatures. We investigated various properties of TiC films prepared with various substrate temperatures, such as the hardness, surface roughness, friction coefficient, resistivity, FESEM (Field Emission Scanning Electron Microscopy), HRTEM (High Resolution Transmission Electron Microscopy) and XPS (X-ray Photoelectron Spectroscopy). The hardness and friction coefficient properties of TiC films were improved with increasing substrate temperature. These results indicate that the improvement of hardness and resistivity is related to the increase of sp2 clusters in TiC films. And also, the resistivity value of TiC films were decreased with increasing substrate temperature.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1311-1312
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• 2006

This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using 4he C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}{\cdot}cm^2$ of was obtained due to the improved interfacial adhesion.

• Korean Journal of Materials Research
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• v.16 no.10
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• pp.629-632
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• 2006

Electrical characteristics of Pt/Ti/Pt/Au and Pd/Zn/Pd/Au contacts to p-type InGaAs grown on an InP substrate have been characterized as a function of the doping concentration and the annealing temperature. The Pt/Ti/Pt/Au contacts produced the specific contact resistance as low as $2.3{\times}10^{-6}{\Omega}{\cdot}cm^2$, when heat-treated at an annealing temperature of $400^{\circ}C$. Comparison of the Pt/Ti/Pt/Au and Ti/Pt/Au contacts showed that the first Pt layer plays an important role in reducing the contact resistivity probably by lowering energy barrier at the metal-semiconductor interface. For the Pd/Zn/Pd/Au contacts, the contact resistivity remained virtually unchanged with increasing annealing temperature. The specific contact resistivity as low as $4.7{\times}10^{-6}{\Omega}{\cdot}cm^2$ was obtained. The results indicate that the Pt/Ti/Pt/Au and Pd/Zn/Pd/Au schemes could be potentially important for the fabrication of InP-based optoelectronic devices, such as photodetector and optical modulator.

• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.75-78
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• 2002

In this paper, we investigated the change of wettability, surface potential decay and surface resistivity caused by thermal-treated and plasma-treated FRP respectively for finding out the influence of electrical characteristics on the surface of polymer composites. For the change of wettability, the contact angle of thermal-treated specimen with the high temperature of 200$^{\circ}C$ increased. But that of plasma-treated specimen decreased. The characteristic of surface potential decay shows the tendency of the remarkable decrease on plasma-treated specimens, but no difference on thermal-treated specimen compared with untreated one. Also, for the surface resistivity, it shows the same trend compared with the change of contact angle. We can conclude that the degradation phenomena of epoxy surface are dominated by the induction of hydrophilicity and hydrophobicity.

• Applied Science and Convergence Technology
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• v.26 no.1
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• pp.11-15
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• 2017

To improve the adhesion of Mo thin film as a back contact material, a DC magnetron sputtering system was used to deposit in the form of a bi-layer on soda-lime glass. Films with low resistivity and good adhesion were obtained from this deposition, even though the two qualities were found be hard to obtain at the same time. The best Mo bi-layer showed a resistivity of $8.13{\times}10^{-4}{\Omega}{\cdot}cm$ at $500^{\circ}C$ and $3.0{\times}10^{-3}\;Torr$. The XRD measurements showed that the crystallites of the films were mainly oriented in the (110) direction, the FE-SEM images revealed that the resistivity of the Mo films decreased with increasing substrate temperature, which temperature reduction is accompanied by an increase of the grain size. These experimental results were analyzed using the Fuchs-Sondheimer theory. Our Mo bi-layer film with better crystallinity and lower resistivity can be suitably used as a back-contact layer for CIGS solar cells.

• Proceedings of the Korean Geotechical Society Conference
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• 2010.03a
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• pp.607-614
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• 2010

Shear behavior of granular soils largely affects the safety and stability of underground and earth structures. This study presents the characteristics of shear zone in a direct shear test using shear wave and electrical resistivity measurements. An innovative direct shear box made of transparent acrylic material has been developed to prevent direct electric current. Bender elements and electrical resistivity probe are embedded in the wall of direct shear box to estimate the shear wave velocities and the electrical resistivity at the shear and non-shear zones. Experimental results show that the void ratio and shear wave velocity at shear zone increase during shearing while the values remain constant at non-shear zone. The results demonstrate correlation among the contact force, small strain shear modulus, and void ratio at shear zone. This study suggests that the application of the modified direct shear box including shear wave and electrical resistivity measurements may become an effective tool for analyzing soil behavior at shear zone.