• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.10
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• pp.157-162
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• 2010

Power line communication, using 25[kV] high voltage of railway catenary, is to provide information which is real-time safety information for train operations and train workers in driving. Lots of noise were occupied in the contact wire by electrical and communication equipments. A signal attenuation was caused characteristics of the contact wire and messenger wire. For relaying communications to transmit information using the contact wire, catenary the noise and signal attenuation were investigated. And the final goal of the study was realized to transmit video information by power line communication on electric railway.

• Journal of Electrical Engineering and Technology
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• v.9 no.2
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• pp.609-614
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• 2014

We fabricated amorphous zinc tin oxide (ZTO) transparent thin-film transistors (TTFTs). The effects of Al electrode on the mobility and threshold voltage of the ZTO TTFTs were investigated. It was found that the aluminum (Al)-ZTO contact decreased the mobility and increased the threshold voltage. Traps, originating from $AlO_x$, were assumed to be the cause of degradation. An indium tin oxide film was inserted between Al and ZTO as a buffer layer, forming an ohmic contact, which was revealed to improve the performance of ZTO TTFTs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.154-159
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• 1995

To achieve a high aspect ration of metal contact, buried contact solar cell scribe the silicon surface using laser. The Q-switched NdLYAG laser which has 1.064$\mu\textrm{m}$ wavelength use for silicon scribing with 25~40$\mu\textrm{m}$ width and 20~200$\mu\textrm{m}$ depth capabilities. The 2~3% shading losses are very low campared to the screen printing solar cell. In this paper, we investigate the silicon scribing theory and pratice, scribing system for BCSC processing.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.139-141
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• 2015

Contact resistance of interface between the channel layers and various S/D electrodes was investigated by transmission line method. Different electrodes such as Ti/Au, a-IZO, and multilayer of a-IGZO/Ag/a-IGZO were compared in terms of contact resistance, using the transmission line model. The a-IGZO TFTs with a-IGZO/Ag/a-IGZO of S/D electrodes showed good performance and low contact resistance due to the homo-junction with channel layer.

• Proceedings of the KIEE Conference
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• 2003.10b
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• pp.116-118
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• 2003

This paper describes a Accelerated Life Test (ALT) with the electrical contact erosion suitable to the evaluations of high-reliability and durability devices such as magnetic contactor. Recently, an electrical devices company was interested in accelerated life test (ALT), the product liability (PL) and the short-term testing model of electrical life test (ELT). In order to estimate a model for testing fee and period, need to the statistical analysis method with the acceleration factor(AF). Usually customer/manufacturer regard their device failure to the over-current or heavy duty condition, while devices view shape of contact erosion owing to operational duty problem. In this paper, additional method of evaluation estimated the operated cycles by weight of contact erosion with a used of regression analysis by MINITAB.

• Journal of the Korean Ceramic Society
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• v.54 no.1
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• pp.66-69
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• 2017

In this study, the fabrication and electrical properties of aligned single-walled carbon nanotube (SWCNT) networks using a template-based fluidic assembly process are presented. This complementary metal-oxide-semiconductor (CMOS)-friendly process allows the formation of highly aligned lateral nanotube networks on $SiO_2/Si$ substrates, which can be easily integrated onto existing Si-based structures. To measure outstanding electrical properties of organized SWCNT devices, interfacial contact resistance between organized SWCNT devices and Ti/Au electrodes needs to be improved since conventional lithographic cleaning procedures are insufficient for the complete removal of lithographic residues in SWCNT network devices. Using optimized purification steps and controlled developing time, the interfacial contact resistance between SWCNTs and contact electrodes of Ti/Au is reached below 2% of the overall resistance in two-probe SWCNT platform. This structure can withstand current densities ${\sim}10^7A{\cdot}cm^{-2}$, equivalent to copper at similar dimensions. Also failure current density improves with decreasing network width.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.115-115
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• 2010

This paper introduces a measurement system that measures behavior and electrical characteristics of overhead contact line irregular sections in real-time. For verification, we developed a prototype of the real-time overhead contact line irregular section behavior measurement system and a monitoring system for field tests. The current and temperature of contact wires and messenger wires were measured real-time by applying the system at KTX a commercial line. Therefore, acquiring data is possible with the developed system and this system that measures one of the fundamental and key factors, the catenary current, should be applicable to various areas such as detecting characteristics for designing overhead contact lines, enhancing speed, and enhancing energy.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.895-900
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• 1997

A Quench in cable-in-conduit (CIC) conductors is often initiated by a disturbance such as strand motion that generates a highly localized normal zone in a strand or a few strands of the CIC conductors. The localized normal zone causes current and heat transfer between a disturbed strand and neighboring strands. Electrical and thermal contact characteristics between strands thus have an effect on the transient stability of the CIC conductors. In this paper the effect of contact characteristics between strands on the CIC conductor stability is presented based on the measured heat transfer characteristics of supercritical helium (SHe) for the local heating. The quench and recovery processes of the strands for the abrupt and highly localized disturbance are analyzed at the boundary between quench and recovery.

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.263-269
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• 2007

Although variable resistance displacement transducer is widely applied for its technical simplicity, electrical point contact limits measurement resolution (precision). The present study introduced roller shaped structure for electrical line contact. Proto-type transducer was developed and measurement characteristics were compared with a commercialized product. When the displacement was varied with steps of 5 mm, 1 mm, and down to 0.1 mm, the correlation coefficient between resistance and displacement decreased lower than 0.9 in the commercialized product while the proto-type transducer maintained values higher than 0.99. Therefore, the measurement resolution was enhanced by approximately 10 times. Since manufacturing also seemed easier, the present results would enable more accurate and less expensive manufacturing of variable resistance displacement transducer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.313-316
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• 1998

Conjugated oligomers have been already used as active layers in field effect transistors, photodiodes and electroluminescent devices. Particularly thiophene oligomers such $\alpha$ -sexithiophene($\alpha$-6T) attract great interest for its prospective app1ications in large-area flexible displays. In this study, we investigated the contact properties between the organic semiconductor $\alpha$-6T and metals such as Au(Gold), Ag(Silver), Cr(Chromium), Al(Aluminum), Cr(Chromium). Using the Transmission Line Model(TLM) method, specific contact resistances of the metal lines in contact with the $\alpha$-6T were determined. From the current-voltage characteristics, electrical conductivity of the $\alpha$-6T films is found.