• Journal of Electrical Engineering and Technology
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• v.13 no.5
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• pp.1886-1900
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• 2018

This paper proposes a confronting feedback control structure and controllers for positive output elementary super lift Luo converters (POESLLCs) working in discontinuous conduction mode (DCM). The POESLLC offers the merits like high voltage transfer gain, good efficiency, and minimized coil current and capacitor voltage ripples. The POESLLC working in DCM holds the value of not having right half pole zero (RHPZ) in their control to output transfer function unlike continuous conduction mode (CCM). Also the DCM bestows superlative dynamic response, eliminates the reverse recovery troubles of diode and retains the stability. The proposed control structure involves two controllers respectively to control the voltage (outer) loop and the current (inner) loop to confront the time-varying ON/OFF characteristics of variable structured systems (VSSs) like POESLLC. This study involves two different combination of feedback controllers viz. the proportional integral controller (PIC) plus sliding mode controller (SMC) and the fuzzy logic controller (FLC) plus SMC. The state space averaging modeling of POESLLC in DCM is reviewed first, then design of PIC, FLC and SMC are detailed. The performance of developed controller combinations is studied at different working states of the POESLLC system by MATLAB-Simulink implementation. Further the experimental corroboration is done through implementation of the developed controllers in PIC 16F877A processor. The prototype uses IRF250 MOSFET, IR2110 driver and UF5408 diodes. The results reassured the proficiency of designed FLC plus SMC combination over its counterpart PIC plus SMC.

• Journal of the Optical Society of Korea
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• v.19 no.3
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• pp.272-276
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• 2015

The PbS quantum dot is an emerging photovoltaic material, which may provide high efficiency breakthroughs. The most crucial element for the high efficiency solar cells's development is to understand charge transport characteristics of PbS quantum dot solids, which are also important in planning strategic research. We have investigated charge transport characteristics of PbS quantum dot solids thin films using space charge limited conduction analysis and assessed thickness dependent photovoltaic performances. The extracted carrier drift mobility was $low-10^{-2}cm^2/Vs$ with the estimated diffusion length about 50 nm. These and recently reported values were compared with those from a commercial photovoltaic material, and we present an essential element in further development of PbS quantum dot solids materials.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.10
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• pp.123-130
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• 2016

High-frequency induction heating equipment can heat the metal by applying a High-Frequency power to the resonant circuit. The resonance circuit is composed of the work coil and the conduction-cooled power capacitor, it influences the performance of the heat treatment equipment according to the characteristics of the capacitor. However, dependence on conduction-cooled power capacitor's import is high due to lack of core technology research and development. Minimizing the generation of internal heat transmitted inside during LC resonance, reduce the reactive power loss, there is a need for a capacitor within the voltage characteristic outstanding. To implement localization it is vital that prior study of the analysis on the frequency response characteristic for the finished capacitor advanced manufacturer be implemented. Studying the interpolation method to read the value at any point of the characteristic curve for a given log-log scale was applied to the analysis tool of the capacitor by my proposed algorithm. The simulation for reproducing frequency response curves was attempted by assuming a capacitor in a simplified series equivalent RC circuit to obtain the equivalent series resistance value. It was confirmed that the reproduction rate was the result value above 83% as compared to the simulation of the properties and characteristics on the actual reactive power for Peak value, and that the algorithm can be applicable when analyzing and predicting the characteristic curves of a simpled model capacitor.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.1
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• pp.123-126
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• 2010

$Cu_2O$ nanoparticles-based films are fabricated by spin-coating on glass substrates and their optoelectronic characteristics are investigated in this study. The $Cu_2O$ films are nearly all-transparent as high as 98% in a wavelength range from 400 nm to 900 nm and three exciton peaks associated with the sublevels in the conduction band are observed at the wavelengths shorter than 400 nm in the absorption spectrum. Under the illumination of the 325 nm wavelength light, the photocurrent efficiency of the $Cu_2O$ film is $1.8\times10^5 {\mu}A/W$ at a voltage of 2.5 V in air.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.88-91
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• 2000

The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method. The crystallinity of SCT thin films is increased with increase of substrate temperature in the temperature range of 200~500$[^{\circ}C]$. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100$[^{\circ}C]$ can be divided into four characteristic regions with different mechanism by the increasing current.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.737-739
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• 1992

The microstructure and humidity sensitive characteristics of $V_2O_5$ doped $CaTiO_3$ were studied. Sensing elements were prepared in bulk form. This element exhibits a porous structure. The grain grows and electrical conductivity increases as doping amount of $V_2O_5$ increases. The change of impedance and capacitance under different r.h is remarkable, and the conduction carriers of this element were ions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.248-252
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• 1995

In this paper, the samples are made by the new three-composition seed grain method, in order to obtain the low voltage varistor distributed randomly large seed grain in its bulk. The oscillation phenomena of carriers appeared from current-voltage characteristics under knee voltage is shown by the transient flow of non trapped carriers group in the trap level of intergranular layer, surface state and/or depletion layer. Current oscillation phenomena is hardly shown in the high electric field. The injected carriers from both electrodes are directly flowed from the conduction band of forward biased grain through the intergranular layer into the reverse biased grain, because the trap level in the electric field above the knee voltage is mostly filled.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.44-50
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• 1993

In an attempt to improve the electrical characteristics of tantalum pentoxide dielectric film, silicon substrate was reacted with a nitrogen plasma to form a silicon nitride of 50.angs. and then tantalum pentoxide thin films were formed by reactive sputtering in the same chamber. Breakdown field and leakage current density were measured to be 2.9 MV/cm and 9${\times}10^{8}\;A/cm^{2}$ respectively in these films whose thickness was about 180.angs.. With annealing at rectangular waveguides with a slant grid are investigated here. In particular, 900.deg. C in oxygen ambient for 100 minutes, breakdown field and leakage current density were improved to be 4.8 MV/cm and 1.61.6${\times}10^{8}\;A/cm^{2}$ respectively. It turned out that the electrical characteristics could also be improved by oxygen plasma post-treatment and the conduction mechanism at high electric field proved to be Schottky emission in these double-layered films.

• 전자공학회논문지 IE
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• v.43 no.3
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• pp.1-5
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• 2006

[ $CaZrO_3$ ] humidity sensors were prepared using the solid-state synthetic method and their humidity sensitive characteristics have been investigated. It was found that the impedance of the humidity sensors decreased with increasing relative humidity and the humidity sensitivity depended on the applied frequencies. The sensitivity of sensor is stable with heat treatment and a negligible hysteresis under cyclic humidity changes is shown, and the activation energy for electrical conduction is reduced with water adsorption.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.437-440
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• 1999

The objective of this study is to deposited the preparation of SrTiO$_3$dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. It is demonstrated that the leakage current of films are strongly dependent on the substrate temperature. The current-voltage characteristics are influenced by the Schottky effict. The resistivity properties of films deposited on silicon substrates were very high resistivity. Conduction mechanisms in the films was dependent on the substrate temperature range.