• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.443-445
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• 2000

The high mobilitie sallow larger current to be reached under operation in the space charge limited conduction region, hence facilitate access to higher luminance as required for passive matrix panel. In this work, we have investigated the molecular alignment control effect of organic electroluminescent devices. we aligned the p-sexiphenyl(6p) using a simple rubbing treatment. We studied the anisotropic optical properties and electrical characteristics.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.48 no.8
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• pp.448-454
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• 1999

This paper describes a new dc-ac inverter system which for achieving sinusoidal ac waveform makes use of parallel loaded high frequency resonant inverter consisting of full bridge. Each one of the pair of switches in the inverter is driven to synchronous output frequency and the other is driven to PWM signal with resonant frequency proportional to magnitude of sine wave. A forced discontinuous conduction mode is used to realize the quasi-sinusoidal pulse in each switching period. Therefore the inverter generates sinusoidal modulated output voltage including carrier frequency that is resonant frequency. Carrier frequency components of modulated output voltage is filtered by low pass filter. Since current through switches is always zero at its turn-on in the proposed inverter, low stress and low switching loss is achieved. Operating characteristics of the proposed system is analyzed in per unit system using computer simulation. The output voltage of if includes low harmonics and it is almost close to sine wave. Also, the theoretical analysis is proved through the experimental test.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.327-331
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• 2016

Resistive random access memory (ReRAM) of metallic conduction channel mechanism is based on the electrochemical control of metal in solid electrolyte thin film. Amorphous chalcogenide materials have the solid electrolyte characteristic and optical reactivity at the same time. The optical reactivity has been used to improve the memory switching characteristics of the amorphous $As_2Se_3$-based ReRAM. This study focuses on the formation of holographic lattices patterns in the amorphous $As_2Se_3$ thin film for straight conductive channel. The optical parameters of amorphous $As_2Se_3$ thin film which is a refractive index and extinction coefficient was taken by n&k thin film analyzer. He-Cd laser (wavelength: 325 nm) was selected based on these basic optical parameters. The straighten conduction channel was formed by holographic lithography method using He-Cd laser.$ Ag^+$ ions that photo-diffused periodically by holographic lithography method will be the role of straight channel patterns. The fabricated ReRAM operated more less voltage and indicated better reliability.

• Progress in Superconductivity and Cryogenics
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• v.16 no.4
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• pp.62-65
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• 2014

To minimize most heat loss of current lead for high-temperature superconducting (HTS) rotating machine, the choice of conductor properties and lead geometry - such as length, cross section, and cooling surface area - are one of the various significant factors must be selected. Therefore, an optimal lead for large scale of HTS rotating machine has presented before. Not let up with these trends, this paper continues to improve of diminishing heat loss for HTS part according to different model. It also determines the simplification conditions for an evaluation of the main flux flow loss and eddy current loss transient characteristics during charging and discharging period.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.360-360
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• 2012

Zn-Sn-O (Zinc-Tin-Oxide; ZTO) thin films have been gaining extensive academic and industrial attentions owing to a semiconducting channel materials applicable to large-sized flat-panel displays. Due to the constituent oxides i.e., ZnO and SnO2, the resultant Zn-Sn-O thin films possess artificially controllable bandgaps and transmittances especially effective in the visible regime. The current approach employed RF sputtering in depositing the Zn-Sn-O thin films onto glass substrates at ambient conditions. This work places its main emphases on the electrical/optical features which are closely related to the combinations of processing variables. The electrical characterizations are performed using dc-based current-voltage characteristics and ac-based impedance spectroscopy. The optical constants, i.e., refractive index and extinction coefficient, are calculated through spectroscopic ellipsometry along with the estimation of bandgaps. The charge transport of the deposited ZTO thin films is based on electrons characteristic of n-type conduction. In addition to the basic electrical/optical information, the delicate manipulation of n-type conduction is indispensible in diversifying the industrial applications of the ZTO thin films as active devices in information and energy products. Ultimately, the electrical properties are correlated to the processing variables along with the underlying mechanism which largely determines the electrical and optical properties.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1016-1018
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• 1995

In this paper, we studied the electrical and the microwave properties of the amorphous $As_{10}Ge_{15}Te_{75}$ thin film. The electrical properties of a-$As_{10}Ge_{15}Te_{75}$ thin film were examined d.c. and a.c. bias with annealing condition. As the result of the electrical properties, we observed the physical characteristics of a-$As_{10}Ge_{15}Te_{75}$ thin film such as the density of defect states, characteristic relaxation time, localized density of states, and localized wave function by using CBH and QMT model. We also examined the microwave conduction properties before and after d.e. switching.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.184-189
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• 1995

The electrical property of ultra thin PVA films(several hundreds .angs.-several .mu.m in thickness) formed by sphere bulb blowing technique, has been studied. The electrical conductivity of relatively thick films(>several thousands .angs.) has been very high and enhanced by the exposure either to high humidity of air or $NH_3$, which can be explained in terms of the role of ionic transport. The use of PVA films as NH$_{3}$ sensor is also proposed. In ultra thin PVA films less than 1500.angs., two conducting states ; high conducting and low conducting states, are observed. The nonlinear current-voltage characteristics in the low conducting state and the switching between these two states are also confirmed. These properties are discussed in terms of electronic conduction processes. The breakdown strength of the ultra thin PVA film is found to be very high(-30MV/cm), supporting the electron avalanche process in a thick polymer films.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1055-1055
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• 2009

The mobility of charge carriers has been investigated in the pristine and phosphorescent materials doped host materials using time-of-flight photoconductivity technique. The field and temperature dependences of the mobility were analyzed with the Gaussian disorder model. Based on these results, we optimized white organic light emitting diodes (WOLEDs) consisting of multi-emitting layers doped with phosphorescent and fluorescent dopants. Especially, we studied the effect of each emitter position and an interlayer on the device characteristics of WOLEDs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.510-513
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• 2003

In this paper, we have investigated the physical, dielectric and electrical conduction properties of polyethylene terephthalate(PET) film due to temperature variation. From FT-IR spectrum as an analysis of physical properties, the strong absorption in wavenumber 1019[$cm^{-1}$], 1266[$cm^{-1}$], and 1752[$cm^{-1}$] observed by the C=O and benzene ring. the characteristics of volume resistivity used to highmegohm meter is measured from 1 to 10 minutes when the specimen applied the voltage according to the step voltage appling method. and dielectric characteristics were measured in the temperature range from room temperature to 120[$^{\circ}C$] due to frequency variation.. also we measured in the voltage rang of 1[V] to 20[V] according to the voltage application method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.816-825
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• 2003

Current-voltage-luminance characteristics of organic light-emitting diodes (OLEDs) were measured in the temperature range of 10 K～300 K. Indium-tin-oxide (ITO) was used as an anode and aluminum as a cathode in the device. Organic of N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) was used for a hole transporting material, and tris (8-hydroxyquinolinato) aluminum (Alq$_3$) for an electron transporting material and emissive material. And copper phthalocyanine (CuPc), poly(3,4-ethylenedi oxythiophene);poly(styrenesulfonate) (PEDOT:PSS), and poly(N-vinylcarbazole) (PVK) were used for hole-injection buffer layers. From tile analysis of electroluminescence (EL) and photoluminesccnce (PL) spectra of the Alq$_3$, the EL spectrum is more greenish then that of PL. And the temperature-dependent current-voltage characteristics were analyzed in the double and multilayer structure of OLEDS. Electrical conduction mechanism was explained in the region of high-electric and low-electric field. Temperature-dependent luminous efficiency and operating voltage were analyzed from the current-voltage- luminance characteristics of the OLEDS.