• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.745-750
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• 2000

The (S $r_{0.85}$C $a_{0.15}$) Ti $O_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/ $SiO_2$/Si) using RF sputtering method at various deposition temperature. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of 200~500[$^{\circ}C$]. Also, the composition of SCT thin films were closed to stoichiometry (1.080~1.111 in A/B ratio). V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100[$^{\circ}C$] can be divided into four regions with different mechanism by the increasing current. The region I below 0.8[MV/cm]shows the ohmic conduction. The region II between 0.9~2[MV/cm] is in proportion to J∝ $E^{1.5}$ , the region III between 2~4[MV/cm] can be explained by the Child’s law, and the region IV above 4[MV/cm]is dominated by the tunneling effect.ect.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.4
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• pp.562-567
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• 1996

A new lateral MOS controlled thyristor, named Shorted Anode LMCT(SA-LMCT), is proposed and analyzed by a two-dimensional device simulation. The device structure employs the implanted n+ layer which shorts the p+ anode together by a common metal electrode and provides a electron conduction path during turn-off period. The turn-off is achieved by not only diverting the hole current through the p+ cathode short but also providing the electron conduction path from the n-base into the n+ anode electrode. In addition, the modified shorted anode LMCT, which has an n+ short junction located inside the p+ anode junction, is also presented. It is shown that the modified SA-LMCT enjoys the advantage of no snap-back behavior in the forward characteristics with little sacrificing of the forward voltage drop. The simulation result shows that the turn-off times of SA-LMCT can be reduced by one-forth and the maximum controllable current density may be increased by 45 times at the expense of 0.34 V forward voltage drop as compared with conventional LMCT. (author). 11 refs., 6 figs., 1 tab.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.4
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• pp.612-615
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• 2015

This paper proposed an high-speed superconducting fault current limiter (H-SFCL). The proposed H-SFCL functioned the initial fault current could be covered by the SFCL and the continued fault current after the one-cycle from fault occurrence could be controlled current-limiting-element of the normal conduction. To investigate the operation characteristics of the H-SFCL, a simulation power system was constructed, and a single line-to-ground fault was occurred. As a result, the H-SFCL limited the fault current by more than about 70%, and it was confirmed that the electric power burden was reduced compared to the SFCL that consisted only of superconductors.

• Journal of Biomedical Engineering Research
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• v.38 no.6
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• pp.313-320
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• 2017

Myocardial infarction is a disease caused by stenosis of the coronary arteries. The high risk of sudden cardiac death due to myocardial infarction has triggered related researches that have been actively studied so far. However, these studies focused on the clinical results, which are mainly based on observations of symptoms due to infarction through electrocardiograms. Therefore, in this study, we tried to analyze the behavior of heart according to the position and volume of infarction lesion through the computer simulation study using three dimensional ventricular models. In order to implement infarction, commercial software was used to simulate cell necrosis due to blockage of a specific coronary. In addition, the conduction block due to infarction was mimicked by reducing the electrical conduction in the infarcted area, which was 100 times less than the electrical conduction of the whole ventricular lattice implemented by the finite element analysis method. Thus, this study classified the infarcted cases into the upper, middle, lower, and apex according to lattice data of eight different infraction areas. In other words, we assumed that myocardial infarction would have inherent electro-dynamic characteristics depending on the location and extent, and analyzed the ventricular electromechanical responses for infarction lesions using a three dimensional cardiac physiome model. The results showed that the volume of infarction did not directly affect the cardiac responses, but the location of the infarction lesions could influence the ventricular pumping efficiency. These suggest that the occlusion of specific coronary arteries may have a fatal effect on the decline in ventricular performance. In conclusion, although location of myocardial infarction lesions is considered to be an important variable to be considered clinically rather than lesion size, quantitative predictions should be made more in the future considering physiological factors such as lesion location and direction of myocardial fiber at that location.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.36 no.6
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• pp.418-423
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• 1987

In the course of the investigation to the field dependent electrical conducation mechanism in polypropylene, an abnormal conduction phenomena such as voltage controlled negative resistance charateristics has been observed at the junction of two regions charateriged by schottky effect and space charge effect respectively. This abnormal characteristics was observed initially about 110MV / m of the field strength and at 25 , however, the field strength where it observed was decreased and the apparent feature of negative charateristics was less pronounced as increasing ambient temperature. Although the observations of analogous characteristics in other materials such as polyethylene, polymethylemethactylate, and polystyrene have already been reported together with plausible explanation by Toureille and others, however, it was found that the proposed concept by those authors was little use to the present observations for quantitative discussions. Accordingly we tried to adapt another conceptual discussion based on Gibbons's formulation pertaing to the saturatio trend of the field dependent drift velocity of carriers towards the thermal velocity corresponding to the ambient temperature so that the quantitative explanatio on the observed facts has been succeeded to some estent of reasonable acceptance.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.6
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• pp.827-832
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• 2012

The crosslinked polyethylene (XLPE) is the most widely used insulating material for power cable. Due to its thermosetting characteristics, the XLPE can not be recycled, while the needs for the environmental friendly and recyclable insulator is rapidly increasing. In this paper, some important and basic electrical properties of non-crosslinked polyethylene such as conduction current characteristics, water the tree characteristics, AC breakdown test were experimentally investigated. It was shown that some of the tested samples had better performances from the application point of view for replacing current XLPE.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.533-534
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• 2005

Temperature-dependent current-voltage characteristics of organic light-emitting diodes(OLEDs) were studied in a device structure of ITO/TPD/$Alq_3$/Al. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-l,1'-diphenyl-4,4'-diamine(TPD) as a hole transport and tris(8-hydroxyquinoline) aluminum($Alq_3$) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10K and 300K. We analyzed an electrical conduction mechanism of the OLEDs using space-charge-limited current(SCLC) and Fowler-Nordheim tunneling.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.52-57
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• 1995

An accurate and efficient single-integral semi-numerical model is developed and applied to analyse effects of localized electronic states in the mobility gap on the drain-current versus gale-voltage characteristics of hydrogenated amorphous field-effect transistors. It is shown that the low-density deep-gap states distributed in the midgap also sensitively and largely influence the device electronic performance as well as well as the large-density tail states distributed near the conduction band edge.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.4
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• pp.541-546
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• 1990

The current conduction and dielectric breakdown properties of oxide grown on phosphorous-doped polysilicon have been investigated by means of the ramped I-V measurements. The effective barrier heights of polyoxide grown by different silicon deposition and oxidation conditions were calculated from the Fowler-Nordheim tunneling characteristic. The average critical fields were also obtained for each film. From the results, the high temperature oxided polyoxide grown on amorphous silicon film shows superior electrical characteristics comparing to the other films.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1998.11a
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• pp.120-124
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• 1998

In this paper, new zero voltage and zero current switched PWM(Pulse Width Modulated) converters are suggested. The main and auxiliary switch of the converters satisfy soft switching conditions, which are zero voltage or zero current switching of the switches. The switching characteristics of the proposed converters are experimentally verified by boost typed converter, which has 250 kHz switching frequency. For the 250 kHz operation, turn on period of auxiliary switch is about 1/40 for switching period of 4 ${\mu}\textrm{s}$. Therefore, the conduction loss of auxiliary switch is reduced.