• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.38-41
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• 2002

We have investigated current-voltage-luminance characteristics of organic light-emitting diodes based on TPD/Alq$_3$organics depending on the application of forward-backward bias voltage. Luminance-voltage characteristics and luminous efficiency were measured at the same time when the current-voltage characteristics were measured. We have observed that the current-voltage characteristics shows a reversible current maxima at low voltage, which is possibly not related to the emission from Alq$_3$. Current-voltage-luminance characteristics imply that the conduction luminance mechanism at low voltage is different from that of high voltage one.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.63-66
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• 1992

Using an aromatic system, we made a ultra thin insulator through LB-method. We measured and wrote down afternating currant characteristics of ultraviolet rays extincting-spectrum and I.R extincting-spectrum. We surveyed the thickness of a film through X-ray diffracting method and certified about $4{\AA}$ by the layer. Measuring the characteristics of direct current voltage and electric current with this sample, we produced its conductivity and discovered that this sample had a god insulating performance. Addition to this, we measured the characteristics of voltage and electric current, and the temperature dependency of conductivity in a high voltage system and with these results tried to interpret a mechanism of conduction.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1471-1472
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• 2011

최근 경재적인 한계를 드러내고 있는 실리콘 태양전지의 대안으로 주목받고 있는 염료감응형 태양전지는 식물의 광합성 원리에 기초하여 빛이 입사하면 염료 분자가 포톤을 흡수해 여기하면서 전자를 방출함으로써 기전력을 발생시키는 원리로 동작한다. 염료에서 발생된 전자는 $TiO_2$의 conduction band로 주입되어 확산을 통해 TCO 기판으로 이동한다. 이때 다공성 나노구조의 $TiO_2$ 표면과 전해질의 접촉이 발생하게 되고 이로 인해 $TiO_2$ conduction band의 전자와 전해질의 $I_3{^-}$ 간의 재결합이 발생하게 되는데 이것은 DSC의 기능을 저하시키는 요인 중의 하나이다. 이러한 문제점은 $Al_2O_3$, ZnO, MgO, $BaTiO_2$ 등의 표면처리에 의한 core-shell 나노구조를 형성함으로써 해결할 수 있다. 본 연구에서는 aluminum isopropoxidee와 magnesium chloride 혼합 용액을 사용하여 core-shell 나노구조를 형성하여 셀을 제작하고, 완성된 셀의 출력특성과 내부 임피던스의 변화를 측정, 분석함으로써 단일 용액을 사용하였을 때에 비해 효과적인 재결합 감소와 광전압의 상승효과를 확인할 수 있었다.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1469-1471
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• 1996

In this paper, We intended to evaluate the characteristics of XLPE/EPDM interface which exists in the cable joint. The fault of practical cable was mainly occurred in this interface. Thus we looked into the electrical characteristics through the conduction current and the breakdown test. Through the experiment, we obtained the result that the conduction current in this interface flowed less than other dielectric materials, that the breakdown strength was higher and that the pressure dependance of the breakdown strength was higher.

• Electrical & Electronic Materials
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• v.12 no.8
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• pp.39-45
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• 1999

Comparative photoresponsive current-volt-age characteristics of n-channel PHEMT and MESFET on GaAs substrate. with (W/L)=200${\mu}{\textrm}{m}$/1${\mu}{\textrm}{m}$ of gates, are reported as a function of electro-optical stimulation (P\ulcorner, λ=830nm) for the first time as far as we know. Significantly different photoresponses are observed in MESFET and PHEMT, mainly due to different optoelectronic mechanisms in the formation and current conduction of channel carriers. Under high optical power, high photoresponsity with a strong non-linearity with P\ulcorner, predominantly due to a parallel conduction via a heavily doped Al\ulcornerGa\ulcornerAs donor layer, was observed in PHEMT while the optically induced drain current has been very small but monotonically increasing with optical stimulation in GaAs MESFET. We also investigated differences in optically stimulated gate leakage currents and photonic gate responses on gate voltage and drain voltage as a function of P\ulcorner. Based on the drain and gate responses to electro-optical stimulation. PHEMTs are expected to be a better candidate for high performance photonically responsive microwave device compared with MESFETs.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.191-193
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• 1991

In this paper, we introduce silicon dioxide films deposited by Laser CVD, and evaluate the breakdown characteristics of these films by TZDB(Time Zero Dieiectric Breakdown) and TDDB(Time Dependent Dielectric Breakdown) test, failure times against eletric field are examined and accelation factors ${\beta}$ are obtained, and also, long term reliability is described by examining TDDB under positive voltage bias, all the above results are compared with PECVD(Plasma Enhanced CVD) $SiO_2$ breakdown, data, as a result, it is shown that the breakdown characteristics of Laser CVD $SiO_2$ films is improved.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.1
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• pp.23-29
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• 2005

This paper presents the characteristics of leakage currents flowing through ZinC Oxide(ZnO) surge arrester blocks under mixed direct and 60 Hz alternating voltages. A mixed voltage, in which an alternating voltage is superimposed upon a direct voltage, appears on the HVDC system network. The mixed direct and alternating voltage generator with a peak open-circuit of 10 kV was designed and fabricated. The leakage currents and V-I curves for the fine and used ZnO surge arrester blocks were measured as a function of the voltage ratio k, where the voltage ratio k is defined as the ratio of the peak of alternating voltage to the peak of the mixed voltages. The resistive component in the leakage current in the low conduction region is significantly increased with increasing the voltage ratio k. The V-I characteristic curves for the mixed voltages lies between the direct and alternating characteristics, and the cross-over phenomenon in the high conduction region was appeared.

• International journal of advanced smart convergence
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• v.8 no.4
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• pp.138-146
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• 2019

In this paper, we proposed a soft-switched synchronous buck converter, which can perform charging the battery. The proposed converter has low switching loss even at high frequency operation due to its soft switching characteristics. The converter operates in synchronous mode to minimize conduction loss, resulting in small conduction loss, also. In this reason, the efficiency of the converter can be greatly improved even in high frequency. The size and weight of the converter can be reduced by high frequency operation of the converter. In this paper, we designed a battery charger with a switching frequency of 100 kHz. The designed converter also simulated to prove the converter's characteristics of synchronous operation as well as soft switching operation. The simulation shows that the proposed converter always meets the soft switching conditions of turning on and off switching in the zero voltage and zero current states. Therefore, simulation results have confirmed that the proposed battery charger had soft switching characteristics. The simulation results for transient response to charge current for the designed converter show that the converter responds to charge current commands quickly within 0.05 ms.

• Proceedings of the KIEE Conference
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• 2001.07b
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• pp.977-979
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• 2001

The application of SRM(Switched Reluctance Motor) is dramatically increasing due to a simple mechanical structure, high efficiency and a good high speed characteristics. Generally, turn-off angle of power switch must be limited the demagnetization period. To control high conduction ratio in motor operation and regenerative voltage in the generator operation in the SRM, multi-level voltage control is effective. This paper proposes multi-level inverter to have a maximum conduction ratio of SRM. The proposed method is verified by experiment.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.319-325
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• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.