• Journal of Sensor Science and Technology
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• v.15 no.2
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• pp.127-133
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• 2006

Recent studies demonstrated the ability of carbon nanotube (CNT) to promote electron transfer reactions of important compounds and to impart higher stability onto electrochemical sensors. CNT-based sensors measured by hydroxyl radical concentration or pH value suggest great promise for biosensors. This paper describes a new method for fabricating a very simple and inexpensive pH sensor compose of single walled-carbon nanotubes (SW-CNTs) using an ultra-precision spray. CNT-based sensor shows pH sensitivity in buffer solution at different pH range. Our experimental results show the sensor responses to pH buffer solution and the conductance of depends on the pH values. These results support application possibility of SW-CNTs based pH sensor for mass production.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.2
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• pp.9-18
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• 2014

This paper proposes the fuzzy PI controller for maximum power point tracking(MPPT) control of photovoltaic system. The output characteristics of the solar cell are a nonlinear and affected by a temperature, the solar radiation. The MPPT control is a very important technique in order to increase an output and efficiency of the photovoltaic system. The conventional perturbation and observation(PO) and incremental conductance(IC) are the method which finding maximum power point(MPP) by the continued self-excitation vibration, and uses the fixed step size. If the fixed step size is a large, the tracking speed of maximum power point is faster, but the tracking accuracy in the steady state is decreased. On the contrary, when the fixed step size is a small, the tracking accuracy is increased and the tracking speed is slower. Therefore, this paper proposes the MPPT control using the fuzzy PI controller that can be improve a MPPT control performance. The fuzzy PI controller is adjusted a input of PI controller by fuzzy control and compensated a cumulative error of fuzzy control by PI controller. The fuzzy PI MPPT control is compared to conventional PO and IC MPPT method for various temperature and radiation condition. This paper proves the validity of the fuzzy PI controller using these results.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.10
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• pp.1796-1801
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• 2008

In this paper, a new current based maximum power point tracking (CMPPT) method is proposed for a single phase photovoltaic power conditioning system and the current based MPPT modifies incremental conductance method. The current based MPPT method makes the entire control structure of the power conditioning system simple and uses an inherent current source characteristic of solar cell array. In addition, digital phase locked loop using an all pass filter is introduced to detect phase of grid voltage as well as peak voltage. Controllers about dc/dc boost converter, dc-link voltage, dc/ac inverter is designed for a coordinated operation. Furthermore, PI current control using a pseudo synchronous d-q transformation is employed for grid current control with unity power factor. 3kW prototype photovoltaic power conditioning system is built and its experimental results are given to verify the effectiveness of the proposed control schemes.

• Journal of Korean Ophthalmic Optics Society
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• v.2 no.1
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• pp.103-110
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• 1997

This work presents experimental results on the electrical properties of hydrogenated amorphous carbon films(a-C : H) prepared by PECVD. Conductance of a-C: H was measured as a function of temperatures in the range of 100 to 423K. We studied two a -C: H films: one was well explanied by the Mott's variable range hopping(VRH) rule. But the other sample did not follow it. The conduction data of second sample were well fitted to Shimakawa's multi-phonon hopping(MPH) model according to which conductivity is proportional to Tm with m= 15~17. But, in our samples, m was 10~12.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.153-162
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• 2014

We show that carbon nanotube sensors with gold particles on the single-walled carbon nanotube (SWNT) network operate as Schottky barrier transistors, in which transistor action occurs primarily by varying the resistance of Au-SWNT junction rather than the channel conductance modulation. Transistor characteristics are calculated for the statistically simplified geometries, and the sensing mechanisms are analyzed by comparing the simulation results of the MOSFET model and Schottky junction model with the experimental data. We demonstrated that the semiconductor MOSFET effect cannot explain the experimental phenomena such as the very low limit of detection (LOD) and the logarithmic dependence of sensitivity to the DNA concentration. By building an asymmetric concentric-electrode model which consists of serially-connected segments of CNTFETs and Schottky diodes, we found that for a proper explanation of the experimental data, the work function shifts should be ~ 0.1 eV for 100 pM DNA concentration and ~ 0.4 eV for $100{\mu}M$.

• Electrical & Electronic Materials
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• v.10 no.3
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• pp.233-238
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• 1997

We have investigated gas-detection characteristics of CuTBP (Copper-tetra-tert-butylphthalocyanine) chemiresistor devices exposed to air/200ppm N $O_{2}$ gases. The CuTBP films were made by Langmuir-Blodgett (LB) techniques. Sensitivity, response time, recovery time, and reproducibility of the devices were measured by current voltage characteristics. Interdigital electrode was used to improve the sensitivity. It was observed that a conductance G increases monotonically as the number of interdigital electrode finger pairs increases. As the number of interdigital electrode finger pairs increases, the sensitivity S( $G_{gas}$/ $G_{air}$) increases more than 50 times and stable. But the response time was delayed. The average recovery time of the CuTBP chemiresistor devices turned out to be about 100 second. We have also investigated applicability of the CuTBP chemiresistor device for a gas sensor.sor.

• Journal of Welding and Joining
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• v.32 no.5
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• pp.80-86
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• 2014

We have successfully fabricated high strengthening Cu/STS/Cu 3 layered clad metal of $70kgf/mm^2$ grade for electric device lead frame, and investigated thermal effect of the mechanical and physical properties on the Cu/STS/Cu 3 layered clad metal lead frame material at different temperatures ranging from RT to $200^{\circ}C$. The fabricated clad metal shows a good thermal stability under 6% degrading of mechanical tensile strength and hardness change at $200^{\circ}C$ and also physical properties show stable thermal and electrical conductance of over $220W/m{\cdot}K$ and 58.44% IACS upto the $200^{\circ}$. The results confirm that fabricated high strengthening Cu/STS/Cu 3 layered clad metal can be applied for the high performed electrical lead frame devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.222-229
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• 2009

A noble infrared sensor was studied for passenger conditional detection in vehicle, This research relates to uncooled infrared sensors for detecting the presence, type and temperature of occupants in vehicle. It sense that the occupants purpose to control the smart airbag for safety in the case of adult or child and to control the automatic air conditioning for convenience. This paper described the design and the fabrication of microbolometers which were composed of 2 by 8 elements using the surface micromachining technology. The characteristics of the array were investigated in the spectral region of $8{\sim}12{\mu}m$. The fabricated detectors exhibited the thermal mass of $7.05{\times}10^{-9}\;J/K$, the thermal conductance of $1.03{\times}10^{-6}\;W/K$, the thermal time constant of 6.8 ms, the responsivity of $2.96{\times}10^4\;V/W$ and the detectivity of $1.01{\times}10^9\;cmHz^{1/2}/W$, at the chopper frequency of 10 Hz and the bias current of $4.4{\mu}A$. We could successfully detect the human body condition in the divided zone. As a results, we concluded that microbolometer optimized in this research could be useful for the application of passenger conditional detection in vehicle.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.5
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• pp.72-79
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• 2009

Solar energy is desirable due to its renewable and pollution-free properties. In order to utilize the present utility grid infrastructure for power transmission and distribution, a do-dc boost converter and grid connected dc-to-ac inverters are needed for solar power generation. The dc-dc boost converter allows the PV system to operate at high do-link voltage. The single-phase inverter provides the necessary voltage and frequency for interconnection to the grid. In this paper, first, current loop transfer function of a single-phase grid-tie inverter has been systematically derived Second the MPPT of conductance increment method at converter side is proposed to supply the maximum power to the inverter side. Simulation results are shown to access the performance of PV system and its behaviour at the interconnection point.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.377-377
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• 2014

We demonstrate the high temperature-dependent electrical behavior at 2D multilayer MoS2 transistor. Our previous reports explain that the extracted field-effect mobility of good device was inversely proportional to the increase of temperature. Because scattering mechanism is dominated by phonon scattering at a well-designed MoS2 transistor, having, low Schottky barrier. However, mobility at an immature our $MoS_2$ transistor (${\mu}m$ < $10cm^2V^{-1}s^{-1}$) is proportional to the increase temperature. The existence of a big Schottky barrier at $MoS_2-Ti$ junction can reduce carrier transport and lead to lower transistor conductance. At high temperature (380K), the field-effect mobility of multilayer $MoS_2$ transistor increases from 8.93 to $16.9cm^2V^{-1}sec^{-1}$, which is 2 times higher than the value at room temperature. These results demonstrate that carrier transport at an immature $MoS_2$ with a high Schottky barrier is mainly affected by thermionic emission over the energy barrier at high temperature.