• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.196-196
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• 2012

Graphene, two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, has grabbled appreciable attention due to its extraordinary mechanical, thermal, electrical, and optical properties. Based on the graphene's high carrier mobility, high frequency graphene field effect transistors have been developed. Graphene is useful for photonic components as well as for the applications in electronic devices. Graphene's unique optical properties allowed us to develop ultra wide-bandwidth optical modulator, photo-detector, and broadband polarizer. Graphene can support SPP-like surface wave because it is considered as a two-dimensional metal-like systems. The SPPs are associated with the coupling between collective oscillation of free electrons in the metal and electromagnetic waves. The charged free carriers in the graphene contribute to support the surface waves at the graphene-dielectric interface by coupling to the electromagnetic wave. In addition, graphene can control the surface waves because its charge carrier density is tunable by means of a chemical doping method, varying the Fermi level by applying gate bias voltage, and/or applying magnetic field. As an extended application of graphene in photonics, we investigated the characteristics of the graphene-based plasmonic waveguide for optical signal transmission. The graphene strips embedded in a dielectric are served as a high-frequency optical signal guiding medium. The TM polarization wave is transmitted 6 mm-long graphene waveguide with the averaged extinction ratio of 19 dB at the telecom wavelength of $1.31{\mu}m$. 2.5 Gbps data transmission was successfully accomplished with the graphene waveguide. Based on these experimental results, we concluded that the graphene-based plasmonic waveguide can be exploited further for development of next-generation integrated photonic circuits on a chip.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.388-388
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• 2011

Graphene, with its unique physical and structural properties, has recently become a proving ground for various physical phenomena, and is a promising candidate for a variety of electronic device and flexible display applications. The physical properties of graphene depend directly on the thickness. These properties lead to the possibility of its application in high-performance transparent conducting films (TCFs). Compared to indium tin oxide (ITO) electrodes, which have a typical sheet resistance of ~60 ${\Omega}/sq$ and ~85% transmittance in the visible range, the chemical vapor deposition (CVD) synthesized graphene electrodes have a higher transmittance in the visible to IR region and are more robust under bending. Nevertheless, the lowest sheet resistance of the currently available CVD graphene electrodes is higher than that of ITO. Here, we report an ingenious strategy, irradiation of MeV electron beam (e-beam) at room temperature under ambient condition,for obtaining size-homogeneous gold nanoparticle decorated on graphene. The nano-particlization promoted by MeV e-beam irradiation was investigated by transmission electron microscopy, electron energy loss spectroscopy elemental mapping, and energy dispersive X-ray spectroscopy. These results clearly revealed that gold nanoparticle with 10~15 nm in mean size were decorated along the surface of the graphene after 1.0 MeV-e-beam irradiation. The fabrication high-performance TCF with optimized doping condition showed a sheet resistance of ~150 ${\Omega}/sq$ at 94% transmittance. A chemical transformation and charge transfer for the metal gold nanoparticle were systematically explored by X-ray photoelectron spectroscopy and Raman spectroscopy. This approach advances the numerous applications of graphene films as transparent conducting electrodes.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.126-126
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• 2018

최근 차세대 디스플레이인 flexible 하고 transparent 한 디스플레이 개발이 진행 중 이며, 이러한 디스플레이가 개발 되기 위해 백 플레인으로 사용되는 Thin Film Transistor (TFT) 또한 차세대 디스플레이 못지 않게 연구가 진행 되고 있다. 기존의 무기물을 기반으로 하고 Rigid한 TFT는 현재 많은 곳에 적용이 되어 사람들이 사용 하고 있다. 하지만 이미 시장은 포화상태이며 차세대 디스플레이 컨셉인 flexible 하고 투명한 것과 맞지 않는다. 그래서 유연하며 투명한 특성을 가진 TFT에 대한 연구가 활발히 진행 되고 있으며 많은 성과를 이루었다. 이러한 소자를 이용하여 훗날 Electronic-skin(e-skin)이라 부르는 전자 피부를 활용하여 실시간 모니터링 할 수 있는 헬스 케어 분야 등에 활용 가치 또한 높다. 현재 유연하며 투명한 기판 및 물질 개발에 많은 연구 개발이 진행 되고 있다. 하지만 유연한 기판을 사용하여 TFT를 제작한 후 stress나 bending에 대한 내구성과 안정성, 신뢰성 등이 무기물을 기반으로 한 TFT에 비해 좋지 않은 실정이다. 따라서 유연하며 투명한 기판을 사용한 TFT에 대한 안정성, 신뢰성 등을 확보하여야 한다. 본 연구 에서는 유연한 기판을 사용하여 TFT를 제작 한 후, TFT특성과 안정성을 확보하는 것을 목표로 실험을 진행하였다. 우리는 Mo전극과 Parylene 기판을 사용하여 유연한 TFT소자를 탑 게이트 구조로 제작 하였고 Rigid한 Glass기판 위에 Floating Process를 진행하기 위해 PVA층을 코팅 후 그 위에 Parylene을 CVD로 증착 하고 IGZO를 Sputter를 사용해 증착했다. Parylene은 DI Water 70도에서 Floating 공정을 통해 Rigid 기판에서 탈착 시켰다. 유연한 기판 위에 TFT를 제작 후 bending에 대한 특성 변화 및 안정성에 대한 측정을 실시하였다. Bending에 대한 특성 변화는 우수한 결과가 나왔지만 안정성 측정 중 Negative Bias Stress(NBS) 상에서 비정상적인 On Current Drop 현상이 발생 되었다. Parylene과 Channel층 사이 interface roughness로 인해 charge trap이 되고 이로 인해 On Current Drop 이라는 현상으로 나타났다. 그래서 우리는 Parylene 기판과 Channel 층간의 surface roughness를 개선하기 위한 방법으로 UV Treatment를 사용하였고 시간을 다르게 하여 surface 개선을 진행했다. Treatment 시간을 증가 시킴에 따라 Surface roughness가 많이 좋아 졌으며, Surface를 개선하고자 비정상적인 On Current Drop 현상이 없어졌으며 위 실험으로 Polymer의 surface roughness에 따라 TFT에 대한 안정성에 대한 신뢰성이 확보 될 수 있는 것을 확인 하였다.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1203-1204
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• 2006

Recently, utility network is getting more and more complicated and huge. In addition to, demands of power conversion devices which have non-linear switching devices are getting more and more increased. Consequently, according to the non-linear power semiconductor devices, current harmonics are unavoidable. Those current harmonics flow back to utility network and become one of the reasons which make the voltage distortion. On the other hands, voltage sag from sudden increasing loads is also one of the terrible problems inside of utility network. In order to compensate the current harmonics and voltage sag problem, AF(Active Filter) systems could be a good solution method and SMES(Superconducting Magnetic Energy Storage) system is a very good promising source due to the high response time of charge and discharge. Therefore, the combined system of AF and SMES is a wonderful device to compensate both harmonics current and voltage sag. However, unfortunately SMES needs a superconducting magnetic coil. Because of the introduction of superconducting magnetic coil, quench problem caused by unexpected reasons is always existed. In case of discharge operation, quench is a significantly harmful factor according as it decreases the energy capacity of SMES. Therefore, this paper presents a decision method of the specification of the AF-SMES system considering internal fault condition. Especially, authors analyzed the change of the original energy capacity of SMES regarding to the size of resistance caused by quench of superconducting magnetic coil. Finally, based on this simulation, authors manufactured actual Active Filter System using DSP.

• Membrane Journal
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• v.13 no.1
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• pp.37-46
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• 2003

The electrokinetic effect can be found in cases of the fluid flowing across the charged membrane micropores. The externally applied body force originated from the electrostatic interaction between the nonlinear Poisson-Boltzmann field and the flow-induced electrical field is taken into the equation of motion. The electrostatic potential profile is computed a priori by applying the finite difference scheme, and an analytical solution to the Navier-Stokes equation of motion for slit-like pore is obtained via the Green's function. An explicit analytical expression for the flow-induced streaming potential is derived as functions of relevant physicochemical parameters. The influences of the electric double layer, the surface potential of the wall, and the charge condition of the pore wall upon the velocity profile as well as the streaming potential are examined. With increasing of either the electric double layer thickness or the surface potential, the average fluid velocity is entirely reduced, while the streaming potential increases.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.499-499
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• 2011

Silicon nanowires (Si NWs) have been extensively studied for nanoelectronics owing to their unique optical and electrical properties different from those of bulk silicon. For the development of Si NW devices, better understanding of oxidation behavior in Si NWs would be an important issue. For example, it is widely known that atomic scale roughness at the dielectric (SiOx)/channel (Si) interface can significantly affect the device performance in the nano-scale devices. However, the oxidation process at the atomic-scale is still unknown because of its complexity. In the present work, we investigated the oxidation behavior of Si NW in atomic scale by simulating the dry oxidation process using a reactive molecular dynamics simulation technique. We focused on the residual stress evolution during oxidation to understand the stress effect on oxidation behavior of Si NWs having two different diameters, 5 nm and 10 nm. We calculated the charge distribution according to the oxidation time for 5 and 10 nm Si NWs. Judging from this data, it was observed that the surface oxide layer started to form before it is fully oxidized, i.e., the active diffusion of oxygen in the surface oxide layer. However, it is well-known that the oxide layer formation on the Si NWs results in a compressive stress on the surface which may retard the oxygen diffusion. We focused on the stress evolution of Si NWs during the oxidation process. Since the surface oxidation results in the volume expansion of the outer shell, it shows a compressive stress along the oxide layer. Interestingly, the stress for the 10 nm Si NW exhibits larger compressive stress than that of 5 nm Si NW. The difference of stress level between 5 an 10 anm Si NWs is approximately 1 or 2 GPa. Consequently, the diameter of Si NWs could be a significant factor to determine the self-limiting oxidation behavior of Si NWs when the diameter was very small.

• Korean Journal of Materials Research
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• v.25 no.6
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• pp.279-287
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• 2015

In order to prepare anode materials for high power lithium ion secondary batteries, carbon composites were fabricated with a mixture of petroleum pitch and coke (PC) and a mixture of petroleum pitch, coke, and natural graphite (PC-NG). Although natural graphite has a good reversible capacity, it has disadvaantages of a sharp decrease in capacity during high rate charging and potential plateaus. This may cause difficulties in perceiving the capacity variations as a function of electrical potential. The coke anodes have advantages without potential plateaus and a high rate capability, but they have a low reversible capacity. With PC anode composites, the petroleum pitch/cokes mixture at 1:4 with heat treatment at $1000^{\circ}C$ (PC14-1000C) showed relatively high electrochemical properties. With PC-NG anode composites, the proper graphite contents were determined at 10~30 wt.%. The composites with a given content of natural graphite and remaining content of various petroleum pitch/cokes mixtures at 1:4~4:1 mass ratios were heated at $800{\sim}1200^{\circ}C$. By increasing the content of petroleum pitch, reversible capacity increased, but a high rate capability decreased. For a given composition of carbonaceous composite, the discharge rate capability improved but the reversible capacity decreased with an increase in heat treatment temperature. The carbonaceous composites fabricated with a mixture of 30 wt.% natural graphite and 70 wt.% petroleum pitch/cokes mixture at 1:4 mass ratio and heat treated at $1000^{\circ}C$ showed relatively high electrochemical properties, of which the reversible capacity, initial efficiency, discharge rate capability (retention of discharge capacity in 10 C/0.2 C), and charge capacity at 5 C were 330 mAh/g, 79 %, 80 %, and 60 mAh/g, respectively.

• Korean Journal of Materials Research
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• v.23 no.2
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• pp.98-103
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• 2013

$Mg_{3-x}Zn_xSb_2$ powders with x = 0-1.2 were fabricated by mechanical alloying in a planetary ball mill with a speed of 350 rpm for 24 hrs and then hot pressed under a pressure of 70 MPa at 773 K for 2 hrs. It was found that there were systematic shifts in the X-ray diffraction peaks of $Mg_3Sb_2$ (x = 0) toward a higher angle with increasing Zn for both the powder and the bulk sample and finally the phase of $Mg_{1.86}Zn_{1.14}Sb_2$ was formed at the Zn content of x = 1.2. The $Mg_{3-x}Zn_xSb_2$ compounds had nano-sized grains of 21-30 nm for the powder and 28-66 nm for the hot pressed specimens. The electrical conductivity of hot pressed $Mg_{3-x}Zn_xSb_2$ increased with increasing Zn content and temperature from 33 $Sm^{-1}$ for x = 0 to 13,026 $Sm^{-1}$ for x = 1.2 at 323 K. The samples for all the compositions from x = 0 to x = 1.2 had positive Seebeck coefficients, which decreased with increasing Zn content and temperature, which resulted from the increased charge carrier concentration. Most of the samples had relatively low thermal conductivities comparable to the high performance thermoelectric materials. The dimensionless figure of merit of $Mg_{3-x}Zn_xSb_2$ was directly proportional to the Zn content except for the compound with Zn = 1.2 at high temperature. The $Mg_{3-x}Zn_xSb_2$ compound with Zn = 0.8 had the largest value of ZT, 0.33 at 723 K.

• Journal of the Korean Chemical Society
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• v.46 no.5
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• pp.412-429
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• 2002

Chiral separation of gemifloxacin, an quinolone antibacterial agent, using (+)-(18-crown-6)-tetracar-boxylic acid $(18C6H_4)$ as a chiral selector was performed by capillary electrophoresis (CE). Direct analysis of quinolone antibacterial agent in body fluid is beneficial in terms of fast analysis time, multicomponent analysis. However, high con-centration of sodium ion in body fluid can prevent gemifloxacin from interacting with $18C6H_4$ since sodium ion has high affinity with $18C6H_4$ due to the strong charge interaction. Ethylenediaminetetraacetic acid (EDTA), as a chelating ligand, was added in the running buffer in order to reduce the interaction between sodium ion and the chiral selector. Increased separation efficiency and reduced migration time were observed while sodium ion exists in the sample solution at the concentration up to 150 mM.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.2
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• pp.357-362
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• 2020

The TMFT, a sub-system of TINC, provides voice calls, data transmission and reception, and multimedia services to individual users. At the time of development in 2011, the power circuit of the TMFT was designed to electrical power supply to each device via a charger IC. However, the newly improved power supply circuit allows power to be supplied to each device through the PMIC without configuring the charger IC separately. In this paper, the power circuit design structure of TMFT applied in the development stage and the improved power circuit design structure were compared. And we verified through experiments whether the improved power circuit can be applied to TMFT. The experimental method was verified by directly comparing the current consumption test, charge time comparison test, and rising temperature test during charging each of before and after improvement terminals.