• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.2
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• pp.5-12
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• 2000

Uncooled metallic thin-film thermopile infrared detectors have been fabricated, and the figures of merit for the detectors were examined. The hot junctions of a thermopile were prepared on a $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$-membrane which acts as a thermal isolation layer, the cold junctions on the membrane supported with the silicon rim which functions as a heat sink, and Au-black was used as an infrared absorber. Infrared absorbance of Au-black, which strongly depends on the chamber pressure during Au-evaporation and its mass per area, was found to be about 90 ％ in the wavelength range from 3${\mu}{\textrm}{m}$ to 14${\mu}{\textrm}{m}$. Voltage responsivity, noise equivalent power, and specific detectivity of Bi-Sb thermopile infrared detector at 5 Hz-chopping frequency were about 10.5V/W, 2.3 nW/Hz$^{1/2}$, 및 $1.9\times10^{7}$ cm.Hz$^{1/2}$/w at room temperature in air, respectively.

• Journal of electromagnetic engineering and science
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• v.9 no.2
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• pp.85-97
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• 2009

As operating frequency is raised and as more integration with active and passive elements is required, it becomes difficult to fabricate more than 120 ${\Omega}$ characteristic impedance of a mierostrip line. To solve this problem, an equivalent high impedance transmission-line section is suggested, which consists mainly of a pair of coupled-line sections with two shorts. However, it becomes a transmission-line section only when its electrical length is fixed and its coupling power is more than half. To have transmission-line characteristics(perfect matching), independently of coupling power and electrical length, two identical open stubs are added and conventional design equations of evenand odd-mode impedances are modified, based on the fact that the modified design equations have the linear combinations of conventional ones. The high impedance transmission-line section is a passive component and therefore should be perfectly matched, at least at a design center frequency. For this, two different solutions are derived for the added open stub and two types of high impedance transmission-line sections with 160 ${\Omega}$ characteristic impedance are simulated as the electrical lengths of the coupled-line sections are varied. The simulation results show that the determination of the available bandwidth location depends on which solution is chosen. As an application, branch-line hybrids with very weak coupling power are investigated, depending on where an isolated port is located, and two types of branch-line hybrids are derived for each case. To verify the derived branch-line hybrids, a microstrip branch-line hybrid with -15 dB coupling power, composed of two 90$^{\circ}$ and two 270$^{\circ}$ transmission-line sections, is fabricated on a substrate of ${\varepsilon}_r$= 3.4 and h=0.76 mm and measured. In this case, 276.7 ${\Omega}$ characteristic impedance is fabricated using the suggested high impedance transmission-line sections. The measured coupling power is -14.5 dB, isolation and matching is almost perfect at a design center frequency of 2 GHz, showing good agreement with the prediction.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.5
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• pp.947-954
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• 2009

This paper proposed a new balanced power amplifier using the reflected input of conventional balanced power amplifiers composed of branch line hybrid coupler. In general, the single-ended amplifier in balanced amplifiers does not have the perfect matching, so the reflected input power, in other words the leakage power, is terminated conventionally at the isolation port of hybrid coupler. However in this work, the leakage power is injected into the auxiliary amplifier, and its output power is combined to the output power of balanced amplifier. Therefore output power, efficiency, and 2-tone IMD3 performances of the proposed balanced amplifier are highly improved compared to the conventional balanced amplifier. For the verification of the proposed balanced amplifier, a conventional balanced amplifier and the proposed balanced amplifier are designed, fabricated and measured, and the measured results are compared. The proposed balanced amplifier shows the improvement in the output power(Pout), power added efficiency (PAE), and 2-tone IMD3 by 3dB, 5.2%, and $5{\sim}10dBc$, respectively, from the measurement.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.52-59
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• 2007

In this paper, we analyzed and measured implant isolation characteristics for a 1.25 Gbps monolithic integrated hi-directional (M-BiDi) optoelectronic system-on-a-chip, which is a key component to constitute gigabit passive optical networks (PONs) for a fiber-to-the-home (FTTH). Also, we derived an equivalent circuit of the implant structure under various DC bias conditions. The 1.25 Gbps M-BiDi transmit-receive SoC consists of a laser diode with a monitor photodiode as a transmitter and a digital photodiode as a digital data receiver on the same InP wafer According to IEEE 802.3ah and ITU-T G.983.3 standards, a receiver sensitivity of the digital receiver has to satisfy under -24 dBm @ BER=10-12. Therefore, the electrical crosstalk levels have to maintain less than -86 dB from DC to 3 GHz. From analysed and measured results of the implant structure, the M-BiDi SoC with the implant area of 20 mm width and more than 200 mm distance between the laser diode and monitor photodiode, and between the monitor photodiode and digital photodiode, satisfies the electrical crosstalk level. These implant characteristics can be used for the design and fabrication of an optoelectronic SoC design, and expended to a mixed-mode SoC field.

• Journal of electromagnetic engineering and science
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• v.3 no.2
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• pp.86-90
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• 2003

A flat conversion loss in microwave mixer is hard to achieve if integrating with an image rejection filter(IRF). This is due to the change of termination condition with respect to the LO and IF frequency at RF port where the filter has 50 ohm termination property only in the RF band. This paper describes a flatness maintenance in the down mixer concerning a diode matching condition as well as an electrical length of embedding line at RF port. The implemented single balance diode mixer is suitable for a 23 ㎓ European Terrestrial Radio. RF, LO and fixed IF frequency chosen in this paper are 21.2∼22.4 ㎓, 22.4∼23.6 ㎓ and 1.2 ㎓, respectively. The measured results show a conversion loss of 8.5 ㏈, flatness of 1.2 ㏈ p-p, input P1㏈ of 7㏈m, IIP3 of 15.42 ㏈m with nominal LO power level of 10㏈m. The return loss of RF and LO port are less than - 15 ㏈ and - 12 ㏈, respectively and IF port is less than - 6 ㏈. LO/RF and LO/IF isolation are 18 ㏈ and 50 ㏈, respectively. This approach would be a helpful reference for designing up/down converter possessing a filtering element.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.2058-2060
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• 2004

In this paper, circular polarized antennas of Tx 30GHz and Rx 20GHz are implemented in LTCC process. Tx antenna has a circular patch structure and Rx antenna has a ring patch structure. The feeding line of Tx antenna is placed in the center hole of Rx ring patch antenna which is printed under Tx circular patch antenna layer. It makes antenna size smaller. Tx antenna's return loss in under -10dB level from 30GHz to 31GHz and Rx antenna is under -10 dB from 20GHz to 21GHz. The isolation between two antennas is less than -20dB. Axial ratio is less than 3dB though out each band.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.147-150
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• 2005

Low actuation voltage and no contact stiction are the important factors to apply MEMS RF switches to mobile devices. Conventional electrostatic MEMS RF switches require several tens of voltages for actuation. In this paper we propose PAS MEMS RF switch which adopt PZT actuators and seesaw cantilevers to meet the above requirements. The fundamental structures of PAS MEMS switch were designed, optimized, and fabricated. Through the developed processes PAS SPDT MEMS RF switches were successfully fabricated on 4" wafers and they showed good electrical properties. The driving voltage was less than 5 volts. And the insertion loss was -0.5dB and the isolation was 35dB at 5GHz. The switching speed was about 5kHz. So these MEMS RF switches can be applicable to mobile communication devices or wireless multi-media devices at lower than 6GHz.

• Journal of IKEEE
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• v.16 no.3
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• pp.173-176
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• 2012

This paper introduces a novel horn antenna for circular polarization using a planar-type radiator. This antenna can be divided to two parts, microstrip antenna and square horn. The microstrip antenna has the role of feeder and polarizer of the horn antenna, and it is designed to stacked type having metal spacer for high gain, high isolation and wideband characteristic. Using the proposed antenna structure, the horn antenna needs not additional structure such as feeder and polarizer, and the size of it can be considerably reduced. The horn antenna has typical gain of 8dBi and 3-dB axial-ratio bandwidth around 4.9%.This antenna can widely used for various antenna system for mobile and satellite communication using circular polarization expecially in high frequency band.

• Journal of information and communication convergence engineering
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• v.14 no.1
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• pp.35-39
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• 2016

In this paper, we develop a 94-GHz single balanced mixer with low conversion loss using planar Schottky diodes on a GaAs substrate. The GaAs Schottky diode has a nanoscale anode with a T-shaped disk that can yield high cutoff frequency characteristics. The fabricated Schottky diode with an anode diameter of 500 nm has a series resistance of 21 Ω, an ideality factor of 1.32, a junction capacitance of 8.03 fF, and a cutoff frequency of 944 GHz. Based on this technology, a 94-GHz single balanced mixer was constructed. The fabricated mixer shows an average conversion loss of -7.58 dB at an RF frequency of 92.5 GHz to 95 GHz and an IF frequency of 500 MHz with an LO power of 7 dBm. The RF-to-LO isolation characteristics were greater than -32 dB. These values are considered to be attributed to superior Schottky diode characteristics.

• Journal of Sensor Science and Technology
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• v.11 no.5
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• pp.294-300
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• 2002

In this study, we fabricated thermopile infrared sensor with floating membrane structure. Floating membrane was formed by SOI(Silicon On Insulator) structure. In SOI structure, silicon dioxide layer between top silicon layer and bottom silicon substrate was etched by HF solution, then membrane was floated over substrate. After membrane was floated, thermopile pattern was formed on membrane. By insertion of SOI technology, we could obtain thermal isolation structure easily and passivation process for sensor pattern protection was not required during fabrication process. Then, the amplifier circuit for thermopile sensor was fabricated by using $1.5{\mu}m$ CMOS process. The voltage gain of fabricated amplifier was about two hundred.