• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.61-64
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• 2011

In order to grow the crystalline solar cells industry continuously, development of alternate low-cost manufacturing processes is required. Plasma doping system is the technique for introducing dopants into semiconductor wafers in CMOS devices. In photovoltaics, plasma doping system could be an interesting alternative to thermal furnace diffusion processes. In this paper, plasma doping system was applied for phosphorus doping in crystalline solar cells. The Plasma doping was carried out in 1~4 KV bias voltages for four minutes. For removing surface damage and formation of pn junction, annealing steps were carried out in the range of $800{\sim}900^{\circ}C$ with $O_2$ ambient using thermal furnace. The junction depth in about $0.35{\sim}0.6{\mu}m$ range have been achieved and the doping profiles were very similar to emitter by thermal diffusion. So, It could be confirmed that plasma doping technique can be used for emitter formation in crystalline solar cells.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.120-123
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• 2014

Thermal doping method using furnace is generally used for solar-cell wafer doping. It takes a lot of time and high cost and use toxic gas. Generally selective emitter doping using laser, but laser is very high equipment and induce the wafer's structure damage. In this study, we apply atmospheric pressure plasma for solar-cell wafer doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (1 kHz ~ 100 kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer (120 ohm/square). SIMS (Secondary Ion Mass Spectroscopy) are used for measuring wafer doping depth and concentration of phosphorus. We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1249-1251
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• 1998

We have studied the properties of $GaAs_{0.35}P_{0.65}$ epitaxial films on the GaP according to doping of $NH_3$ gas using VPE method by CVD. The efficiency of $GaAs_{0.35}P_{0.65}$ epitaxial films found to be greatly enhanced by the according of nitrogen doping. The diodes were fabricated by means of Zn diffusion into vapor grown $GaAs_{0.35}P_{0.65}$ epitaxial films doped with N and Te. The effects of nitrogen doping on carrier density of epitaxial films, PL wavelength and the power out, forward voltage of diodes are discussed. In the end, The effect of electrical and optical properties is influenced by the deep level and deep level density of nitrogen doping.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.449-453
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• 1996

In order to improve EL performance, anthracene was doped into the 8-hydroxyquinoline-aluminum (Alq$^3$) light-emitting layer of organic double layered EL cells. The EL cells were fabricated on ITO glass substrates by vacuum deposition. Doping of anthracene to the light-emitting $Alq^3$layer was performed by means of co-evaporation. The doping concentration was changed in the range of 5 to 30 wt.%. It was confirmed that anthracene doping of appropriate concentration increased the available current density and brightness of the EL cells. Carrier mobility of the $Alq^3$ layer was measured by time of flight method. The influence of anthracene doping on the cell performance was discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.300-304
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• 2002

We fabricated thick film monopole antennas using Mo-doped $BiNbO_{4}$ ceramics and investigated their electrical properties as a function of the Mo-doping concentration. Compared with undoped $BiNbO_{4}$ ceramics, 10 at.% Mo-doping improved microwave dielectric properties of ceramics by increased sintered density as well as decreased space charge density. Further increase in the Mo-doping concentration caused formation of $Bi_{2}MoO_{6}$ phases, resulting in deterioration of the microwave characteristics. The gain and bandwidth of the ceramic monopole antenna were also greatly affected by the Mo-doping concentration. When Mo-doping concentration was 10 at%, highest gain of ~0.7dBi with lowest bandwidth of 30% at 2.3GHz was obtained.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.915-917
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• 1999

We investigated the effects of doping elements on the Bi system superconductor. The doping elements can be classified into two groups depending on their supeconducting characteristics in the Bi-Sr-Ca-Cu-O structure. The first group of doping elements(P and K) have a tendency to decompose the superconducting phase and reduce the optimal sintering temperature. The second group of doping elements(B, Si, Sn and Ba) almost uneffected the superconductivity of the 2223 and 2212 phase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.987-993
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• 2003

We fabricated thick film monopole antennas using Mo-doped BiNbO$_4$ ceramics and investigated their electrical properties as a function of the Mo-doping concentration. Compared with undoped BiNbO$_4$ ceramics, 10 at.% Mo-doping improved microwave dielectric properties of ceramics by increased sintered density as well as decreased space charge density. Further increase in the Mo-doping concentration caused formation of Bi$_2$MoO$_{6}$ phases, resulting in deterioration of the microwave characteristics. The gain and bandwidth of the ceramic monopole antenna were also greatly affected by the Mo-doping concentration. When Mo-doping concentration was 10 at.%, highest gain of -0.7dBi with lowest bandwidth of 30% at 2.3GHz was obtained.

• Elastomers and Composites
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• v.56 no.4
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• pp.250-253
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• 2021

Polypyrrole is an organic thermoelectric material which has been receiving extensive attention in recent years. Polypyrrole is applicable in various fields because its electrical properties are controllable by its doping concentration. In this study, the effects of the polypyrrole doping state on its photoresponse were investigated. The degree of doping was controlled by ammonia solution treatment. Then, the chemical structure as a function of the doping states was observed by Raman analysis. Moreover, the photocurrent and photovoltage characteristics for various doping states were measured by an asymmetrically irradiated light source. As the degree of doping increased, the electrical conductivity increased, which affected the photocurrent. Meanwhile, the photovoltage was related to the temperature gradient caused by light irradiation.

• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.20-24
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• 2017

Currently, techniques mainly used in semiconductor impurity diffusion processes include furnace thermal diffusion, ion implantation, and vacuum plasma doping. However, there is a disadvantage that the process equipment and the unit cost are expensive. In this study, boron diffusion process using relatively inexpensive atmospheric plasma was conducted to solve this problem. With controlling parameters of Boron diffusion process, the doping characteristics were analyzed by using secondary ion mass spectrometry. As a result, the influence of each variable in the doping process was analyzed and the feasibility of atmospheric plasma doping was confirmed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.198-203
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• 2000

This paper investigated the effects of doping elements on the Bi-Sr-Ca-Cu-O ceramics. The doping elements can be classified into four groups depending on their superconducting characteristics in the Bi-Sr-Ca-Cu-O structure. The first group of doping elements(Co, Fe, Ni and Zn) substitute into the copper site and can reduce the critical temperatures of the 2223 and 2212 phases. The second group of doping elements(Y and La) substitute into the Ca site and cause the disappearance of the 2223 phase and increase the critical temperatures in the 2212 phase. The third group of doping elements(P and K) have a tendency to decompose the superconducting phase and reduce the optimal sintering temperature. The fourth group of doping elements(B, Si, Sn and Ba) almost unaffected the superconductivity of the 2223 and 2212 phase.