• 제목/요약/키워드: Electrical Contact

검색결과 2,095건 처리시간 0.025초

유기 TFT 재작을 위한 $\alpha$&$-67 박막의 접촉 및 전기적 특성 (Contact and Electrical Characteristics of $\alpha$-67 Thin-Film for the fabrication of organic Thin-Film Transistor)

  • 오세운;김대엽;최종선;박미경;김영관;신동명
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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    • pp.313-316
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    • 1998
  • Conjugated oligomers have been already used as active layers in field effect transistors, photodiodes and electroluminescent devices. Particularly thiophene oligomers such $\alpha$ -sexithiophene($\alpha$-6T) attract great interest for its prospective app1ications in large-area flexible displays. In this study, we investigated the contact properties between the organic semiconductor $\alpha$-6T and metals such as Au(Gold), Ag(Silver), Cr(Chromium), Al(Aluminum), Cr(Chromium). Using the Transmission Line Model(TLM) method, specific contact resistances of the metal lines in contact with the $\alpha$-6T were determined. From the current-voltage characteristics, electrical conductivity of the $\alpha$-6T films is found.

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선택 건식에칭에 의한 단일 산화주석 나노와이어 소자의 접촉 특성 개선 (Improved Contact Characteristics in a Single Tin-Oxide Nanowire Device by a Selective Reactive Ion Etching (RIE) Process)

  • 이준민;김대일;하정숙;김규태
    • 전기학회논문지
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    • 제59권1호
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    • pp.130-133
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    • 2010
  • Although many structures based on $SnO_2$ nanowires have been demonstrated, there is a limitation towards practical application due to the unwanted contact potential between the metal electrode and the $SnO_2$ nanowire. This is mostly due to the presence of the native oxide layer that acts as an insulator between the metal contact and the nanowire. In this study the contact properties between Ti/Au contacts and a single $SnO_2$ nanowire was compared to the electrical properties of a contact without the oxide layer. RIE(Reactive Ion Etching) is used to selectively remove the oxide layer from the contact area. The $SnO_2$ nanowires were synthesized by chemical vapor deposition (CVD) and dispersed on a $Si/Si_3N_4$ substrate. The Ti/Au (20nm/100nm) electrodes were formed bye-beam lithography, e-beam evaporation and a lift-off process.

손마디 접촉을 고려한 다지 다관절 로봇손의 최적 접촉력 결정 방법 (Determination of Optimal Contact Forces for Multi-Jointed, Multi-Fingered Robotic Hand Considering Contacts of Inner Links)

  • 백주현;정낙영;서일홍;최동훈
    • 대한전기학회논문지
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    • 제40권8호
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    • pp.825-835
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    • 1991
  • This paper deals with a case for robotic hands to grasp the objects using inner link contact as well as fingertip contact. And the case is proved to be more efficient than the case of using only fingertip contact in terms of stability and uniform distribution of the contact forces. The general algorithm for the determination of the optimal ocntact force is developed for the soft finger contact as well as the point contact with friction. To show the validity of the proposed algorithm a numerical example is illustated by employing a robotic hand with three fingers each of which has four joints.

Ni/Cu 전극을 적용한 고효율 실리콘 태양전지의 제작 및 특성 평가 (Ni/Cu Metallization for High Efficiency Silicon Solar Cells)

  • 이은주;이수홍
    • 한국전기전자재료학회논문지
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    • 제17권12호
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    • pp.1352-1355
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    • 2004
  • We have applied front contact metallization of plated nickel and copper for high efficiency passivated emitter rear contact(PERC) solar cell. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. The plating technique is a preferred method for commercial solar cell fabrication because it is a room temperature process with high growth rates and good morphology. In this system, the electroless plated Ni is utilized as the contact to silicon and the plated Cu serves as the primary conductor layer instead of traditional solution that are based on Ti/Pd/Ag contact system. Experimental results are shown for over 20 % PERC cells with the Plated Ni/Cu contact system for good performance at low cost.

TiW 박막을 이용한 극한 환경 MEMS용 3C-SiC의 Ohmic contact 형성 (Ohmic Contact Formation of SiC for Harsh Environment MEMS Using a TiW Thin-film)

  • 정수용;노상수;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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    • pp.133-136
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    • 2004
  • In this study, the characteristics of 3C-SiC ohmic contact were investigated. Titanium-tungsten(TiW) films were used for contact metalization. The ohmic contact resistivity between 3C-SiC and TiW was measured by HP4155 and then calculated with the circular transmission line method(C-TLM). And also the physical properties of TiW and the interface between TiW and 3C-SiC were analyzed using XRD and AES. TiW films make a good role of a diffusion barrier and their contact properties with 3C-SiC are stable at high temperature.

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터널구간 팬터그래프와 전차선간 동적성능 검측장치 구현 (Implement of Dynamic Performance Measurement System Between Pantograph and Contact wire in Tunnel)

  • 박영;박철민;이기원;권삼영
    • 전기학회논문지
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    • 제61권11호
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    • pp.1732-1736
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    • 2012
  • To increase speed up of train, in the field of catenary system, it is necessary to develop of new monitoring methods for dynamic interaction between pantograph and contact wire. Also, there is a need to develop technologies that constantly measure are from various railway structure such as uplift of contact wire, vibration of catenary, dynamic strain of contact line in tunnel. In this paper condition monitoring systems for dynamic performance of catenary systems in tunnel were proposed. An advanced method and results of field tests using high speed camera for monitoring of vertical upward movement of the grooved contact wire due to the force produced from the pantograph were presented. The proposed uplift measurement system of contact wire is expected to enhance precision of current collection quality performance assessment methods at high-speed lines.

Simple Analysis Method for the Interrupting Capability of a Contact System in a Molded Case Circuit Breaker

  • Choi, Young-Kil;Jee, Seung-Wook
    • Journal of Electrical Engineering and Technology
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    • 제12권3호
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    • pp.1257-1261
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    • 2017
  • This paper focuses on understanding the interrupting capability of an arc contact system in a molded case circuit breaker (hereafter MCCB). We selected four types of MCCBs and analyzed the magnetic flux density distributions in the contact systems caused by the fault currents. We ascertained that the magnetic flux density profile varies according to the shape of the contact system and was asymmetric at both the ends of an arc, perpendicular to the arc column because of the magnetic grid installed in the contact system. The asymmetric difference creates a magnetic force that pushes the arc current outwards and provides an interrupting capability. We have introduced a simple analysis method for determining the interrupting capability of the contact system for an MCCB by the arc-driving magnetic flux density.

릴레이 접점 특성에 미치는 전기적 접속의 영향 (Effect on the Relay Contact Characteristics According to the Presence of Electrical Connection)

  • 진인영;최순호;김관식;허창수
    • 한국전기전자재료학회논문지
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    • 제29권10호
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    • pp.647-651
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    • 2016
  • The power relay can easily control high voltage and high current through metallic contacts. In addition, it has the advantage in reasonable price. So it has been used in many applications. But the power relay has a weak point by mechanical movements. These mechanical movements cause the bouncing phenomenon. Arc and bouncing phenomenon are the main causes of electric abrasion and material erosion. In this study, mechanical repetitive experiments and repetitive experiments in electrically connected state are conducted. Then these two experimental results in terms of bouncing phenomenon and changes in the contact surface are compared. In all number of repetitions, contacts in an electrically connected state cause smaller number of bounce. Also, It has lower contents of silver on eroded surface than the other. The experimental results would be helpful to the further study of contacts life span.

초전도자석 시스템 응용을 위한 멀티-컨텍 커넥터의 열 발생 특성 평가 (Estimation of Heat Generation in Multi-Contact Connector for Superconducting Magnet Application)

  • 김명수;최연석;김동락;이윤아
    • Progress in Superconductivity
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    • 제14권2호
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    • pp.122-127
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    • 2012
  • Current leads are one of the important components for carrying the current to the coil in the superconducting magnet system. Heat leakage through the current lead is the major factor of entire heat load in the cryogenic system because current leads carry the current from room temperature to near 4 K, connecting thermally each other. Therefore, minimization heat load through current lead can reduce the operating temperature of superconducting magnet. The semi-retractable current lead, composed of multi-contact connector and HTS element, is one of good options. Comprehension of Multi-contact connector's structure, contact resistance and heat generation is essential for estimating heat generation in current leads. Multi-contact connector has several louvers inside of socket and the shape, number, size of louvers are different with the size of connector. Therefore contact area, current path and contact resistance are also different. In this study, the contact resistance in multi-contact connector is measured using the electrical power as a function of connector's size and temperature. Also, the unique correlation of electrical contact resistance is derived and heat generation is estimated for superconducting magnet application.

단결정 실리콘 태양전지를 위한 screen printing 전극과 photo lithography 다층전극의 적용에 대한 연구 (Application of Screen Printing and Photo Lithography Multi-layer Metal Contact for Single Crystalline Silicon Solar Cells)

  • 김도완;최준영;이은주;이수홍
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.109-109
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    • 2006
  • Screen printing (SP) metal contact is typically applied to the solar cells for mass production. However, SP metal contact has low aspect ratio, low accuracy, hard control of the substrate penetration and unclean process. On the other hand, photo lithograpy (PL) metal contact can reduce defects by metal contact. In this investigation, PL metal contact was obtained the multi-layer structure of Ti/Pd/Ag by e-beam process. We applied SP metal contact and PL metal contact to single crystalline silicon solar cells, and demonstrated the difference of conversion efficiency. Because PL metal contact silicon solar cell has Jsc (short circuit current density) better than silicon solar cell applied SP metal contact.

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