• Transactions on Electrical and Electronic Materials
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• 제14권1호
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• pp.32-35
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• 2013

In this paper, a manufacturing process was developed for fabricating high-quality AlGaN/GaN high electron mobility transistors (HEMTs) on silicon carbide (SiC) substrates. Various conditions and processing methods regarding the ohmic contact and pre-metal-deposition $BCl_3$ etching processes were evaluated in terms of the device performance. In order to obtain a good ohmic contact performance, we tested a Ti/Al/Ta/Au ohmic contact metallization scheme under different rapid thermal annealing (RTA) temperature and time. A $BCl_3$-based reactive-ion etching (RIE) method was performed before the ohmic metallization, since this approach was shown to produce a better ohmic contact compared to the as-fabricated HEMTs. A HEMT with a 0.5 ${\mu}m$ gate length was fabricated using this novel manufacturing process, which exhibits a maximum drain current density of 720 mA/mm and a peak transconductance of 235 mS/mm. The X-band output power density was 6.4 W/mm with a 53% power added efficiency (PAE).

• 한국안전학회지
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• 제20권1호
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• pp.87-93
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• 2005

In this paper, we analyzed ignition characteristics of combustible material and the waveform of power dissipation, voltage and current by poor contact. And the surface structure of plug by poor contact was analyzed. In the results of experiment, the heat generated by poor contact and ignited the combustible material on power cord sets. The insulation material was molten and carbonized by the heat conduction though plug pit and voids were formed inside of insulation material. The waveform of voltage and power dissipation distorted because of a growth of oxidation by poor contact. In particular, in case that load was big load, the waveform of voltage and power dissipation severely distorted as with the passage of time. The surface of plug pin was changed from erosion mark to welding mark according to big load. The results will be applied to the cause analysis of electrical disaster.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.406-407
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• 2006

This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using the C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}cm^2$ was obtained due to the improved interfacial adhesion.

• 한국안전학회지
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• 제24권2호
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• pp.30-36
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• 2009

This paper aims at the precursor analysis and DB development of electrical fires based on thermal and current signals for partial disconnection and poor contact on electric wires through experiments and simulations. Also, DB system required for developing the precursor DB with these data was studied and designed. Firstly, in case of partial disconnection, characteristics were derived and analyzed by experiment and electrical-thermal finite element method(Flux 3D) on the model wires which consist of VCTF and IV electric wires. Based on the characteristics, About 351 partial disconnection precursor patterns were generated by the thermal analysis for electric wire according to deterioration time under normal state and 200% overload state of rated current. Secondly, in order to develop poor contact precursor patterns, temperature value and the current signal were considered. In simulating the poor contact situation on connector area of MCCB, connection torque was changed. Through the experimental analysis, about 251 poor contact precursor patterns were generated. Finally, Using thermal precursor patterns obtained by partial disconnection and poor contact, electrical fire thermal precursor DB was developed.

• 조명전기설비학회논문지
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• 제22권9호
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• pp.69-74
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• 2008

동절기 전차선의 서리와 결빙은 매우 심각한 문제를 발생시킬 수 있다. 팬터그래프의 집진 스트립의 기계적 표면과 전차선 사이에 서리 또는 결빙으로 인한 아크가 발생하게 된다. 이에 따른 전기적 저항은 팬터그래프와 전차선 사이의 전류의 풀질을 감소시킨다. 해빙시스템은 통절기 전차선의 서리와 결빙을 녹이는 역할을 한다. 해빙시스템의 원리는 전차선의 임피던스의 Joule열을 이용하여 서리와 결빙을 제거하는 것이므로 전차선의 온도는 인가전류가 증가할수록 증가하였으며, 풍속이 증가할수록 감소하는 것을 알 수 있었다.

• Journal of Advanced Marine Engineering and Technology
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• 제31권2호
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• pp.190-196
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• 2007

This paper presents the 3D finite element analysis of the Contact-less Power Supply(CPS) with linear servo motor. The primary, secondary self and leakage inductances of the contact-less power supply and the capacitances of a resonant circuit are calculated by the finite element analysis using current source. The voltage source is used to do accurate analysis of the characteristics of the contact-less power supply. The CPS with the linear servo motor is proposed. The characteristics analysis of the contact-less power supply considering the linear servo motor is done.

• 한국소음진동공학회논문집
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• 제16권6호
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• pp.634-642
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• 2006

For the analysis of dynamic contact between a catenary and a pantograph of high-speed electrical train, the numerical solution of the equations of motion of the vehicle pantograph and the catenary system subjected to the contact condition is obtained. The whole equations of motion of the catenary and the pantograph are simultaneously time integrated with the strict application of the contact condition. For the stability of the numerical solution, with the cubic spline interpolation of the catenary displacement, the velocity and acceleration constraints as well as the displacement constraint are imposed on the contact point. Especially it is shown that the Coriolis and centripetal accelerations are critical for the accuracy and stability of the computation.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2002년도 학술대회지
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• pp.491-494
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• 2002

To assess the electrostatic interaction of surfaces at the triple contact line, the electrostatic field is analyzed by using the finite element method. The Helmholtz free energy is used as a functional which should be minimized under an equilibrium condition. The numerical results are compared with the nonlinear analytical solution for a two-dimensional charged interface and linear solution for a wedge shaped geometry, which shows fairly good agreement. The method is applied to the analysis of electrostatic influence on the contact angle on a charged substrate. The excess free energy found to increase drastically as the contact angle approaches to zero. This excess free energy Plays an opposite role to the Primary electrocapillary effect, as the contact angle gets smaller. This enables an alternative explanation for the contact-angle saturation phenomenon occurring in electrical control of surface tension and contact angle.

• 대한기계학회논문집B
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• 제27권7호
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• pp.956-962
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• 2003

The Lippmann-Young equation has been widely used in electrowetting to predict the contact-angle change of a droplet on a insulating substrate with respect to the externally-applied electrical voltage. The Lippmann-Young equation is derived by assuming a droplet as a perfect conductor, so that the effect of the electrical double layer and the line tension are not taken into account. The validity of the assumption has never been checked before, systematically. In the present investigation, a modified Lippmann-Young equation is derived taking into account of the effect of the electrical double layer and the line tension. To assess their influence on contact-angle change in electrowetting, the electrostatic field around the three-phase contact line is analyzed by solving the Poisson-Boltzmann equation numerically. The validity of the numerical methods is verified by using the past theoretical results on the electrostatic field around a wedge-shaped geometry, which shows fairly good agreement. The results of the present investigation clearly indicate that the effect of the electrical double layer and the line tension is negligible for a millimeter-sized droplet. On the other hand, for a micron-sized droplet, the effect of the line tension can become a dominating factor which controls the contact-angle change in electrowetting.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 하계학술대회 논문집
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• pp.261-264
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• 1990

The specific contact resistance(SCR) of metal-semiconductor interface is an important design parameter for VLSI interconnecting technology. As the critical feature size of the integrated structures decrease, the physical size of ohmic contacts will also decrease and the series contact resistance will increase. Al-Si contacts on the annealing condition are studied. The propreties of the contacts depend considerably on the annealing procedures. Barrier height is measured from Capacitance-Voltage characteristics. The specific contact resistance are analyzed using a modified four point method.