• 한국전기전자재료학회논문지
• /
• 제21권7호
• /
• pp.610-614
• /
• 2008

In this work, the electrical and optical properties of the two different p-type GaN electrode schemes, ZnNi/ITO and ZnNi/Au, were compared each other, and applied to the top-emitting GaN/InGaN light-emitting diodes (LEDs). The ZnNi/ITO electrode showed much higher transmittance (90%) and slightly lower contact resistance $(1.27{\times}10^{-4}{\Omega}cm^2)$ than those (77%, $(2.26{\times}10^{-4}{\Omega}cm^2)$) of the ZnNi/Au at a wavelength of 460 nm. In addition, GaN LEDs having ZnNi/ITO showed accordingly higher light output power and luminous intensity than those having ZnNI/Au did at the current levels up to 1 A.

• 한국전기전자재료학회논문지
• /
• 제11권3호
• /
• pp.174-180
• /
• 1998

In this work, the properties of FRP, which is applied recently in the composite insulating materials, by thermal treatment were investigated. The specimens were epoxy glass laminates fabricated by thermal press method and had the volume content of 46[%] cutted $45^{\circ}C$ in the fiber direction and 1.0[mm] thickness. The experimental results showed that the amount of weight loss, wettability, surface potential, and surface resistivity increased up to 200[$^{\circ}C$] as a function of temperature. Usually, most degradations caused the hydrophilic to decrease the contact angle. But, in this work on thermal-degradated FRP, we can confirm the introduction of hydrophobic properties by cross-linking and the ablation of polar small-molecules rather than chain scission and oxidation. Finally, weight loss and contact angle increased. These phenomena show the existence of hydrophobic surface. With the change to the hydrophobic surface and the electrical potential and resistivity on FRP surface increased. But, the dielectric properties and tensile stength are decreased.

• 센서학회지
• /
• 제16권4호
• /
• pp.259-262
• /
• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

• 정보저장시스템학회:학술대회논문집
• /
• 정보저장시스템학회 2005년도 추계학술대회 논문집
• /
• pp.185-189
• /
• 2005

We reported here nano-scale electrical phase-change recording in amorphous $Ge_2Sb_2Te_5$ media using an atomic force microscope (AFM) having conducting probes. In recording process, a pulse voltage is applied to the conductive probe that touches the media surface to change locally the electrical resistivity of a film. However, in contact operation, tip/media wear and contamination could major obstacles, which degraded SNR, reproducibility, and lifetime. In order to overcome tip/media wear and contamination in contact mode operation, we adopted the W incorporated diamond-like carbon (W-DLC) films as a protective layer. Optimized mutilayer media were prepared by a hybrid deposition system of PECVD and RF magnetron sputtering. When suitable electrical pulses were applied to media through the conducting probe, it was observed that data bits as small as 25 nm in diameter have been written and read with good reproducibility, which corresponds to a data density of $1 Tbit/inch^2$. We concluded that stable electrical phase-change recording was possible mainly due to W-DLC layer, which played a role not only capping layer but also resistive layer.

• 전기학회논문지
• /
• 제66권11호
• /
• pp.1669-1674
• /
• 2017

In this study, We have discussed the development of a diagnostic device to detect and prevent electrical fire due to the arc caused by contact failure and partial disconnection at the connection part of the three-phase electric heater wiring used in the industrial field. The arc caused by contact failure and partial disconnection at the connection part of the electric heater shows a change in the current effective value. Therefore, it is possible to determine whether there exists a defect by analyzing the current unbalance factor and the number of current fluctuations with the diagnostic apparatus. The three-phase unbalanced heater is considered to be capable of determining defects through periodic measurement and trend analysis of the current unbalance factor. It is also expected that this device can be used not only for electric heaters but also for detection of defects in wiring and connections of electrical equipment having a characteristic of constant load current.

• 한국분말재료학회지
• /
• 제18권5호
• /
• pp.423-429
• /
• 2011

Thermoelectric-thick films were fabricated by using a screen printing process of n and p-type bismuth-telluride-based pastes. The screen-printed thick films have approximately 30 ${\mu}m$ in thickness and show rough surfaces yielding an empty gap between an electrode and the thick film. The gap might result in an increase of an electrical resistivity of the fabricated thick-film-type thermoelectric module. In this study, we suggest a conductive metal coating onto the surfaces of the screen-printed paste in order to reduce the contact resistance in the module. As a result, the electrical resistivity of the thermoelectric module having a gold coating layer was significantly reduced up to 30% compared to that of a module without any metal coating. This result indicates that an introduction of conductive metal layers is effective to decrease the contact resistivity of a thick-film-typed thermoelectric module processed by screen printing.

• KIEE International Transactions on Electrophysics and Applications
• /
• 제4C권3호
• /
• pp.111-116
• /
• 2004

The Ni/SiC Schottky diode was fabricated with the $\alpha$-SiC thin film grown by the ICP-CVD method on a (111) Si wafer. $\alpha$-SiC film has been grown on a carbonized Si layer in which the Si surface was chemically converted to a very thin SiC layer achieved using an ICP-CVD method at $700^{\circ}C$. To reduce defects between the Si and $\alpha$-SiC, the surface of the Si wafer was slightly carbonized. The film characteristics of $\alpha$-SiC were investigated by employing TEM (Transmission Electron Microscopy) and FT-IR (Fourier Transform Infrared Spectroscopy). Sputterd Ni thin film was used as the anode metal. The boundary status of the Ni/SiC contact was investigated by AES (Auger Electron Spectroscopy) as a function of the annealing temperature. It is shown that the ohmic contact could be acquired beyond a 100$0^{\circ}C$ annealing temperature. The forward voltage drop at 100A/cm was I.0V. The breakdown voltage of the Ni/$\alpha$-SiC Schottky diode was 545 V, which is five times larger than the ideal breakdown voltage of the silicon device. As well, the dependence of barrier height on temperature was observed. The barrier height from C- V characteristics was higher than those from I-V.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.321-322
• /
• 2007

In order to increase the cost effectiveness of solar cells, module production should be treated more comprehensively. Back contact cells offer distinct advantage in the interconnection of cells to modules. Thereby Mo thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the Mo were vapor-deposited in the named order. Among them, Mo were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC power was controlled so that the composition of Mo, while the surface temperature having an effect on the quality of the thin film was changed from R.T$[^{\circ}C]$ to $200[^{\circ}C]$ at intervals of $50[^{\circ}C]$. Micro-structural studies were carried out by XRD (D/MAX-1200, Rigaku Co.) and SEM (JSM-5400, Jeol Co.). Electrical properties were measured by CMT-SR3000 Measurement System.

• 한국전기전자재료학회논문지
• /
• 제24권6호
• /
• pp.497-503
• /
• 2011

Currently in Korea, the simple catenary type overhead contact line system is being applied to both conventional lines and high speed lines of electric railway, and circulation current flowing into the catenary system frequently bring undesirable consequences. Namely, the connector wire has many problems according to a flow of excessive circulation current and arc current on catenary when an electric train runs at high speed. This paper presents the development and application of a real-time data acquisition system designed to measure the electrical characteristics of an overhead catenary system in electric railways. The developed system is capable of storing data of a 25 kV power source in a live wire state through a telemetry environment. The field test results show that the proposed technique and the developed system can be practically applied to measure characteristics of current of an overhead catenary system.

• 한국재료학회지
• /
• 제15권1호
• /
• pp.61-65
• /
• 2005

The titanium $diboride(TiB_2)$ has high strength(750MPa), high melting point $(3225^{\circ}C)\;and\;10\%$ IACS electrical conductivity. On this account, the dispersion hardening $Cu-TiB_2$ composites(MMCs) are a promising candidate for applications as electrical contact materials. MMCs for electrical contact materials can reduce material cost and resource consumption caused by wear, due to its good mechanical and electrical property. In this study, we attempt to prepare MMCs with various volume fraction and particle size of $TiB_2$ by means of hot extruded and cold drawn process. Dry sliding wear tests were performed on a pin-on-disk type wear tester, sliding against SM45C under the different applied loads. After wear testing, the microstructures of the worn surfaces were observed by SEM and the microhardnesses of the subsurface zone were measured.