• Transactions on Electrical and Electronic Materials
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• v.7 no.4
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• pp.167-172
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• 2006

Submicron colloidal silica coated with ceria were prepared by mixing of silica and nano ceria particles and modified by hydrothermal reaction. The polishing efficiency of the ceria coated silica slurry was tested over oxide film on silicon wafer. By changing the polishing pressure in the range of $140{\sim}420g/cm^2$ with the ceria coated silica slurries in $100{\sim}300nm$, rates, WIWNU and friction force were measured. The removal rate was in the order of 200, 100, and 300 nm size silica coated with ceria. It was known that the smaller particle size gives the higher removal rate with higher contact area in Cu slurry. In the case of oxide film, the indentation volume as well as contact area gives effect on the removal rate depending on the size of abrasives. The indentation volume increase with the size of abrasive particles, which results to higher removal rate. The highest removal rate in 200 nm silica core coated with ceria is discussed as proper combination of indentation and contact area effect.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.10
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• pp.553-558
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• 2000

This paper deals with change of contact angle, surface potential decay, surface resistivity and XPS of water-treated epoxy insulator. From the experimental results on the contact angle was reduced from $74^{\circ}$to $24^{\circ}$ due to the formation of polar hydroxyl groups on surface which was associated with intermolecular reaction between epoxy chains of three-dimensional network structure and water molecules. From the experimental results in the surface potential decay of water treated-samples, it was found that the accumulation of charge is decreased and the surface potential decay time is shortened by the interaction of polar hydroxyl groups induced on the treated surface as the increment of treatment time. The positive charging on the treated surface compared with negative charging is relatively lowered by the induction of polar hydroxyl groups. The surface resistivity was changed from $10^{15}[{\Omega}/cm^2$] to $10^{12}[{\Omega}/cm^2$] caused by water treatment. From XPS, it was found that the changes affected by the surface degradation of epoxy were caused by the generation of carboxyl groups through the chain decomposition and recombination with oxygen molecules in the air.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.486-491
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• 2008

The plasma processing is applied to many industrial fields as thin film deposition or surface treatment technique. In this study, we investigated large-area uniformed surface treatment of PET film at low temperature by using Scanning Plasma Method(SPM). Then, we measured difference and distribution of temperature on film's surface by setting up a thermometer. We studied the condition of plasma for surface treatment by examining intensity of irradiation of uniformed plasma. And we compared contact angles of treated PET film by using Ar and $O_2$ plasma based low temperature. In our result, surface temperature of 3-point of treating is low temperature about $22^{\circ}C$, in other hands, there is scarcely any variation of temperature on film's surface. And by using Ar plasma treatment, contact angle is lower than untreatment or $O_2$ plasma treatment. In case of PET film having thermal weak point, low temperature processing using SPM is undamaged method in film's surface and uniformly treated film's surface. As a result, Ar plasma surface treatment using SPM is suitable surface treatment method of PET film.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.12
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• pp.1789-1795
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• 2015

The pulley-type tensioning device subjected to a maximum tension of 34 kN has been developed for 400 km/h high-speed railway. The tensioning device is to maintain the tension variation within 3% of the normal value, irregardless of temperature changes. Field tests shows that the tensioning device had a variation of tension which was as small as 0.6% as temperatures changed from $-5{\sim}7^{\circ}C$. Along with the tensions, we measured its X and Y movements due to the temperature changes. Based on a combination of its X and Y movements, we proposed a new performance index with which we can see if the tensioning device has troubles in operation without tension measurements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.323-327
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• 2004

The bubble flow from the wafer surface during plating process was studied in this paper. The plating shape in the opening of photoresist becomes gradated shape in the fountain plating system, because bubbles from the wafer surface are difficult to escape from the deep openings, vias. So, we designed the tilted electrode ring contact to get uniform bump height on all over the wafer and evaluated the film uniformity by SEM and ${\alpha}-step$. In ${\alpha}-step$ measurement, film uniformities in the fountain plating system and the tilted electrode ring contact system were ${\pm}16.6%,\;{\pm}4%$ respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.790-793
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• 2011

In this study, the surface modification for a silicon(Si) mold using $CHF_3$ inductively coupled plasma(ICP). The conditions under that plasma was treated a input ICP power 600 W, an operating gas pressure of 10 mTorr and plasma exposure time of 30 sec. The Si mold surface became hydrophobic after plasma treatment in order to $CF_x$(X= 1,2,3) polymer. However, as the de-molding process repeated, it was investigated that the contact angle of Si surface was decreased. So, we attempted to investigate the degradation mechanism of the accurate pattern transfer with increasing the count of the de-molding process using scanning electron microscope (SEM), contact angle, and x-ray photoelectron spectroscopy (XPS) analysis of Si mold surface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.3
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• pp.95-100
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• 2004

This paper reports a potential problem in the electrical performance of the silicide film to silicon contacts with respect to the scaling trend in integrated circuit (IC) devices. The effects of elastic strain on the agglomeration of the coherent silicide film embedded in an infinite matrix are studied employing continuum linear elasticity and finite-difference numerical method. The interface atomic diffusion is taken to be the dominant transport mechanism where both capillarity and elastic strain are considered for the driving forces. Under plane strain condition with elastically homogeneous and anisotropic system with cubic symmetry, the dilatational misfit and the tetragonal misfit in the direction parallel to the film thickness are considered. The numerical results on the shape evolution agree with the known trend that the equilibrium aspect ratio of the film increases with the elastic strain intensity. When the elastic strain intensity is taken to be only a function of the film size, the flat film morphology with a large aspect ratio becomes increasingly unstable since the equilibrium aspect ratio decreases, as the film scales. The shape evolution results in a large decrease in contact to silicon area, and may deteriorate the electrical performances.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.4
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• pp.239-245
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• 2000

A copper-tungsten sintered alloy(WCu) has been friction-welded to a tough pitch copper (Cu) in order to investigate friction weldability. The maximum tensile strength of the SWu-Cu friction welded joints had cp to 96% of those of the Cu base metal under the condition of friction time 0.6sec, friction pressure 45MPa, upset pressure 125MPa and upset time 5.0sec. And it is confirmed that the tensile strength of friction welded joints are influenced highly by upset pressure rather than friction time. And it is considered that mixed layer was formed in the Cu adjacent side to the weld interface, W particles included in mixed layer induced fracture in the Cu adjacent side to the weld interface and also, thickness of mixed layer was reduced as upset pressure increase.

• Progress in Superconductivity and Cryogenics
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• v.22 no.3
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• pp.1-6
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• 2020

This paper presents the analysis results on the electrical output performance characteristics of a 746 W high temperature superconducting generator (HTSG). The HTS field winding is charged by non-contact excitation method, i.e., contactless superconducting field exciter (CSFE) which is originated by rotary flux pump based on permanent magnet. In this paper, the preliminary current charging test was carried out using a 70 A CSFE to evaluate the performance of field exciter and analyze its non-contact excitation characteristics for the full-scale HTS field winding of the 746 W HTSG. First, the various contactless current-charging tests were conducted using assembly with HTS field winding and CSFE. Then, in order to estimate the output power performance characteristics of the 746 W HTSG, finite element analysis was conducted based on field excitation information which is experimentally measured under various operating conditions. Finally, the electrical output characteristics in no-load and load models were simulated by two-dimensional transient solver in ANSYS electromagnetics 19.0 release.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.610-614
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• 2008

In this work, the electrical and optical properties of the two different p-type GaN electrode schemes, ZnNi/ITO and ZnNi/Au, were compared each other, and applied to the top-emitting GaN/InGaN light-emitting diodes (LEDs). The ZnNi/ITO electrode showed much higher transmittance (90%) and slightly lower contact resistance $(1.27{\times}10^{-4}{\Omega}cm^2)$ than those (77%, $(2.26{\times}10^{-4}{\Omega}cm^2)$) of the ZnNi/Au at a wavelength of 460 nm. In addition, GaN LEDs having ZnNi/ITO showed accordingly higher light output power and luminous intensity than those having ZnNI/Au did at the current levels up to 1 A.