• 반도체디스플레이기술학회지
• /
• 제17권4호
• /
• pp.66-69
• /
• 2018

This study was researched the electrical properties of semiconductor devices such as ITO, $SiO_2$, $V_2O_5$ thin films. The films of ITO, $SiO_2$, $V_2O_5$ were deposited by the rf magnetron sputtering system with mixed gases of oxygen and argon to generate the plasma. All samples were cleaned before deposition and prepared the metal electrodes to research the current-voltage properties. The electrical characteristics of semiconductors depends on the interface's properties at the junction. There are two kinds of junctions such as ohmic and schottky contacts in the semiconductors. In this study, the ITO thin film was shown the ohmic contact properties as the linear current-voltage curves, and the electrical characteristics of $SiO_2$ and $V_2O_5$ films were shown the non-linear current-voltage curves as the schottky contacts. It was confirmed that the electronic system with schottky contacts enhanced the electronic flow owing to the increment of efficiency and increased the conductivity. The schottky contact was only defined special characteristics at the semiconductor and the interface depletion layer at the junction made the schottky contact which has the effect of leakage current cutoff. Consequently the semiconductor device with shottky contact increased the electronic current flow, in spite of depletion of carriers.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2005년도 춘계학술대회 논문집 전기설비전문위원
• /
• pp.75-78
• /
• 2005

The decisive criteria to determine collection performance is the contact force between pantograph and catenary. The contact force consists of a static force and dynamic force related to vibration characteristics, train speed and etc. The low contact force leads to the loss of contact, and most countries regulate it below 1% at operation speed. This study presents a technical overview of criteria for collection performance of catenary system.

• 한국전기전자재료학회논문지
• /
• 제29권7호
• /
• pp.440-444
• /
• 2016

Titanium oxide ($TiO_2$) thin films were synthesized on polymer insulator and Si substrates by atomic layer deposition (ALD) method. The surface and electrical properties of $TiO_2$ films synthesized at various ALD cycle numbers were investigated. The synthesized $TiO_2$ films exhibited higher contact angle and smooth surface. The contact angle of $TiO_2$ films was increased with the increase of ALD-cycle number. Also, the rms surface roughness of films was slightly rough with the increase of ALD-cycle number. The leakage current on $TiO_2$ film surface synthesized at various conditions were uniformed, and the values were decreased with the increase of ALD-cycle number. In the results, the performance of $TiO_2$ films for self-cleaning critically depended on a number of ALD-cycle.

• 한국전기전자재료학회논문지
• /
• 제20권1호
• /
• pp.86-91
• /
• 2007

Contact material is widely used as electrical parts. Ag-CdO has a good wear resistance and stable contact resistance. But the disadvantages of Ag-Cd alloy are coarse Cd oxides and harmful metal, Cd. Then Ag-Sn alloy that has stable and fine Sn oxide at high temperature has been developed. In order to investigate the effect of Te additional that affects the formation of the oxide layer on the surface and the formation of oxide in matrix Ag, we studied the microstructures and properties of Ag-Sn-In(-Te) material fabricated by rapid solidification process. The experimental procedure were melting using high frequency induction, melt spinning, and internal oxidation. Specimens were examined and analyzed by Transmission electron microscopy(TEM), energy dispersive X-ray spectroscopy(EDS) and Vickers hardness. As a result, internal oxidation was completed even at $600^{\circ}C$. Te forms coarse $In_{2}TeO_{6}$ phase and makes fine and well dispersed $SnO_{2}$ Phase. 0.3 wt% Te shows favorable properties.

• 한국마이크로전자및패키징학회:학술대회논문집
• /
• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
• /
• pp.195-202
• /
• 2003

In this study, failure mechanisms of Au stud bumps/ACF flip chip joints were investigated underhigh current stressing condition. For the determination of allowable currents, I-V tests were performed on flip chip joints, and applied currents were measured as high as almost 4.2Amps $(4.42\times10^4\;Amp/cm^2)$. Degradation of flip chip joints was observed by in-situ monitoring of Au stud bumps-Al pads contact resistance. All failures, defined at infinite resistance, occurred at upward electron flow (from PCB pads to chip pads) applied bumps (UEB). However, failure did not occur at downward electron flow applied bumps (DEB). Only several $m\Omega$ contact resistance increased because of Au-Al intermetallic compound (IMC) growth. This polarity effect of Au stud bumps was different from that of solder bumps, and the mechanism was investigated by the calculation of chemical and electrical atomic flux. According to SEM and EDS results, major IMC phase was $Au_5Al_2$, and crack propagated along the interface between Au stud bump and IMC resulting in electrical failures at UEB. Therefore. failure mechanisms at Au stud bump/ACF flip chip Joint undo high current density condition are: 1) crack propagation, accompanied with Au-Al IMC growth. reduces contact area resulting in contact resistance increase; and 2) the polarity effect, depending on the direction of electrons. induces and accelerates the interfacial failure at UEBs.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.356-362
• /
• 2004

Using multi wrapped copper by polyimide film for HTS transformer, the breakdown and V-t characteristics of two type models for turn-to-turn, one is point contact model, the other is surface contact model, were investigated under ac and impulse voltage at 77 K. A material that is Polyimide film (Kapton) 0.025 mm thickness is used for multi wrapping of the electrode. Statistical analysis of the results using Weibull distribution to examine the wrapping number effects on V-t characteristics under at voltage as well as breakdown voltage under ac and impulse voltage in $LN_2$ was carried. Also, survival analysis was performed according to the Kaplan-Meier method. The breakdown voltages for surface contact model are lower than that of the point contact model, because the contact area of surface contact model is wider than that of point contact model. At the same time, the shape parameter of the point contact model is a little bit larger than the of the surface contact model. The time to breakdown tn is decreased as the applied voltage is increased, and the lifetime indices slightly are increased as the number of layers is increased. According to the increasing applied voltage and decreasing wrapping number, the survival probability is increased.

• 전기학회논문지
• /
• 제63권6호
• /
• pp.855-859
• /
• 2014

Quality criteria for interaction between a pantograph and overhead contact wire is a most important requirement to assess of the performance for the current collection system. Interaction performance between pantograph and catenary system is subject to approval by the infrastructure manager when a new design and contraction of overhead contact line and pantograph are installed. Among the various performance, percentage of arcing at maximum line speed is a simple test method compared with contact force of pantograph due to direct sensing of pantagraph, calibrations, installations of train, and etc. On the other hand, percentage of arcing is need to reliable arcing detector and general requirements with accordance with EN 50317. In this paper, percentage of arcing are investigated on the function of duration of arc and proposed which is satiable of percentage of arcing. As a results, we proposed which duration of arcs are unsuitable from infrastructures point of view as performance testing for quality of current collection.

• 대한금속재료학회지
• /
• 제48권6호
• /
• pp.565-569
• /
• 2010

We report on the characteristics of indium-oxide-doped ZnO (IZO) ohmic contact to p-GaN. The IZO ohmic contact layer was deposited on p-GaN by a Roll-to-Roll (RTR) sputter method. IZO contact film with a thickness of 360, 230 and 100 nm yielded an ohmic contact resistance of $4.70{\times}10^{-4}$, $5.95{\times}10^{-2}$, $4.85{\times}10^{-1}\;{\Omega}cm^{2}$ on p-GaN when annealed at $600{^{\circ}C}$ for 1 min under a nitrogen ambient, respectively. While the transmittance of IZO film with a thickness of 360 nm slightly increased in the wavelength range of 380-800 nm after annealing, the transmittance rapidly increased up to 80% after annealing at $600{^{\circ}C}$ in the wavelength range of 380~430 nm because the crystallization of IZO film and created Ga vacancies near the p-GaN surface region were affected by the annealing. These results indicate that ohmic contact resistance and transmittance of the IZO films improved.

• 한국항행학회논문지
• /
• 제27권2호
• /
• pp.203-208
• /
• 2023

본 연구에서는 정전류 회로와 전압 강하법을 이용한 접촉 저항 측정 회로의 정밀도를 개선하는 방법을 제안하고, MQTT 브로커 서버를 통해 접촉 저항 측정 시스템의 측정값을 모니터링할 수 있는 대시보드를 구현한다. 접촉 저항 측정 시스템은 저항값을 측정하고 무선통신을 이용해 MQTT 브로커 서버로 측정값을 전달하고, 대시보드는 Node-RED와 Node-RED-Dashboard을 이용하여 최대 4개의 접촉저항 측정 시스템의 저항값을 받아 이를 사용자 화면에 출력하여 보여준다. 사용자는 하나의 대시보드를 이용해 복수의 측정 데이터를 관리할 수 있고, MQTT 브로커 서버를 통해 다른 장치와 쉽게 인터페이스 가능하게 한다. 실제 데이터 측정을 통해 정밀도 상대표준편차가 평균적으로 40.37%, 그리고 최대 64.73% 각각 감소하여 정밀도의 개선 효과가 있다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 하계학술대회 논문집 D
• /
• pp.1950-1952
• /
• 1999

Pentacene thin films are a component for active layer of Organic thin film transistors. Pentacene film was deposited by Organic Molecular Beam Deposition(OMBD) and electrodes were deposoted by vacuum evaporation. Electrical characterization of Pentacene films were measured by two probe methods, as the results. The Au/Pentacene/Al contact is Ohimic contact. Band diagram of pentacene films were measured by UV-spectrum and Cyclic-Voltammetry method.