• Title/Summary/Keyword: Electrical Contact

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The Effects of Composition on the Interface Resistance in Bi-System Glass Frit (Bi 계열 Glass Frit 조성이 계면저항에 미치는 영향)

  • Kim, In Ae;Shin, Hyo Soon;Yeo, Dong Hun;Jeong, Dae Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.12
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    • pp.858-862
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    • 2013
  • The front electrode should be used to make solar cell panel so as to collect electron. The front electrode is used by paste type, printed on the Si-solar cell wafer and sintered at about $800^{\circ}C$. The paste is composed Ag powder and glass frit which make the ohmic contact between Ag electrode and n-type semiconductor layer. From the previous study, the Ag electrodes which used two commercial glass frit of Bi-system were so different on the interface resistance. The main composition of them was Bi-Zn-B-Si-O and few additives added in one of them. In this study, glass frit was made with the ratio of $Bi_2O_3$ and ZnO on the main composition, and then paste using glass frit was prepared respectively. And, also, the paste using the glass frit added oxide additives were prepared. The change of interface resistance was not large with the ratio of $Bi_2O_3$ and ZnO. In the case of G6 glass frit, 78 wt% $Bi_2O_3$ addition, the interface resistance was $190{\Omega}$ and most low. In the glass frit added oxide, the case of Ca increased over 10 times than it of G6 glass frit on the interface resistance. It was thaught that after sintering, Ca added glass frit was not flowed to the interface between Ag electrode and wafer but was in the Ag electrode.

Correlation between the Active-Layer Uniformity and Reliability of Blue Light-Emitting Diodes (청색 발광 다이오드에서 활성층의 균일성과 신뢰성 사이의 상관관계 고찰)

  • Jang Jin-Won;Kim Sang-Bae
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.12
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    • pp.27-34
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    • 2005
  • We have investigated the correlation between the active-layer uniformity and reliability of InGaN/GaN blue LEDs. According to initial characteristics, the devices are classified into two groups: group I devices of uniform light-emission and group II devices of non-uniform light-emission. The group II devices are more dependent on temperature and we have found two degradation mechanisms through reliability test. One is bulk degradation in which the degradation occurred over the entire chip and another one is edge degradation in which the degradation occurred from the edge of the chip. Bulk degradation caused by the nonradiative defects is found to be faster in group II devices while there is no difference in the rate of the much faster edge degradation, where darkening starts from the n-Ohmic contact edge. Therefore, more uniform active layer, more uniform current spreading, and the passivation of the dry-etched side-wall are essential for the high reliability of InGaN/GaN LEDs.

MoOx-Windowed High-Performing Transparent Photodetector (MoOx 기반의 고성능 투명 광검출기)

  • Park, Wang-Hee;Lee, Gyeongnam;Kim, Joondong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.6
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    • pp.387-392
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    • 2017
  • A high-performing all-transparent photodetector was created by configuring a $MoO_x$/NiO/ZnO/ITO structure on a glass substrate. The ITO bottom layer was applied as a back contact. To achieve the transparent p/n junction, p-type NiO was coated on the n-type ZnO layer. Reactive sputtering was used to spontaneously form the ZnO or NiO layer. In order to improve the transparent photodetector performance, the functional $MoO_x$ window layer was used. Optically, the $MoO_x$ window provided a refractive index layer (n=1.39) lower than that of NiO (n=2), increasing the absorption of the incident light wavelengths (${\lambda}s$). Moreover, the $MoO_x$ window can provide a lower sheet resistance to improve the carrier collection for the photoresponses. The $MoO_x$/NiO/ZnO/ITO device showed significantly better photoresponses of 877.05 (at ${\lambda}$=460nm), 87.30 (${\lambda}$=520 nm), and 30.38 (${\lambda}$=620 nm), compared to 197.28 (${\lambda}$=460 nm), 51.74 (${\lambda}$=520 nm) and 25.30 (${\lambda}$=620 nm) of the NiO/ZnO/ITO device. We demonstrated the high-performing transparent photodetector by using the multifunctional $MoO_x$ window layer.

Electrode formation using Light induced electroless plating in the crystalline silicon solar cells

  • Jeong, Myeong-Sang;Gang, Min-Gu;Lee, Jeong-In;Kim, Dong-Hwan;Song, Hui-Eun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.347.1-347.1
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    • 2016
  • Screen printing is commonly used to form the electrode for crystalline silicon solar cells. However, it has caused high resistance and low aspect ratio, resulting in decrease of conversion efficiency. Accordingly, Ni/Cu/Ag plating method could be applied for crystalline silicon solar cells to reduce contact resistance. For Ni/Cu/Ag plating, laser ablation process is required to remove anti-reflection layers prior to the plating process, but laser ablation results in surface damage and then decrease of open-circuit voltage and cell efficiency. Another issue with plating process is ghost plating. Ghost plating occurred in the non-metallized region, resulting from pin-hole in anti-reflection layer. In this paper, we investigated the effect of Ni/Cu/Ag plating on the electrical properties, compared to screen printing method. In addition, phosphoric acid layer was spin-coated prior to laser ablation to minimize emitter damage by the laser. Phosphorous elements in phosphoric acid generated selective emitter throughout emitter layer during laser process. Then, KOH treatment was applied to remove surface damage by laser. At this step, amorphous silicon formed by laser ablation was recrystallized during firing process and remaining of amorphous silicon was removed by KOH treatment. As a result, electrical properties as Jsc, FF and efficiency were improved, but Voc was lower than screen printed solar cells because Voc was decreased due to surface damage by laser process. Accordingly, we expect that efficiency of solar cells could be improved by optimization of the process to remove surface damage.

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Controlling the surface energy and electrical properties of carbon films deposited using unbalanced facing target magnetron sputtering plasmas

  • Javid, Amjed;Kumar, Manish;Yoon, Seok Young;Lee, Jung Heon;Han, Jeon Geon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.231.1-231.1
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    • 2015
  • Surface energy, being an important material parameter to control its interactions with the other surfaces plays a key role in bio-related application. Carbon films are found very promising due to their characteristics such as wear and corrosion resistant, high hardness, inert, low resistivity and biocompatibility. The present work deals with the deposition of carbon films using unbalanced facing target magnetron sputtering technique. The discharge characteristics were studied using optical emission spectroscopy and correlated with the film properties. Surface energy was investigated through contact angle measurement. The ID/IG ratio as calculated from Raman spectroscopy data increases with the increase in power density due to the higher number of sp2 clusters embedded in the amorphous matrix. The deposited films were smooth and homogeneous as observed by Atomic force microscopy having RMS roughness in the range of 1.74 to 2.25 nm. It is observed that electrical resistivity and surface energy varies in direct proportionality with operating pressure and has inverse relation with power density. The surface energy results clearly exhibited that these films can have promising applications in cell cultivation.

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The Characteristics of High Ozone Concentration.Yield Multi-discharge Type Ozonizer for Water Environment Improvement (수질환경개선용 고농도.고수율 다중방전형 오존발생기의 특성)

  • Song, Hyun-Jig;Rahman, M. F.;Kim, Yeong-Hun;Kim, Geun-Young;Park, Won-Zoo;Lee, Kwang-Sik
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.13 no.2
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    • pp.71-79
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    • 1999
  • In this paper, high concentration.yield trulti-discharge type ozonizer( MDO ) of new discharge type using superposed silent discharge was designed and manufactured MDO can be consisted with 3 kind of superposed silent discharge type ozmizer( SDO ) in accordance with power supply method that suwlying power, which has $180[^{\circ}]$ phase difference, to 3 electrodes and amble gap. At the rroment, discharge characteristics and ozone generation characteristics of each SDO were investigated in accordance with quantity of suwlied gas, the number of SDO, and the shapes of each SDO. In result, ozone generatioo characteristics of 17185[ppm] and 783[g/kWh] were obtained, and when ozone of 17185[ppm] was in contact with dyeing water waste, decolorization characteristics was excellent, so it confinred that MDO could be used as water environment improvement facility.cility.

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Multi-layered Coating Deposited on PEMFC (Proton Exchange Membrane Fuel Cell) Bipolar Plates (고분자전해질 연료전지용 바이폴라 플레이트의 다층 코팅의 증착)

  • Yun, Young-Hoon;Chung, Hoon-Taek;Cha, In-Su;Choi, Jeong-Sik;Kim, Dong-Mook;Jung, Jin-Ho
    • Journal of the Korean Ceramic Society
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    • v.45 no.8
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    • pp.472-476
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    • 2008
  • The surface region of commercial stainless steel 304 and 316 plates has been modified through deposition of the multi-layered coatings composed of titanium film ($0.1{\mu}m$) and gold film ($1-2{\mu}m$) by an electron beam evaporation method. XRD patterns of the stainless steel plates deposited with conductive metal films showed the peaks of the external gold film and the stainless steel substrate. Surface microstructural morphologies of the stainless steel bipolar plates modified with multi-layered coatings were observed by AFM and FE-SEM images. The stainless steel plates modified with $0.1{\mu}m$ titanium film and $1{\mu}m$ gold film showed microstructure of grains of under 100 nm diameter. The external surface of the stainless steel plates deposited with $0.1{\mu}m$ titanium film and $2{\mu}m$ gold film represented somewhat grain growth of Au grains in FE-SEM image. The electrical resistance and water contact angle of the stainless steel bipolar plates modified with multi-layered coatings were examined with the thickness of the gold film.

Use of a Transformed Diode Equation for Characterization of the Ideality Factor and Series Resistance of Crystalline Silicon Solar Cells Based on Light I-V Curves (Light I-V 곡선을 이용한 결정질 태양전지의 이상계수와 직렬 저항 특성 분석)

  • Jeong, Sujeong;Kim, Soo Min;Kang, Yoonmook;Lee, Hae-seok;Kim, Donghwan
    • Korean Journal of Materials Research
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    • v.26 no.8
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    • pp.422-426
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    • 2016
  • With the increase in installed solar energy capacity, comparison and analysis of the physical property values of solar cells are becoming increasingly important for production. Therefore, research on determining the physical characteristic values of solar cells is being actively pursued. In this study, a diode equation, which is commonly used to describe the I-V behavior and determine the electrical characteristic values of solar cells, was applied. Using this method, it is possible to determine the diode ideality factor (n) and series resistance ($R_s$) based on light I-V measurements. Thus, using a commercial screen-printed solar cell and an interdigitated back-contact solar cell, we determined the ideality factor (n) and series resistance ($R_s$) with a modified diode equation method for the light I-V curves. We also used the sun-shade method to determine the ideality factor (n) and series resistance ($R_s$) of the samples. The values determined using the two methods were similar. However, given the error in the sun-shade method, the diode equation is considered more useful than the sun-shade method for analyzing the electrical characteristics because it determines the ideality factor (n) and series resistance ($R_s$) based on the light I-V curves.

Effects of Silicone Fluids on Insulation Properties of Silicone Rubber (Silicone Fluid들이 실리콘 고무의 절연특성에 미치는 영향(1))

  • Kang, Dong-Pil;Park, Hoy-Yul;Ahn, Myeong-Sang;Kim, Dae-Whan;Lee, Hoo-Bum;Oh, Se-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05e
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    • pp.40-43
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    • 2003
  • 전기방전에 대한 shed 재료의 열화내성과 우수한 발수성의 장기간 유지특성은 폴리머 애자의 장기성능에 있어서 가장 중요한 인자들이다. 애자 제조시 무결점 성형성 또한 중요한데 열화내성을 확보하기 위해 다량의 ATH의 첨가가 수반되기 때문에 적절한 process oil의 사용이 불가피하다. 사용하는 오일의 종류와 량에 따라 옥외절연물의 장기성능에 영향을 주는 표면발수성이나 방전내성은 크게 차이가 나는 것으로 밝혀지고 있다. 본 논문에서는 화학적 구조와 정도가 다른 몇 가지 실리콘 fluid들을 실리콘 고무에 처방하여 기본물성과 초고압 옥외절연물의 shed 재료로서 장기성능에 영향을 주는 방전열화내성과 표면발수성의 회복특성을 평가하였다. 실리콘 고무의 무결점 사출성형에 가소도가 중요한데 동일한 무기물 첨가조건에서 유사한 가소도를 갖게 하는데 필요한 량은 fluid들의 종류에 따라서 상당한 차이가 있었다. 특히 PDMS는 점도는 낮지만 분자량이 커서 많은 량이 첨가되어 기계적 특성저하가 크게 일어났다. 코로나 처리후 발수성 회복특성은 fluid들의 분자크기와 반응기의 종류에 따라 상당히 영향을 받았으며 분자가 클수록 초기회복속도는 다소 느려도 최종의 상시발수성은 다소 높게 유지되었으며 2일 이내에 거의 초기 접촉각으로 회복되었다. 내아크성은 무게손실이 적을수록 오차범위도 작은 안정된 특성을 보였으며 fluid들의 종류에 따른 무게손실의 차이는 크지 않았다. 트래킹 방전에 의한 무게 감소는 fluid의 분자가 크면서 페닐기를 가진 fluid들이 첨가된 고무가 우수한 특성을 보였다.

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Potential Reduction and Energy Dispersion Due to Ionization Around the Submerged Ground Rod (수중에 잠긴 접지전극 주변에서의 이온화에 의한 전위저감 및 에너지방출)

  • Choi, Jong-Hyuk;Ahn, Sang-Duk;Yang, Soon-Man;Lee, Bok-Hee
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.23 no.1
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    • pp.92-99
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    • 2009
  • Deeply-driven ground rod in the rainy season may contact with rainwater and ground water. When surge voltages are applied to the submerged ground rods, the ionization around the ground rods are occurred. Ionization in soil and/or water is affected in dynamic performance of ground rod systems. This work aims at studying the transient performance of ground rod system under impulse voltage using scale model in an electrolytic tank. The potential reduction and energy dispersion caused by ionization were treasured and quantitatively analyzed using the Matlab Program. As a result, the peak voltage at the terminal of ground rod was varied with water resistivity and charging voltage of Marx generator. The potential at the terminal of the ground rod was approximately reduced to a half of the applied voltage just below breakdown voltage. Also the energy more than half of the applied energy was dispersed through the ground rod due to ionization just below breakdown voltage.