• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1119-1122
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• 2003

In this paper, the electric field distribution in dielectric tube with one layer and spherical dielectric in water was simulated. The reactor was made up of the spherical dielectric that is diameter 2.5[mm], ${\epsilon}_r$ : 5, 100, 1000, 5000 respectively and one glass plate being 2[mm] thickness, ${\epsilon}_r$ : 5 as electrode. The discharge gap was 7[mm]. As a result of the simulation, in case of being about the same value between the dielectric constant of spherical dielectric and water, when the reactor was applied to high voltage dielectric polarization characteristic was trending toward disappearance. To get more strong electric field, the dielectric constant should be higher comparatively, Increasing the spherical dielectric constant, the location of equippotential line was shifting from the interior to the exterior.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1143-1146
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• 2003

This paper was simulated the electric field distribution in dielectric tube with two layers and spherical dielectric in water. The reactor was made up of the spherical dielectric that is diameter : 2.5[mm], ${\epsilon}_r$ : 5, 25, 100, 1000, 5000 respectively and two glass plate being 2[mm] thickness, ${\epsilon}_r$ : 5 as electrode. The discharge gap was 9[mm]. As a result of the simulation, in case of being about the same value between the dielectric constant of spherical dielectric and water, when the reactor was applied to high voltage, dielectric polarization characteristic was trending toward disappearance. To get more strong electric field, the dielectric constant should be higher comparatively, Increasing the spherical dielectric constant, the location of equippotential line was shifting from the interior to the exterior.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.44-47
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• 2003

In this paper, the electric field distribution in dielectric tube with one layer and spherical dielectric($ZrO_2$) in water was simulated. The reactor was made up of the spherical dielectric that is diameter : 3.0[mm], $ZrO_2(\varepsilon_r:10)$ and one glass plate of thickness(2[mm]), $\varepsilon_r$(10) as electrode. The discharge gap was 8[mm]. To get more strong electric field, the dielectric constant should be higher comparatively. Using the spherical dielectric for water discharge in dielectric tube, the location of equipotential line was shifting from the interior to the exterior. At real water discharge experimental, ozone was measured higher dissolved ozone in water at condition of water rate(l[l/min]) and injector than condition of non-injector or 2~3[l/min].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.40-43
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• 2003

In this paper, the electric field distribution in dielectric tube with one layer and spherical dielectric(glass) in water was simulated. The reactor was made up of the spherical dielectric that is diameter : 3.0[mm], glass(${\varepsilon}_r$:5) and one glass plate of thickness(2[mm]), ${\varepsilon}_r$(5) as electrode. The discharge gap was 8[mm). Toget more strong electric field, the dielectric constant should be higher comparatively. Using the spherical dielectric for water discharge in dielectric tube, the location of equipotential line was shifting from the interior to the exterior. At real water discharge experimental, $H_2O_2$ was measured higher generated $H_2O_2$ in water at condition of water rate(1[l/min]) and injector than condition of non-injector or 2-3[l/min])

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2004.11a
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• pp.241-245
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• 2004

The electric safety tends to be more important according to electric facilities's increase and its use in these days. This paper analyzes soil resistivity of two areas in the country using CDEGS(Current Distribution, Electromagnetic Interference, Grounding and Soil Structure, Canada). We designed rod and mesh grounding system and made a comparative study of ground resistance, GPR(Main Electrode Potential Rin), step voltage and touch voltage. Then we could analyz only the safety but also economical efficiency in elocution of grounding. As a result of simulation, ground resistance, GPR(Main Electrode Potential Rise), step voltage and touch voltage became higher in proportion to soil resistivity. Therefore we expect to estimate the propriety of grounding system design through accumulation and analysis of data in consideration of characteristics of soil.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1447_1448
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• 2009

In this paper, each specimen blended at weight proportions of 80% HDPE to 20% EVA, 70% HDPE to 30% EVA, 60% HDPE to 40% EVA, and 50% HDPE to 50% EVA was manufactured respectively. The insulation performances of the proposed insulator were compared with conventional XLPE, main insulating material of CV cable on the basis of the investigation results of DC insulation performances. From the space charge density, electric field and potential profiles with raising DC voltage and time variation in HE82, distortion of electric field distribution was improved. As EVA mixed into the bulks acts as nucleation in crystallization process of HDPE, the size of spherulites became decreased and finally formed continuous network structure. Ultimately it resulted from extinction of space charge in the interfacial region of spherulites.

• Journal of Electrical Engineering and Technology
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• v.8 no.6
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• pp.1481-1486
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• 2013

In this paper, a new two dimensional (2D) analytical model of a Dual Material Gate tunnel field effect transistor (DMG TFET) is presented. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expressions for surface potential and electric field are derived. The electric field distribution can be used to calculate the tunneling generation rate and numerically extract tunneling current. The results show a significant improvement of on-current and reduction in short channel effects. Effectiveness of the proposed method has been confirmed by comparing the analytical results with the TCAD simulation results.

• Structural Engineering and Mechanics
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• v.60 no.2
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• pp.271-299
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• 2016

In this article, based on the higher-order shear deformation plate theory, buckling analysis of a rectangular plate made of functionally graded piezoelectric materials and its effective parameters are investigated. Assuming the transverse distribution of electric potential to be a combination of a parabolic and a linear function of thickness coordinate, the equilibrium equations for the buckling analysis of an FGP rectangular plate are established. In addition to the Maxwell equation, all boundary conditions including the conditions on the top and bottom surfaces of the plate for closed and open circuited are satisfied. Considering double sine solution (Navier solution) for displacement field and electric potential, an analytical solution is obtained for full simply supported boundary conditions. The accurate buckling load of FGP plate is presented for both open and closed circuit conditions. It is found that the critical buckling load for open circuit is more than that of closed circuit in all loading conditions. Furthermore, it is observed that the influence of dielectric constants on the critical buckling load is more than those of others.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.6
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• pp.49-56
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• 2011

Grounding system insures a reference potential point for electric devices and also provides a low impedance path for fault currents or transient currents in the earth. The ground impedance as function of frequency is necessary for determining its performance since fault currents could contain a wide range of frequencies. In this paper, the grounding resistance, grounding impedance and transient grounding impedance are measured by using 3-point fall-of-potential method in order to analyse grounding characteristics of the copper and concrete rod grounding electrodes. An equivalent transfer function model of the ground impedance and transient grounding impedance are identified from the measured values by using ARMA method and evaluated by comparing the conventional grounding impedance.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.4
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• pp.287-298
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• 2007

A two-dimensional treatment of the potential distribution under the depletion approximation is presented for poly-crystalline silicon thin film transistors. Green's function approach is adopted to solve the two-dimensional Poisson's equation. The solution for the potential distribution is derived using Neumann's boundary condition at the silicon-silicon di-oxide interface. The developed model gives insight into device behavior due to the effects of traps and grain-boundaries. Also short-channel effects and drain induced barrier lowering effects are incorporated in the model. The potential distribution and electric field variation with various device parameters is shown. An analysis of threshold voltage is also presented. The results obtained show good agreement with simulated results and numerical modeling based on the finite difference method, thus demonstrating the validity of our model.