• Title/Summary/Keyword: Electric field emission

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Field emission properties of expanded graphite composite

  • Alegaonkar, P.S.;Park, J.H.;Jeon, S.Y.;Shin, J.H.;Berdinsky, A.S.;Yoo, J.B.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.775-777
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    • 2007
  • Field emission properties of expanded graphite composite have been studied. Composite has been synthesized via shear mixing expanded graphite in ${\alpha}-terpineol$ and ethyl cellulose. Field emission properties, of screen printed composite has been measured at a static applied electric field. The details of the analysis have been presented.

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Fabrication of CNT Electron Source for Field Emission Displays

  • Nakata, S.;Sawada, T.;Fujikawa, M.;Nishimura, K.;Abe, F.;Hosono, A.;Watanabe, S.;Yamamuro, T.;Shen, Z.;Suzuki, Y.;Okuda, S.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1012-1015
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    • 2005
  • We have developed the technique of fabricating triode structure with simple stacking method using a polymer insulator that is suitable for large panel and the activation method after the fabrication. By the techniques, a test panel was manufactured and proves good emission property and uniformity.

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Characteristics of electric field in the liquid metal ion source with a suppressor

  • Min, Boo-Ki;Cho, Byeong-Seong;Oh, Hyun-Joo;Kang, Seung-Oun;Choi, Eun-Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.283-283
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    • 2010
  • The liquid metal ion sources(LMIS) in FIB system have many advantages of high current density, high brightness and low ion energy spread. Most FIB systems use LMIS because the ion beam spot size of LMIS is smaller than other ion sources. LMIS is basically emitted by an extractor but the new electrode called the suppressor is able to control the emission current. We investigated characteristics LMIS with a suppressor, the function of the suppressor in LMIS, the change of the electric field by the suppressor and the advantages of using the suppressor. The characteristics of the threshold voltage and current-voltage (I-V) were observed under the varying extracting voltage with floated suppressor voltage, and under the varying suppressor voltages with fixed extractor voltage. We also simulated LMIS with the suppressor through CST(Computer Simulation Technology). The emission current increases as the suppressor voltage decreases because the suppressor voltage which restrains the electric field goes down, The threshold voltage increases as the suppressor voltage increases. We can explain characteristics and functions of LMIS with a suppressor using the electric field.

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Analysis of Electric Fields at Field Emission Display Tipes Using the Image Charge Method and 3-D Numerical Analysis (영상전하법과 3차원 수치해석을 이용한 Field Emission Display Tip 전계의 해석과 그 비교)

  • Min, Sung-Wook;Lee, Byoung-Ho
    • Proceedings of the KIEE Conference
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    • 1995.11a
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    • pp.558-560
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    • 1995
  • Tunneling current from filed emission display tips is calculated by numerical analysis using a finite element method software. For simple tip structures it is shown that the image charge method could provide an efficient way to estimate the tunneling current.

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Effect of an AI underlayer on the Growth of Carbon Nanotubes and Their Field Emission Characteristics (알루미늄 하부층이 탄소나노튜브의 성장 및 전계방출 특성에 미치는 영향)

  • Lee, Seung-Hwan;Goak, Jeung-Choon;Lee, Han-Sung;Lee, Nae-Sung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.2
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    • pp.162-172
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    • 2008
  • We studied the effect of an Al underlayer on the growth of carbon nanotubes (CNTs) and their field emission characteristics, First of all, CNTs were grown on the Invar catalyst layers with different thickness of 1 to 10 nm, showing that the CNT length was saturated for the catalyst 5 nm or thicker. The CNTs grown on the 5-nm-thick catalyst were ${\sim}10{\mu}m$ long and ${\sim}30nm$ in diameter. Second, an Al underlayer was applied between the catalyst layer and the Ti diffusion barrier to reduce the diameters of CNTs for better field emission properties by forming spherical Al oxide particles on which smaller catalyst nanoparticles would occur. The optimal thickness of an Al underlayer underneath the 5-nm-thick catalyst was ${\sim}15nm$, producing the CNTs with the length of ${\sim}15{\mu}m$ and the diameter of ${\sim}15nm$. The field emission measurements, following the tape activation, showed that the thinner and longer CNTs gave rise to better field emission performance with the lower turn-on and threshold electric fields.

Electron field emission from various CVD diamond films

  • Usikubo, Koji;Sakamoto, Yukihiro;Takaya, Matsufumi
    • Journal of the Korean institute of surface engineering
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    • v.32 no.3
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    • pp.385-388
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    • 1999
  • Electron field emission properties from various CVD diamond films were studied. Diamond films were synthesized by microwave plasma CVD at 1173K and at 673K substrates temperature and pulse microwave plasma CVD at 1173K. B-doped diamond film was synthesized by microwave plasma CVD at 1173K also. Estimation by SEM, both the non-doped diamond film and B-doped diamond film which were synthesized at 1173K substrate temperature were $2~3\mu\textrm{m}$ in diameter and nucleation densities were $10^{8}{\;}numbers/\textrm{cm}^2$ order. The diamond film synthesized at 673K was $0.2\mu\textrm{m}$ in diameter and nucleation densities was 109 numbers/cm2 order. The diamond film synthesized by pulse microwave plasma CVD at 1173K was $0.2\mu\textrm{m}$ in diameter and nucleation density was $10^{9}{\;}numbers/\textrm{cm}^2$ order either. From the result of electron field emission measurement, electron field emission at $20V/\mu\textrm{m}$ from CVD diamond film synthesized by pulse microwave plasma CVD was $37.3\mu\textrm{A}/\textrm{cm}^2$ and the diamond film showed the best field emission property comparison with other CVD diamond.

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3-dimensional Electric Field Analysis for Field Emission Devices (전계방출소자의 3차원 전계해석)

  • Kim, Yeong-Hoon;Jung, Jae-Hoon;Lee, Byoung-Ho
    • Proceedings of the KIEE Conference
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    • 1997.11a
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    • pp.662-664
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    • 1997
  • 3-dimensional finite element method(FEM) electrical field analysis was performed to obtain electric fields on a field emission device tip in an array form. The simulation was performed by applying the Neumann boundary condition to the intermediate plane between tips. To verify our algorithm, comparison between simulation results and experimental data from another paper was made and the difference was discussed. Finally, analysis on triode structure was performed.

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Conducted Emission of Inverter Power Sources for Resistance Welding

  • Mecke H.;Doebbelin R.;Winkler T.;Fischer W.
    • Proceedings of the KIPE Conference
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    • 2001.10a
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    • pp.60-63
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    • 2001
  • Investigating electromagnetic emissions of inverter power sources for resistance welding existing special aspects of EMI measurements in the field of resistance welding machines resulting from the power rating and intermittent operation mode of these machines have to be taken into account. The characteristics of the internal switching processes determined by the behavior of the applied power semiconductors, snubber circuits and constructional aspects exert a great influence on the conducted emission of resistance welding inverters.

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A flat thin display with RF electron generation

  • Dijk, R. Van;Vissenberg, M.C.J.M.;Zwart, S.T. De
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.927-930
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    • 2004
  • We report on a new type of a flat and thin display with a secondary emission electron source. In this display device electrons are multiplied between two secondary emission plates under a high frequency electric field. This principle has a few important advantages over a field emission display: the emission comes from flat plates, which reduces the life-time problems of ion bombardment of field emitter tips. Furthermore, the electron emission is space charge limited which gives a uniform electron distribution. The electrons are extracted from the source and accelerated to a phosphor screen to generate light. Gray levels are made by pulse width modulation.

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Selective Growth of Multi-walled Carbon Nanotubes by Thermal Chemical Vapor Deposition and Their Field Emission Characteristics

  • Jeong, Se-Jeong;Lee, Seung-Hwan;Lee, Nae-Sung;Han, In-Taek;Kim, Ha-Jin;Kim, Jong-Min
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1096-1099
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    • 2005
  • Multi-walled carbon nanotubes (CNTs) grown on catalyst dots by thermal chemical vapor deposition were vertically aligned with a high population density. Such densely populated CNTs showed poor field emission characteristics due to the electrical screening effect. We reduced the number density of CNTs using an adhesive tape treatment. For dotpatterned CNTs, the tape treatment decreased the CNT density by three orders of magnitude, drastically improved the turn-on electric field from 4.8 to $1.8V/{\mu}m$, and changed the emission image from spotty to uniform luminescence. We also report long-term emission stability of dot-patterned CNTs by measuring the emission currents with time at different duty ratios.

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