• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.31-36
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• 2013

For the simplification of doping process in amorphous carbon film, arsenic (As) ions were implanted on the nucleated silicon wafer before the growth process. Then amorphous carbon films were grown at the condition of $CH_4/H_2=5%$ by microwave plasma chemical vapour deposition. Because the implanted seeds were grown at the high temperature and the implanted ions were spread, it was possible to reduce the process steps by leaving out the annealing process. When the implanted amorphous carbon films were electrically characterized in diode configuration, field emission current of $0.1mA/cm^2$ was obtained at the applied electric field of about $2.5V/{\mu}m$. The results show that the implanted As ions were sufficiently doped by the self-annealing process by using the growth after implantation.

• Aerospace Engineering and Technology
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• v.10 no.2
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• pp.82-86
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• 2011

This paper presents an RF Electric field assessment at 2.290 [GHz] inside launcher PROTON M/Breeze M long fairings, produced by COMS TM. COMS intentional RE due to TM ON under fairing has been assessed considering PROTON M / BREEZE M fairing characteristics. As fairings of all launchers present similar sizes, a similar E-field level under fairing is expected for the other launchers. As a result, the RE level under faring is compliant with COMS RS limits, but is not compliant with RS requirements of the launcher PROTON M/Breeze M.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.4
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• pp.159-163
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• 2003

ln this work, we studied electrical characteristics and leakage current mechanism of $Ta_2O_{5}$ MOS(Metal-Oxide-Semiconductor) devices. $Ta_2O_{5}$ thin film (63 nm) was deposited by ALD(Atomic Layer Deposition) method at temperature of 235 $^{\circ}C$. The structures of the $Ta_2O_{5}$ thin films were examined by XRD(X-Ray Diffraction). From XRD, it is found that the structure of $Ta_2O_{5}$ is single phase and orthorhombic. From capacitance-voltage (C-V) anaysis, the dielectric constant was 19.4. The temperature dependence of current density-electric field (J-E) characteristics of $Ta_2O_{5}$ thin film was studied at temperature range of 300 - 423 K. In ohmic region (<0.5 MV/cm), the resistivity was 2.456${\times}10^{14}$ ($\omega{\cdot}cm$ at 348 K. The Schottky emission is dominant at lower temperature range from 300 to 323 K and Poole-Frenkel emission is dominant at higher temperature range from 348 to 423 K.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.1
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• pp.15-21
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• 2002

We investigated effects of electrical, physical, and chemical parameters on energy transfer, NO conversion, and light emission in the dielectric barrier discharge (DBD) process. As gap distance between electrodes increased, discharge onset voltage increased. However, as gap distance between electrodes increased, electric field which initiates discharge showed approximately the same value, 30kV/cm. The discharge onset voltage of the coarse surface electrode was lower than that of the smooth surface electrode. And, energy transfer was slightly enhanced in the coarse electrode condition. However, NO conversion rate decreased with the coarse surface electrode because more uniform discharge can be obtained on the smooth surface electrode. The NO conversion rate increased with decreasing the initial concentration, so the DBD process is more feasible in the lower concentration condition. The variation of gas residence time tested at the same energy density in the experiment did not affect on the NO conversion. The result shows that the NO conversion rate mainly depends on the energy density. The DBD process is able to adjust on plasma-photocatalyst process because it emits the short wavelength light in the range of ultraviolet. The intensity of light emission increased with the increase of the energy transfer to the reactor and the gas flow rate.

• Journal of the Korean Electrochemical Society
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• v.1 no.1
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• pp.24-27
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• 1998

Electroluminescence (EL) comes from the light emission obtained by the electrical excitation energy passing through a phosphor layer undo. an applied high electrical field $(10^6 V/cm)$. The preparation of white and blue phosphors and characterizations of light emitting alternating current powder electroluminescent devices (ACPELDs) were investigated. In this work, we fabricated two kinds of ELDs, that is, yellow electroluminescent device (B-ELD), blue electroluminescent device (B-ELD). The basic st.uctures of Y-ELD and B-ELD are ITO (Indium Tin Oxide)/phosphor layer/Insulator layer/Carbon electrode and ITO/Phosphor layer/Insulating layer/carbon electrode, respectively. Another structures of ITO/Phosphor and Insulator mixture layer/Backelectrode are introduced. EL spectra and luminance of two types of ELDs were measured by changing voltage at fixed frequency 0.4kHz, 1.5kHz. Blue and yellow phosphors prepared in this work show $50cd/m^2\;and\;30cd/m^2$ of luminance at 400Hz, 150V.

• Journal of the Korean Society for Nondestructive Testing
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• v.16 no.3
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• pp.155-161
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• 1996

For the condition monitoring of the journal bearing in rotating machinery, a system for their diagnosis by acoustic emission(AE) was developed. AE has been used to detect abnormal conditions in the bearing system. It was found from the field application study as well as the laboratory experiment using a simulated journal bearing system that AE RMS voltage was the most efficient parameter for the purpose of current study. Based on the above results, algorithms and judgement criteria for the diagnosis system was established. The system is composed of four parts as follows: the sensing part including AE sensor and preamplifier, the signal processing part for RMS-to-DC conversion to measure AE ms voltage, the interface part for transferring RMS voltage data into PC using A/D converter, and the software part including the graphic display of bearing conditions and the diagnosis program.

• Carbon letters
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• v.15 no.3
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• pp.192-197
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• 2014

A hierarchical pore structured novolac-type phenol based-activated carbon with micropores and mesopores was fabricated. Physical activation using a sacrificial silicon dioxide ($SiO_2$) template and chemical activation using potassium hydroxide (KOH) were employed to prepare these materials. The morphology of the well-developed pore structure was characterized using field-emission scanning electron microscopy. The novolac-type phenol-based activated carbon retained hierarchical pores (micropores and mesopores); it exhibited high Brunauer-Emmett-Teller specific surface areas and hierarchical pore size distributions. The hierarchical pore novolac-type phenol-based activated carbon was used as an electrode in electric double-layer capacitors, and the specific capacitance and the retained capacitance ratio were measured. The specific capacitances and the retained capacitance ratio were enhanced, depending on the $SiO_2$ concentration in the material. This result is attributed to the hierarchical pore structure of the novolac-type phenol-based activated carbon.

• Applied Chemistry for Engineering
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• v.20 no.6
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• pp.617-621
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• 2009

Zinc oxide (ZnO) nanorods were grown on the pre-oxidized silicon substrate with the assistance of Au and the fluorine-doped tin oxide (FTO) based on the catalysts by vapor-liquid-solid (VLS) synthesis. Two types of ZnO powder particle size, 20nm, $20{\mu}m$, were used as a source material, respectively The properties of the nanorods such as morphological characteristics, chemical composition and crystalline properties were examined by X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and field-emission scanning electron microscope (FE-SEM). The particle size of ZnO source strongly affected the growth of ZnO nanostructures as well as the crystallographic structure. All the ZnO nanostructures are hexagonal and single crystal in nature. It is found that $1030^{\circ}C$ is a suitable optimum growth temperature and 20 nm is a optimum ZnO powder particle size. Nanorods were fabricated on the FTO deposition with large electronegativity and we found that the electric potential of nanorods rises as the ratio of current rises, there is direct relationship with the catalysts, Therefore, it was considered that Sn can be the alternative material of Au in the formation of ZnO nanostructures.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1921-1923
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• 2004

V-p characteristics and the discharge luminous characteristics in inhomogeneous $SF_6$ gas gap under the positive and negative lightning impulse voltages are presented. The test gap was composed of the plane-to-plane with a needle-shaped protrusion. The applied voltage and the predischarge current were measured by the electric field sensor and the shunt of 50 ${\Omega}$, respectively. The light emission signals were observed by a photomultiplier tube, and a high-speed camera. In a consequence, the dielectric strengths of $SF_6$ gas gap under positive lightning impulse voltages were independent of the gas pressure. In the presence of the positive polarity, the branches of discharge channel were created and the directions of the discharge paths were random. On the other hands, the discharge paths of the negative polarity were more thicker and brighter.

• Transactions on Electrical and Electronic Materials
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• v.17 no.3
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• pp.139-142
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• 2016

β-AgVO₃ nanorods have been successfully synthesized using a soft chemistry route followed by heat treatment. They were characterized by X-ray diffraction and field emission scanning electron microscopy, and their electrochemical properties were investigated using cyclic voltammetry, impedance spectra, and charge-discharge tests. The results showed that the smooth-surfaced nanorods are very uniform and well dispersed, with diameters of ~100-200 nm and lengths of the order of several macrometers. The nanorods deliver a maximum specific discharge capacity of 275 mAh g^-1 at 30 mA g^-1. They also demonstrated good rate capability with a discharge capacity at the 100^th cycle of 51 mAh g^-1.