• 반도체디스플레이기술학회지
• /
• 제16권1호
• /
• pp.40-44
• /
• 2017

The effect of weak dielectric silicone dioxide($SiO_2$) embedded in polyfluorene(PFO) emitting layer of polymer-based multi structure OLED was investigated. Indium tin oxide(ITO)/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)/poly(9,9-di-n-octylfluorenyl-2,7-diyl)(PFO)/2,2,2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi)/aluminum(Al) structure OLED was fabricated by spin-coating method. Applied electric field causes some effect on $SiO_2$ in PFO layer. Thus, interaction between polymers and affected $SiO_2$ might generate electrical and luminance properties change. Experimental results, show the reduced threshold voltage of 6 V(from 23 V to 17 V). The maximum current density was rather increased from $71A/m^2$ to $610A/m^2$ and maximum brightness was also increased from $7.19cd/m^2$ to $41.03cd/m^2$, 9 and 6 times each. Additionally we obtained colour broadening result due to the increasing of blue-green band emission. Consequently we observed that electrical and luminance properties are enhanced by adding $SiO_2$ and identified the possibility of controlling the emission colour of OLED device according to colour broadening.

• 전자공학회논문지A
• /
• 제31A권6호
• /
• pp.117-127
• /
• 1994

In this paper, electrical and reliability properties of N$_2$O oxides, grown at the temperature of 95$0^{\circ}C$ and 100$0^{\circ}C$ to 74$\AA$, and 82$\AA$. respectively, using NS12TO gas in a conventional furnace, have been compared with those of pure oxide grown at the temperature of 850 to 84$\AA$ using O$_2$ gas. Initial IS1gT-VS1gT characteristics of N$_2$O oxides were similar to those of pure oxide, and reliability properties of N$_2$O oxides, such as charge trapping, interface state density and leakage current at low electric field under F-N stress, were improved much better than those of pure oxide. But, with increasing capacitor area. TDDB characteristics of N$_2$O oxides were more degraded than those of pure oxide and this degradation of TDDB characteristics was more severe in 100$0^{\circ}C$ N$_2$Ooxide than in 95$0^{\circ}C$ N$_2$O oxide. The improvement of reliability properties excluding TDDB in N$_2$Ooxides was attributed to the hardness of the interface improved by nitrogen pile-up at the interface of Si/SiO$_2$, but on the other hand, the degradation of TDDB characteristics in N$_2$O oxides was obsered due to the increase of local thinning spots caused by excessive nitrogen at interface during the growth of N$_2$O oxides.

• 한국전자파학회논문지
• /
• 제9권4호
• /
• pp.450-461
• /
• 1998

축소 실험 모형올 이용하여 다중경로 페이딩의 공간분포 특성올 분석한다. 특히 페이딩의 주기 특성 분석을 위 해서 공간 푸리에변환을 통해 페이딩의 공간 주파수 성분을 찾아내는 방법올 이용한다.축소 실험 모형은 실제 환경에 비해 1/5배로 축소되었다. 따라서 실제의 전파모텔 분석에서 사용하는 주파수는 2 GHz이지만, 축소 설험 모형을 이용한 측정에서는 10 GHz를 사용한다. 그리고 페이딩의 정밀한 측정올 위 해서 안테나 자동이송 시스템을 제작하여 실험에 이용하였다. 축소 실험 모형에서의 측정 결과와 이에 대응하는 실제 전파환경에 대한 시융레이션 결과는 전계분포 곡선과 공간 주파수 밀도분포 곡선으로 나타내어 비교하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
• /
• pp.469-472
• /
• 1999

CeO$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$-Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8 $\AA$. MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200 $^{\circ}C$, and interface state densities as low as 1.84$\times$10$^{11}$ cm $^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications.

• 대한전자공학회논문지
• /
• 제21권2호
• /
• pp.71-82
• /
• 1984

2차원 n-p-n 바이폴라 트랜지스터의 수치해석을 위한 프로그램(BIPOLE)을 개발하였다. 이 프로그램은 SRH와 Auger 재결합 기구들과 불순물 농도와 전계강도에 대한 운송자 이동도의 의존성과 밴드 갭 축소 효과들을 포함하고 있다. Poisson 방정식에는 Newton법을 또 정공과 전자의 연속 방정식에는 발산이론을 이용하여 여러가지 물리적인 제한없이 기본 반도체 방정식들에 대한 유한차분 공식들을 만들었다. 선형화된 방정식들의 계수 행렬은 희소 대칭 M 행렬이었는데 그 해를 구하기 위해 ICCG법과 Gummel의 알고리즘을 적용하였다. 이 프로그램 BIPOLE를 n-p-n 트랜지스터의 여러가지 정상 상태 문제에 적용시켰다. 그 응용의 보기로서 공통 에미터 전류이득의 변화, 에미터 용량에 대한 확산용량이 미치는 영향과 입출력 특성곡선들을 계산해 보았다. 전위 분포와 전자와 정공 농도분포와 같은 계산 결과를 3차원 컴퓨터 그래픽으로 도시하였다. 이 프로그램은 장차 2차원 트랜지스터의 교류 및 왜곡 현상의 수치해석의 기초로 이용될 것이며, 이 프로그램에 관심있는 모든 분들께 공급될 것이다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 추계학술대회 논문집
• /
• pp.591-593
• /
• 2000

In this paper, we describe the results of a combined experimental theoretical study designed to understand and predict the dielectric properties of SF$_{6}$ and SF$_{6}$+Ar mixtures. The electron transport, ionization, and attachment coefficients for pure SF$_{6}$ and gas mixtures containing SF$_{6}$ has been analysed over the E/N range 30~300[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] SF$_{6}$+Ar mixtures were measured by time- of- flight method, The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with the experimental and theoretical for a rang of E/N values. Electron energy distribution functions computed from numerical solutions of the electron transport and reaction coefficients as functions of E/N. We have calculated $\alpha$,η and $\alpha$-η the ionization, attachment coefficients, effective ionization coefficients, and (E/N), the limiting breakdown electric-field to gas density ratio, in SF$_{6}$ and SF$_{6}$+Ar mixtures by numerically solving the Boltzmann equation for the electron energy distribution. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of theections of the

• 한국의류학회지
• /
• 제35권11호
• /
• pp.1297-1308
• /
• 2011

This research investigates the application of ZnO (zinc oxide) nanoparticles and $TiO_2$ (titanium dioxide) nanoparticles to polypropylene nonwoven fabrics via an electrospinning technique for the development of textile materials that can decompose harmful gases. To fabricate uniform ZnO nanocomposite fibers, two types of ZnO nanoparticles were applied. Colloidal $TiO_2$ nanoparticles were chosen to fabricate $TiO_2$ nano- composite fibers. ZnO/poly(vinyl alcohol) (PVA) and $TiO_2$/PVA nanocomposite fibers were electrospun under a variety of conditions that include various feed rates, electric voltages, and capillary diameters. The morphology of electrospun nanocomposite fibers was examined with a field-emission scanning electron micro- scope and a transmission electron microscope. Decomposition efficiency of gaseous materials (formaldehyde, ammonia, toluene, benzene, nitrogen dioxide, sulfur dioxide) by nanocomposite fiber webs with 3wt% nano-particles (ZnO or $TiO_2$) and 7$g/m^2$ web area density was assessed. This study shows that ZnO nanoparticles in colloid were more suitable for fabricating nanocomposite fibers in which nanoparticles are evenly dispersed than in powder. A heat treatment was applied to water-soluble PVA nanofiber webs in order to stabilize the electrospun nanocomposite fibrous structure against dissolution in water. ZnO/PVA and $TiO_2$/PVA nanofiber webs exhibited a range of degradation efficiency for different types of gases. For nitrogen dioxide, the degradation efficiency was 92.2% for ZnO nanocomposite fiber web and 87% for $TiO_2$ nanocomposite fiber web after 20 hours of UV light irradiation. The results indicate that ZnO/PVA and $TiO_2$/PVA nano- composite fiber webs have possible uses in functional textiles that can decompose harmful gases.

• 한국산학기술학회논문지
• /
• 제15권5호
• /
• pp.2587-2593
• /
• 2014

세라믹 사출공정(CIM)은 산업 분야 전반에 걸쳐 널리 사용되고 있는 공정 중 하나로, 점차 의료용 전자기기의 부품 등으로 확대 적용되고 있다. 본 연구에서는 FEM 해석을 통해 CIM의 공정변수가 제품의 품질에 미치는 영향을 분석했다. 단순평판 형상의 해석결과를 기초로 구멍이 있는 형상, 모서리부가 둥근 형상 및 측벽 구조가 있는 형상 등과 비교 분석했다. 구멍이 있는 형상의 경우, 구멍 주변에 밀도분포가 고르지 못하며 용접선(weld-line)과 같은 결함이 발생할 수 있음을 예측할 수 있었다. 반면 제품의 모서리부 반경이 크면 성형성 및 유동성이 좋아지는 것을 확인했다. 따라서 CIM 공정변수 뿐만 아니라 제품의 형상변수도 고려해야 한다. 해석결과 온도, 초기분율, 속도 등의 공정변수는 제품의 품질 향상을 위한 중요한 설계 변수가 될 수 있음을 확인할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.817-820
• /
• 2004

The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using a RF magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing time were studied. In the SEM images, Bi-layered perovskite phase was crystallized at 10min and grains largely grew with annealing tune. SBT thin films are transformed from initial amorphous phase to the fully formed layer-structured perovskite. During the annealing process at $750^{\circ}C$, we found that an fluorite-like stage is formed after 3min. In the XRD pattern, the SBT thin films after 3min annealing time had (105) orientation. The ferroelectric properties of SBT capacitor with annealing time represent a favorable properties at 60 min. The maximum remanent polarization and the coercive electric field with 60 min are $12.40C/cm^2$ and 30kV/cm, respectively. The leakage current density with 60min is $6.81{\times}10^{-10}A/cm^2$.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2012년도 임시총회 및 하계학술연구발표회
• /
• pp.121-122
• /
• 2012

Iron-excess gallium ferrite, $Ga_{0.6}Fe_{1.4}O_3$ (GFO), is known to have room-temperature ferromagnetic phases and potentially exhibit ferroelectricity as well [1]. But, leaky polarization-electric field (PE) hysteresis curves of the GFO thin film are hurdle to prove its spontaneous polarization, in other words, ferroelecticity. One of the reasons that the GFO films have leaky PE hysteresis loop is carrier hopping between $Fe^{2+}$ and $Fe^{3+}$ sites due to oxygen deficiency. We focus on reducing conducting current by substituting divalent cations at $Fe^{2+}$ sites. GFO thin films were grown epitaxially along b-axis normal to $SrRuO_3/SrTiO_3$ (111) substrates by pulsed laser deposition. Current density of the ion-substituted GFO thin films was reduced by $10^3$ or more. Ferroelectric properties of the ion-substituted GFO thin films were measured using macroscopic and microscopic schemes. In particular, local ferroelectric properties of the GFO thin films were exhibited and their remnant polarization and piezoelectric d33 coefficient were obtained.