• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.11A
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• pp.883-890
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• 2003

In this paper, Electromagnetic scattering problems by a resistive strip grating with tapered resistivity on a grounded dielectric plane according as strip width and spacing, relative permittivity and thickness of dielectric layers, and incident angles of a electric wave are analyzed by applying the FGMM(Fourier-Galerkin Moment Method) Known as a numerical procedure. The scattered electromagnetic fields are expanded in a series of floguet mode functions. The boundary conditions are applied to obtain the unknown field coefficients and the resistive boundary condition is used for the relationship between the tangential electric field and the electric current density on the strip. The tapered resistivity of resistive strips varies zero resistivity at strip edges. Then the induced surface current density on the resistive strip is expanded in a series of Chebyshev polynomials of the second kind. The numerical results of the geometrically in this paper are compared with those for the existing uniform resistivity and perfectly conducting strip. The numerical results of the normalized reflected power for conductive strips case with zero resistivity in this paper show in good agreement with those of existing paper.

• Journal of Advanced Navigation Technology
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• v.10 no.2
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• pp.152-158
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• 2006

In this paper, electromagnetic scattering problems by a resistive strip grating with zero resistivity at the strip-edges on a grounded 2 dielectric layers according as strip width and spacing, relative permittivity, thickness of dielectric layers, and incident angles of a electric wave are analyzed by applying the FGMM(Fourier-Galerkin Moment Method) known as a numerical procedure. The scattered electromagnetic fields are expanded in a series of floguet mode functions. The boundary conditions are applied to obtain the unknown field coefficients and the resistive boundary condition is used for the relationship between the tangential electric field and the electric current density on the strip. The tapered resistivity of resistive strips varies zero resistivity at strip edges. Then the induced surface current density on the resistive strip is expanded in a series of Chebyshev polynomials of the second kind. The normalized reflected power with zero resistivity in this paper show in good agreement with those of existing paper.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.761-768
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• 1995

Double layered BaTiO3 thin films with high dielectric constant as well as good insulating property were prepared for the application to low voltage driving thin film electroluminescent (TFEL) device. BaTiO3 thin films were formed by rf-magnetron sputtering technique. Amorphous and polycrystalline BaTiO3 thin films were deposited at the substrate temperatures of room temperature and 55$0^{\circ}C$, respectively. Two kinds of films prepared under these conditions showed high resistivity and high dielectric constant. The figure of merit (=$\varepsilon$r$\times$Eb.d) of polycrystalline BaTiO3 thin film was very high (8.43$\mu$C/$\textrm{cm}^2$). The polycrystalline BaTiO3 showed a substantial amount of leakage current (I), under the high electric field above 0.5 MV/cm. The double layered BaTiO3 thin film, i.e., amorphous BaTiO3 layer coated polycrystalline BaTiO3 thin film, was prepared by the new stacking method and showed very good dielectric and insulating properties. It showed a high dielectric constant fo 95 and leakage current density of 25 nA/$\textrm{cm}^2$ (0.3MV/cm) with the figure of merit of 20$\mu$C/$\textrm{cm}^2$. The leakage current density in the double layered BaTiO3 was much smaller than that in polycrystalline BaTiO3 under the high electric field. The saturated brightness of the devices using double layered BaTiO3 was about 220cd/$m^2$. Threshold voltage of TFEL devices fabricated on double layered BaTiO3 decreased by 50V compared to the EL devices fabricated on amorphous BaTiO3.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.9
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• pp.1717-1723
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• 2007

In this study , quasi-MFISFET (Metal-Ferroelectric-Insulator-Semiconductor FET) devices are fabricated using PLZT(10/30/70), PLT(10), PZT(30/70) thin film and their drain current properties are investigated. It is found that the drain current of quasi-MFISFET is directly influenced by the polarization strength of ferroelectric thin fan. Also, when the gate voltages are ${\pm}5\;and\;{\pm}10V$, the memory windows are 0.5 and 1.3V, respectively. It means that the memory window is changed with the variation of coercive voltage generated by the voltage applied on ferroelectric thin film. The electric field and the leakage current with time delay of PLZT(10/30/70) thin lam are measured to investigate the retention property of MFISFET device. Some material parameters such as current density constant, $J_{ETO}$, electric field dependent factor K and time dependent factor m are obtained. The variation of charge density with time is quantitatively analyzed by using the material parameters.

• KSTLE International Journal
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• v.6 no.1
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• pp.28-32
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• 2005

The electrorheoloRical (ER) fluids are composed of a colloidal dispersion of polarizable particles in insulating oil, and it's the rheological property changes by the applied electric field. These changed are reversible and occur fast within a fewmilliseconds. The ER properties of the ER fluid such as increment of viscosity and yield stress come from the particle chain structure induced by electric fleld. When formulating the ER fluid for a speciflc application, some requirement must besatisfled, which are high yield stress under electric field, rapid response, and dispersion stability. While this characteristic makes valuable ER fluids in valious industrial applications, their lung term and quiescent application has been limited because ofproblems with particle sedimentation. In an effort to overcome sedimentation problem of ER fluids, the anhydrous ER materials of monodispersed hollow polyaniline (PANI) and adipate derivative respectively with submicron-sized suspension providing wide operating temperature range and other advantage were synthesized in a four-step procedure. The ER fluidswere characterized by FT-lR, TGA, DLS, SEM, and TEM. Stability of the suspensions was examined by an UV spectroscopy.The rheological and electrical properties of the suspension were investigated Couette-type rheometer with a high voltagegenerator, current density, and conductivity. And the behavior of ER suspensions was observed by a video camera attached toan optical microscope under 3kV/mm. The suspensions showed good ER properties, durability, and particle dispersion.

• Journal of Korea Society of Industrial Information Systems
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• v.4 no.1
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• pp.102-109
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• 1999

In this paper, Electromagnetic scattering problem by a perfectly conducting strip grating with 2 dielectric layer on a grounded plane by incidence of a electric wave is analyzed by applying the PMM (Point Matching Method) known as a simple procedure. The scattered electromagnetic fields are expanded in a series of Floquet mode functions. The boundary conditions are applied to obtain the unknown field coefficients and the conducting boundary condition is used for the relationship between the tangential electric field and the electric current density on the strip When the incident angle is normal incidence the minimum value of the geometrically normalized reflected power according as relative permittivity is increased it should be noted that the value of the strip width gets moved toward high value. Them most energy by a normal incident wave is scattered in direction of the other angles except normal incident angle.

• Proceedings of the KIEE Conference
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• 2002.11d
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• pp.61-63
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• 2002

At recently, it is regarded efficiency of the electric motor. and the development of the electric motor of new concept and research according to the development of new material and a elevation of magnetic property of magnetism material have been processed actively. One of the that, the transverse flux linear electric motor is studing actively about application method in many ways. because it has high power density and efficiency more than a induction motor. In this study we introduce apply field of the electromotor which follows Picture and find out the characteristic using the 3D Finite Element Method(FEM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.516-517
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• 2005

We made use of $Alq_3$ which is the representative light-emitting material. Electric conduction mechanism were analyzed in this paper. We have also measured current density-thickness-voltage characteristics with thickness variation from 60 to 400 nm. We analyzed the low electric and the high electric field in theoretically.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.6
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• pp.1146-1151
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• 2011

There are two methods for train control in information transmission by using track circuit system and installing wayside transmitter. Information signal is transmitted to the on-board antenna by using rails. Continuous information about train intervals, speed and route is received by on-board antenna in AF track circuit system. The information signal is included with carrier wave and received by magnetic coupling in the on-board antenna. Therefore, it is important to define standard current level in the AF track circuit system. When current flowed to rails is low, magnetic sensors are not operated by decreasing magnetic field intensity. Hence, SNR is decreased because electric field intensity is decreased. When the SNR is decreased, there is the serious influence of noise upon demodulation. So, the frequency of information signal is not extracted in frequency response. Thus, it is possible to happen to train accident and delay as the information signal is not analyzed in the on-board antenna. In this paper, standard energy density is calculated by using Parseval's theory in UM71c track circuit. Hence, detection time of information signal is presented.