• 제목/요약/키워드: Electric device

검색결과 1,821건 처리시간 0.035초

The Poly(3-hexylthiophene)을 발광층으로 사용한 전계 발광소자의 발광특성 (Emission Properties of Electroluminescent Device Using Poly(3-hexylthiophene) as Emilting Material)

  • 김주승;구할본;조재철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.263-266
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    • 1999
  • Electrolunlinescent devices based on conjugated polymer emitting materials have been much attracted possible applications for multicolor flat panel display, since the conjugated polymers have a small band gap emitting obtained at a low driving voltage. In this paper, we fabricated the single layer EL device using poly(3-hexylthiophene) as emitting material Electroluminescence(EL) and I-V-L characteristics of indium-tin-oxide[ITO]P3HT/AI device with a various thickness were investigated. It was demonstrate that the I-V characteristics depend, not the voltage but the electric- field strength, The current is dependent on the electric filed and not on the applied voltage, indicating that the carriers are injected by a tunneling process. In the device, the barrier to hole injection is only 0.5eV and the barrier to electron injection is 1.5eV.

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전기차 응용을 위한 수직형 GaN 전력반도체 기술 동향 (Technical Trends in Vertical GaN Power Devices for Electric Vehicle Application)

  • 이형석;배성범
    • 전자통신동향분석
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    • 제38권1호
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    • pp.36-45
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    • 2023
  • The increasing demand for ultra-high efficiency of compact power conversion systems for electric vehicle applications has brought GaN power semiconductors to the fore due to their low conduction losses and fast switching speed. In particular, the development of materials and core device processes contributed to remarkable results regarding the publication of vertical GaN power devices with high breakdown voltage. This paper reviews recent advances on GaN material technology and vertical GaN power device technology. The GaN material technology covers the latest technological trends and GaN epitaxial growth technology, while the vertical GaN power device technology examines diodes, Trench FETs, JFETs, and FinFETs and reviews the vertical GaN PiN diode technology developed by ETRI.

절연구간 자동전원 절체시스템을 운행하는 전기차량 영향성 연구 (The study on effect of electric train passing automatic changover system in neutral section of electric railway)

  • 홍현표;양상웅;차한주;김철환;이희순
    • 한국철도학회:학술대회논문집
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    • 한국철도학회 2011년도 정기총회 및 추계학술대회 논문집
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    • pp.195-203
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    • 2011
  • This paper is to analysis technical characteristics occured in the eletric train power conversion device passing automatic changover system in neutral section of electric railway. Power conversion devices in electric train are classified according to the current type and voltage type. The results of this study is used to ensure the stability of electric train in neutral section of electric railway.

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고속 Bipolar 소자를 이용한 comparator 설계 (Comparator design using high speed Bipolar device)

  • 박진우;조정호;구용서;안철
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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    • pp.351-354
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    • 2004
  • This thesis presents Bipolar transistor with SAVEN(Self-Aligned VErtical Nitride) structure as a high-speed device which is essential for high-speed system such as optical storage system or mobile communication system, and proposes 0.8${\mu}m$ BiCMOS Process which integrates LDD nMOS, LDD pMOS and SAVEN bipolar transistor into one-chip. The SPICE parameters of LDD nMOS, LDD pMOS and SAVEN Bipolar transistor are extracted, and comparator operating at 500MHz sampling frequency is designed with them. The small Parasitic capacitances of SAVEN bipolar transistor have a direct effect on decreasing recovery time and regeneration time, which is helpful to improve the speed of the comparator. Therefore the SAVEN bipolar transistor with high cutoff frequency is expected to be used in high-speed system.

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TTCN-3를 이용한 전력 IT Protocol Conformance Test 기법 (Conformance Test Technique for the Electric Power IT Protocol based on TTCN-3)

  • 송병권;장용기;정태의;김건웅;김진철;김영억
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 추계학술대회 논문집 전력기술부문
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    • pp.373-375
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    • 2008
  • TTCN-3(Testing & Test Control Notation Version 3) defined in EISI(2001) are the standardized test specification and test implementation language of applicable for all kinds of black-box testing for reactive and distributed system, telecom systems, Mobile system, Internet, CORBA based system, java, XML, etc. This paper using the TTCN-3 on an Electric Power IT Protocol DLMS(Device Language Message Specification) standards for the implementation of the device equipment test the suitability of the protocol.

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전압플리커 저감과 역률 보상 기능을 갖는 배전용 STATCOM의 실계통연계 운전결과 분석 (Analysis of the Distribution STATCOM for Improving the power factor and Mitigation of Voltage Flicker in Real System)

  • 오관일;전영수;박상태;추진부
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 하계학술대회 논문집 A
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    • pp.245-248
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    • 2000
  • This paper presents the test and operation results of the domestic demonstration of the reactive power compensation device called STATCOM (STATic COMpensator). The object of the paper is to describe the reliability of the unit based on the extensive operation databases. By controlling reactive power, the technology offers utilities the opportunity for increased efficiency and their capabilities will permit transmission planners make the best use of their existing transmission resources STATCOM is a custom power device in a way and can be used in a similar way for the dynamic compensation of power transmission systems, mitigation of voltage flicker and improving the power factor. It is shown that the STATCOM has clear advantages in areas such as: mitigation of voltage flicker and improving power factor.

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Performance Analysis and Experiment of Network Architecture for Distributed Control System

  • Lee, Sung-Woo;Gwak, Kwi ?Yil;Song, Seong-Il;Park, Doo-Yong
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2005년도 ICCAS
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    • pp.334-337
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    • 2005
  • This paper describes the implementation of DCS communication network that provides high bandwidth and reliability. The network for DCS in this paper adopts the Reflective Memory (RM) architecture and Fast Ethernet physical media that have 100Mbps bandwidth. Also, this network uses Ring Enhancement Device (RED) which was invented to reduce the time delay of each node. The DCS network that is introduced in this paper is named as ERCNet(Ethernet based Real-time Control Network). This paper describes the architecture and working algorithms of ERCNet and performs numerical analysis. In addition, the performance of ERCNet is evaluated by experiment using the developed ERCNet network.

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틸팅열차(TTX)의 정장품 성능평가 연구 (A Study on Performance Evaluation of On-board Electric Device of TTX(Tilting Train Express))

  • 한성호;이수길;서승일
    • 한국복합재료학회:학술대회논문집
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    • 한국복합재료학회 2005년도 추계학술발표대회 논문집
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    • pp.239-242
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    • 2005
  • This paper introduced an approach of improvement of performance of Electric device for EMU type Train like as TTX. The electric equipments are characterized by insulation, Noise, cooling system etc. and Their weight arc decided by these factors. There are two kinds of power source in EMU train. First, DC voltage source, 1500 volt, 750 volt is used for subway system. Second, AC power source 25000 volt is applied to high speed train and existing main lines. Composite material has the protection of inrush current and high frequency noise. We can use this material to minimize weight of train. Additionally we can get energy saving when operator service TTX.

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절연구간 무접점 자동 전원절체 통과시스템 기술개발 (Technology development on automatic changeover system in neutral section with energized condition of electric railway catenary system)

  • 홍현표;한문섭;서명석;신명철;윤용한;김재철
    • 한국철도학회:학술대회논문집
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    • 한국철도학회 2010년도 춘계학술대회 논문집
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    • pp.498-506
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    • 2010
  • The neutral section was installed in order to prevent conflict with different phase angle source in electric railway catenary system. The speed of electric train reduced due to coasting operation by notch off when it passed the neutral section. And, the catenary wire was damaged and the accident might be happened because of the arc generation when the electric train passed the neutral section with notch on condition. This project has a goal to develop the automatic changeover system using by noncontactless semiconductor device in neutral section of catenary system so that the train pass as notch-on condition. In this first year, we obtain as following results such as domestic and international systems applications and completion requirements, development and analysis of stability for automatic changeover system, design of static switching device on automatic changeover system in neutral section and drawing up interface design and specifications according to equipment.

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전계를 이용한 기억장치 전극의 최적 설계 (Optimal Design of Electrical Probe of Record Device using Electric Field)

  • 이성구;최재학;김용수;이주;최승길
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2004년도 하계학술대회 논문집 B
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    • pp.899-901
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    • 2004
  • This paper analyzes recording density according to the shape variation of Electric Probe writer, and present a shape design method for improving recording density in perpendicular electric recording device. The gradient of electric field has to be steep to improve recording density because transition region on the media becomes wider when recording. The optimum shape of electrode could be archived by using Response Surface Methodology and 2-Dimensional Finite Element Method.

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