• The Korean Journal of Ceramics
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• 제6권2호
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• pp.138-142
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• 2000

Thin film $LiNbO_3$MFS (metal-ferroelectric-semiconductor) capacitor showed improved characteristics such as low interface trap density, low interaction with Si substrate, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$thin films grown directly on p-type Si (100) substrates by 13.56 MHz RF magnetron sputtering system for FRAM (ferroelectric random access memory) applications. RTA (rapid thermal anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60sec. We learned from X-ray diffraction that the RTA treated films were changed from amorphous to poly-crystalline $LiNbO_3$which exhibited (012), (015), (022), and (023) plane. Low temperature film growth and post RTA treatments improved the leakage current of $LiNbO_3$films while keeping other properties almost as same as high substrate temperature grown samples. The leakage current density of $LiNbO_3$films decreased from $10^{-5}$ to $10^{-7}$A/$\textrm{cm}^2$ after RTA treatment. Breakdown electric field of the films exhibited higher than 500 kV/cm. C-V curves showed the clockwise hysteresis which represents ferroelectric switching characteristics. Calculated dielectric constant of thin film $LiNbO_3$illustrated as high as 27.9. From ferroelectric measurement, the remanent polarization and coercive field were achieved as 1.37 $\muC/\textrm{cm}^2$ and 170 kV/cm, respectively.

• 한국안전학회지
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• 제28권2호
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• pp.26-30
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• 2013

The purpose of this study is to find risk factors by analyzing the operation principle of a photo coupler (P/C) used to remove the noise of electronic devices and establish a base for the performance improvement of developed products. It was found from the P/C circuit analysis of normal products that they were equipped with an electrolytic condenser of $0.1{\mu}F$ to smooth system signals. Due to the epoxy resin packing the external part of the P/C, this study experienced a limit to visually examine the damage to it. It could be seen from the analysis of electric characteristics of the P/C that the forward voltage ($V_f$) and reverse current ($I_r$) were 1.3 V and 10 uA, respectively. In addition, it is required that the breakdown voltage (VCE) between the collector (C) and emitter (E) be maintained at less than 35 V. The and of the damaged product #1 were comparatively good. However, the measurement of was 100.0 uA. From this, it is thought that a short circuit occurred to the internal circuit. Moreover, from the fact that the of the damaged product #2 was open circuit and the measurement of was 0.0 uA, it is thought that the collector and emitter was separated or insulation resistance was significantly high. Furthermore, from the fact that the of the damaged product #3 was open circuit and the measurement of was 0.0 uA, it is thought that the space between the collector (C) and emitter (E) failed to meet the design standard or that they were separated. Therefore, it is thought that fabricating the P/C by increasing the reverse current 10 mA to 50 mA will prevent its malfunction.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.32-35
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• 2000

Oxide-nitride-oxide(ONO) structures were formed by sequential radio frequency reactive magnetron sputtering method. The chemical composition and structure of these films were studied by using of secondary ion mass spectroscopy(SIMS) and Auger electron spectroscopy(AES) SIMS and AES experiments show the existence of nitridation at the SiO$_2$/Si substrate. The electrical characteristics of ONO films were evaluated by I-V and high frequency C-V measurements When the ONO films were annealed at 90$0^{\circ}C$ for 30 sec in $N_2$ ambient, the breakdown voltage increased and flat-band voltage decreased under high electric field.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.223-229
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• 2017

This paper analyzes the effect of a dual-metal-gate structure on the electrical characteristics of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors. These structures have two gate metals of different work function values (${\Phi}$), with the metal of higher ${\Phi}$ in the source-side gate, and the metal of lower ${\Phi}$ in the drain-side gate. As a result of the different ${\Phi}$ values of the gate metals in this structure, both the electric field and electron velocity in the channel become better distributed. For this reason, the transconductance, current collapse phenomenon, breakdown voltage, and radio frequency characteristics are improved. In this work, the devices were designed and analyzed using a 2D technology computer-aided design simulation tool.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.62-62
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• 2015

In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4 gas is decomposed into fluorine ions by ICP-RIE and then fluorine ions will effect the AlGaN/GaN interface to inhibit the electron transport of two dimension electron gas (2DEG) and increase channel resistance. The CF4 plasma method neither like the recessed type which have to utilize Cl2/BCl3 to etch semiconductor layer nor ion implantation needed high power to implant ions into semiconductor. Both of techniques will cause semiconductor damage. In the experiment, the CF4 treatment time are 0, 50, 100, 150, 200 and 250 seconds. It was found that the devices treated 100 seconds showed best electric performance. In order to prove fluorine ions existing and CF4 plasma treatment not etch epitaxial layer, the secondary ion mass spectrometer confirmed fluorine ions truly existing in the sample which treatment time 100 seconds. Moreover, transmission electron microscopy showed that the sample treated time 100 seconds did not have etch phenomena. Atomic layer deposition is used to grow Al2O3 with thickness 10, 20, 30 and 40 nm. In electrical measurement, the device that deposited 20-nm-thickness Al2O3 showed excellent current ability, the forward saturation current of 210 mA/mm, transconductance (gm) of 44.1 mS/mm and threshold voltage of 2.28 V, ION/IOFF reach to 108. As IV concerning the breakdown voltage measurement, all kinds of samples can reach to 1450 V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.

• 비파괴검사학회지
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• 제14권1호
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• pp.16-22
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• 1994

일반적으로 구름 베어링 시스템에 비해 발전용 터어빈이나 내연기관 엔진과 같은 저어널 베어링을 가진 시스템은 상대적으로 대형 설비이거나 더 가혹한 운전조건에서 가동되는 경우가 많다. 이런 회전기계류에서의 베어링의 파손은 설비의 운전 중단 및 관련 설비의 파손까지도 초래할 수 있게 된다. 따라서 이로 인한 보수에 소비되는 시간 및 경제적인 손실등을 피하기 위해서는 저어널 베어링의 조기파손 감지의,역할은 매우 중요하게 된다. 본 연구에서는 음향방출 기술을 이용하여 베어링에서 발생할 수 있는 파손의 조기검출을 위해 실험실용으로 직접 제작한 저어널 베어링 시스템을 이용하여 여러 형태의 비정상 조건을 만들어 가며 실험을 행하였다. 베어링 손상 및 피로의 주 요인으로서는 윤활유 부족, 윤활층에의 이물질의 혼입, 조립 불량 등이 대표적인 원인으로서 알려져 있으며 이에 근거하여 실험 조건을 윤활유에의 이물질 혼입, 윤활유 부족, 그리고 축과 베어링간의 금속간 접촉등의 인위적인 형태로 구성하여 실험하였다. 그 결과로서 음향방출 기술이 저어널 베어링의 조기파손 감지에 매우 효과적인 도구라는 것을 입증하였다.

• 한국재료학회지
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• 제2권1호
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• pp.43-51
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• 1992

초음파분무를 이웅한 MOCVD법으로 $Pb(Zr,\;Ti)O_3$박막을 제조하였다. $300-450^{\circ}C$의 낮은 중착온도에서 페롭스카이트 구조를 가지는 결정화된 박막을 만들 수 있었으며, 출발용액의 조성과 증착온도의 조절에 의해 능면정상 또는 정방정상구조를 가지는 박막의 제조가 가능하였다. p형 실리콘 기판 위에 증착시킨 $Pb(Zr,\;Ti)O_3$박막으로 제조한 MOS소자에 대한 1MHz C-V곡선의 퇴적영역에서 구한 유전율은 187이었다. Sawyer-Tower회로를 이용한 P-E 이력특성 조사결과 박막이 강유전특성을 가짐을 확인하였으며, 잔류분극은 $5.5{\mu}C/cm^2$이고 항전력은 65kV/cm이였다. 박막의 비저항은$10^{11}{\Omega}cm$ 정도이며 35kV/cm에서 절연파괴가 일어났다

• 전기학회논문지
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• 제60권8호
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• pp.1560-1565
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• 2011

The environmental pollution caused by green-house gases such as $CO_2$ and $SF_6$ has been becoming the main issue of industrial society. Many developed countries are making efforts to minimize the amount of $CO_2$ emission come from the operation of high voltage electrical apparatuses. As a part of these efforts, 180 countries signed the Kyoto Protocol in 1997 to cut back on their green-house gas emissions. Nowadays, the study on the development of dry air insulated switchgear (DAIS) which is known as an eco-friendly electrical apparatus is in progress. A DAIS is advantageous for minimizing the effect of impurities and enhancing the dielectric characteristics over an air insulated switchgear (AIS) by applying constant pressure to an enclosed cubicle. Therefore, a study on the electrical insulation performance of dry air as a gaseous insulation medium is conducted in this paper to substitute a gas insulated switchgear (GIS) for DAIS. As results, it is verified that the AC dielectric characteristics of dry air are similar to those of air and the lightning impulse dielectric characteristics of dry air are superior to those of air at 1bar pressure condition. However, dry air is of inferior dielectric characteristics to $SF_6$ at 4bar pressure condition. Finally, it is suggested that the internal pressure of DAIS should be over 4bar pressure to develop a high voltage switchgear which has similar electrical performance to a conventional GIS. Also, the empirical formulae on calculating the maximum electric field intensity at sparkover of dry air are deduced by experiments according to pressures. It is expected that these results are helpful to design and develop a high voltage electrical apparatus.

• 한국안전학회지
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• 제33권2호
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• pp.21-27
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• 2018

The expansion and stable operation of electric power facilities are important factors with development of industrial facilities in modern society. In high-voltage equipment such as GIS, the insulation characteristics may be deterioated by environment-friendly gas adaption and miniaturization. There is also the possibility of accidents due to insulation breakdown due to the deterioration of power facilities. Therefore, it is necessary to extend the diagnosis system to continuously monitor the danger signals of these power equipment and to prevent accidents. Most of the internal defects in the GIS system are conductive particles, floating electrode defects, protrusion defects, and the like. In this case, a partial discharge phenomenon is accompanied. These partial discharge signals occur irregularly and various noise signals are included in the field, so it is difficult to evaluate the reliability in the development of the diagnostic system. In this paper, a study was made on equipment capable of generating a partial discharge simulated signal that can be adjusted in size and frequency to be applied to a diagnostic device by electromagnetic wave detection method. The PD simulated pulse generator consists of a user interface module, a high-voltage charging module, a pulse forming circuit, a voltage sensor and an embedded controller. In order to simulate the partial discharge phenomenon similar to the actual GIS, a discharge cell was designed and fabricated. The application of the prototype pulse generator to the commercialized PD diagnosis module confirmed that it can be used to evaluate the performance of the diagnostic device. It can be used for the development of GIS diagnosis system and performance verification for reliability evaluation.