• The KIPS Transactions:PartA
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• v.15A no.4
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• pp.211-216
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• 2008

In this paper we fabricated and measured the $0.26{\mu}m$ NMOSFET with wet gate oxide and nitride oxide gate to compare that the charateristics of hot carrier effect, charge to breakdown, transistor Id_Vg curve, charge trapping, and SILC(Stress Induced Leakage Current) using the HP4145 device tester. As a result we find that the characteristics of nitride oxide gate device better than wet gate oxide device, especially hot carrier lifetime(nitride oxide gate device satisfied 30 years, but the lifetime of wet gate oxide was only 0.1 year), variation of Vg, charge to breakdown, electric field simulation and charge trapping etc.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.173-175
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• 2002

In general, CT and Shunt have been traditionally used as a sensor for detecting the partial discharges in order to diagnose the present insulation state of the electric power apparatus. The former is very convenient for the practical application since it is not only non-contact method but its frequency bandwidth and resonance frequency could be designed for its specific application. However, it has been proved to have poor linearity and low sensitivity. For the latter, even though it is an ideal sensor, noise from the power source and the ground could flow into the system. Furthermore, the surge current could be easily come into the measuring systems giving rise to a severe breakdown. In this respect, a hybrid sensor has been designed and fabricated in order to overcome the shortcoming of these two types of sensors. For this purpose, the experimental comparison with commercialized products has been also carried out. In this concept of the hybrid sensor, two different impedances could provide the passage of the signals. In this way, the discrimination of the noise could be accomplished very effectively with high ratio of signal over noise(S/N) under the little influence from the external noises and the breakdown.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.280-283
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• 2004

This paper discribes the design concept, fabrication process and measuring result of 2.5kV Gate Commutated Thyristor devices. Integrated gate commutated thyristors(IGCTs) is the new power semiconductor device used for high power inverter, converter, static var compensator(SVC) etc. Most of the ordinary GTOs(gate turn-off thyristors) are designed as non-punch-through(NPT) concept; i.e. the electric field is reduced to zero within the N-base region. In this paper, we propose transparent anode structure for fast turn-off characteristics. And also, to reach high breakdown voltage, we used 2-stage bevel structure. Bevel angle is very important for high power devices, such as thyristor structure devices. For cathode topology, we designed 430 cathode fingers. Each finger has designed $200{\mu}m$ width and $2600{\mu}m$ length. The breakdown voltage between cathode and anode contact of this fabricated GCT device is 2,715V.

• Transactions on Electrical and Electronic Materials
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• v.14 no.4
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• pp.221-224
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• 2013

Effects of ambient temperature on the ac electrical treeing and breakdown behaviors in an epoxy/layered silicate (1 wt%) were carried out in needle-plate electrode geometry. A layered silicate was exfoliated in an epoxy base resin,, using our ac electric field apparatus. To measure the treeing initiation and propagation, and the breakdown rate, constant alternating current (ac) of 10 kV (60 Hz) was applied to the specimen in a needle-plate electrode arrangement, at $30^{\circ}C$, $90^{\circ}C$ or $130^{\circ}C$ of insulating oil bath. At $30^{\circ}C$, the treeing initiation time and the breakdown time in the epoxy/layered silicate (1 wt%) system were 1.4 times higher than those of the neat epoxy resin. At $90^{\circ}C$ (lower than Tg), electrical treeing was initiated in 55 min, and propagated until 1,390 min at the speed of $0.35{\times}10^{-3}mm/min$, which was 4.4 times higher than that at $30^{\circ}C$; however, there was almost no further treeing propagation after 1,390 min. At $130^{\circ}C$ (higher than Tg), electrical treeing was initiated in 44 min, and propagated until 2,000 min at the speed of $0.96{\times}10^{-3}mm/min$. Typical branch type electrical treeing was obtained from the neat epoxy and epoxy/layered silicate at $30^{\circ}C$, while bush type treeing was observed out from the needle tip at $90^{\circ}C$ and $130^{\circ}C$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.3
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• pp.24-32
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• 2011

[ $SF_6$ ]gas, which has an excellent dielectric strength and interruption performance, is used in various applications such as gas insulated switchgear (GIS) in substations. However, since $SF_6$ has a high global warming potential (GWP), it is necessary to find an eco-friendly alternative insulation gas. In order to examine the possibility of using alternative insulation gases for $SF_6$ in power distribution system equipment, the dielectric strength and physical phenomena of dry air in a quasi-uniform electric field are investigated experimentally in this paper. As a result, the breakdown voltages for positive polarity are higher than those for negative polarity under impulse voltage applications. The negative 50[%] flashover voltage, $V_{50}$ of dry air under conditions above 0.4[MPa] gas pressure, is higher than 150[kV], that is the basic impulse insulation level of distribution equipment. The $V_{50}$ increases linearly with increasing the gas pressure, regardless of the waveform and polarity of the applied impulse voltages. The voltage-time curves are dependent on the rise time of the impulse voltage and gas pressure. Furthermore, streamer discharge was observed through light emission images by an ICCD camera under impulse voltage applications.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.7
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• pp.109-114
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• 2013

Power MOSFET (metal-oxide semiconductor field-effect transistor) are widely used in power electronics applications, such as BLDC (Brushless Direct Current) motor and power module, etc. For the conventional power MOSFET device structure, there exists a tradeoff relationship between specific on-state resistance and breakdown voltage. In order to overcome the tradeoff relationship, a non-uniform super-junction (SJ) trench MOSFET (TMOSFET) structure for an optimal design is proposed in this paper. It is required that the specific on-resistance of non-uniform SJ TMOSFET is less than that of uniform SJ TMOSFET under the same breakdown voltage. The idea with a linearly graded doping profile is proposed to achieve a much better electric field distribution in the drift region. The structure modelling of a unit cell, the characteristic analyses for doping density, and potential distribution are simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the non-uniform SJ TMOSFET shows the better performance than the uniform SJ TMOSFET in the specific on-resistance at the class of 100V.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.2 no.3
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• pp.431-437
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• 1998

In this paper, we have investigated the electrical properties of ultra-thin nitrided oxide(NO) and re-oxidized nitrided oxide(ONO) films that are considered to be promising candidates for replacing conventional silicon dioxide film in ULSI level integration. Especially, we have studied a variation of I-V characteristics, gate voltage shift, and time-dependent dielectric breakdown(TDDB) of thin layer NO and ONO film depending on nitridation and reoxidation time, respectively, and measured a variation of leakage current and charge-to-breakdown(Q$\_bd$) of optimized NO and ONO film depending on ambient temperature, and then compared with the properties of conventional SIO$\_2$. From the results, we find that these NO and ONO thin films are strongly influenced by process time and the optimized ONO film shows superior dielectric characteristics, and (Q$\_bd$) performance over the NO film and SIO$\_2$, while maintaining a similar electric field dependence compared with NO layer.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.48 no.12
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• pp.1013-1020
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• 2020

Spark-induced breakdown spectroscopy (SIBS) utilizes an electric spark to induce a strong plasma for collecting atomic emissions. This study analyses the potential for usinga compact SIBS instead of conventional laser-induced breakdown spectroscopy (LIBS) in discriminating rocks and soils for planetary missions. Targeting bulky solids using SIBS has not been successful in the past, and therefore a series of optimizations of electrode positioning and electrode materials were performed in this work. The limit of detection (LOD) was enhanced up to four times compared to when LIBS was used, showing a change from 78 to 20 ppm from LIBS to SIBS. Because of the higher energy of plasma generated, the signal intensity by SIBS was higher than LIBS in three orders of magnitude with the same spectrometer setup. Changing the electrode material and locating the optimum position of the electrodes were considered for optimizing the current SIBS setup being tested for samples of planetary origin.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.8
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• pp.30-35
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• 2006

Voltage is generally and exactly measured in the electric and electronic field. So, we studied method for detecting electric equipment faulty state using only electric voltage. It is called the Partition-FFT. Tracking is simulated by method and tester proceed on IEC 60112. We analyze voltage waveforms by tracking tester with Partition-FFT. As the result tracking process is clearly distinguished by 6 steps. Tracking is one of the major reason of electric accidents. The Partition-FFT is using a digital oscilloscope and a computer software. If Partition-FFT analysis is applied to the electricity facilities, We can prevent from happenning electric accidents cause of tacking breakdown with low prices and easy measurment. Most of all, Partition-FFT is system that make a visual tacking process. So, everyone is able to detect to possibility of electric accidents.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.307-308
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• 2007

This work shows the experimental results obtained from ageing at a temperature of 100 C for 48, 70 and 312 h, although the application of AC electrical tension in samples and the measuring of current leakage are presented. The measurements in samples were carried out with samples prepared from the deformulated commercial materials and respectively reformulated into thin films. The obtained results showed the mechanisms of conduction of samples in low and high electric fields. It was also identified an electric tension transition showing that in low fields it prevails the Ohm's law conduction, and in high electric fields it prevails the conduction of space charge limited current (SCLC). These results can support the natural rubber formulation process having as their main objective the reducing of the mechanisms that occur under high conduction current in high electric fields, which leads the material to a dielectric breakdown. Raw Natural rubber in Brazil is extracted from rubber trees (Hevea brasiliensis) in farms in So Paulo State by using some new plantation technology in smaller spaces, with trees placed a few meters from each other. In the Amazon rain forest the rubber trees are found naturally and their spacing may be of hundreds of meters or even kilometers between them. It is necessary to research this raw material from different internationally standard clones to characterize dielectric and electric properties for industrial applications. Moreover, this natural material has a low commercial price when compared to the synthetic ones.