• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.187-189
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• 1997

Thermal and electrical breakdown phenomena in XLPE insulator of power cable were investigated. At high temperature the polymeric insulator was thermally deteriorated. Under the magnified high electric field, electrical tree was initiated at the sharp tip of needle electrode which was inserted to simulate the defects and impurities such as void, crack, metallic particles, dusts, and so on.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.6
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• pp.827-832
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• 2012

The crosslinked polyethylene (XLPE) is the most widely used insulating material for power cable. Due to its thermosetting characteristics, the XLPE can not be recycled, while the needs for the environmental friendly and recyclable insulator is rapidly increasing. In this paper, some important and basic electrical properties of non-crosslinked polyethylene such as conduction current characteristics, water the tree characteristics, AC breakdown test were experimentally investigated. It was shown that some of the tested samples had better performances from the application point of view for replacing current XLPE.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.96.1-96.1
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• 2017

This presentation introduces anodizing science of typical valve metals of Al, Mg and Ti, based on the ionic transport through the andic oxide films in various electrolyte compositions. Depending on the electrolyte composition, metal ions and anions can migrate through the andic oxide film without its dielectric breakdown when point defects are present within the anodic oxide films under high applied electric field. On the other hand, if anodic oxide films are broken by local joule heating due to ionic migration, metal ions and anions can migrate through the broken sites and meet together to form new anodic films, known as plasma electrolytic oxidation (PEO) treatment. In this presentation, basics of conventional anodizing and PEO methods are introduced in detail, based on the ionic migration and movement mechanism through anodic oxide films by point defects and by local dielectric breakdown of anodic oxide films.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.234-238
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• 1987

In this paper, the used specimen composition was added basic additives ($Bi_2O_3\;lmol%$, $Sb_2O_3\;lmol%$, CoO 0.5 mol%, MnO 0.5mol%) to ZnO powder, and $TiO_2$ (1,2,3,4 mol%) to the above basic composition. It appears that there are four regions of conduction current depended upon the strength of the applied electric field ; Ohimic region, Poole-Frenkel region, Schottky region and Tunneling region. Increasing of $TiO_2mol%$, the breakdown voltages of ZnO ceramic varistors are decreased. The decrease of breakdown voltages was explained with the decrease of potential barrier height. Moreover, V-I characteristics with temperature dependence are decreased with increasing of $TiO_2mol%$.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2299-2301
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• 1999

In this work, experimental investigation was carried out for the breakdown characteristics of $SF_6$, $N_2$ and their mixtures under the uniform and non-uniform electric field, by use of HVAC and standard impulse testing voltages, as a function of different gas pressures from 1 atm to 5 atm. The results show that the dielectric strength of the $SF_6$ mixed in $N_2$ was significantly increased at its portion of 10%, which might imply that the optimum mixture of $SF_6$ for the HV switch gear could be proposed to be 10%.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1085-1086
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• 2006

EMU, Electric Multiple Unit, is very complicated system that consists of thousand parts. If breakdown happens, work that clears cause in most cases work that clears cause in most cases is very complicated and difficult. Also it needs much times and experts of several parts. Maintenance is depending on know-how of the operator and breakdown that happen before happens often repeatedly because information management and public ownership are not achieved properly about analysis and action result. In this paper we present the case-based expert system for EMU which is able to share this know-how knowledge that data-based systemically with another operator.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.7
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• pp.1276-1281
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• 2010

To analyze the gas discharge phenomena in parallel-plane electrodes, the fully coupled finite element method (FEM) considering secondary electron emission effects in discharge column was adopted in this paper. Two coupled equations of the hydrodynamic diffusion-drift equations for three carriers and the Poisson's equation for electric scalar potential should be solved as a system equation. The proposed method including two secondary electron processes of the photoemission and background ionization has been successfully applied to evaluating the breakdown voltage in parallel-plane electrodes and is verified by comparing its numerical results with the experimental ones. From the obtained results, it is inferred that the proposed numerical scheme will be useful for predicting and understanding streamer transient phenomena.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.4
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• pp.222-228
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• 2015

Power MOSFETs (metal oxide semiconductor field effect transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device, it is essential to increase its conductance. However, a trade-off relationship between the breakdown voltage and conductance of the device have been the critical difficulty to improve. In this paper, theoretical analysis of electrical benefits on single floating island power MOSFET is proposed. By the method, the optimization point has set defining the doping limit under single floating island structure. The numerical multiple 2.22 was obtained which indicates the doping limit of the original device, improving its ON state voltage drop by 45%.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.148-151
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• 2011

We designed and fabricated aluminium gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) with stable reverse blocking characteristics established by employing a selective fluoride plasma treatment on the drainside gate edge region where the electric field is concentrated. Implanted fluoride ions caused a depolarization in the AlGaN layer and introduced an extra depletion region. The overall contour of the depletion region was expanded along the drift region. The expanded depletion region distributed the field more uniformly and reduced the field intensity peak. Through this field modulation, the leakage current was reduced to 9.3 nA and the breakdown voltage ($V_{BR}$) improved from 900 V to 1,400 V.

• Proceedings of the KSR Conference
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• 2005.11a
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• pp.712-717
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• 2005

In this thesis, it is investigated that the effect of the cross linked polyethylene(XLPE) insulator do to breakdown phenomenon by the insertion of the needle and bar electrode into XLPE which is used of electric power cable for the ultra-high voltage. The result of the partial discharge properties in the specimen showed that in case of the insertion of needle or bar electrode into XLPE, the effect of the inner discharge become large when the air void is bigger then the clearance of the electrode of the specimen. The closer the distance between the insulator and needle electrode, it takes less time to the insulation breakdown.