• 한국산학기술학회논문지
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• 제15권7호
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• pp.4489-4493
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• 2014

LED 조명 구동장치는 150W 이상에서 효율과 발열문제가 있고 W(와트)수가 다른 조명기기를 교체하는데 불편함이 있다. 본 논문에서는 멀티채널 LED 조명 구동장치를 드라이버 연동형 구조의 전원시스템과 멀티채널 구조형태의 드라이버 회로내장형으로 설계하였다. 본 개발품은 전원효율 93% 이상 및 역율 0.98 이상의 자동 제어 컨버터 구조로써 드라이버 연동형 구조의 고효율 LED 조명 구동장치와 자기보상방식의 자기최적화 구조의 드라이버다. 따라서, 본 논문은 THD 10% 이하와 기존 컨버터 대비 중량이 40% 이상 감소하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.414-414
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• 2009

나노스피어 리소그래피는 기존의 리소그래피 방법에 비해 나노 크기 패턴을 제작하는데 공정이 간단하며 재현성있게 대면적에 패터닝이 가능하다는 장점이 있다. 본 연구에서는 Vertical LED(V-LED)의 External quantum efficiency 향상을 위하여 나노스피어 리소그래 피를 이용하여 V-LED의 n-GaN 표면을 패터닝을 하였다. n-GaN 위에 Sputter를 이용하여 $SiO_2$를 증착 후 나노스피어를 스핀 코팅을 이용하여 단일막을 형성하였다. 그 후, 반응성 이온 식각 장치를 이용하여 나노스피어의 크기를 조절하고 $SiO_2$층을 식각하였다. 다음과 같은 공정 후 $SiO_2$층을 Mask층으로 하여 n-GaN 표면을 식각하였다. 실험 결과 나노스피어 리소그래피를 이용하여 V-LED의 External quantum efficiency 향상을 위한 n-GaN 표면의 패턴 제작이 가능함을 확인할 수 있었다.

• 마이크로전자및패키징학회지
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• 제18권4호
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• pp.91-95
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• 2011

GaN 기반의 LED에서 광 추출 효율을 정량적으로 분석하였다. Ray-Tracing기반의 시뮬레이션을 이용하여 사파이어 기판에 형성된 패턴의 형태, 크기, 깊이, 간격들을 분석하여 최적의 패턴 요소들을 도출하였다. 시뮬레이션의 결과로 최적의 패턴 형태는 반구 형태에서 높은 광 추출 효율을 보였다. 일반적인 패턴이 없는 사파이어 기판을 사용한 LED의 광 추출 효율보다 반구 형태의 패턴을 가진 사파이어 기판에서 약 40% 향상된 광 추출 효율을 보였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.171-171
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• 2012

In this study, we fabricated the high-brightness AlGaInP-based red light emitting diodes (LED)s using by direct printing technique and inductive coupled plasma (ICP) reactive ion etching (RIE). In general, surface roughening was fabricated by wet etching process to improve the light extraction efficiency of AlGaInP-based red LED. However, a structure of the surface roughening, which was fabricated by wet etching, was tiled cone-shape after wet etching process due to crystal structure of AlGaInP materials, which was used as top-layer of red LED. This tilted cone-shape of surface roughening can improve the light extraction of LED, but it caused a loss of the light extraction efficiency of LED. So, in this study, we fabricated perfectly cone shaped pattern using direct printing and dry etching process to maximize the light extraction efficiency of LED. Both submicron pattern and micron pattern was formed on the surface of red LED to compare the enhancement effect of light extraction efficiency of LEDs according to the diameter of sapphire patterns.After patterning process using direct printing and ICP-RIE proceeded on the red LED, light output was enhanced up to 10 % than that of red LED with wet etched structure. This enhancement of light extraction of red LED was maintained after packaging process. And as a result of analyze of current-voltage characteristic, there is no electrical degradation of LED.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.227-228
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• 2006

there are several methods to raise the LED efficiency. In this paper, we designs a simulation(method) to promote the LED efficiency by attaching another lens to a lead type LED lamp. this concentrates a dispersed light.

• 전력전자학회논문지
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• 제18권4호
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• pp.397-402
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• 2013

This paper proposes a new passive type LED driver which satisfies the standard of power factor (PF) and total harmonic distortion (THD). The proposed passive LED driver also has high-efficiency and long-life time characteristics compared to active LED driver which is composed of op-amp, switches and so on. By using just passive components such as inductor, capacitor, and diode, it has resolved extremely short-life time and low-efficiency problems of previous LED drivers. It has achieved PF of 0.99, THD of 16.4 %, and the total efficiency of 95 %. The proposed passive LED driver is fully analyzed and verified by simulations and experiments, which results are in good agreement each other.

• 한국광학회지
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• 제16권3호
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• pp.275-286
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• 2005

InGaN LED에서 칩 구조 및 칩마운트 구조에 따른 광추출효율의 변화를 Monte Calo 기법을 이용하여 해석하였다. Simulation을 통해 얻은 중요한 결론의 하나는, InGaAlP 또는 InGaN/SiC LED의 경우에서는 달리, InGaN/sapphire LED의 경우 칩의 측 벽면 기울임 기법의 광추출효율 개선효과가 상대적으로 미미하다는 점이다. InGaN/SiC LED의 경우와는 달리, 기판으로 사용되는 sapphire의 굴절률이 상대적으로 작아서 생성된 광자들이 기판으로 넘어가는데 전반사장벽을 만나게 되어, 많은 광자들이 기판으로 넘어가지 못하고 두께가 매우 얇은 반도체 결정층에 갇히는 현상 때문이다. 동일한 현상은 epi-down 구조의 칩 마운트에서 광추출효율이 크게 개선되지 못하는 원인으로도 작용하게 된다. 광추출효율 관점에서의 epi-down 구조의 InGaN/sapphire LED가 갖고 있는 잠재력을 살리기 위한 방법의 하나는 기판-에피택시 계면을 texturing 하는 것이라고 할 수 있는데, 이 경우 생성된 광자들이 다량기판으로 넘어갈 수 있게 되어 광추출효율이 현저하게 개선된다.

• 반도체디스플레이기술학회지
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• 제18권1호
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• pp.10-14
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• 2019

In this study, we synthesized two $Y_3Al_5O_{12}:Ce^{3+}$ phosphors ($7{\mu}m$-sized and $2{\mu}m$-sized YAG) with different sizes by controlling particles sizes of starting materials of the phosphors for white LED. In the smaller one ($2{\mu}m$-sized YAG), its photoluminescence intensity in the reflective mode was 63 % that of the bigger one ($7{\mu}m$-sized YAG); the quantum efficiencies were 93 % and 70 % for the smaller and the bigger ones. Two kinds of white LED packages with the same color coordinates were fabricated with a blue package (chip size $53{\times}30$) and two phosphors. The luminous flux of the white LED package with the smaller YAG phosphor was 92 % of that with the bigger one, indicating that the quantum efficiency of phosphor dispersed inside LED package was higher than that of the pure powder. It was consistently confirmed by the optical simulation (LightTools 6.3). It is notable according to the optical simulation that the white LED with the smaller phosphor showed 24 % higher luminous efficiency. If the smaller one had the same quantum efficiency as the bigger one (~93 %). Therefore, it can be suggested that the higher luminous efficiency of white LED can be possible by reducing the particle size of the phosphor along with maintaining its similar quantum efficiency.

• Current Optics and Photonics
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• 제1권6호
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• pp.626-630
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• 2017

GaN-based green light-emitting diode (LED) structures suffer from low internal quantum efficiency (IQE), known as the "green gap" problem. The IQE of LED structures is expected to be improved to some extent by exploiting the Purcell effect. In this study, the Purcell effect on the IQE of green LED structures is investigated numerically using a finite-difference time-domain simulation. The Purcell factor of flip-chip LED structures is found to be more than three times as high as that of epi-up LED structures, which is attributed to the high-reflectance mirror near the active region in the flip-chip LED structures. When the unmodified IQE is 20%, the relative enhancement of IQE can be greater than 50%, without utilizing the surface-plasmon coupling effect. Based on the simulation results, the "green gap" problem of GaN-based green LEDs is expected to be mitigated significantly by optimizing flip-chip LED structures to maximize the Purcell effect.

• Journal of Electrical Engineering and Technology
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• 제12권4호
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• pp.1593-1599
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• 2017

This paper presents a multi-channel light-emitting diode (LED) driver IC with a current-mode current regulator. The proposed current regulator replaces resistors for current sensing with a sequentially controlled single current sensor and a single regulation loop for sensing and regulating all LED channel currents. This minimizes the current mismatch among the LED channels and increases voltage headroom or, equivalently, power efficiency. The proposed LED driver IC was fabricated in a $0.35-{\mu}m$ BCD 60-V high voltage process, and the chip area is $1.06mm^2$. The measured maximum power efficiency is 93.4 % from a 12-V input, and the inter-channel current error is smaller than as low as ${\pm}1.3%$ in overall operating region.