• Title/Summary/Keyword: Effective ionization

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Memory Characteristics of 1T-DRAM Cell by Channel Structure (채널 구조에 따른 1T-DRAM Cell의 메모리 특성)

  • Jang, Ki-Hyun;Jung, Seung-Min;Park, Jin-Kwon;Cho, Won-Ju
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.2
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    • pp.96-99
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    • 2012
  • We fabricated fully depleted (FD) SOI-based 1T-DRAM cells with planar channel or recessed channel and the electrical characteristics were investigated. In particular, the dependence of memory operating mode on the channel structure of 1T-DRAM cells was evaluated. As a result, the gate induced drain leakage current (GIDL) mode showed a better memory property for planar type 1T-DRAM. On the other hand, the impact ionization (II) mode is more effective for recessed type.

A study of the Insulation Characteristic in $SF_6-N_2$ Mixture Gases ($SF_6-N_2$ 혼합기체의 절연특성에 관한 연구)

  • Ha, Sung-Chul;Song, Byoung-Doo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.613-616
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    • 2001
  • This SF6 gas is widely used in industrial of insulation field. In this paper, N2 is mixed to improve pure SF6 gas characteristics. Electron transport coefficients in SF6-N2 mixture gases are simulated in range of E/N values from 70 to 400 [Td] at 300K and 1 Torr by using Boltzmann equation method. The results of this method, which are like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient, and critical EIN, can be important data to present characteristic of gas for insulation. Specially critical E/N is a data to evaluate insulation strength of a gas and is presented in this paper for various mixture ratios of SF6-N2 mixture gases.?⨀␍?܀㘱〮㜳㬓M敤楣楮攠慮搠桥污瑨

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Analytical Model of Breakdown Voltages for 6H-SiC $p^{+}n$ Junction (6H-SiC $p^{+}n$ 접합의 항복 전압을 위한 해석적 모형)

  • Jeong, Yong-Seong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.6
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    • pp.398-403
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    • 2001
  • In this paper, effective ionization coefficient for 6H-SiC is determined. Analytical formulas for the parallel plane breakdown voltage of the 6H-SiC p+n junction are derived by employing the ionization coefficients. The analytical breakdown voltages show good agreement with the numerical results of Dmitriev's[3]and the experimental results of Cree Research[9]over the doping range from 10$^{15}$ cm$^{-3}$ to 10$^{18}$ cm$^{-3}$.

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Analysis of nonionic surfactants and silicone polymers in cosmetic products using Matrix - assisted Laser Desorption/Ionization Time-of- flight Mass Spectrometry

  • Lee, Myoung-Hee;Lee, Gae-Ho;Yoo, Jong-Shin
    • Proceedings of the SCSK Conference
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    • 2003.09b
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    • pp.480-507
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    • 2003
  • A rapid and efficient method for analyzing the nonionic surfactants and silicone polymers, which control the shape and characteristics of cosmetic products and give influence on product quality, has been developed using Matrix-Assisted Laser Desorption Ionization Time of Flight Mass Spectrometry (MALDI- TOF IMS). The MALDI-TOF/MS could easily and effectively determine the molecular weight distribution and monomer units of nonionic surfactants. As a result, creating a library of mass spectrum data of surfactants used in cosmetic products using MALDI-TOF/MS and analyzing surfactants extracted from the products may become a useful method for detailed structural characterization of the surfactants. Furthermore, the MALDI-TOF/MS analysis was effective in obtaining the spectrum of silicone polymers from which the molecular weight distribution could be determined. The repetition units and structural data could also be obtained through molecular mass peaks. Additionally, the monomer ratio and terminal groups as properties of silicone copolymers could be determined

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Analytical Breakdown Voltages of $p^{+}n$ Junction in Power Semiconductor Devices (전력 반도체 $p^{+}n$ 접합의 해석적 항복전압)

  • Chung, Yong Sung
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.10 s.340
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    • pp.9-18
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    • 2005
  • Analytical expressions for breakdown voltages of abrupt $p^{+}n$ junction of Si, GaAs, InP and In$In_{0.53}Ga_{0.47}AS$ were induced. Getting analytical breakdown voltages, effective ionization coefficients were extracted using lucky drift parameters of Marsland for each materials. The results of analytical breakdown voltages followed by ionization integral agreed well with experimental result within 10$\%$ in error for the doping concentration in the range of $10^{14}cm\;^{-3}\~5\times10\;^{17}cm\;^{-3}$.

Electron Energy Distribution Function in $CF_4$ Gas used by MCS-BE Algorithm ($CF_4$ 기체의 MCS-BEq 알고리즘에 의한 전자에너지 분포함수)

  • Park, Jae-Sae;Kim, Sang-Nam;Kim, Il-Nam
    • Proceedings of the KIEE Conference
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    • 2002.06a
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    • pp.102-105
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    • 2002
  • In this paper, the electron transport characteristics in $CF_4$ has been analysed over the E/N range 1${\sim}$300 [Td] by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, longitudinal diffusion coefficient, the ratio of the diffusion coefficient to the mobility, electron ionization and attachment coefficients, effective ionization coefficient, mean energy, collision frequency and the electron energy distribution function. The swarm parameter from the swarm study are expected to serve as a critical test of current theories of low energy electron scattering by atoms and molecules, in particular, as well as crucial information for quantitative simulations of weakly ionized plasmas.

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A study of the Insulation Characteristic in $SF_{6}$-$N_2$ Mixture Gases ($SF_{6}$-$N_2$ 혼합기체의 절연특성에 관한 연구)

  • 하성철;송병두
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.613-616
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    • 2001
  • This $SF_{6}$ gas is widely used in industrial of insulation field. In this paper, $N_2$ is mixed to improve pure $SF_{6}$ gas characteristics. Electron transport coefficients in $SF_{6}$-$N_2$ mixture gases are simulated in range of E/N values from 70 to 400 [Td] at 300K and 1 Torr by using Boltzmann equation method. The results of this method, which are like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient, and critical E/N, can be important data to present characteristic of gas for insulation. Specially critical E/N is a data to evaluate insulation strength of a gas and is presented in this paper for various mixture ratios of $SF_{6}$-$N_2$ mixture gases.

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Theoretical Analysis for Determination of Effective Length of Vertically-Driven Ground Rod (수직매설 접지전극의 유효길이 산정에 대한 이론적 해석)

  • Lee, Bok-Hee;Kim, Jung-Cheol;Kim, Jong-Ho;Yoo, Jae-Duk;Kim, Dong-Kyu;Lee, Su-Bong
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2009.05a
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    • pp.63-66
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    • 2009
  • Lighting currents are one of major influences on the dynamic performance of ground electrodes. High lighting current intensity changes in the dynamic grounding performance due to ionization of the soil and very fast fronted pulses. The previous analysis has often been based on quasi-static approximation that is not applicable to very fast fronted pulses. To extend the analysis to fast fronted pulses in this paper, the full-wave analysis method based in the rigorous electromagnetic-field theory approach is used and the effects of the ionization of the soil me disregarded. Based on the simulation results, the empirical formulas applicable for slow and very fast fronted lightning current pulses me reviewed; therefore the validity of the theoretical approach is verified through comparison between the calculated and measured results.

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A Study of the Insulation Characteristic in $CF_4$ Gas (시뮬레이션에 의한 $CF_4$ 기체의 전자수송특성)

  • Kim, Sang-Nam;Hwang, Cheong-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.468-469
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    • 2007
  • In this paper, the electron transport characteristics in $CF_4$ has been analysed over the E/N range 1~300[Td] by a two-tenn approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, longitudinal diffusion coefficient, the ratio of the diffusion coefficient to the mobility, electron ionization and attachment coefficients, effective ionization coefficient, mean energy, collision frequency and the electron energy distribution function. The swarm parameter from the swarm study are expected to serve as a critical test of current theories of low energy electron scattering by atoms and molecules, in particular, as well as crucial information for quantitative simulations of weakly ionized plasmas.

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Comparison of Radiation Dose in the Measurement of MDCT Radiation Dose according to Correction of Temperatures and Pressure, and Calibration of Ionization Chamber (MDCT 선량측정에서 온도와 압력에 따른 보정과 Ionization Chamber의 Calibration 전후 선량의 비교평가)

  • Lee, Chang-Lae;Kim, Hee-Joung;Jeon, Seong-Su;Cho, Hyo-Min;Nam, So-Ra;Jung, Ji-Young;Lee, Young-Jin;Lee, Seung-Jae;Dong, Kyung-Rae
    • Progress in Medical Physics
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    • v.19 no.1
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    • pp.49-55
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    • 2008
  • This study aims to conduct the comparative analysis of the radiation dose according to before and after the calibration of the ionization chamber used for measuring radiation dose in the MDCT, as well as of $CTDI_w$ according to temperature and pressure correction factors in the CT room. A comparative analysis was conducted based on the measured MDCT (GE light speed plus 4 slice, USA) data using head and body CT dosimetric phantom, and Model 2026C electrometer (RADICAL 2026C, USA) calibrated on March 21, 2007. As a result, the $CTDI_w$ value which reflected calibration factors, as well as correction factors of temperature and pressure, was found to be the range of $0.479{\sim}3.162mGy$ in effective radiation dose than the uncorrected values. Also, under the routine abdomen routine CT image acquisition conditions used in reference hospitals, patient effective dose was measured to indicate the difference of the maximum of 0.7 mSv between before and after the application of such factors. These results imply that the calibration of the ion chamber, and the correction of temperature and pressure of the CT room are crucial in measuring and calculating patient effective dose. Thus, to measure patient radiation dose accurately, the detailed information should be made available regarding not only the temperature and pressure of the CT room, but also the humidity and recombination factor, characteristics of X-ray beam quality, exposure conditions, scan region, and so forth.

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