THE FORMATION MECHANISM OF GROWN-IN DEFECTS IN CZ SILICON CRYSTALS BASED ON THERMAL GRADIENTS MEASURED BY THERMOCOUPLES NEAR GROWTH INTERFACES
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- 한국결정성장학회:학술대회논문집
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- 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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- pp.187-207
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- 1999