• Journal of Mechanical Science and Technology
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• 제17권8호
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• pp.1120-1132
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• 2003

A problem of a circular elastic inhomogeneity interacting with a crack under uniform loadings (mechanical tension and heat flux at infinity) is solved. The singular. integral equations for edge and temperature dislocation distribution functions are constructed and solved numeric-ally, to obtain the stress intensity factors. The effects of the material property ratio on the stress intensity factor (SIF) are investigated. The computed SIFs are used to predict the kink angle of the crack when the crack grows.

• 한국결정성장학회지
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• 제30권3호
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• pp.96-102
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• 2020

본 논문에서는 6H-SiC (0001) 기판 위에 AlN 에피층을 혼합 소스 수소화물 기상 에피택시 방법에 의해 성장하였다. 시간당 5 nm의 성장률로 0.5 ㎛ 두께의 AlN 에피층을 얻었다. FE-SEM과 EDS 결과를 통해 6H-SiC (0001) 기판 위에 성장된 AlN 에피층 표면을 조사하였다. HR-XRD와 계산식을 통해 전위 밀도를 예측하였다. 1.4 × 10⁹ cm^-2의 나사 전위 밀도와 3.8 × 10⁹ cm^-2의 칼날 전위 밀도를 가지는 우수한 결정질의 AlN 에피층을 확인하였다. 혼합소스 HVP E 방법에 의해 성장된 6H-SiC 기판 위의 AlN 에피층은 전력소자 등에 응용이 가능할 것으로 판단된다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.44-44
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• 2003

Scandium을 소량 첨가한 Al합금은 용체화 처리 후 시효에 의해 강화되며, 합금의 주 강화상은 Ll2 type의 규칙구조를 갖는 A1$_3$Sc상으로 열처리시 아주 미세한 정합의 구형입자로 석출한다. Scandium은 Al합금에서 첨가원소의 at%에 따른 경량화 효과가 Gold 다음으로 크다. 현재까지의 Al-Sc계 합금에 대한 연구는 시효경화에 따른 기계적 특성 변화에 대해서만 이루어져 왔으나 본 연구에서는 투과전자현미경을 이용하여 열처리에 따른 미세조직의 변화, 급냉 상태에서 생성된 A13Sc입자의 형성 및 계면구조, 시효에 따른 석출거동을 규명하였다. 실험에 사용된 alloy는 미국의 Ashurst 사에서 제조된 Al-2wt%Sc모합금과 순도 99.9%의 Al을 혼합하여 Arc melting법으로 제조하였다. Primary A13Sc상은 Ll2 type으로 응고시에 용융상태에서 먼저 핵생성되어 Al의 핵생성 site로 작용한다. 635$^{\circ}C$에서 용체화 처리한 시편에서는 수백 nm 크기를 갖는 $Al_3$Sc상이 계면과 matrix내에 구형으로 존재함을 확인하였다. 수백 nm 크기의 $Al_3$Sc상의 내부에는 역위상 경계(Antiphase boundary)이 존재로 인한 특징적인 contrast가 관찰되었으며, 이 $Al_3$Sc상은 응고시 생성된 작은 $Al_3$Sc상들이 모여져 생성된 것으로 추측된다. 수백 nm 크기 의 $Al_3$Sc사와 Al matrix 사이의 계면에는 격자상수 차이에 의한 많은 edge dislocation들이 관찰된다.

• 대한기계학회논문집A
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• 제24권6호
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• pp.1565-1574
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• 2000

Surface edge crack subjected to contact stresses is analysed. A punch with corner radii is considered to press the semi-infinite plane. Partial slip problem is solved when a shear force is applied to the punch. Dislocation density function method is used to solve the present mixed mode crack problem. The crack length of positive K1 is examined, which is affected by the ratio of the flat portion to the total width of the punch. Surface traction during one cycle of the shear force is evaluated to simulate the fretting condition. The compliance change of the contact surface is also investigated during the shear cycle. It is found that the crack grows during only a part of the cycle, which may be termed as effective period of crack growing. A design method for restraining the fretting failure is discussed, from which recommendable geometry of the punch is suggested.

• 한국결정성장학회지
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• 제9권4호
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• pp.402-416
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• 1999

The thermal distributions near the growth interface of 150nm CZ crystals were measured by three thermocouples installed at the center, middle (half radius) and edge (10nm from surface) of the crystals. The results show that larger growth rates produced smaller thermal gradients. This contradicts the widely used heat flux balance equation. Using this fact, it is confirmed in CZ crystals that the type of point defects created is determined by the value of the thermal gradient(G) near the interface during growth, as already reported for FZ crystals. Although depending on the growth systems the effective length of the thermal gradient for defect generation are varied, we defined the effective length as 10n,\m from th interface in this experiment. If the G is roughly smaller than 20C/cm, vacancy rich CZ crystals are produced. If G is larger than 25C/cm, the species of point defects changes dramatically from vacancies to interstitials. The experimental results after detaching FZ and CZ crystals from the melt show that growth interfaces are filled with vacancies. We propose that large G produces shrunk lattice spacing and in order to relax such lattice excess interstitials are necessary. Such interstitials recombine with vacancies which were generated at the growth interface, nest occupy interstitial sites and residuals aggregate themselves to make stacking faults and dislocation loops during cooling. The shape of the growth interface is also determined by te distributions of G across the interface. That is, the small G and the large G in the center induce concave and convex interfaces to the melts, respectively.

• Nuclear Engineering and Technology
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• 제43권5호
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• pp.421-428
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• 2011

The out-of-pile mechanical performance and microstructure of recrystallized Zr-1.5 Nb-S alloy was investigated. The strength of the recrystallized Zr-1.5Nb-O-S alloys was observed to increase with the addition of sulfur over a wide temperature range, from room temperature up to $300^{\circ}C$. A yield drop and stress serrations due to dynamic strain were observed at room temperature and $300^{\circ}C$. Wavy and curved dislocations and loosely knit tangles were observed after strained to 0.07 at room temperature, suggesting that cross slip is easier. At $300^{\circ}C$, however, dislocations were observed to be straight and aligned along the slip plane, suggesting that cross slip is rather difficult. At $300^{\circ}C$, oxygen atoms are likely to exert a drag force on moving dislocations, intensifying the dynamic strain aging effect. Oxygen atoms segregated at partial dislocations of a screw dislocation with the edge component may hinder the cross slip, resulting in the rather straight dislocations distributed on the major slip planes. Recrystallized Zr-Nb-S alloys exhibited ductile fracture surfaces, supporting the beneficial effect of sulfur in zirconium alloys. Oxidation resistance in air was also found to be improved with the addition of sulfur in Zr-1.5 Nb-O alloys.

• KIEE International Transactions on Electrophysics and Applications
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• 제11C권2호
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• pp.32-36
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• 2001

We investigate the surface order, defects and morphology of hexagonal columnar mesophases, Having a crown ether at one end which forms the center of the column and three fluorinated tails at the other, The orientation of the columns was successfully controlled by surface anchoring: Columns were aligned perpendicularly to an evaporated carbon surface, and the planar alignment do asymmetric compounds was induced by a water surface. TEM images show that there is a high degree of perfection in the packing do the cylinders. The hexagonal columnar mesophase (F(sub)h) was confirmed by direct images and the corresponding electron diffractions, where ordered cylindrical moieties are packed on a hexagonal lattice. The column of 12F8-ABG-15C5 was much straighter, compared with that of 12F8-AG-B15C5, resulting from the degrees of regular stacking. Elementary edge dislocation, grain boundary and +1/2 disclination have been observed, although the defects are generally rare.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.187-207
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• 1999

The thermal distributions near the growth interface of 150mm CZ crystals were measured by three thermocouples installed at the center, middle (half radius) and edge (10m from surface) of the crystals. The results show that larger growth rates produced smaller thermal gradients. This contradicts the widely used heat flux balance equation. Using this fact, it si confirmed in CZ crystals that the type of point defects created is determined by the value of the thermal gradient (G) near the interface during growth, as already reported for FZ crystals. Although depending on the growth systems the effective lengths of the thermal gradient for defect generation are varied, were defined the effective length as 10mm from the interface in this experiment. If the G is roughly smaller than 20C/cm, vacancy rich CZ crystals are produced. If G is larger than 25C/cm, the species of point defects changes dramatically from vacancies to interstitial. The experimental results which FZ and CZ crystals are detached from the melt show that growth interfaces are filled with vacancy. We propose that large G produces shrunk lattice spacing and in order to relax such lattice excess interstitial are necessary. Such interstitial recombine with vacancies which were generated at the growth interface, next occupy interstitial sites and residuals aggregate themselves to make stacking faults and dislocation loops during cooling. The shape of the growth interface is also determined by the distributions of G across the interface. That is, the small G and the large G in the center induce concave and convex interfaces to the melt, respectively.

• 한국재료학회지
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• 제29권10호
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• pp.579-585
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• 2019

In this study, we investigate the effect of Al/N source ratios and growth rates on the growth and structural properties of AlN films on c-plane sapphires by plasma-assisted molecular beam epitaxy. Both growth rates and Al/N ratios affect crystal qualities of AlN films. The full width at half maximum (FWHM) values of ($10{\bar{1}}5$) X-ray rocking curves (XRCs) change from 0.22 to $0.31^{\circ}$ with changing of the Al/N ratios, but the curves of (0002) XRCs change from 0.04 to $0.45^{\circ}$ with changing of the Al/N ratios. This means that structural deformation due to dislocations is slightly affected by the Al/N ratio in the ($10{\bar{1}}5$) XRCs but affected strongly for the (0002) XRCs. From the viewpoint of growth rate, the AlN films with high growth rate (HGR) show better crystal quality than the low growth rate (LGR) films overall, as shown by the FWHM values of the (0002) and ($10{\bar{1}}5$) XRCs. Based on cross-sectional transmission electron microscope observation, the HGR sample with an Al/N ratio of 3.1 shows more edge dislocations than there are screw and mixed dislocations in the LGR sample with Al/N ratio of 3.5.

• 지구물리와물리탐사
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• 제15권2호
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• pp.92-101
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• 2012

평탄한 자유표면을 갖는 소규모 반구형 분지에서 임의의 전단변형 점진원에 대한 3차원 유한차분 모의를 수행하였다. 자유표면 경계조건을 다루기 위한 새로운 방법을 고안하였다. 분지에서 지반운동 응답에 대한 주요한 특징들을 파악하기 위하여 분지특성 변수를 조사하였다. 분지에서 지반운동의 주파수 함량을 분석하기 위하여, 각 주파수에 대한 진폭을 분지 주변 4개의 위치에서 계산하고 서로 비교하였다. 또한 어떤 종류의 파가 이들 각 지점에서의 지반운동 응답에 우세한 역할을 하는지 보기 위하여 입자운동을 분석하였다. 계산 결과, 지진파 에너지가 진원으로부터 먼 쪽의 분지 경계부에서 집중되는 것을 알 수 있었다. 이러한 집중 효과는 주로 직접 S-파와 분지 경계에서 생성된 표면파의 보강간섭으로 인한 것이다. 또한, 분지의 가장 깊은 곳 상부에서의 지반운동 증폭은 얕은 깊이의 분지 경계 부에 비하여 상대적으로 작게 나타났다. 이러한 결과로부터, 상대적으로 단순한 기반암 경계를 갖는 소규모 분지에서의 지반운동 증폭은 분지의 깊이 보다는 진원의 방위 또는 분지 내부로 입사하는 파의 진행방향에 더 많은 관계가 있다는 것을 추정할 수 있다.